Interlayered thin-film nanocomposite (TFNi) membranes have been shown to achieve enhanced water permeance as a result of the gutter effect. Nevertheless, some studies report impaired separation performance after the inclusion of an interlayer. In this study, we resolve the competing mechanisms of water transport in the transverse direction vs that in the normal direction. To enable easy comparison, carbon nanotube (CNT)-incorporated TFNi membranes with an identical polyamide rejection layer but different interlayer thicknesses were investigated. While increasing the thickness of the CNT interlayer facilitates water transport in the transverse direction (therefore improving the gutter effect), it simultaneously increases its hydraulic resistance in the normal direction. An optimal water permeance of 13.0 ± 0.7 L m–2 h–1 bar–1, which was more than doubled over the control membrane of 6.1 ± 0.7 L m–2 h–1 bar–1, was realized at a moderate interlayer thickness, resulting from the trade-off between these two competing mechanisms. In this study, we demonstrate reduced membrane fouling and improved fouling reversibility for a TFNi membrane over its control without an interlayer, which can be attributed to its more uniform water flux distribution. The fundamental mechanisms revealed in this study lay a solid foundation for the future development of TFNi membranes toward enhanced separation properties and antifouling ability.
Downsizing silicon-based transistors can result in lower power consumption, faster speeds, and greater computational capacity, although it is accompanied by the appearance of short-channel effects. The integration of high-mobility 2D semiconductor channels with ultrathin high dielectric constant (high- κ ) dielectric in transistors is expected to suppress the effect. Nevertheless, the absence of a high- κ dielectric layer featuring an atomically smooth surface devoid of dangling bonds poses a significant obstacle in the advancement of 2D electronics. Here, ultrathin van der Waals (vdW) lanthanum oxychloride (LaOCl) dielectrics are successfully synthesized by precisely controlling the growth kinetics. These dielectrics demonstrate an impressive high- κ value of 10.8 and exhibit a remarkable breakdown field strength ( E bd ) exceeding 10 MV cm −1 . Remarkably, the conventional molybdenum disulfide (MoS 2 ) field-effect transistor (FET) featuring a dielectric made of LaOCl showcases an almost negligible hysteresis when compared to FETs employing alternative gate dielectrics. This can be attributed to the flawlessly formed vdW interface and excellent compatibility established between LaOCl and MoS 2 . These findings will motivate the further exploration of rare-earth oxychlorides and the development of more-than-Moore nanoelectronic devices.
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