Small
·
2022
·Vol. 18
·期 20
·2107650
·
IF 15.153
Yin Xia,Lingyi Zong,Yu Pan,Xinyu Chen,Lihui Zhou,Yiwen Song,Ling Tong,Xiaojiao Guo,Jingyi Ma,Saifei Gou,Zihan Xu,Sheng Dai,David Wei Zhang,Peng Zhou,Yu Ye,Wenzhong Bao
Two-dimentional semiconductors have shown potential applications in multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC-FET and C-FET based on large-scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer-scale 2D semiconductors, large-scale MBC-FETs and C-FETs using n-type MoS 2 and p-type MoTe 2 are successfully fabricated. The drive current of an MBC-FET with two layers of MoS 2 channel (20 µm/10 µm) is up to 60 µA under 1 V bias. Compared with the single-gate MoS 2 FET, the carrier mobility of MBC-FET is 2.3 times higher and the sub-threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS 2 channels. Then, C-FET arrays are fabricated by 3D integrating n-type MoS 2 FET and p-type MoTe 2 FET, which exhibit a voltage gain of 7 V/V when V DD = 4 V. In addition, this C-FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC-FET and C-FET based on large-scale 2D semiconductors will promote the application of 2D semiconductors in next-generation circuits.
研究领域:
电子器件
·
材料科学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 48
·2305379
·
IF 19
Jiaona Zhang,Wanting Wang,Jiahao Zhu,Jialiang Wang,Changbin Zhao,Tianyu Zhu,Qinqi Ren,Qi Liu,Rui Qiu,Min Zhang,Xinwei Wang,Hong Meng,Kuan-Chang Chang,Shengdong Zhang,Mansun Chan
Flexible electronics based on complementary metal-oxide-semiconductor (CMOS) technology have enabled a smart soft world. However, the trade-off among flexibility, density, and electrical performance has been a long-lasting unresolved issue. Here, a monolithic three-dimensional (M3D) CMOS design is proposed to address this problem and realize ultra-flexible electronics with high electronic-performance and integration. This design utilizes vertically stacked p-type carbon nanotube transistors and n-type indium gallium zinc oxide ones, which share common gates and drains, saving the inter tier vias required in the traditional M3D structure to reduce routing and improve flexibility. With this design, CMOS logic gates, multi-stage circuits, ring oscillators (ROs) and memory modules, are demonstrated. This design enables circuits to save up to 45% of area compared with their planar counterparts. Particularly, inverters exhibit a record-high gain of 191, and 55-stage ROs can operate well even after bending at a 500-µm radius for 50 cycles, exhibiting the highest flexibility among the reported ones. The ultra-flexible and high-integration RO enables a wearable light recorder to collect harmful blue light shining into human eyes by simply attaching the circuits on a contact lens. This integration method provides possibilities for developing complex-function wearable electronics.
研究领域:
电子工程
·
材料科学
·
集成电路设计
✓ 已验证
DOI
高影响因子
IEEE SENSORS JOURNAL
·
2025
·
IF 4.5
Jingqiu Chen,Qing Huang,Jing Huang,Tucan Chen,Lanpeng Guo,Yunong Zhao,Dandan Li,Wenjian Zhang,Huayao Li,Yang Zhang,Liang Hu,Huan Liu
The escalating demand for high-throughput and miniaturized biosensors has spurred significant advancements in biosensor chips. However, challenges remain in achieving high sensitivity and specificity in miniaturized devices. Herein, we construct a sensitive exosome biosensor based on quantum dots (QDs)-modified field effect transistor. PbS QDs were drop-coated onto the gate of a high electron mobility transistor (HEMT), followed by surface modification with CD63 antibodies (anti-CD63) through a ligand exchange strategy, and subsequent bovine serum albumin (BSA) blocking treatment. Exosomes with CD63 proteins enriched in the surface were isolated from MCF-7 breast cancer cell lines to serve as target analytes. The specific binding events between CD63 antigen and antibody capture exosomes onto the gate of HEMT, affecting the output current (ID). The synergy of the capacitance coupling effect of the modification layer and the intrinsic signal amplification capability of HEMT assists in significantly modulating the two-dimensional electron gas (2DEG), resulting in amplified ID. With constant gate voltage applied, the ID of the biosensor sensitively increases with exosome concentration within a wide range of 105-109 particles/mL at VD = 3.5 V, and the LOD is estimated to be 9 × 104 particles/mL. This exosome biosensor demonstrates its potential for clinical applicability and paves the way for the development of miniaturized exosome biosensor chips.
研究领域:
生物传感器
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纳米技术
·
癌症诊断
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生物电子学
·
微流控技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 23
·2213788
·
IF 19
Yanling Xiao,Wei Deng,Jiajing Hong,Xiaobin Ren,Xiujuan Zhang,Jialin Shi,Fangming Sheng,Xiaohong Zhang,Jiansheng Jie
Application-oriented growth of patterned organic semiconductor (OSC) thin films with a single domain is a nonnegotiable requirement for the manufacturing of high-performance organic electronic devices. However, the prevalent selective-wetting patterning method remains a challenge in controlling the density of nucleation events in microscale spaces, resulting in thin films with high grain boundary density and no preferential orientation spherulites. Herein, a simple double-blade-coating printing technique using a combination of wetting-patterned substrates to produce an array of highly crystalline OSC thin films is developed. Specifically, the approach confines the OSC crystallization on a molecular-flat water surface in specific areas, enabling a significant reduction in the number of nuclei. Consequently, patterned 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C 8 -BTBT) thin films comprising single-crystal domains are achieved with an exceptionally high yield of 62.5%. The organic field-effect transistor array developed from such patterns of C 8 -BTBT single-crystalline films exhibits an excellent average mobility of 11.5 cm 2 V −1 s −1 which is 12.5-fold higher compared to that of the reference sample fabricated via conventional single-blade coating. It is believed that this approach can be widely applied to other soluble organic materials, thereby opening up opportunities for fabricating multicomponent integrated electronics.
研究领域:
材料科学
·
纳米技术
·
有机电子学
·
半导体器件
✓ 已验证
DOI
高影响因子
Physica Status Solidi-Rapid Research Letters
·
2020
·Vol. 14
·期 4
·1900723
·
IF 2.291
Yadan Deng,Jingzan Jiang,Jun Sun,Yufeng Hu,Qiuhong Cui,Zhenbo Deng,Zhidong Lou,Yanbing Hou,Feng Teng
Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin-film transistors (TFTs). Unlike the popular method of forming nanowires after spin-coating films, here a water-bath method to fabricate the micrometer-long nanowires in the poly(3-hexylthiophene) (P3HT) solution is introduced, which is suitable for large-area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature-dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced.
研究领域:
材料科学
·
凝聚态物理
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有机电子学
·
薄膜晶体管
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半导体器件物理
✓ 已验证
DOI
高影响因子
Advanced Materials Technologies
·
2022
·Vol. 8
·期 1
·2200679
·
IF 8.856
Tong Chen,Chunyun Wang,Guoshen Yang,Qiang Lou,Qingping Lin,Shengdong Zhang,Hang Zhou
Monolithic integration of perovskite materials and their optoelectronic devices with well-developed thin-film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high-sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 µm are fabricated by spin-on-patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high-performance phototransistors with responsivity and detectivity reaching 835.7 A W −1 and 5.4 × 10 12 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non-patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high-resolution image sensors.
研究领域:
材料科学
·
电子工程
·
光电子学
✓ 已验证
DOI
高影响因子
Results in Physics
·
2020
·
IF 4.019
Yuan Zhao,Xiaoliang Liu,Guangdi Feng,Lu Lyu,Lin Li,Shitan Wang,Jie Jiang,Youzhen Li,Dongmei Niu,Haipeng Xie,Yongli Gao
The modification of C 60 nano-interlayers on the organic field-effect transistors (OFETs) based on 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT)/SiO 2 was addressed at both the electronic structure and device level. It is observed that a band bending occurs in C8-BTBT layer with the insertion of C 60 , which induces a strong hole accumulation at the interface region, facilitating the formation of high concentration conducting channel when the interface is incorporated into OFETs. The strong acceptor C 60 may cause charge transfer from the trap states in C8-BTBT, resulting in a field-effect operation with decreased threshold voltage. However, the increasing disorder in C8-BTBT induced by the C 60 nano-interlayer may reduce the hole mobility at the C8-BTBT/SiO 2 interface region and change the growth model of C8-BTBT. In addition, as confirmed by the transfer characteristic of the OFETs, the thin C 60 insertion layer isn’t continuous enough to induce an ambipolar transport behavior despite its high mobility. The competition between the two opposite effects results in compromised performance in such OFETs. The device performance parameters deteriorate generally with increasing the C 60 nano-interlayer thickness. So, it is inferred that the C 60 interlayer alone cannot improve the performance of the C8-BTBT/SiO 2 -based OFETs without further optimization. Importantly, the device performance exhibits an abnormal improvement with a 6 nm C 60 interlayer, which might be ascribed to a higher energy level shift of C8-BTBT caused by a quasi-continuous C 60 film at this thickness.
研究领域:
材料科学
·
电子工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Micromachines
·
2022
·Vol. 13
·期 6
·956
·
IF 3.523
Xiangxiang Gao,Hai-Yang Liu,Jincheng Zhang,Jian Zhu,Jingjing Chang,Yue Hao
The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3thin films by coordinating In2Se3with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3flake and In2Se3thin films showed mobilities of 12.8 cm2·V−1·s−1and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics.Keywords:two dimensional semiconductors;layer-by-layer assembly;field-effect transistors
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 8
·087308
·
IF 1.321
Hui-De Wang,David K Sang,Zhi-Nan Guo,Rui Cao,Jin-Lai Zhao,Muhammad Najeeb Ullah Shah,Tao-Jian Fan,Dian-Yuan Fan,Han Zhang
Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelectronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10−10 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in witnessed inspections field of food.
研究领域:
材料科学
·
生物医学
·
化学传感
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2023
·
IF 10.9
Leini Wang,Gang He,Wenhao Wang,Xiaofen Xu,Shanshan Jiang,Elvira Fortunato,Rodrigo Martins
The homojunction based on Ti 3 C 2 T x MXene-doped In 2 O 3 and indium oxide as the channel layer is realized in high-performance metal oxide thin film transistors (TFTs). Doping of MXene into In 2 O 3 results in n-type semiconductor behavior, realizing tunable work function of In 2 O 3 from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%. MXene-doped In 2 O 3 -based homojunction TFT presents optimal performance with electron mobilities of greater than 27.10 cm 2 /(V s) at 240 °C, far exceeding the maximum mobility of 3.91 cm 2 /(V s) for single-layer In 2 O 3 TFTs. The improved performance originates from boosting of a two-dimensional electron gas (2DEG) formed at carefully engineered In 2 O 3 /MXene-doped In 2 O 3 oxide homojunction interface. Besides, the transformation in conduction mechanism leads to better stability of MXene-doped In 2 O 3 homojunction devices compared to undoped bilayer In 2 O 3 . Low-frequency noise further illustrates that doping MXene into In 2 O 3 helps to reduce the device trap density, demonstrating excellent electrical performance. A resistor-loaded unipolar inverter based on In 2 O 3 /0.5% MXene-In 2 O 3 TFT has demonstrated full swing characteristics and a high gain of 13. The effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability, but also provides an effective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2025
·
IF 6.7
Zexi Lin,Wenxiao Zhao,Xing Lin,Liyan Zhang,Jiaqi Gao,Sheng Xu,Enguo Chen,Tailiang Guo,Yun Ye,Huipeng Chen
Neuromorphic vision systems have the capacity to simulate the perception and processing of visual information by visual cells in the retina. However, when confronted with the challenges posed by a substantial volume of complex data and complex environments, traditional neuromorphic vision systems are unable to handle redundant signals of overenhancement and suppression. These systems are required to face the considerable challenges posed by complicated circuits and algorithms. In this paper, we present an adaptive synaptic transistor with a built-in heterojunction that can switch between three modes of synaptic excitation-inhibition effect, excitation-adaptive, and inhibition-adaptive photoconductivity effect by utilizing light switching and wavelength change. The device can complete the entire adaptation process from excitation sensitization to self-adaptation to the initial current in 1 s, and from excitation sensitization to adaptation in 3.2 s. The adaptation speed is superior to that of the human eye (5 min). The combination of convolutional neural networks (CNNs) with adaptive synaptic transistors has yielded the development of an advanced neuromorphic vision system. This system exhibits fast self-adaptation and static image recognition and classification capabilities, with a recognition rate that exceeds 90%, thereby facilitating the advancement of next-generation neuromorphic vision systems.
研究领域:
神经形态工程
·
光电子学
·
人工智能
·
神经网络
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
Materials
·
2025
·Vol. 18
·期 9
·1980
·
IF 3.2
Haoxuan Xu,Bo Deng,Xinan Zhang
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO2) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO2/n++Si capacitors were evaluated, demonstrating that the optimized 10% F:ZrO2dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO2dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO2dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）