Nan He,Pifu Gong,Xingyu Zhang,Youquan Liu,Linfeng Dong,Zheshuai Lin
Hybrid organic–inorganic metal halide (OIMH) perovskites are regarded as potential photoluminescent (PL) materials and have attracted intensive attention. Here, we select 1-methylpiperazine as an organic component and successfully obtain a two-dimensional (2D) Ge-based OIMH perovskite, (1-mpz)GeBr4. It features a 2D layered structure composed of distorted [GeBr6]4– octahedra with organic (C5H14N2)2+ located between the layers. (1-mpz)GeBr4 exhibits strong orange color under ultraviolet (UV) light and possesses good PL stability for over 2 months. The photoluminescence quantum efficiency is measured to be 7.15% at room temperature, which is the largest among all reported low-dimensional Ge-based perovskites. Experimental measurements, combined with first-principles calculations, reveal that its PL property is attributed to self-trapped excitons (STEs) from [GeBr6]4– groups. From the deduced structure–property relationship, Ge-based OIMH PL perovskites with good stability and high PL efficiency can be expected.
Si-Jie Li,Xiongkai Tang,Chiu Hwi Ng,Jia Yang Lim,Wai Kit Tang,Wen-Cheng Chen,Yanping Huo,Maggie Ng,Season Si Chen,Dongdong Zhang,Lian Duan,Man-Chung Tang
Improving operational stability for organic light-emitting diode (OLED) is a hotspot in scientific research. It is proposed that silicon (Si) and germanium (Ge) can exhibit hyperconjugation effects and participate in conjugated systems, thereby stabilizing molecules’ excited and polarized states. Herein, the importance of incorporating Si and Ge in multi-resonance thermally activated delayed fluorescence emitters is revealed to improve their luminescence efficiency and intrinsic stability. Computational studies show that introducing Si and Ge atoms can strengthen the C−Si and C−Ge bonds due to the hyperconjugation effect, resulting in higher bond dissociation energies and molecular photostability. With the efficient spin-vibronic coupling and spin-orbital coupling, the flexible conformations of the emitters facilitate the spin-flip processes by enriching the characters and density of their excited states. A maximum external quantum efficiency of 30.0% for BN -Ge -based blue-emitting OLEDs, with (Commission Internationale de l'Eclairage) CIE y ≤ 0.18 is realized. In particular, the LT 90 at 1000 cd m −2 of 48.3 and 7.1 h is achieved for BN-Si -based and BN-Ge -based OLEDs, respectively, using the developed deuterated SiCzCz-d 15 and SiTriCz2-d 16 as the hole-transporting and host materials. It is anticipated that the study will provide insights into the design of group IV element-containing multiple-resonance thermally activated delayed fluorescent emitters for optoelectronics applications.
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