ACS Applied Electronic Materials
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2023
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IF 4.7
Guozhang Ren,Shunhao He,Yulong Zhang,Chengcheng Zhu,Zhongyan Gong,Kaili Wang,Linrong Zhang,Zhuoyao Li,Gang Lu,Hai-Dong Yu
As a next-generation electronic device, the organic electrochemical transistor (OECT) is widely spreading in laboratory research and has many practical applications because of the advantages of its simple structure, low operating voltage, and high biocompatibility. However, the evaluation of the performance of OECTs is generally chaotic since there are many testing methods that may yield different results. Herein, we reveal that the testing protocols may largely affect the obtained results of the same OECT. An increase in the sweeping speed of the gate voltage could lead to a drop in the measured performance of OECTs. When a pulsed voltage was applied on the drain electrode, a degradation in the performance of OECTs could also be observed at a short pulse width. This work clarifies the influence of testing methods on the performance evaluation of OECTs. As a result, the development of the field of the synthesis of OECTs may be significantly promoted.
研究领域:
电子学
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材料科学
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生物医学工程
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产品关联
DOI
高影响因子
ACS Nano
·
2024
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IF 15.8
Wenhao Shi,Xitang Qian,Chuankai Zou,Meng Zhang,Chenhui Huang,Xiangshui Miao,Lei Ye
Ion transport is a critical phenomenon underpinning numerous biological, physical, and chemical systems. Proton transistors leveraging proton transport face significant limitations, such as a low on–off ratio and deficient carrier mobility, which restrict their applicability in biological and other scenarios. This study explores the use of two-dimensional (2D) vacancy-residing transition metal phosphorus trichallcogenide-based membranes as the active layer for proton field-effect transistors. The synthesized Cd0.85PS3Li0.15H0.15 membrane exhibits a well-organized layered structure and high hydrophilicity, with nanometer-sized interlayers containing interconnected water networks. These distinct features facilitate proton conduction, leading to a high proton conductivity value of 0.83 S cm–1 at 98% relative humidity and 90 °C, with an activation energy of 0.26 eV. The Cd0.85PS3Li0.15H0.15-based proton transistor demonstrates tunability via gate voltage, thereby enabling effective modulation of proton flow across source and drain electrodes. The transistor notably showcases superior switching characteristics, with an on/off ratio surpassing 5.51 and a carrier mobility of 8.84 × 10–2 cm2 V–1 s–1. The underlying mechanism for this performance enhancement is attributed to electric-field-induced switching in Cd vacancies. This research boosts the development of highly versatile ionotropic devices by introducing advanced 2D ion-conductive membranes.
研究领域:
材料科学
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电子学
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纳米技术
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质子学
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器件物理
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产品关联
DOI
PubMed
高影响因子
CARBON
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2019
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IF 7.466
Jinwei Wei,Bo Liang,Qingpeng Cao,Hangxu Ren,Youming Zheng,Xuesong Ye
Asymmetric transfer characteristics and hysteresis behaviors are two puzzling electronic transport properties in graphene field effect transistor (GFET). Herein, we presented systematic investigations on these phenomena by varying gate voltage sweeping rates and testing chemical atmospheres. Three different doping mechanisms for GFET were proposed to illustrate these behaviors: electric field doping, molecule chemical doping, and electrochemical doping by redox reactions . In ambient environment, the plateau's emergence in asymmetric transfer curve of GFET was attributed to the counteraction between n-type electric field doping and p-type O 2 /H 2 O electrochemical doping. The hysteresis effect difference in backward sweeping varied as a function of gate voltage sweeping rate, which has been offered a qualitative explanation in the context of thermodynamics and kinetics. In NH 3 , the degree of hysteresis effect in GFET increased with the vapor concentration rising up, while NO 2 atmosphere induced opposite behavior. Generally, the interplay of the three doping mechanisms accounts for the total Fermi level modulation and carrier migration behavior near the Dirac point. For instance, the electrochemical doping could occur spontaneously because the electric effect doping or chemical doping raised the graphene Fermi level high enough with respect to the electrochemical O 2 /H 2 O redox potential.
研究领域:
材料科学
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电气工程
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纳米技术
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
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2023
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IF 9.5
Panpan Hao,Rufeng Zhu,Yang Tao,Wei Jiang,Xue Liu,Yan Tan,Yuedan Wang,Dong Wang
Novel enhancement-mode organic electrochemical transistors (OECTs) have been prepared by poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) de-doped polyethylenimine on the multi-walled carbon nanotube-modified viscose yarn. The fabricated devices exhibit low power consumption with a high transconductance of 6.7 mS, rapid response time < 2 s, and excellent cyclic stability. In addition, the device has washing durability and bending and long-term stability suitable for wearable applications. Biosensors based on enhancement-mode OECTs for the selective detection of adrenaline and uric acid (UA) are developed by using molecularly imprinted polymer (MIP)-functionalized gate electrodes. The detection limits of adrenaline and UA analysis are as low as 1 pM, with the linear ranges of 0.5 pM to 10 μM and 1 pM to 1 mM, respectively. Moreover, the sensor based on enhancement-mode transistors can efficiently amplify the current signals according to the modulation of the gate voltage. The MIP-modified biosensor has high selectivity in the presence of interferents and desirable reproducibility. Additionally, due to the wearable nature of the developed biosensor, this sensing tool has the capability of being integrated with fabrics. Therefore, it has successfully been applied in textiles for the determination of adrenaline and UA in artificial urine samples. The excellent recoveries and rsds are 90.22–109.05% and 3.97–6.94%, respectively. Ultimately, these sensitive, low-power, wearable, and dual-analyte sensors help to develop non-laboratory tools for early disease diagnosis and clinical research.
研究领域:
电化学
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生物传感
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可穿戴技术
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分析化学
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材料科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
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