ADVANCED FUNCTIONAL MATERIALS
·
2019
·Vol. 29
·期 51
·1904461
·
IF 15.621
Junpeng Zeng,Cuifang Meng,Xiaoming Li,Ye Wu,Shuting Liu,Hai Zhou,Hao Wang,Haibo Zeng
Inorganic halide perovskite (HP)-based photodetectors (PDs) have exhibited fast response speed and high responsivity, but with low detectivity due to the high dark current of devices. Additionally, the intrinsic instability of HPs and interface deterioration originating from ion migration inhibit their practical applications severely. A tunneling organic layer is introduced to solve both these problems. Light-induced charge carriers can flow across the interfacial (poly(methyl methacrylate), PMMA) layer with appropriate thickness via the Fowler–Nordheim tunneling effect. Due to the effective control of dark current, the photo-/dark-current ratio reaches a giant value of 2.13 × 10 8 , and the peak detectivity is as high as 1.24 × 10 13 Jones. With such superiority, light signal as weak as 244 pW is accurately imaged by a PD array. Additionally, the hydrophobic organic layer inhibits the destruction of HPs caused by moisture and ion migration induced interface reaction, and negligible response attenuation is observed during continuous work in a humid environment for 48 h. This heterojunction structure design provides a new strategy to enhance the performance and stability of perovskite-based photoelectric and photovoltaic devices.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
Nanoscale
·
2024
·
IF 5.8
Guo He,Dezhi Yang,Sizhe Tao,Liqing Yang,Dechao Guo,Jingbo Zheng,Ji Li,Jiangshan Chen,Dongge Ma
Perovskite photodetectors (PPDs) offer a promising solution with low cost and high responsivity, addressing the limitations of traditional inorganic photodetectors. However, there’s still room for improvement in terms of dark current and stability of air-processed PPDs. In this study, 4',4"-Tris(carbazl-9-yl)-triphenylamine (TCTA) is utilized as nucleation agent to enhance the quality of perovskite film. The synergistic effect of TCTA and moisture promotes rapid nucleation of PbI2-PbCl2, resulting in an increased nucleation rate and the elimination of pinholes in the film. By employing additive engineering, we obtain a PbI2-PbCl2 layer with high coverage, leading to a lower density of traps in the corresponding perovskite film. Consequently, the modified PPD exhibits a remarkable reduction in dark current density by over one order of magnitude, reaching 2.4×10-10 A cm-2 at -10 mV, along with a large linear dynamic range (LDR) of 183 dB. Furthermore, the resulting PPD demonstrates remarkable stability, retaining 90% of the initial external quantum efficiency (EQE) value even after continuous operation for over 3200 hours. Due to a fast response time in nanosecond range, the PPD can convert modulated light signals into electrical signals at a speed of 588 Kbit s-1, highlighting great potential in the field of optical communication.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SENSORS
·
2025
·Vol. 25
·期 9
·2740
·
IF 3.5
Xuefeng Huangfu,Junyu Chen,Gaohui Ge,Jianyu Li,Jiazhen Zhang,Qinhao Lin,Hao Xu,Shu Min Wang
Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 1012Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W−1was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Ya Wang,Huicheng Hu,Xi Ran,Long Chen,Mengxuan Yu,Peilin Liu,Jungang He,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
Lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors (PDs) are promising devices for low-cost, high-performance, and large-area infrared imaging. To achieve commercial applications, it is necessary not only to further improve performance but also to achieve high stability. In this study, the uncontrolled migration of the Au element into the PbS CQD layers was identified. An interface passivation approach was employed, which involved the implementation of a self-assembled island-like LiF interfacial layer between the PbS-EDT layer and the Au electrode. The approach effectively mitigated the detrimental migration of the Au element and substantively enhanced the stability of PbS CQD PDs. At the same time, this strategy substantially suppressed the dark current in the PbS CQD PDs due to interface passivation, which led to more than 2-fold improvements of the specific detectivity to 4.8 × 1012 Jones. A PbS CQD photodiode imager based on the thin-film transistor readout circuit was finally fabricated. Penetration imaging and material discrimination imaging were demonstrated successfully by the PbS CQD imager.
研究领域:
材料科学
·
光电工程
✓ 已验证
DOI
高影响因子
ORGANIC ELECTRONICS
·
2016
·
IF 3.471
Yukun Wang,Dezhi Yang,Xiaokang Zhou,Saad M. Alshehri,Tansir Ahamad,Agafonov Vadim,Dongge Ma
CH 3 NH 3 PbI 3 /C 60 heterojunction photodetectors were here fabricated. The peak EQE achieves ∼80% in the visible-light range from 400 to 760 nm. Benefitting from eliminating the leakage current (PEDOT:PSS-free), extremely low dark current density (0.6 nA/cm 2 ) and high specific detectivity (2.7 × 10 13 Jones) are acquired.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Xiaoming Tang,Hai Zhou,Xiyan Pan,Ronghuan Liu,Dingjun Wu,Hao Wang
Organic–inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. However, the commercialization of the perovskite-based devices still faces many challenges, one of which is the inclusion of the toxic lead. Herein, we demonstrated a two-step solution method for synthesizing tin-based perovskite nanowires (NWs) with their application in photodetectors (PDs). By changing the halide exchange time and the Sn content in the precursor, the dark current of the CsPbxSn1–x(BryI1–y)3 perovskite NW PDs increased with increasing content of tin and decreased with increasing Br concentration, and the lowest dark current with a value of 0.672 nA at 1 V was achieved for the perovskite alloy NW PDs synthesized with 0.5 mg mL–1 SnI2. Our optimized perovskite alloy NW PDs showed high performance with a linear dynamic range of up to 120 dB, a rising/falling time of 4.25/4.82 ms, and a detectivity of 2 × 1010 Jones. In addition, our Sn-based perovskite NW devices could maintain good performance after storing in air for 30 days. These results demonstrated good practical application for the Sn-based perovskite NW devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
RSC Advances
·
2024
·Vol. 14
·期 27
·19124-19133
·
IF 3.9
Zhenting Yang,Aimiao Qin,Haiqing Qin,Zhenlin Li,Yong Xiang,Hao Liu,Jinyu Qiu,Xinyu Wang
Cesium-based lead-free double perovskite materials (Cs2AgBiBr6) have garnered significant attention in the X-ray detection field due to their environment friendly characteristics. However, their substantial ion migration properties lead to large dark currents and detection limits in Cs2AgBiBr6-based X-ray detectors, restricting the detection performance of the device. In terms of process technology, ultrasonic spraying is more suitable than a spin-coating method for fabricating large-area, micron-scale perovskite thick films, with higher cost-effectiveness, which is crucial for X-ray detection. This work introduces a BA+ (BA+ = CH3CH2CH2CH2NH3+, n-butyl) source into the precursor solution and employs ultrasonic spraying to fabricate quasi-two-dimensional structured polycrystalline (BA)2Cs9Ag5Bi5Br31 perovskite thick films, developing a low-cost, eco-friendly X-ray detector with low dark current density and low detection limit. Characterization results reveal that the ion migration activation energy of (BA)2Cs9Ag5Bi5Br31 reaches 419 meV, approximately 17% higher than that of traditional three-dimensional perovskites, effectively suppressing perovskite ion migration and subsequently reducing the dark current. The (BA)2Cs9Ag5Bi5Br31-based X-ray detectors exhibit high resistivity (about 1.75 × 1010 Ω cm), low dark current density (66 nA cm−2), minimal dark current drift (0.016 pA cm−1 s−1 V−1), and detection limit (138 nGyair s−1), holding considerable promise for applications in low-noise, low-dose X-ray detection.
研究领域:
材料科学
·
物理学
·
辐射探测技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Yu Liu,Li Chen,Shaohong Li,Zejiang Gao,Yuping Pang,Bingsuo Zou
Metal halide perovskites have emerged as promising candidates for self-powered photodetectors due to their exceptional optoelectronic properties, including low exciton binding energies, high absorption coefficients, superior charge transport properties, and solution processability. However, the inherent high dark current in perovskite-based devices remains a fundamental limitation to their performance. In this study, we present an interface engineering strategy to overcome this challenge by incorporating a self-assembled monolayer (SAM) between the TiOx electron transport layer and the CsPbBr3 perovskite quantum dot film. Comprehensive experimental analysis indicates that the SAM layer performs a critical dual function: it effectively blocks interfacial electron injection as a charge barrier and promotes higher quality perovskite films through crystallinity optimization and defect passivation, ultimately suppressing non-radiative recombination. This synergistic effect results in a reduction of dark current to an ultralow value of 2.13 × 10−10 A. The optimized photodetector exhibits high-performance metrics at zero bias under 365 nm illumination, achieving an outstanding on/off ratio of 7.6 × 106, a high specific detectivity of 2.74 × 1012 Jones, and an extensive linear dynamic range of 137.7 dB. Furthermore, the device demonstrates exceptional environmental stability, maintaining 91.8% of its initial efficiency after 120 days of storage in a nitrogen atmosphere without encapsulation. This work establishes a universal approach for defect suppression in perovskite optoelectronics, with potential applications extending to solar cells, light-emitting diodes, and radiation detectors.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2024
·Vol. 34
·期 22
·2313776
·
IF 18.5
Fapeng Sun,Haojie Xu,Wenting Hong,Zhihua Sun,Wei Liu
Metal thio(seleno)phosphates are renowned for their multifaceted physical characteristics and versatile applications, particularly in optoelectronics. In detection applications, a low and stable dark current is crucial, enhancing the sensitivity and signal-to-noise ratio of detectors. Herein, a van der Waals layered material has synthesized, CuInP 2 Se 6 . Despite its nanometric scale, 2D CuInP 2 Se 6 detector transcends the conventional absorption inefficiencies tied to ultrathin materials. It delivers exceptional ultraviolet–visible detection, characterized by an ultralow, stable dark current of 150 fA, and a noise power density of 27.7 fA Hz −1/2 at room temperature. The in-depth investigation reveals a responsivity of 4.47 A W −1 , an external quantum efficiency of 1369%, a special detectivity of 1.44 × 10 13 Jones, and a rapid response speed of 280 µs, positioning it at the pinnacle of 2D photodetector performance. The CuInP 2 Se 6 ’s ultralow, stable dark current paves the way for X-ray detection, achieving an unprecedented sensitivity of 1.32 × 10 5 µC Gy air −1 cm −2 and a low detection limit of 0.15 µGy air s −1 . Furthermore, 2D CuInP 2 Se 6 detector exhibits a remarkable image-sensing capability, adeptly capturing intricate patterns with high resolution. This discovery indicates its promise in revolutionizing integrated micro/nano optoelectronic devices, opening avenues for advancements in light and X-ray detection and imaging technologies.
研究领域:
材料科学
·
光学
·
医学成像
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 32
·10472-10477
·
IF 7.393
Xia An,Chao Fan,Xiancheng Meng,Shuo Yuan,Yongkai Jing,Zhe Liu,Chun Sun,Yonghui Zhang,Zihui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
As an emerging two-dimensional material, tin disulfide (SnS2) has attracted growing interest due to its superior performance in high-speed and high-sensitive photodetectors. However, low responsivity, large dark current, and slow response speed severely hinder its further practical application. Herein, the enhanced photodetection performance of Schottky photodetectors based on SnS2 nanosheets and Schottky contact effects on the photodetection performance were investigated. High-quality SnS2 nanosheets were synthesized via a facile hydrothermal method. Then Schottky photodetectors with Pt/SnS2/Al and Au/SnS2/Al structures were fabricated and detected. Compared to the Ohmic Al/SnS2/Al photodetector, the Schottky Pt/SnS2/Al and Au/SnS2/Al photodetectors exhibited better photodetection performances, including tenfold higher responsivities, tenfold lower dark currents, and slightly shorter response times. In particular, the Schottky Pt/SnS2/Al photodetector obtained a low dark current of 5.2 nA, a high responsivity of 952 μA W−1, and a response time of 0.13 s. The enhancement in the photodetection performance of the Schottky photodetectors is due to the reverse bias and built-in electric field caused by Schottky contacts. Our finding provides an effective approach to enhance the photodetection performance of SnS2-based photodetectors for high-performance optoelectronic applications.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Ya Wang,Huicheng Hu,Mohan Yuan,Hang Xia,Xingchen Zhang,Jing Liu,Ji Yang,Shaoqiu Xu,Zhaorong Shi,Jungang He,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
Lead sulfide (PbS) colloidal quantum dots (CQDs) for photodetectors (PDs) have garnered great attention due to their potential use as low-cost, high-performance, and large-area infrared focal plane arrays. The prevailing device architecture employed for PbS CQD PDs is the p–i–n structure, where PbS CQD films treated with thiol molecules, such as 1,2-ethanedithiol (EDT), are widely used as p-type layers due to their favorable band alignment. However, PbS-EDT films face a critical challenge associated with low film quality, resulting in many defects that curtail the device performance. Herein, a controlled oxidization process is developed for better surface passivation of the PbS-EDT transport layer. The dark current density (Jd) of PbS CQD PDs based on optimized PbS-EDT layer shows a dramatic decrease by nearly 2 orders of magnitude. The increase of carrier lifetime and suppression of carrier recombination via controlled oxidation in PbS-EDT CQDs were confirmed by transient absorption spectra and electrochemical impedance spectra. The device based on the optimized PbS-EDT hole transport layer (HTL) exhibits a specific detectivity (D*) that is 3.4 times higher compared to the control device. Finally, the CQD PD employing oxidization PbS-EDT CQDs is integrated with a thin film transistor (TFT) readout circuit, which successfully accomplishes material discrimination imaging, material occlusion imaging, and smoke penetration imaging. The controlled oxidization strategy verifies the significance of surface management of CQD solids and is expected to help advance infrared optoelectronic applications based on CQDs.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 25
·9247-9254
·
IF 5.7
Zhaolin Song,Menghua Zhu,Sixin Chen,Meng Xu,Wanqi Jie
All-inorganic halide perovskite CsPbBr3 with superior environmental stability, remarkable radiation hardness and great defect tolerance has emerged as a competitive material in radiation detection. However, the operational stability of CsPbBr3 based detectors remains a problem due to their unstable electrical properties. Perovskite nanowires with a preferred orientation show greater accessibility compared with their single-crystal partners that undergo time-consuming growth. However, the synthesis of perovskite nanowire arrays with excellent stability, tunable distribution arrangements and adjustable compositions has been a major challenge. Herein, CsPbBr3 perovskite columnar crystal films with a controlled diameter (50–400 nm) are successfully synthesized with porous anodic aluminum oxide (AAO) templates. The passivated surface between AAO and CsPbBr3 nanowires resulted in reduced ion migration and stable operation performance. The CsPbBr3 based X-ray detectors display a low dark current drift of 2.185 × 10−6 nA cm−1 s−1 V−1, a high resistivity of 3.946 × 1011 Ω cm and a detection limit of 3.70 μGyair s−1 with an AAO pore size of 50 nm. This work establishes a suitable method to synthesize all-inorganic perovskite nanowires with controlled diameters for stable X-ray detection performance.
研究领域:
材料科学
·
辐射探测技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）