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Micromachines · 2021 ·Vol. 12 ·期 2 ·121 · IF 2.891

Route to Cost-Effective Fabrication of Wafer-Scale Nanostructure through Self-Priming Nanoimprint

Yue Su,Zhaoxin Geng,Weihao Fang,Xiaoqing Lv,Shicai Wang,Zhengtai Ma,Weihua Pei

Nanoimprint technology is powerful for fabricating nanostructures in a large area. However, expensive equipment, high cost, and complex process conditions hinder the application of nano-imprinting technology. Therefore, double-layer self-priming nanoimprint technology was proposed to fabricate ordered metal nanostructures uniformly on 4-inch soft and hard substrates without the aid of expensive instruments. Different nanostructure (gratings, nanoholes and nanoparticles) and different materials (metal and MoS2) were patterned, which shows wide application of double-layer self-priming nanoimprint technology. Moreover, by a double-layer system, the width and the height of metal can be adjusted through the photoresist thickness and developing condition, which provide a programmable way to fabricate different nanostructures using a single mold. The double-layer self-priming nanoimprint method can be applied in poor condition without equipment and be programmable in nanostructure parameters using a single mold, which reduces the cost of instruments and molds.Keywords:double-layer;nanoimprint;wafer-scale;nanostructure

CAS / MDL: 75-59-2
研究领域: 材料科学 · 纳米技术
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Laser & Photonics Reviews · 2025 · IF 10

MASCN Vapor-Assisted Fabrication of Compact and Large-Grain MAPbI3 Polycrystalline Wafer for X-Ray Detection and Imaging

Dan Liu,Feiyi Liao,Haipeng Di,Haibin Li,Shujie Tie,Jiangfeng Song,Lin Lei,Changan Chen

Lead halide perovskite wafers, which have adjustable size and thickness, are promising for the tailored fabrication of X-ray detectors. However, common voids and grain boundaries, acting as carrier traps in polycrystalline wafers, present a major challenge to achieving optimal optoelectronic properties. Herein, an innovative approach is adopted by introducing methylammonium thiocyanate (MASCN) vapor into the hot-pressing environment of MAPbI 3 wafers, promoting perovskite grain merging and growth. The resulting compact wafers with larger crystal grains display an extended average carrier lifetime ( τ avg ) of 31.61 ns, a high ion activation energy ( E a ) of 0.47 eV, a reduced dark current drift ( I drift ) of 4.11 × 10 −4 nA cm −1 s −1 V −1 , and an improved mobility-lifetime product ( µτ ) of 8.26 × 10 −4 cm 2 V −1 . These optimized MAPbI 3 wafer-based detectors achieve a high sensitivity of 16611 µC Gy air −1 cm −2 , a low detection limit (LoD) of 47.5 nGy air s −1 , and robust operational stability in X-ray detection. Furthermore, these detectors exhibit excellent X-ray imaging capability, achieving a high spatial resolution of 5.64 lp mm −1 . Therefore, the deployment of volatile thiocyanate salt during hot pressing provides a novel strategy for engineering high-quality polycrystalline perovskite wafers, propelling forward the field of X-ray detection.

CAS / MDL: 67-63-0
研究领域: 材料科学 · 电子工程 · 医学影像
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Materials · 2018 ·Vol. 11 ·期 2 ·239 · IF 2.467

Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate

Dandan Men,Yingyi Wu,Chu Wang,Junhuai Xiang,Ganlan Yang,Changjun Wan,Honghua Zhang

Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO2nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO2nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO2nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO2nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density “hotspots” derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.Keywords:wafer-scale;hierarchical arrays;RIE;Ag NPs;SERS substrate

CAS / MDL: 989-38-8
研究领域: 材料科学 · 纳米技术
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Frontiers in Chemistry · 2022 · IF 5.545

Inch-Sized Thin Metal Halide Perovskite Single-Crystal Wafers for Sensitive X-Ray Detection

Feng Anbo,Xie Shengdan,Fu Xiuwei,Chen Zhaolai,Zhu Wei

Metal halide perovskite single crystals are a promising candidate for X-ray detection due to their large atomic number and high carrier mobility and lifetime. However, it is still challenging to grow large-area and thin single crystals directly onto substrates to meet real-world applications. In this work, millimeter-thick and inch-sized methylammonium lead tribromide (MAPbBr3) single-crystal wafers are grown directly on indium tin oxide (ITO) substrates through controlling the distance between solution surface and substrates. The single-crystal wafers are polished and treated with O3 to achieve smooth surface, lower trap density, and better electrical properties. X-ray detectors with a high sensitivity of 632 µC Gyair−1 cm−2 under –5 V and 525 µC Gyair−1 cm−2 under –1 V bias can be achieved. This work provides an effective way to fabricate substrate-integrated, large-area, and thickness-controlled perovskite single-crystal X-ray detectors, which is instructive for developing imaging application based on perovskite single crystals.

CAS / MDL: 68-12-2
研究领域: 材料科学 · 物理学 · 电子工程
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CERAMICS INTERNATIONAL · 2021 · IF 4.527

Chemical-mechanical polishing performance of core-shell structured polystyrene@ceria/nanodiamond ternary abrasives on sapphire wafer

Chen Zhou,Xiangyang Xu,Lei Dai,Haiming Gong,Shuntian Lin

Driven by electrostatic attraction, Ce 4+ ions or/and positively charged detonation nanodiamond (DND) particles can absorb onto negatively charged polystyrene (PS) spherical colloids. Three types of core-shell structured composite abrasives, PS@CeO 2 , PS@DND and PS@CeO 2 /DND, can thus be assembled. When PS@CeO 2 and PS@DND were used to polish sapphire wafer at pad rotating speed of 120–150 r/min and load pressure of ~3 kg, the material removing rate (MRR) exceeded 1.0 μm h −1 , 10–20 % higher than unitary abrasives. The surface profile roughness (Ra) for wafer polished by these two composite abrasives was respectively 1.25 and 0.63 nm, which is superior to CeO 2 (Ra = 1.38 nm) and DND (Ra = 1.29 nm). When using PS@CeO 2 /DND, the polishing interface area can be increased owing to the combined effect of elastic PS spheres and intensively coated CeO 2 and DND. Meanwhile, the synergistic mechanism of sapphire-CeO 2 chemical reaction and the strong mechanical abrasion of DND particles benefit the polishing efficiency. MRR for this ternary composite abrasive attained 1.4–1.7 μm h −1 while sapphire can be smoothed to a sub-nanoscale roughness.

研究领域: 材料科学 · 化学工程
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Advanced Science · 2024 ·Vol. 11 ·期 46 ·2410303 · IF 14.3

Spontaneous Cooling Enables High-Quality Perovskite Wafers for High-Sensitivity X-Ray Detectors with a Low-Detection Limit

Wenyi Wu,Jianqiang Zhang,Ciyu Liu,Jiankai Zhang,Hoajie Lai,Zhongqiang Hu,Hai Zhou

Developing high-quality perovskite wafers is essential for integrating perovskite technology throughout the chip industry chain. In this article, a spontaneous cooling strategy with a hot-pressing technique is presented to develop high-purity, wafer-scale, pinhole-free perovskite wafers with a reflective surface. This method can be extended to a variety of perovskite wafers, including organic–inorganic, 2D, and lead-free perovskites. Besides, the size of the wafer with diameters of 10, 15, and 20 mm can be tailored by changing the mold. Furthermore, the mechanism of spontaneous cooling for improving the quality of perovskite wafers is revealed. Finally, the high-quality lead-free Cs 3 Cu 2 I 5 perovskite wafers demonstrate excellent X-ray detection performances with a high sensitivity of 3433.6 µC Gy air −1 cm −2 and a low detection limit of 33.17 nGy air s −1 . Moreover, the Cs 3 Cu 2 I 5 wafers exhibit outstanding environmental and operational stability even without encapsulation. These research presents a spontaneous cooling strategy to achieve wafer-scale, high-quality perovskites with mirror-like surfaces for X-ray detection, paving the way for integrating perovskites into electronic and optoelectronic devices and promoting the practical application of perovskite X-ray detectors.

研究领域: 材料科学 · 半导体物理 · 医学成像
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Smart Materials and Structures · 2020 ·Vol. 29 ·期 11 ·114003 · IF 3.613

Study on the rheological properties and polishing properties of SiO2@CI composite particle for sapphire wafer

Jisheng Pan,Zhijun Chen,Qiusheng Yan

To study the rheological properties and polishing performance of magnetorheological fluids (MRFs) prepared with SiO2@carbonyl iron (CI) core-shell particles, SiO2@CI core-shell particles with different shell thicknesses were synthesized by an improved Stöber method controlling the amount of tetraethyl orthosilicate (TEOS). Then, four types of MRFs which dispersed with core-shell particles with thin shells, core-shell particles with thick shells, SiO2 particles, or carbonyl iron were prepared for sapphire polishing. The results show that the rheological properties of MRF based on thicker shell SiO2@CI are enhanced compared to those of MRFs prepared by dispersing abrasive and CI. Comparing with other MRFs, sapphire can obtain better surface quality when using thicker shell SiO2@CI. The MRF fabricated by SiO2@CI core-shell particles can increase the contact area between the abrasive and the workpiece and enhance the contact stress, which improves the solid-phase reaction rate and mechanical removal efficiency of silica and sapphire, thereby improve the polishing efficiency.

研究领域: 材料科学 · 机械工程 · 表面工程
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CERAMICS INTERNATIONAL · 2021 · IF 4.527

Rapid fabrication of extremely thin Nano-Al2O3 transparent ceramic wafers through nonaqueous tape casting

Yu He,Yunxiang Cai,Ling Zhang,Kaige Liu,Gang Liu,Bingxi Xiang,Jianpang Zhai,Ling Bing Kong,Tianshu Zhang,Yin Liu

Al 2 O 3 transparent ceramics have important applications in electronics, solid-state lighting, military and 5G industries. At present, thin and large-size Al 2 O 3 ceramics are urgently required by enterprises. Tape casting method has emerged as a powerful tool in producing transparent ceramics, but the preparation of the slurries is generally very time consuming. In this study, a one-step ball milling process was proposed to fabricate Al 2 O 3 transparent ceramics through non-aqueous tape casting, in which green tapes were obtained with uniform texture and no distortion. Thickness of the Al 2 O 3 transparent ceramics approached 0.1 mm. The effects of dry pressing on single and double-layer tapes were also compared. It was found that dry pressing has essentially no effect on monolayer samples, but contributed to improve the densification and promoted grain growth of the bilayer samples. Our results could be used as reference for the preparation of extremely thin Al 2 O 3 transparent ceramic wafers.

研究领域: 材料科学 · 陶瓷 · 电子 · 固态照明 · 军事 · 5G产业
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Materials Today Communications · 2024 · IF 3.7

A strategy for the preparation of low dielectric FGQD/PSPI composite films in wafer-level packaging

Hangqian Wang,Jialin Zhang,Jinhui Li,Xialei Lv,Shuye Zhang,Guoping Zhang,Rong Sun

Advancement of wafer-level packaging (WLP) has heightened the requirements for photosensitive polyimide (PSPI) materials, where the low dielectric property is a key element to realize high frequency communication. Herein, a poly(amidate) (PAE) was prepared using Pyromellitic Dianhydride, 4,4’-diaminodiphenyl ether, and hydroxyethyl methacrylate as the photosensitive group. Specifically, the fluorinated graphene quantum dots (FGQD) was introduced into the PAE resin by in situ polymerization, and the prepared composite films of photosensitive polyimide-fluorinated graphene quantum dots (PSPI-FGQD) showed excellent dielectric constants and other comprehensive properties. Compared with pure PSPI, the dielectric constant of PSPI-FGQD decreases from 3.8 to 3.0 at 1 MHz; the tensile strength increases from 84.5 to 110.1 MPa, the elongation at break raises from 5.24 % to 17.3 %, and the Young's modulus increases from 2.68 GPa to 2.88 GPa. The glass transition temperature ( T g ) is also increased to 420 °C with the introduction of FGQD. Apart of these, the fine patterning ability was observed for the FGQD/PSPI composite film, achieving a high photolithography resolution of 10 μm (L/S). To conclude, the preparation method of low dielectric FGQD/PSPI materials has promising potential applications in advanced packaging.

CAS / MDL: 52628-03-2
研究领域: 材料科学 · 电子工程
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Journal of Physical Chemistry Letters · 2022 · IF 6.888

High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr3 Wafer

Xiao Zhao,Shimao Wang,Fuwei Zhuge,Yanan Song,Toru Aoki,Weiwei Dong,Mengyu Fu,Gang Meng,Zanhong Deng,Ruhua Tao,Xiaodong Fang

Considering the disadvantages of the common methods for CsPbBr3 single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr3 wafers. The effects of HP temperature on the phase purity of HP-CsPbBr3 wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr3 wafers has been optimized to be 150 °C, and the HP-CsPbBr3 wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LED with a light power density of 1.1 μW cm–2, the responsivity, external quantum efficiency, and detectivity of the devices reach 19.79 A W–1, 4634%, and 2.14 × 1013 Jones, respectively, and a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs has been achieved.

研究领域: 材料科学 · 光电子学 · 纳米技术 · 固体物理
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International Journal of Precision Engineering and Manufacturing · 2021 ·Vol. 22 ·期 5 ·951-963 · IF 2.106

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

He Yan,Yuan Zewei,Song Shuyuan,Gao Xingjun,Deng Wenjuan

Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si 4 C 4 O 4 , C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.

研究领域: 材料科学 · 半导体加工技术
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Small · 2021 ·Vol. 17 ·期 40 ·2102884 · IF 13.281

Heterogeneous Integration of Chiral Lead–Chloride Perovskite Crystals with Si Wafer for Boosted Circularly Polarized Light Detection in Solar-Blind Ultraviolet Region

Xinyuan Zhang,Wen Weng,Lina Li,Hongchun Wu,Yunpeng Yao,Ziyang Wang,Xitao Liu,Wenxiong Lin,Junhua Luo

Chiral hybrid organic–inorganic perovskites (HOIPs) have been well developed for circularly polarized light (CPL) detection, while new members that target at solar–blind ultraviolet (UV) region remain completely unexplored. Here, an effective design strategy to demonstrate circular polarization-sensitive solar–blind UV photodetection by growing wide-bandgap chiral HOIP [( R )-MPA] 2 PbCl 4 (( R )-MPA = methylphenethylammonium) single crystals onto silicon wafers, with well-defined heterostructures, is reported. The solid mechanical and electrical connection between the chiral HOIP and silicon wafer results in strong built-in electric field at heterojunction, providing a desirable driving force for separating/transporting carriers generated under CPL excitation at 266 nm. Unexpectedly, during such a transport process, not only the chirality of HOIP crystal is transferred to the heterostructure, but also the circular polarization sensitivity is significantly amplified. Consequently, anisotropy factor of the resultant detectors can reach up to 0.4 at zero bias, which is much higher than that of the pristine single-phase chiral HOIP (≈0.1), reaching the highest among the reported CPL–UV photodetectors. As far as we know, the integration of chiral HOIP crystals with silicon technology is unprecedent, which paves a way for designing boosted-performance CPL detectors in solar–blind UV region as well as for other advanced optoelectronic devices.

研究领域: 材料科学 · 光电子学 · 纳米技术
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