APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Le Zhai,Xueli Yang,Liunan She,Yingqi Di,Guofeng Pan,Jie Cheng
The chemical mechanical polishing (CMP) process for the titanium (Ti) barrier layer in Through-Silicon Via (TSV) technology is crucial for the fabrication of advanced 3D and 2.5D integrated circuit (IC) chip packaging. A major challenge in this process is achieving a high Ti removal rate while carefully optimizing the selectivity ratio between Ti and copper (Cu). This study rationally selected 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) as a complexing agent and α-benzoin oxime (ABO) as a corrosion inhibitor in CMP for TSV Ti-based barrier layers. A combined experimental and theoretical approach was used to explore the CMP effects of the two reagents. The experimental results demonstrate that PBTCA significantly enhances the Ti removal rate, while the adsorption of ABO on the Cu surface mitigates the corrosion caused by PBTCA and effectively improved the surface quality of both Cu and Ti. Density Functional Theory (DFT) calculations were performed to analyze the interaction between PBTCA and ABO molecules at the atomic level. This study presents an effective method for removing Ti barrier layers from TSV by using PBTCA and ABO synergistically, providing a practical and effective solution for barrier layer CMP in advanced IC packaging applications.
研究领域:
微电子学
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材料科学
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产品关联
DOI
高影响因子
Applied Sciences-Basel
·
2024
·Vol. 14
·期 18
·8285
·
IF 2.5
Yihang Liu,Zongmao Lu,Jiajie Wang,Jinghui Lai,Ziyang Li,Chu Zhang,Yuhang Qi
Cu interconnect chemical mechanical polishing (CMP) technology has been continuously evolving, leading to increasingly stringent post-CMP cleaning requirements. To address the environmental pollution caused by traditional post-CMP cleaning solutions, we have explored the use of photocatalytic processes to remove citric acid, which is a commonly used complexing agent for CMP. In this study, CeO2abrasives, characterized by a hardness of 5.5, are extensively employed in CMP. Importantly, CeO2also exhibits a suitable band structure with a band gap of 2.27 eV, enabling it to photocatalytically remove citric acid, a commonly used complexing agent in Cu CMP. Additionally, the integration of H2O2, an essential oxidant in Cu CMP, enhances the photocatalytic degradation efficiency. The research indicates that the removal rate of single-phase CeO2was 1.78 mmol/g/h and the degradation efficiency increased by 40% with the addition of H2O2, attributed to the hydroxyl radicals generated from a Fenton-like reaction between H2O2and CeO2. These findings highlight the potential of photocatalytic processes to improve organic contaminant removal in post-CMP cleaning, offering a more sustainable alternative to conventional practices.
研究领域:
材料科学
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环境科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
Materials
·
2023
·Vol. 16
·期 19
·6612
·
IF 3.4
Bo Li,Lei Fan,Jie Bai,Jinhang He,Jianfeng Su,Song Wang,Chao Deng,Shifeng Liu,Zhiqing Zhang
Porosity is closely related to the corrosion and wear properties of a coating processed by thermal-spraying technology, and the quantitative characterization of porosity is a crucial part of the research on coating structures. The current image analysis method often uses the mechanical polishing method recommended by ISO to measure a coating porosity. This method has been proved to be an effective method for the characterization of oxide coatings. However, due to the significant differences in the physical and chemical properties between aluminum and oxides, this method may not be suitable for aluminum coatings, and a more appropriate approach needs to be explored. In this paper, the effects of three polishing technologies (mechanical polishing, argon-ion-beam polishing, and electrolytic polishing) on the porosity measurement of pure aluminum coatings were compared and studied. The research results showed that the commonly used mechanical polishing method and more advanced argon-ion-beam polishing method could not completely reveal the pore structure because SiC particles would be embedded in the pure aluminum coatings during mechanical polishing, filling large pores. Although electrolytic polishing technology had advantages in revealing the macroporous structure, it would introduce a microporous structure and oxides, which would affect the measurement of the coating porosity. The composite polishing technology (electrolytic polishing + argon-ion-beam polishing) could perfectly reveal the pore structure in the pure-aluminum coating, and the porosity of arc-sprayed aluminum coating was 9.9%, which was close to the macroscopic true value measured using the weighing method of 10.2%.Keywords:coating;mechanical polishing;argon ion beam;electrolytic polishing;porosity
研究领域:
材料科学
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表面工程
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产品关联
DOI
PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Zhenyu Zhang,Ning Wang,Xingzi Wang,Zheng Zhao,Chen Dong,Xianmin Tan,Yuanyuan Zheng,Zongyu Feng,Xiangxi Zhong,Juanyu Yang,Xiaowei Huang
With the linewidth of integrated circuits has progressively narrowed, imposing higher demands on the chemical mechanical polishing (CMP) process. Cerium oxide nanoparticles are widely used as abrasives in CMP, with their physical structure and the surface content of Ce 3+ ions and oxygen vacancies directly affecting their CMP performance. Here in, we synthesized La/Pr/Nd doped CeO 2 with the porous self-assembled spherical structures. Doping with La/Pr/Nd reduced the grain size of cerium oxide, increased its specific surface area, decreased the pore size, and increased the pore volume. HR-TEM analysis shows that the porous self-assembled spherical CeO 2 primarily exposes the (111) crystal facet. Additionally, the density functional theory (DFT) calculation, XPS, H 2 -TPR and XANES analyses shown that doping of La/Pr/Nd facilitated the formation of oxygen vacancies and increased the Ce 3+ content on the (111) crystal facet of the CeO 2 . La atoms are more likely to stabilize on the CeO 2 (111) surface compared to Pr and Nd atoms. The CMP results indicated that, The La-CeO 2 exhibited a higher MRR of 338 ± 7.54 nm/min, which is a 35 % increase compared to p-CeO 2 , and achieved superior surface roughness ( Ra = 0.201 ± 0.010 nm).
研究领域:
材料科学
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纳米技术
✓ 已验证
DOI
高影响因子
ECS Journal of Solid State Science and Technology
·
2019
·Vol. 8
·期 5
·P3075
·
IF 1.795
Peng He,Bingbing Wu,Shuai Shao,Tong Teng,Peng Wang,Xin-Ping Qu
Cobalt has been applied as liners in current Cu interconnect and even as interconnect conductors in next-generation interconnect. In this work, effects of corrosion inhibitors 1, 2, 4-triazole (TAZ) on Co chemical corrosion, galvanic corrosion between Cu and Co, and Co polishing properties in the H2O2 based acidic slurry have been systematically investigated. Results show that 5 mM TAZ yields a low static etching and removal rate with a selectivity of about 1: 1 for Co to Cu, applicable for Co barrier/ Cu CMP, while 100 mM TAZ yields a high removal rate with same selectivity, applicable for Co via and trench CMP. It demonstrates that TAZ can effectively inhibit the galvanic corrosion between Co and Cu. Additionally, the adsorption behavior of TAZ on Co surface is both physisorption and chemisorption. In case of 5 mM TAZ, self-assembly TAZ molecules absorb on native Co oxide. In case of 100 mM TAZ, more soluble Co-TAZ complexes form, which reduces the stability of the passivation layer and results in pitting corrosion.
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
ECS Journal of Solid State Science and Technology
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2024
·Vol. 13
·期 5
·054001
·
IF 1.8
Changxin Dong,Xinhuan Niu,Jianghao Liu,Ni Zhan,Yida Zou,Chao He,Xinjie Li,Fu Luo,Yunhui Shi,Jiabao Cheng
For Ruthenium (Ru)-based copper (Cu) interconnects Cu film chemical mechanical polishing (CMP), it is crucial to select appropriate pH regulators in the slurry to ensure the chemical reactions and maintain the stability of the polishing chemical environment. In this study, the effects of inorganic pH regulator KOH, organic pH regulator diethanolamine (DEA), and 2-amino-2-methyl-1-propanol (AMP) on CMP and slurry properties of Cu film were compared. It was found when using AMP as a pH regulator, the Cu/Ru removal rate selectivity (RRS) can reach 598:1, the surface roughness of Cu film decreased to 0.76 nm, and the slurry can remain stable for at least 7 d. The performance order of the three pH regulators is AMP＞KOH＞DEA. Meanwhile, through experimental results and test analysis, it has been confirmed that AMP can also play a multifunctional role as a complexing agent, dispersant, and surfactant. Therefore, AMP can replace KOH as a new pH regulator in weak alkaline slurries. This result plays an important role in guiding the selection of organic pH regulators in the optimization of Cu film CMP slurry.
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Shang Gao,Boyu Hu,Xin Song,Zhigang Dong,Renke Kang
Chemical mechanical polishing (CMP) offers promising pathway to smooth 4H-SiC. Dispersion stability of polishing slurry is crucial factor affecting 4H-SiC performance. Particles in polishing slurry can easily agglomerate due to poor dispersion stability, affecting surface quality of wafers. Nano-Al 2 O 3 is common particle in the slurry that directly controls mechanical removal. In this paper, the impact of different dispersants (PEG, (NaPO 3 ) 6 , and NH 4 PAA) on the dispersibility of slurry containing nano-Al 2 O 3 is studied. Results indicate that the slurry containing NH 4 PAA exhibits the greatest dispersion stability with superior 4H-SiC surface quality, with surface roughness (Sa) reaching 1.054 nm. The slurry containing PEG shows poor dispersion, leading to poor SiC surface quality, and the Sa reached 5.314 nm. The dispersion mechanism of different dispersants is also discussed.
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
DALTON TRANSACTIONS
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2025
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IF 3.3
Xiaohai He,Bo Gao,Qingyuan Wu,Chengrui Xin,Junjie Xue,Fangwei Lu,Xin-Ping Qu,Simin Li,Fan Zhang,Hui Shen
Chemical mechanical polishing (CMP) represents one of the most important steps in the manufacturing of integrated circuits, and high surface quality is always required for the CMP processes of shallow trench isolation (STI) structures. Herein, a new series of polydopamine (PDA)-coated cerium oxide core–shell nanoparticles has been developed as efficient and non-damaging abrasives for CMP of SiO2 on the surface of silicon wafers. The composite abrasives with the structure of SiO2@CeO2@PDA have been fabricated in a simple manner and thoroughly characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The SiO2 core enhances the content of Ce3+ in the abrasives, while the water-soluble PDA layer facilitates the interaction between the abrasives and SiO2 dielectrics. As a result, the wafers polished with SiO2@CeO2@PDA not only achieved a high polishing rate, but also exhibited a high surface quality (Ra = 0.109). This study not only presents a new efficient and non-damaging type of cerium oxide abrasive for CMP, but also highlights the potential of the surface coordination strategy in the fabrication of advanced abrasives for the manufacturing of integrated circuits.
研究领域:
材料科学
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半导体制造
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产品关联
DOI
PubMed
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2023
·
IF 5.2
Wenxiang Xie,Zhenyu Zhang,Xin Chen,Shiqiang Yu,Chunjing Shi,Hongxiu Zhou,Wei Wen
For obtaining a sub-nanometer surface, the material removal rate (MRR) is usually very low. It is challenging to achieve sub-nanometer surface with high MRR. To overcome this challenge, in this work, different cations are considered to improve the MRR during CMP for silicon (Si) wafer. When the concentration of NH 4 + ions is 125 mmol/L, the MRR of Si wafer reaches 1687 Å/min, increasing 107.8 % compared with the controlled group. It is noted that nanometer silica abrasives remain at a good monodisperse state in CMP. The surface roughness Sa after CMP on a Si wafer is 0.744 nm under a measurement area of 868 × 868 µm 2 . COF data and X-ray photoelectron spectroscopy indicate that NH 4 + ions reduce the electrostatic repulsion between silica nanoparticles and Si, whilst accelerating chemical reactions between Si and developed slurry. This work suggests a novel approach to fabricating sub-nanometer surface of Si wafer with high MRR, which is beneficial for the potential use in semiconductor and microelectronics industries.
研究领域:
材料科学
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半导体技术
✓ 已验证
产品关联
DOI
高影响因子
ECS Journal of Solid State Science and Technology
·
2024
·Vol. 13
·期 12
·124004
·
IF 1.8
Deng Pan,Gaoyuan Ren,Jingwei Zhang,Li Wang,Shudong Wang
Addition of corrosion inhibitor in the slurry during tungsten (W) chemical mechanical planarization (CMP) process is an effective way to avoid excessive corrosion. In this work, three environmentally friendly amino acids (lysine, leucine, and glutamic acid) were chosen as corrosion inhibitor during W CMP process. A smooth wafer surface was obtained after CMP with the addition of lysine. The static etching rate of the W film decreased from 45.9 Å min−1 to 7.1 Å min−1 while an excellent wafer surface roughness (Ra = 1.267 nm) was obtained with the addition of 0.25 mmol l−1 lysine. The results indicate that increasing the amount of protonated amino acid molecules in the slurry can result in the improvement of corrosion inhibition performance as well as decrease the material removal rate. Electrochemical tests indicated that the corrosion inhibition effect can be attributed to the formation of an amino acids adsorption layer on the wafer surface, inhibiting the formation of peroxotungstic acids by the interaction between H2O2 and W film in the concave region. This work provides valuable guidance for the application of environmentally friendly amino acid corrosion inhibitor in the CMP field.
研究领域:
材料科学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF APPLIED ELECTROCHEMISTRY
·
2021
·Vol. 51
·期 5
·803-814
·
IF 2.8
Zhao Ting,Jiang Liang,Liu Jinwei,Wu Hanqiang,Qin Na,Qian Linmao
Potassium persulfate was used as an effective oxidizer for chemical mechanical polishing (CMP) of GCr15 steel. The effects of pH, potassium persulfate content and chelating agents on the CMP performance of GCr15 steel were investigated, and the surface films formed in the potassium persulfate-based slurries were characterized accordingly. It is revealed experimentally that, with pH increasing from 2.0 to 9.0, the material removal rate (MRR) is independent of pH while the surface roughness R a decreases. At pH 8.0, as the potassium persulfate content increases, the MRR linearly increases with a slope of 48 nm min −1 mM −1 , but the surface quality continues to deteriorate accompanied with the black Fe 3 O 4 residue due to the severe corrosion by persulfate. In particular, Fe 2+ and Fe 3+ ions are continuously produced by oxidation of persulfate, and a significant part of Fe 2+ and Fe 3+ further reacts with OH − to form a non-uniform and rough surface film which primarily consists of Fe 3 O 4 . After adding an appropriate chelating agent EDTA, the R a reaches 1.7 nm without any black residue due to the chelation reactions between iron ions and EDTA. The findings suggest that a nano-precision surface finish of bearing steel could be achieved at weakly alkaline pH with persulfate-based slurries. Graphic abstract
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
TRIBOLOGY INTERNATIONAL
·
2024
·
IF 6.1
Changxin Dong,Xinhuan Niu,Chao He,Xinjie Li,Zheng Wu,Jiahui Li,Bin Hu,Yunhui Shi,Jiabao Cheng,Xiaodong Luan
For copper (Cu) interconnection chemical mechanical polishing (CMP) process, the Cu film slurry follows the principles of high efficiency, environmentally friendly and low cost. In this study, hydroxyethylene diphosphonic acid (HEDP), amino-trimethylene phosphonic acid (ATMP) and ethylenediamine etramethylenephosphonic acid (EDTMP) were used as green inhibitors to study the effects of organic compounds rich in two, three and four phosphate functional groups on the corrosion inhibition properties of Cu films. The results indicated that the Cu film material removal rate (MRR) of HEDP reaches 5879 A/min and the surface roughness (Sq) is 0.85 nm, superior to the other two inhibitors. Through mechanical action analysis, electrochemical experiment, UV-Visible, X-ray photoelectron spectroscopy (XPS) test analysis and theoretical calculation, it was observed that three inhibitors could not only form stable complexes with Cu, which have the effect of corrosion inhibition, but also play a lubricating role of surfactant, and simplify the composition of slurry, and the inhibition efficiency order of them is HEDP > ATMP > EDTMP.
研究领域:
材料科学
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电化学
·
理论计算
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）