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PHYSICA B-CONDENSED MATTER · 2022 · IF 2.988

The abnormal improved dielectric in La-doped relaxor ferroelectric PNN-PHT

Shiyi Zhang,Dongyan Zhang,Yangxi Yan,Maolin Zhang,Zhimin Li,Pangpang Wang,Ri-ichi Murakami

Relaxor ferroelectrics are complex materials with properties that are remarkably different from traditional ferroelectrics, and they have the ability to probe frequency-dependent dielectric susceptibility. However, the empirical laws developed for traditional ferroelectrics also apply to relaxor ferroelectrics. Here we report an abnormally improved dielectricity of the La-doped relaxor ferroelectric 0.4PNN-0.6PHT, which does not linearly vary with the piezoelectric coefficient, as it is expected. A mesoscale mechanism is proposed to explain the origin of the improved dielectric response of 0.4PNN-0.6PHT, in which the alignment of polar nano regions facilitates the polarization response to the external field. This mechanism demonstrates the critical role of polarization fluctuation for the macroscopic properties of 0.4PNN-0.6PHT.

研究领域: 材料科学 · 物理学
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2022 ·Vol. 33 ·期 29 ·22899-22912 · IF 2.779

Tailored interface with varied electrical performance in core–shell BaTiO3@C/poly(vinylidene fluoride-chlorotrifluoroethylene) dielectric composite film

Zhang Yinkai,Zhang Xuanhe,Ye Huijian,Xu Lixin

Polymer film capacitor with large power density is potentially embedded in energy suppliers and wearable devices. Currently, the strategy of polymer composite is an effective solution for the enhancement of energy density for dielectric film. Exploring the relation between neighboring interface and polarized response of composite is the primary route for the improvement of energy storage capability in polymer film. In this work, the interface with tailored electrical conductivity has been constructed in carbon-coated BaTiO 3 /poly(vinylidene fluoride-chlorotrifluoroethylene) (BT@C/P(VDF-CTFE)) composite. Core–shell BT@C particles with various calcined crystal structures were synthesized via sol–gel method with following carbonization. The calcination process affects the constitution of graphitic carbon that determines the electrical resistivity of received BT@C particles. The presence of carbon layer on the cubic BT core was evidenced by X-ray photoelectron spectroscopy and transmission electron microscope. BT@C/P(VDF-CTFE) composite with tailored conductive interface was prepared through the solution casting method. The electric displacement of composite is improved due to the interfacial polarization. The electrical resistivity depends on the permeation effect of interfacial carriers, resulting in the decrease of energy efficiency during charge–discharge cycle. The exploration between interface effect and polarization provides insightful prospects on interfacial design of polymer composite for film capacitor.

研究领域: 材料科学 · 电气工程
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ADVANCED MATERIALS · 2024 ·Vol. 36 ·期 35 ·2406625 · IF 27.4

Polymorphic Localized Heterostructure Design for High-Performance Amorphous/Nanocrystalline Composite Film

Rui Huang,Jian Wang,Hongye Wang,Cheng Tao,Hua Hao,Zhonghua Yao,Hanxing Liu,Zhonghui Shen,Minghe Cao

Analogous to linear dielectric, amorphous perovskite dielectrics characterized of high breakdown strength and low remanent polarization possess in-depth application in the sea, land, and air fields. Amorphous engineering is a common approach to balance the inverse relationship between polarization and breakdown strength in dielectric ceramic capacitor, however, the low polarization is the major barrier limiting the improvement of energy storage density. To address this concern, the polymorphic localized heterostructure confirmed by high-resolution transmission electron microscope (HR-TEM) and HADDF images is constructed in BaTiO 3 -Bi(Ni 0.5 Zr 0.5 )O 3 amorphous/nanocrystalline composite film with SiO 2 addition (BT-BNZ-xS, x = 3, 5, 7, 10 mol%). The stability of nanocrystalline region achieved by Si-rich transition region and the enhancive ultra-short-range ordering in the amorphous region synergistically result in large breakdown strength and nonhysteretic polarized response. This polymorphic localized heterostructure optimizes the thermal stability in a wide temperature range and contributes ultrahigh energy storage density of 149.9 J cm −3 with markedly enhanced efficiency of 79.0%. This study provides a universal strategy to design the polarization behavior in other amorphous perovskite-based dielectrics.

研究领域: 材料科学 · 电子工程
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JOURNAL OF APPLIED POLYMER SCIENCE · 2025 · IF 2.8

Increasing the Energy Storage Density of PVDF/BT Nanocomposite Films by the Synergy of Linear Polymer Intercalation in PVDF and Core-Shell Structure on BT Surface

Yu He,Jiacheng Guo,Weihao Zhong,Chuanyezi Cai,Xin Guo,Gengqi Tong,Xi Chen,Shiyu Liu,Lu Ye,Tianren Wei,Jianjun Zhang

This study aims to enhance the energy storage density of polymer dielectric thin films. A linear polymer, polyimide (PI), was blended with polyvinylidene fluoride (PVDF). Subsequently, BaTiO 3 @SiO 2 (BT@SiO 2 ) nanoparticles with high dielectric constant (ε r ) were prepared and incorporated into the blend. PVDF/PI-BT@SiO 2 nanocomposite films were prepared by the spin-coating method, and the relationship between composition and properties was systematically investigated. The charge energy density of the nanocomposite films initially increases and then decreases with increasing BaTiO 3 mass fraction. The maximum energy density reaches 3.78 J/cm 3 in the film containing 30 wt.% BT@SiO 2 , representing improvements of 633% and 540% compared to films with 10 wt.% BT@SiO 2 and 30 wt.% BT, respectively. The breakdown strength reaches 2274 kV/cm. The rigid structure of the PI molecular chains hinders the cooperative switching of PVDF ferroelectric domains and reduces coherent coupling between them. This effect alleviates energy loss during polarization reversal and modulates amorphous polarizability. Additionally, the core-shell structure of the nanoparticles enhances interfacial compatibility. The synergistic effect of PI and BT@SiO 2 enhances the polarization response and dielectric properties of PVDF, resulting in nanocomposite films with excellent energy density and breakdown strength.

CAS / MDL: 24937-79-9 62929-02-6
研究领域: 材料科学 · 高分子科学 · 纳米技术 · 介电材料 · 能量存储
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JACS Au · 2023 · IF 8

Photochromic Single-Component Organic Fulgide Ferroelectric with Photo-Triggered Polarization Response

Ye Du,Chao-Ran Huang,Zhe-Kun Xu,Wei Hu,Peng-Fei Li,Ren-Gen Xiong,Zhong-Xia Wang

Organic photochromic compounds have been widely investigated for optical memory storage and switches. Very recently, we pioneeringly discovered optical control of ferroelectric polarization switching in organic photochromic salicylaldehyde Schiff base and diarylethene derivatives, differently from the traditional ferroelectrics. However, the study of such intriguing photo-triggered ferroelectrics is still in its infancy and relatively scarce. In this manuscript, we synthesized a pair of new organic single-component fulgide isomers, (E and Z)-3-(1-(4-(tert-butyl)phenyl)ethylidene)-4-(propan-2-ylidene)dihydrofuran-2,5-dione (1E and 1Z). They undergo prominent photochromism from yellow to red. Interestingly, only polar 1E has been proven to be ferroelectric, while the centrosymmetric 1Z does not meet the basic requirement for ferroelectricity. Besides, experimental evidence shows that the Z-form can be converted to the E-form by light irradiation. More importantly, the ferroelectric domains of 1E can be manipulated by light in the absence of an electric field, benefiting from the remarkable photoisomerization. 1E also adopts good fatigue resistance to the photocyclization reaction. As far as we know, this is the first example of organic fulgide ferroelectric reported with photo-triggered ferroelectric polarization response. This work has developed a new system for studying photo-triggered ferroelectrics and would also provide an expected perspective on developing ferroelectrics for optical applications in trap future.

研究领域: 材料科学 · 光电学 · 铁电材料 · 光致变色化合物
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Materials Today Physics · 2024 · IF 10

Interfacial Coulomb-enhanced charge injection for efficient perovskite light-emitting diodes

Yongjian Chen,Cheng Yan,Zhenyu Chen,Xiankan Zeng,Qungui Wang,Shiyu Yang,Lunyao Pan,Chenglong Li,Maolin Mu,Wen Li,Guanqi Tang,Weiqing Yang

Unbalanced electron-hole injection in perovskite light-emitting diodes (PeLEDs) has always been a major stumbling block limiting device performance. Here we develop a heterointerface Coulomb enhancement strategy to efficiently promote electron injection between perovskite emitter and transport layer and thereby balance the electron-hole recombination equilibrium through manipulating defect-rich positive-charge centers induced Coulomb interactions in LiF interlayer. Through multiscale polarization response characterizations combined with capacitance-voltage and electrochemical impedance spectroscopy, it is confirmed that diffusing holes trapped in LiF layer leads to the increased interfacial polarization. Moreover, the polarization response reversal and high-frequency-dependent dissipation sensitivity further corroborate the LiF-induced interfacial Coulomb enhancement mechanism. The universality of the concept is also successfully verified in devices with electron-only, hole-only, and PN structures. Consequently, the modified PeLEDs show a lower leakage current, along with a significant performance improvement by 1.9 times in external quantum efficiency (18.8%) and 5.7 times in luminance compared with control samples. This study provides a unique perspective to promote carrier transport balance by taking advantage of physical effects within interlayer.

研究领域: 材料科学 · 光电 · 半导体物理
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