Zhenzhen Ma,Jiahui Li,Yating Zhang,Hongliang Zhao,Qingyan Li,Chengqi Ma,Jianquan Yao
With extremely high optical absorption coefficient in infrared regime, lead sulfide (PbS) quantum dots (QDs)-based photodetectors are promising for diverse applications. In recent years, synthesis of materials has made great progress, but the problem of low sensitivity of quantum dots photodetector still unresolved. In this work, the introduction of a tunneling organic layer effectively address this problem. The dark current is decreased by the appropriate thickness of polymethyl methacrylate (PMMA) barrier layer by suppressing the spontaneous migration of ions, and the photogenerated carriers are little effected, thereby the responsivity of the device is improved. As a result, the device exhibits a high responsivity of 3.73 × 105 mA W−1 and a giant specific detectivity of 4.01 × 1013 Jones at a low voltage of −1 V under 1064 nm illumination. In the self-powered mode, the responsivity reaches a value of 157.6 mA W−1, and the detectivity up to 5.9 × 1011 Jones. The performance of the photodetectors is obviously better than most of the reported QDs photodetectors. The design of this device structure provides a new solution to the problem of low sensitivity and high leakage current of quantum dots based infrared photodetectors.
The identifying characteristic of an organic electrochemical transistor (OECT) is the coupling between ionic and electronic charges within the entire volume of the channel. In this work, by taking advantage of the volumetric nature of the OECTs’ response, a novel flexible photodetector is reported for the first time based on all-solid-state OECT with an excellent responsivity of up to 6.7 × 106 A/W, detectivity as high as 3.6 × 1013 Jones, and a fast response of ∼0.13 s in the visible range, which are superior to those of the majority of the reported organic phototransistors (OPTs) based on field-effect transistors (FETs) and even better than those of FET-based phototransistors with two-dimensional (MoS2 and graphene) and perovskite materials. The high performance of the devices was ascribed to the combination of the higher carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) as a channel and the volumetric nature of the OECTs’ response, and the charge density of the volumetric channel was efficiently modulated by incident light compared to FETs. Moreover, OECT-based OPTs with quantum dots (CdSe/ZnS) as a light sensitizer were characterized under ultraviolet light, and they exhibited excellent photosensitivity, which further verified the superiority of OECT for phototransistors. Furthermore, a flexible image sensor was fabricated for the first time by integrating flexible OECTs-OPTs into a 10 × 10 array, which can clearly identify the target image under a bending state, indicating the great potential of OECTs-OPTs in the application of low-power, ultrasensitive flexible photodetectors and imaging technology.
Fu Feng,Tao Wang,Jie Qiao,Changjun Min,Xiaocong Yuan,Michael Somekh
Quasi-two-dimensional (2D) layered organic–inorganic hybrid perovskites have attracted extensive attention, owing to their excellent optoelectronic tunability and moisture stability compared with three-dimensional perovskite counterparts and show great potential for application in photodetectors (PDs). However, owing to the unavoidable grain boundary defects of perovskite polycrystalline films, the photocurrent is limited by poor light absorption and charge mobility. Therefore, the preparation of quasi-2D perovskite films with strong light trapping and high charge mobility has been challenging. In this study, novel broadband quasi-2D perovskite (BA)2(FA)n−1PbnI3n+1 hybrid-structure PDs with good stability were fabricated by combining both monolayer graphene and Au square nanoarrays. The hybrid system using both graphene and Au square nanoarrays effectively improved the carrier mobility and light absorption and simultaneously maximized light trapping and light-induced carrier extraction, which resulted in PDs with greatly enhanced photocurrent in the visible and near-infrared range. The graphene–Au array–perovskite-based PDs had a low dark current of 10–10 A, large on/off ratio of 104, high responsivity of 18.71 A W–1, and detectivity of 2.21 × 1013 Jones. The responsivity and detectivity were two orders of magnitude higher than those of PDs based only on perovskites. This work demonstrates a promising and feasible device based on the coupling of a gold array, layered graphene, and quasi-2D perovskites, which shows great potential for the development of high-performance broadband perovskite PDs.
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