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Results in Physics · 2023 · IF 5.3

Synthesis of uniform two-dimensional non-layered α-MnSe by molecular sieves modified chemical vapor deposition

Meijie Zhu,Hua Xu,Zuoquan Tan,Le Wang

Large-area and uniform two-dimensional (2D) non-layered α-MnSe was successfully synthesized via the molecular sieve modified chemical vapor deposition (CVD). The molecular sieve serves both as a filter and a container to controllable release the Mn precursor in a stable and much lower concentration, leading to the uniform growth of 2D α-MnSe flakes. The thickness, crystalline quality and uniformity of the as-grown α-MnSe are further characterized. Our study validated the positive role of molecular sieve in the controllable growth of 2D α-MnSe, which is believed to be applicable to other non-layered transition metal chalcogenides (TMCs) and will be beneficial for their further applications in electronics, optoelectronics and spintronics.

研究领域: 材料科学 · 纳米科技 · 凝聚态物理 · 无机化学
✓ 已验证 DOI 高影响因子
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CHINESE CHEMICAL LETTERS · 2019 ·Vol. 31 ·期 8 ·2099-2102 · IF 3.839

Preparation of two-dimensional molybdenum disulfide for NO2 detection at room temperature

Xin Yu,Ding Wang,Yuqiu Wang,Ji Yan,Xianying Wang

In this work, the two-dimensional MoS 2 film was prepared by sulfuring the molybdenum atomic layer on SiO 2 /Si substrate. The reaction temperature, heating rate, holding time and carrier gas flow rate were investigated comprehensively. The quality of MoS 2 film was characterized by optical microscopy, atomic force microscopy, Raman and photoluminescence spectroscopy. The characterization results showed that the optimum synthesis parameters were heating rate of 25 °C/min, reaction temperature of 750 °C, holding time of 30 min and carrier gas velocity of 100 sccm. The MoS 2 gas sensor was fabricated and its gas sensing performance was tested. The test results indicated that the sensor had a good response to both reducing gas (NH 3 ) and oxidizing gas (NO 2 ) at room temperature. The sensitivity to 100 ppm of NO 2 was 31.3%, and the response/recovery times were 4 s and 5 s, respectively. In addition, the limit of detection could be as low as 1 ppm. This work helps us to develop low power and integrable room temperature NO 2 sensors.

研究领域: 材料科学 · 纳米科技 · 传感器技术 · 环境监测 · 半导体物理
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JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY · 2017 ·Vol. 33 ·期 8 ·850-855 · IF 2.764

Control of ZnO nanowire growth and optical properties in a vapor deposition process

Nannan Bi,Lei Zhang,Qiang Zheng,Fei Zhuge,Jiupeng Li,Xuan P.A. Gao,Juan Du

A vapor deposition method was applied to synthesize zinc oxide (ZnO) nanowires and nanorods with diameter from 40   nm to 500   nm, length from 1   μm to 70   μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM) proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods , which grow along the <0001> direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures . The ZnO nanowires with small diameters tend to show stronger ultraviolet (UV) light emission from the electron-hole recombination near band edge in photoluminescence (PL), while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.

研究领域: 材料科学 · 纳米技术 · 半导体物理 · 光电子学 · 功能材料
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APPLIED SURFACE SCIENCE · 2019 · IF 5.155

Scalable synthesis and defect modulation of large monolayer WS2 via annealing in H2S atmosphere/thiol treatment to enhance photoluminescence

Yao Zhu,Huan Yi,Qiaoyan Hao,Jidong Liu,Yuxuan Ke,Zhuo Wang,Dianyuan Fan,Wen jing Zhang

Monolayer WS 2 (1L-WS 2 ) possesses direct band gap, which is beneficial for light emitting applications. However, high quality sample obtained via mechanical exfoliation suffers from ultralow yield of large flakes while large 2D material monolayers synthesized by chemical vapour deposition (CVD) unintentionally induce many defects, resulting in low photoluminescence (PL) intensity. Herein, we firstly control the 1L-WS 2 scalable growth through H 2 introduction at the beginning of the CVD synthesis. Its domain size can be increased from 1 μm up to 20 μm with higher coverage, compared to that synthesized without H 2 introduction. Then, we propose scalable ways to anneal the obtained large 1L-WS 2 in Ar diluted hydrogen sulfide (H 2 S) atmosphere at 750 °C or to treat it with (3-mercaptopropyl) trimethoxysilane (MPS). Its PL intensity can be increased to 12 times by H 2 S or more interestingly to 30 times by MPS, respectively. Our systematic analyses show that the drastic PL improvements are mainly attributed to the reduction of structural defects by H 2 S and MPS, which is facilitated via the H– bond in them. The results help to explore routes to obtaining large-size single crystalline transition metal dichalcogenides monolayer (1L-TMDCs) and intense PL emission.

研究领域: 材料科学 · 纳米科技 · 凝聚态物理 · 表面科学 · 半导体材料
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2019 ·Vol. 30 ·期 18 ·17440-17446 · IF 2.195

One-step fabrication of InxGa1−xSb nanowires by vapor transport method

Wang Tianxiong,Meng Xianquan

We try to synthesize In x Ga 1−x Sb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.

研究领域: 材料科学 · 纳米科技 · 半导体物理 · 固体电子学 · 晶体生长
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CHINESE JOURNAL OF CATALYSIS · 2013 ·Vol. 34 ·期 12 ·2161-2166 · IF 1.304

Palladium supported on an ion exchange resin for the Suzuki-Miyaura reaction

Mingming Zhang,Manman Jiang,Changhai Liang

A basic anion exchange resin , Amberlite IRA-900, was loaded with Pd(C 3 H 5 )(C 5 H 5 ) by an easy metal-organic chemical vapor deposition (MOCVD) approach to give Pd@IRA-900 catalyst after reduction at room temperature . Ultraviolet-Visible spectroscopy results showed a red shift of the absorption peak of Pd 2+ after the Pd precursor was loaded on the resin, indicating that a chemical reaction occurred between the precursor and the support. Pd nanoparticles with 2.6 nm of average size were well dispersed on the support. The Pd@IRA-900 catalyst showed high activity for different kinds of aryl halides in Suzuki-Miyaura coupling reactions under mild and aerobic conditions. Excellent recyclability of Pd@IRA-900 catalyst was also observed in the Suzuki-Miyaura coupling reaction of iodobenzene and phenylboronic acid . A bifunctional catalyst Pd@IRA-900(OH) was synthesized by pretreating the ion exchange resin support with NaOH before Pd loading, which successfully catalyzed the Suzuki-Miyaura reaction of iodobenzene and phenylboronic acid without base under aerobic conditions.

研究领域: 催化化学 · 有机合成 · 材料化学 · 绿色化学 · 纳米催化
✓ 已验证 DOI 高影响因子
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CERAMICS INTERNATIONAL · 2024 ·Vol. 51 ·期 5 ·6587-6598 · IF 5.1

Preparation and ablation performance of (ZrC/SiC)35 multilayer alternating coating with sub-micro sublayers thickness

Bo Li,Yigao Chen,Shaopeng Wang

A (ZrC/SiC) 35 multilayer alternating coating with 500∼700 nm sublayers thickness and 70 interfaces was deposited on sharp leading edge C/C composites by continuous CVD method. Its mechanical property and ablation resistance were assessed by scratch test and oxy-acetylene flame respectively and compared with ZrC monolayered coating. The (ZrC/SiC) 35 multilayer alternating coating exhibited a high bonding strength via the regulation of sub-micro alternating stress field and the inhibition of crack propagation by 70 interfaces, showing a high critical load L C3 of 22.521 N, which was higher than that of ZrC monolayered coating of 5.688 N. Furthermore, the coating revealed excellent ablation resistance evidenced by its intact oxide layer, and the mass and linear ablation rates were only 0.17 mg/s and 0.87 μm/s respectively. The layer-by-layer oxidation behavior allowed the advantages of ZrC and SiC sublayers to be fully utilized, thus maintaining the layered oxide structure. Furthermore, the total 35 layers of thin ZrO 2 layers improved the fault tolerance ability of coating in harsh ablative environments.

研究领域: 材料科学 · 表面工程 · 高温防护涂层 · 复合材料 · 力学性能 · 热防护系统
✓ 已验证 DOI 高影响因子
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2016 ·Vol. 27 ·期 7 ·7265-7273 · IF 1.798

In situ etching of graphene by nonmetallic SiOx nanoparticles

Zhang Dongjiu,Cheng Haifeng,Zhang Zhaoyang,Kang Yue

This paper introduced a general method of etching suspended graphene by nonmetallic SiO x nanoparticles (SiO x NPs) in graphene synthesis. Effects of etching time, concentration of silica gel and type of graphene on the etching mode of graphene have been systematically considered with using as-grown graphene film on a silica gel coating copper as model system. Nonmetallic SiO x NPs acted as etchant plays important role in the in situ etching process during the fabrication of graphene. The etched multilayer graphene pattern can be modulated from large area films to a rectangle pattern by varying the Si concentration and etching time, while single layer graphene pattern alters little. The morphology and critical structure of SiO x etched graphene were characterized by Raman spectra, transmission electron microscopy, scanning electron microscope and X-ray photoelectron spectrum. The process and mechanism described here open the way for tailoring graphene via nanoparticles instead of metal, which show significant influence of the electrical properties of graphene.

研究领域: 纳米材料学 · 表面科学 · 凝聚态物理 · 材料化学 · 电子显微学
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Advanced Electronic Materials · 2018 ·Vol. 4 ·期 7 ·1800154 · IF 5.466

Synthesis of Submillimeter-Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near-Infrared Photodetectors with Ultrahigh Responsivity

Qiu Li,Aixiang Wei,Jianting Lu,Lili Tao,Yibin Yang,Dongxiang Luo,Jun Liu,Ye Xiao,Yu Zhao,Jingbo Li

Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal SnS nanoplate a promising candidate for future application in optoelectronics.

研究领域: 材料科学 · 纳米科技 · 半导体物理 · 光电子学 · 凝聚态物理
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CHEMICAL ENGINEERING JOURNAL · 2020 · IF 10.652

Lasing operation in the CsPbBr3 perovskite micron hemisphere cavity grown by chemical vapor deposition

Hanbing Zhang,Chunhu Zhao,Shengjie Chen,Jiao Tian,Jiyu Yan,Guoen Weng,Xiaobo Hu,Jiahua Tao,Yanlin Pan,Shaoqiang Chen,Hidefumi Akiyama,Junhao Chu

Obtaining whispering gallery mode (WGM) lasing with prominent stability and high quality optical cavities is extremely desirable but still a great challenge. Despite the recent surge of reports on microspheres, nanowires and nanoplatelets metal halide crystals, there has few reports on the morphology of Hemispheres (HSs) in the form of uniform, component-tunable microcrystals. Here, CsPbX 3 (X = Cl/Br) HSs with smooth surface and regular geometry structure were synthesized on silicon substrates by chemical vapor deposition (CVD) method, and the wavelength of laser can be continuously tuned from blue to green (450–540 nm) at room temperature by varying the halide composition. WGM laser with polarization ratio of 0.70 and cavity quality factor Q of 2485 were realized in the CsPbBr 3 HS cavity. Besides, the crystal cavity suggested a high photonic and thermal stability for the superb capability of continuous stable lasing output under ambient conditions. All these results illustrate that the synthesis of cesium lead halide perovskite HSs may provide an alternative solution for fundamental researches and applications in optical devices.

研究领域: 光学材料 · 凝聚态物理 · 纳米光子学 · 半导体激光 · 功能晶体
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Nano Energy · 2019 · IF 15.548

Elevated polysulfide regulation by an ultralight all-CVD-built ReS2@N-Doped graphene heterostructure interlayer for lithium–sulfur batteries

Nan Wei,Jingsheng Cai,Ruochen Wang,Menglei Wang,Wei Lv,Haina Ci,Jingyu Sun,Zhongfan Liu

Lithium–sulfur battery is amongst the most promising next-generation energy storage technology owing to their high theoretical capacity and energy density . Nevertheless, the notorious shuttle effect of lithium polysulfides (LiPSs) seriously impedes its practical applications. Here, we report an all-CVD approach to realize the direct growth of ReS 2 @N-doped graphene (NG) heterostructure , which serves as an ultralight high-performance interlayer for elevated LiPS regulation via easy transfer onto the commercial separator. In contrast to the traditional interlayers constructed via vacuum filtration of nanostructured materials that inevitably increase the thickness and weight of the separator, our all-CVD-enabled ReS 2 @NG film possesses an area of 15 mm × 100 mm, a thickness of ~0.5 μm and a negligible areal weight of 80–90 μg cm −2 . Benefiting from the two-dimensional (2D) vertically-erected nanostructure , adsorptive ReS 2 -conductive NG interface, and favorable electrical conductivity , thus-derived ReS 2 @NG interlayer readily enhances reaction kinetics for LiPS conversion and boosts the reutilization of trapped LiPS whilst guaranteeing smooth transportation of lithium ions . Accordingly, an initial discharge capacity of 854 mAh g −1 with an average capacity decay of 0.064% per cycle after 800 cycles can be harvested at 2.0 C. Even at a high sulfur loading of 6.4 mg cm −2 , an initial areal capacity of 6.1 mAh cm −2 can be gained, which still retains 5.8 mAh cm −2 after 40 cycles at 0.1 C. This work is anticipated to shed light upon the construction of CVD-enabled versatile 2D heterostructures for enriching the interlayer design with multifunctionality and cost-effectiveness.

研究领域: 材料科学 · 电化学 · 能源存储 · 纳米材料 · 界面工程 · 电池技术
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MATERIALS RESEARCH BULLETIN · 2012 ·Vol. 47 ·期 11 ·3277-3282 · IF 2.105

High-yield synthesis of SnO2 nanobelts by water-assisted chemical vapor deposition for sensor applications

Jing Bo Zhang,Xiao Ning Li,Shou Li Bai,Rui Xian Luo,Ai Fan Chen,Yuan Lin

Well-crystallized one-dimensional (1D) SnO 2 nanobelts were in situ prepared using a simple water-assisted chemical vapor deposition (CVD) method. The small Sn particles with Au-modifications were used as source materials instead of big size Sn grains to ensure the high yield of SnO 2 belts. The Au layer was modified on the small Sn particles by treating Sn powders in HAuCl 4 solution combined with the UV irradiation. The as-prepared SnO 2 nanobelts were characterized by SEM, HRTEM, XRD, EDS and XPS. These results indicate that the growth temperature plays an important role in controlling the length-to-width ratio of nanobelts. The length-to-width ratio decreases with the growth temperature from 850   °C to 1000   °C. The nanobelts prepared at 850   °C shows a single-crystalline tetragonal rutile phase with a high length-to-width ratio (approximately tens of microns in length and 40–70   nm in width). However, below 850   °C, nanobelts cannot be formed. The as-prepared nanobelts exhibited excellent sensing properties compared with SnO 2 nanoparticles and high sensing selectivity towards NO 2 . The high sensing selectivity to NO 2 is attributed to the oxygen vacancies presenting in the as-prepared nanobelts.

研究领域: 材料科学 · 纳米技术 · 传感器学 · 无机化学 · 半导体材料
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