ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Zenghui Wu,Guoan Tai,Runsheng Liu,Chuang Hou,Wei Shao,Xinchao Liang,Zitong Wu
The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W–1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.
研究领域:
材料科学
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纳米技术
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光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Optical Materials
·
2025
·
IF 3.8
Xi Ran,Hang Xia,Jing Liu,Mohan Yuan,Xudong Hu,Ya Wang,Xinzheng Lan
Lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors are promising devices for low-cost, high-performance, and large-area infrared imaging. For integration with readout integrated circuits (ROICs), top illumination is urgently required to ensure simultaneous light absorption and signal acquisition. However, the traditional best-performing p-on-n PbS CQD photodetectors rely on opaque top metal contacts, thus limiting the development of top-illuminated imagers. Herein, we addressed this issue by introducing a bifunctional ZnTe layer. The presence of the ZnTe layer─while allowing efficient hole collection─serves as a protective layer for the CQD layer during subsequent transparent electrode deposition. The resultant PbS CQD photodetectors based on the ZnTe layer show a specific detectivity of 2.09 × 1012 Jones at ≈1300 nm, representing approximately a 5-fold improvement over the control device (4.30 × 1011 Jones). This performance is comparable to that of the best PbS CQD photodetectors reported at similar wavelengths. The advantages of this architecture are further demonstrated by building a PbS CQD imager with a pixel array of 256 × 256, verifying the compatibility of photodetectors with ROICs.
研究领域:
光电子学
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纳米技术
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红外成像
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半导体器件
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2023
·
IF 10.9
Chun-Yan Wu,Yu-Xuan Le,Li-Yan Liang,Jing-Yue Li,Feng-Xia Liang,Shi-Rong Chen,Xiao-Ping Yang,Yu-Xue Zhou,Lin-Bao Luo
In this study, we report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using CsPbBr 3 nanosheets synthesized through confined-space growth at room temperature. The peak photoresponse of the device upon illumination blueshifts with decreasing thickness and a 68 nm CsPbBr 3 nanosheet based device displays a peak response to 265 nm illumination, showing responsivity and specific detectivity of 85 mA/W and 4.05 × 10 11 Jones at 3 V bias, respectively. Theoretical simulation reveals that the blueshift is associated with the wavelength-dependent absorption coefficient of CsPbBr 3 nanosheet: incident light with shorter wavelengths can be absorbed on the superficial surface, while long-wavelength light has a larger penetration depth, leading to dominant DUV absorption in thinner CsPbBr 3 nanosheet. This work will shed light on the facile and cost-effective fabrication of DUV photodetectors from non-ultrawide bandgap (UWBG) all-inorganic perovskite materials.
研究领域:
材料科学
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光子学
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纳米技术
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半导体物理
✓ 已验证
DOI
高影响因子
NANOTECHNOLOGY
·
2023
·Vol. 34
·期 14
·145402
·
IF 3.5
Hong-Xiang An,Bao-Shi Qiao,Zhi-Hong Zhang,Zhen-Dong Lian,Zhipeng Wei,Xiao-Shuang Li,Qing-Guang Zeng,Bo Wang,Kar Wei Ng,Shuang-Peng Wang
Copper-based halide perovskites have shown great potential in lighting and photodetection due to their excellent photoelectric properties, good stability and lead-free nature. However, as an important piece of copper-based perovskites, the synthesis and application of RbCu2I3 have never been reported. Here, we demonstrate the synthesis of high-quality RbCu2I3 microwires (MWs) by a fast-cooling hot saturated solution method. The prepared MWs exhibit an orthorhombic structure with a smooth surface. Optical measurements show the RbCu2I3 MWs have a sharp ultraviolet absorption edge with 3.63 eV optical band gap and ultra-large stokes shift (300 nm) in photoluminescence. The subsequent photodetector based on a single RbCu2I3 MW shows excellent ultraviolet detection performance. Under the 340 nm illumination, the device shows a specific detectivity of 5.0 × 109 Jones and a responsivity of 380 mA·W−1. The synthesis method and physical properties of RbCu2I3 could be a guide to the future optoelectronic application of the new material.
研究领域:
材料科学
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光电子学
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半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2024
·
IF 5.7
Zhiping Liang,Run Hao,Hualong Luo,Zhenming He,Liumei Su,Xing Fan
Layered SnSe in nanostructures has recently attracted growing interest in photonics, optoelectronics, photocatalysis, energy storage, and biomedicine because of its suitable band gap, excellent light absorption capacity, and considerable carrier mobility. However, the applications of SnSe in high-performance photoelectrochemical (PEC) devices are greatly hindered due to high-density defects, which lead to its high recombination of charge carriers and environmental instability. In this contribution, we have adopted a doping strategy to enhance the photo-response properties of a SnSe-based PEC photodetector. The as-prepared Ga-doped SnSe nanostructure shows a remarkable increase in photocurrent density, stable on–off cyclicity, fast photo-response behavior, and higher specific detectivity compared to the pristine SnSe. Based on structure characterization, composition analysis, and DFT calculations, the substitution of Sn by Ga in the lattice gives rise to changes in the electronic structure and optical absorption, endowing Ga-doped SnSe with a metal-like feature. Such a doping strategy can provide fundamental support in the development of SnSe-based devices and pave the way for PEC applications.
研究领域:
光子学
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光电学
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光催化
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能量存储
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生物医学
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2025
·Vol. 13
·期 28
·e00362
·
IF 7.2
Wei Fu,Zelong Li,Yifan Ding,Maojie Zhang,Yong Cui,Hong Zhang,Xiaoliang Mo,Rongjun Zhang,Guangzheng Zuo
This study addresses the challenges of high dark current density and low responsivity in near-infrared organic photodetectors (NIR-OPDs) through a synergistic strategy combining morphology control and interface engineering. A thick active layer incorporating solid additives effectively reduces the dark current density while preserving efficient charge transport. Subsequently, molecular interface modification using [2-(9HCarbazol-9-yl)ethyl]phosphonic acid (2PACz) further suppresses the dark current and enhances photoresponsivity. Drift-diffusion modeling, incorporating trap states, reveals that the 2PACz forms a dipole layer at the interface, lowering the injection barrier by ≈0.3 eV and eliminating traps within the device. Together, these strategies reduce the dark current density from the order of 10 −5 A cm −2 (control) to the order of 10 −8 A cm −2 at −1 V, and enhance the responsivity ( R ) from 0.50 A W −1 (control) to 0.58 A W −1 at 864 nm. The resulting device exhibits a high shot-noise-limited specific detectivity ( D sℎ ∗ ) reaching 9.57 × 10 13 Jones, highlighting its exceptional sensitivity. This study demonstrates that combining morphology control with interface engineering effectively overcomes key performance limitations in NIR-OPDs, providing valuable insights for the design of high-performance organic photodetectors.
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2022
·
IF 4.494
Jing Li,Yinlu Gao,Xinglai Zhang,Lixin Chen,Yonghui Ma,Liu Yang,Qing Liu,Xue Jiang,Baodan Liu
The phase transformation threshold and mechanism of layered GaTe1–xSex crystals have been controversial for a long time. Herein, we demonstrate that an extremely low Se content of 20% can induce the phase transformation of GaTe1–xSex from monoclinic structure to hexagonal structure. Theoretical and experimental studies reveal that the introducing of Se dopants effectively stabilizes the host lattice of metastable h-GaTe and thus induces the transformation of GaTe1–xSex from monoclinic to hexagonal lattice in the low Se doping range. The obtained GaTe1–xSex crystals also display tunable band gaps from 1.65 to 1. 85 eV and near band edge emission from 755 to 675 nm with increasing Se content from x = 0 to x = 0.44. More importantly, in comparison with GaTe and GaSe, layered GaTe1–xSex nanosheets exhibit p-type conductivity, higher carrier concentration, excellent photoresponse, and air stability. The fabricated GaTe1–xSex nanosheet photodetectors also show outstanding performance in the UV and visible range including a high responsivity of 91.3 A/W, an excellent EQE of 3.16 × 104%, and a specific detectivity of 5.05 × 109 Jones.
研究领域:
材料科学
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光电子学
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纳米技术
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半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2023
·
IF 29.4
Kseniia A. Sergeeva,Sile Hu,Anastasiia V. Sokolova,Arsenii S. Portniagin,Desui Chen,Stephen V. Kershaw,Andrey L. Rogach
A large volume, scalable synthesis procedure of HgTe quantum dots (QDs) capped initially with short-chain conductive ligands ensures ligand exchange-free and simple device fabrication. An effective n- or p-type self-doping of HgTe QDs is achieved by varying cation–anion ratio, as well as shifting the Fermi level position by introducing single- or double-cyclic thiol ligands, that is, 2-furanmethanethiol (FMT) or 2,5-dimercapto-3,4-thiadiasole (DMTD) in the synthesis. This allows for preserving the intact surface of the HgTe QDs, thus ensuring a one order of magnitude reduced surface trap density compared with HgTe subjected to solid-state ligand exchange. The charge carrier diffusion length can be extended from 50 to 90 nm when the device active area consists of a bi-layer of cation-rich HgTe QDs capped with DMTD and FMT, respectively. As a result, the responsivity under 1340 nm illumination is boosted to 1 AW −1 at zero bias and up to 40 AW −1 under −1 V bias at room temperature. Due to high noise current density, the specific detectivity of these photodetectors reaches up to 10 10 Jones at room temperature and under an inert atmosphere. Meanwhile, high photoconductive gain ensures a rise in the external quantum efficiency of up to 1000% under reverse bias.
研究领域:
材料科学
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纳米技术
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光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2025
·Vol. 13
·期 14
·2403448
·
IF 7.2
Yanjun Duan,Mingxin Hu,Shengren Li,Wenxin Dong,Wei Dang,Lin Yang,Yingnan Guo,Zhiqiang Li
Short-wave infrared (SWIR) detectors are becoming increasingly vital in areas such as autonomous driving, food inspection, medical diagnostics, and scientific exploration. Recently, Te x Se 1–x has exhibited exceptional promise for infrared photodetection. However, Te x Se 1–x -based devices still struggle with excessively high dark current and subpar performance. This work presents an interface engineering via selenization in the SnO x /Te 0.73 Se 0.27 heterojunction SWIR photodetector. The post-selenization modifies the surface properties of SnO x , reduced the interface defect density, and enlarged the built-in potential in the junction. Moreover, this interface engineering leads to improved band alignment, facilitating charge transport and collection. As a result, the improved device achieves a reduced dark current density from 1.6 × 10 −6 A cm −2 to 1.4 × 10 −7 A cm −2 at zero bias voltage. The device exhibits a broad-spectrum response ranging from 300 to 1700 nm, with a room-temperature responsivity of 0.33 A W −1 at 980 nm, a specific detectivity of 6.61 × 10 10 Jones, a -3 dB bandwidth of 120 kHz, and a linear dynamic range of 110 dB. Moreover, its applications in the short-wave infrared single-pixel imaging is demonstrated.
研究领域:
光电子学
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红外光电探测
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材料科学
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半导体器件
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Jianhua Xiao,Yang Wang,Huiling Tai,Yadong Jiang,Lijun Tang
The solution-processing technology of organic photodiodes (OPDs) stands as a core advantage distinguishing them from conventional silicon-based devices, offering several design opportunities for macroscopic structural innovations such as special-shaped, large-area, and flexible architectures. The anode interface layer (AIL), an indispensable component in OPD, is highly desired for processing techniques and physicochemical compatibility to meet the demands of high-performance devices. However, viable alternatives to the commercial material PEDOT:PSS remain scarce, with the narrow selection pool of solution-processed AIL materials. Here, a novel solution-processed organic–inorganic hybrid AIL (D149:Cu) is developed with tunable physicochemical properties, which combines the stability/high carrier mobility of inorganic components with the biocompatibility/flexibility of organic counterparts. The D149:Cu layer optimizes interfacial contact and energy level alignment, effectively enhancing photo-generated hole transport while suppressing dark-state electron injection from external circuit, thereby enabling OPDs with lower dark current (4.96 × 10 −9 vs 1.19 × 10 −7 A cm −2 ) and higher specific detectivity (9.09 × 10 12 vs 1.62 × 10 12 Jones) compared to PEDOT:PSS counterparts. Moreover, flexible D149:Cu-based OPD (≈51 µm-thick) is demonstrated, showing exceptional operational stability under mechanical flexing of 1500 bending cycles. This work alleviates the selection limitations of AILs in optoelectronic devices.
研究领域:
材料科学
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光电子学
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纳米技术
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电子器件
·
高分子科学
✓ 已验证
产品关联
DOI
高影响因子
Light-Science & Applications
·
2025
·Vol. 14
·期 1
·1-13
·
IF 23.4
Yang Zhichun,Liu Jingjing,Bao Haotian,Liu Zonghao,Wang Zaiwei,Li Xiangdong,Chen Zhihao,Zhang Guofeng,Chen Ruiyun,Hu Jianyong,Han Shuangping,Chen Wei,Qin Chengbing,Xiao Liantuan,Jia Suotang
The fast crystallization and facile oxidation of Sn 2+ of tin-lead (Sn-Pb) perovskites are the biggest challenges for their applications in high-performance near-infrared (NIR) photodetectors and imagers. Here, we introduce a multifunctional diphenyl sulfoxide (DPSO) molecule into perovskite precursor ink to response these issues by revealing its strong binding interactions with the precursor species. The regulated perovskite film exhibits a dense morphology, reduced defect density and prolonged carrier diffusion length. The manufactured self-powered photodetector realizes a spectral response of 300-1100 nm, dark current density of 4.7 × 10 −8 mA cm −2 , peak responsivity of 0.49 A W −1 and specific detectivity of 1.20 × 10 12 Jones in NIR region (780–1100 nm), –3 dB bandwidth of 11.4 MHz, linear dynamic range of 174 dB, and ultrafast rise/fall time of 14.2/17.1 ns, respectively. We demonstrate a 64 × 64 NIR imager with an impressive spatial resolution of 1.32 lp mm −1 by monolithically integrating the photodetector with a commercial thin-film transistor readout circuit.
研究领域:
材料科学
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光电子学
·
半导体器件
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纳米技术
·
应用物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
OPTICAL MATERIALS
·
2023
·
IF 3.9
Yuexu Xiong,Taihong Chen,Wenlin Feng
The thickness and area of WS 2 are critical for the optoelectronic response and bandgap. It is necessary to develop a large-area WS 2 with an adjustable bandgap to obtain a high-performance optoelectronic device. In this work, large-area continuous WS (2-2x) Se 2x ( x = 0, 0.265, 0.39, 0.55) thin films were synthesized by the chemical vapor deposition . The bandgap range was adjusted by controlling the selenization time. Furthermore, the photodetectors Ag/WS (2-2x) Se 2x /Ag with different Se compositions were explored. And a high-performance photodetector Ag/WS 0.9 Se 1.1 /Ag was constructed with a wide detection range of ultraviolet–visible–near infrared band. The responsivity, specific detection, and on/off ratio are 1.5 A/W,1.20 × 10 11 Jones, and 2.9 × 10 5 at 365 nm, and the response time is 1.92 μs. This work provided a new synthetic method for growing bandgap-tunable transition metal disulfide and a new option for photoelectric detection in the ultraviolet–visible–near infrared region.
研究领域:
材料科学
·
光电技术
·
纳米技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）