JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 6
·5771-5779
·
IF 2.195
Liu Heng,Zheng Shuaizhi,Chen Qiang,Zeng Binjian,Jiang Jie,Peng Qiangxiang,Liao Min,Zhou Yichun
HfO 2 thin films with different praseodymium doping contents (Pr:HfO 2 ) were fabricated by chemical solution deposition (CSD) method at ambient conditions. The chemical bonding and the composition of Pr doped HfO 2 thin film were characterized by X-ray photoelectron spectroscopy (XPS), while the structural properties were investigated by glancing incidence X-ray diffraction (GIXRD) and high resolution transmission electron microscopy (HRTEM). It is found that the ferroelectric orthorhombic phase was induced in the HfO 2 based thin films by Pr doping. The combined results of P–E (polarization–electrical field) and C–V (capacitance–voltage) measurements demonstrated that the 5 mol% Pr doped HfO 2 film exhibited a distinct ferroelectricity, with a maximum remanent polarization ( P r ) of 6.9 µC/cm 2 and a coercive field ( E c ) of 1.2 MV/cm. Notably, the polarization did not show obvious degradation over 1 × 10 8 switching cycles, suggesting good endurance performance of the Pr doped HfO 2 thin film. These results indicate that Pr dopant could effectively induce ferroelectricity in HfO 2 thin films, thereby becoming a new member of dopants for HfO 2 based ferroelectrics.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2022
·Vol. 10
·期 23
·12632-12642
·
IF 14.511
Liang Shu,Xin Zhang,Wei Li,Jing Gao,Hongliang Wang,Yu Huang,Yue-Yu-Shan Cheng,Qian Li,Lisha Liu,Jing-Feng Li
AgNbO3-based antiferroelectric films have attracted emerging attention in the field of dielectric energy storage and possess promising applications in photocatalysis and microwave devices. Unfortunately, it remains a challenge to fabricate pure-phase AgNbO3 films on Si substrates, precluding their further integration into electronic devices. Here, we, for the first time, report phase-pure AgNbO3 films on Pt/Ti/SiO2/Si substrates by a chemical solution deposition (CSD) method. A facile CSD route without using the hazardous pyridine additive is demonstrated to obtain a stable AgNbO3 precursor for spin-coating films. By comprehensively controlling the heat treatment conditions, secondary phases are eliminated in the deposited films. The phase transitions of the AgNbO3 films are also investigated, where intriguingly the room temperature phase is determined to be the antiferroelectric M2 phase, rather than the commonly reported M1 phase in bulk AgNbO3. Meanwhile, the relative dielectric permittivity surpasses 300 at room temperature and maintains at ∼400 with low dielectric loss (<0.05; measured at frequencies of 0.1–1 MHz) over a wide temperature range of 150–350 °C, within a 5% variation. This work provides an easy-to-implement process of AgNbO3 films which may attract scientific interests and potential applications.
研究领域:
材料科学
·
电子工程
·
能源存储
✓ 已验证
DOI
高影响因子
THIN SOLID FILMS
·
2013
·
IF 1.604
Shufang Wang,Shanshan Chen,Guoying Yan,Fuqiang Liu,Shouyu Dai,Jianglong Wang,Wei Yu,Guangsheng Fu
c-axis oriented nanocrystalline Bi 2 Sr 2 Co 2 O y thin films with the average grain size of 25 nm have been achieved by chemical solution deposition combined with a rapid annealing process in oxygen. The resistivity and Seebeck coefficient of the nanostructured films are about 7.0 mΩ·cm and 171 μV/K at 873 K, resulting in a power factor 2–3 times larger than that of the best reported value in the coarse-grained Bi 2 Sr 2 Co 2 O y polycrystalline bulks. Since the thermal conductivity can be greatly reduced due to the increased phonon scattering at the grain boundaries of nanocrystalline films as well as at film surface and at film/substrate interface, great improvements in the ZT are expected in the nanocrystalline Bi 2 Sr 2 Co 2 O y thin films .
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
✓ 已验证
DOI
高影响因子
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS
·
2025
·
IF 1
Mingyuan Zhao,Bowan Tao,Ruipeng Zhao,Xi Chen,Zhenzhe Li,Tian Xie,Qichen Wang,Silong Fang,Ziwen Jin,Yudong Xia
The widespread application of second-generation high-temperature superconducting (2G HTS) tapes has elevated demand for surface smoothing of long-length Hastelloy tapes utilizing simple and low-cost strategies. Amorphous Y 2 O 3 has been used to flatten the long-length Hastelloy tape surfaces via solution deposition planarization (SDP). In this work, the autonomously designed SDP system is applied to flatten the Hastelloy surface while significantly increasing progress rate. As a result, lifting speed up to 75 m/h, while the root mean square (RMS) roughness on Hastelloy tape surfaces was reduced from 28.13 nm to 0.76 nm over 5 × 5 μm² areas. These are superior to those of the state-of-the-art SDP lifting speeds. Additionally, the surface flattening process was elaborated through power spectral density (PSD). The Hastelloy tape surfaces have been confirmed to form a well-biaxially textured MgO buffer layer. The autonomously designed SDP system shed light on an effective strategy for flattening long-length Hastelloy tape surfaces.
研究领域:
材料科学
·
表面工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2024
·
IF 5.4
Fuyan Chen,Bowen Liu,Wei Shao,Jiaxin Gao,Chenxi Zhao,Dongdong Shen,Daocheng Pan,Xinan Shi
Compared with the traditional Mo back electrode of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, the transparent and conductive electrode of fluorine-doped tin oxide (FTO) has the advantages of low lattice mismatch with the CZTSSe absorber, earth-abundant composition, transparency, and advanced applications in building integrated photovoltaics. Hence, the research of bifacial FTO/CZTSSe thin film solar cells has attracted more and more attention. However, the poor interface contact between n-type FTO/p-type CZTSSe prevents the improvement of power conversion efficiency (PCE) of CZTSSe thin film solar cells deposited on the FTO substrate. Therefore, back contact interface modification is an effective strategy to promote the performance of the FTO/CZTSSe solar cells. Here, we choose the solution-processed MoO3 as the interface layer to modify the interface of FTO/(Cu,Ag)2ZnSn(S,Se)4 (CAZTSSe), and systematically investigate the effects of the thickness of MoO3 interface layer on the performance of FTO/MoO3/CAZTSSe solar cells. It is found that the optimal thickness of the solution-deposited MoO3 interface layer is 30 nm. As a result, kesterite solar cells on the FTO substrate achieve a front-side PCE of 9.49 % and a rear-side PCE of 1.04%.
研究领域:
材料科学
·
太阳能
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
·
2021
·Vol. 98
·期 1
·24-30
·
IF 2.326
Lu Qingjian,Gao Min,Lu Chang,Pan Taisong,Cheng Tiedong,Long Fei,Lin Yuan
Vanadium dioxide (VO 2 ) has unique electrical and optical properties, which have practical applications in many devices. However, preparing high-quality VO 2 films and transferring them to flexible substrates by an economic and simple way are still challenging. Functional thin films can be grown on van der Waals (vdW) substrates and then transferred to flexible substrates due to the weak interaction between films and their substrates. Herein, VO 2 thin films were grown on mica substrates by using the polymer-assisted deposition technique. By controlling the ion concentration in the polymer precursor solution, a flat seed layer was prepared at the initial growth stage. It was found that the introduction of the seed layer can improve the crystallinity, increase the grain size and reduce the defects of the VO 2 thin films. It is believed that less nucleation density and layered growth at the initial growth stage are critical to the formation of large size grains. Our results confirmed that chemical solution deposition can prepared high-quality VO 2 films on vdW substrates.
研究领域:
材料科学
·
表面科学
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2024
·Vol. 14
·期 17
·1456
·
IF 4.4
Guoqiang Xi,Hangren Li,Dongfei Lu,Xudong Liu,Xiuqiao Liu,Jie Tu,Qianqian Yang,Jianjun Tian,Linxing Zhang
Strontium aluminate, with suitable lattice parameters and environmentally friendly water solubility, has been strongly sought for use as a sacrificial layer in the preparation of freestanding perovskite oxide thin films in recent years. However, due to this material’s inherent water solubility, the methods used for the preparation of epitaxial films have mainly been limited to high-vacuum techniques, which greatly limits these films’ development. In this study, we prepared freestanding single-crystal perovskite oxide thin films on strontium aluminate using a simple, easy-to-develop, and low-cost chemical full-solution deposition technique. We demonstrate that a reasonable choice of solvent molecules can effectively reduce the damage to the strontium aluminate layer, allowing successful epitaxy of perovskite oxide thin films, such as 2-methoxyethanol and acetic acid. Molecular dynamics simulations further demonstrated that this is because of their stronger adsorption capacity on the strontium aluminate surface, which enables them to form an effective protective layer to inhibit the hydration reaction of strontium aluminate. Moreover, the freestanding film can still maintain stable ferroelectricity after release from the substrate, which provides an idea for the development of single-crystal perovskite oxide films and creates an opportunity for their development in the field of flexible electronic devices.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Energy Technology
·
2016
·Vol. 4
·期 4
·473-478
·
IF 2.557
Yangyang Wang,Jiaming Luo,Riming Nie,Xianyu Deng
Despite the rapid progress of the power conversion efficiency (PCE) of perovskite solar cells, the reproducibility, stability, and large-scale production are major challenges. Here, we present a simple and quick solution-depositing process to achieve high-quality perovskite films by adding an insulating polymer of polyacrylonitrile (PAN) as a film-forming additive into the CH 3 NH 3 PbI 3 solution. With the CH 3 NH 3 PbI 3 :PAN films serving as an active layer, planar heterojunction perovskite solar cells show a PCE of 13.08 % at an area of 0.12 cm 2 and 7.32 % at a large area of 1.0 cm 2 . The PCE loss is only about 40 % from the small-area to larger-area devices fabricated by using a solution-based deposition process. The measurements were performed in air without any device encapsulation. We also used the conjugated polymer poly(3-hexylthiophene) (P3HT) as the alternative for PAN. The device performance indicates that the conjugated polymer is unsuitable as the additive, which we attribute to the photo-induced charge transfer between CH 3 NH 3 PbI 3 and P3HT.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
DALTON TRANSACTIONS
·
2023
·Vol. 52
·期 36
·12958-12967
·
IF 4
Jiejun Pan,Guang Xu,Sixue Ren,Tingjie Xu,Dongrui Li,Mengxin Liu,Xinan Shi,Daocheng Pan
Rare earth-doped metal oxide thin films exhibit remarkable potential for application in anti-counterfeiting, owing to their exceptional fluorescent properties. However, the existing fabrication techniques for these rare earth-doped luminescent thin films are predominantly complex and necessitate high-temperature conditions. In light of this issue, we present a low-temperature method for in situ fabrication of luminescent Ca1−xMoO4:Eux3+ and Sr1−xMoO4:Tbx3+ nanocrystal thin films by a solution deposition process. The developed method has the advantages of simple operation, rapid and low-temperature synthesis. The optimal chemical compositions of molybdate-based luminescent films are Ca0.90MoO4:Eu0.103+ and Sr0.90MoO4:Tb0.103+. Moreover, we evaluate the practical feasibility of luminescent nanoparticle films in the field of anti-counterfeiting by combining the unique fluorescent properties of rare earth ions and designing customized fluorescent patterns.
研究领域:
材料科学
·
纳米技术
·
光学
·
防伪技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2021
·Vol. 32
·期 11
·14274-14285
·
IF 2.478
Gao Qianqian,Dai Yuqiang,Wei Xile,Zhou Changping,Gong Wenfeng,Song Haixiang,Guo Zhanhu,Li Chengbo
The Aurivillius compound Pb x Bi 6− x Fe 0.5 Co 0.5 Ti 4 O 18 thin films were prepared via chemical solution deposition method and the influence of Pb 2+ ions doping on the structure, ferroelectric and leakage properties were studied. With the increasing concentration of Pb 2+ ions, the lattice distortion is increased and the growth of the films along ab plane is promoted. The calculation results show that the internal stress of the films increases with the increase of Pb 2+ concentration. For the samples with low Pb 2+ doping concentration ( x < 0.6), the leakage current densities are also decreased, which can be attributed to the decrease in oxygen vacancy concentration. Due to the enhanced lattice distortion and decreased leakage current densities, the ferroelectric properties are improved. The film with x = 0.2 has a high saturation polarization of 42.3 µC/cm 2 . According to the fitting results, the leakage conduction mechanism is attributed to the combined effect of space-charge-limited conduction mechanism and ionic conduction mechanisms.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
铁电学
·
薄膜制备
✓ 已验证
DOI
高影响因子
NANOTECHNOLOGY
·
2020
·Vol. 31
·期 19
·195705
·
IF 3.551
Chen Wang,Qinghua Yi,Qiang Zhang,Fumao Wang,Guifu Zou
Cu2BaSn(S1−xSex)4 has shown great prospects in the photoelectric field due to Earth-abundance, low toxicity, cost efficiency, direct bandgap, high absorption coefficient (>104 cm−1) and reduced anti-site disorder relative to Cu2ZnSn(S1−xSex)4. A fully-tunable ratio of S/Se is the key to broaden the bandgap of Cu2BaSn(S1−xSex)4. Here, we introduce a thionothiolic acid metathesis process to readily tune the stoichiometry of Cu2BaSn(S1−xSex)4 films for the first time. Different stoichiometric Se/(S + Se) of Cu2BaSn(S1−xSex)4 from zero to one can vary the bandgap range from 2 to 1.68 eV. The grain size of Cu2BaSn(S1−xSex)4 films can be grown more than 10 μm. The optimized bandgap and high-quality growth of Cu2BaSn(S1−xSex)4 films ensure the best power conversion efficiency of 2.01% for solution-processed Cu2BaSn(S1−xSex)4 solar cells. This method provides an alternative solution-processed way for the synthesis of fully stoichiometric Cu2BaSn(S1−xSex)4.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Jinyin Zhang,Yanyan Lou,Miaomiao Liu,Hualan Zhou,Yin Zhao,Zhuyi Wang,Liyi Shi,Dongdong Li,Shuai Yuan
The transmittance and conductivity of fluorine-doped tin oxide (FTO) conductive glasses are the critical factors limiting the performance of dye-sensitized solar cells (DSSCs). Here, the transmittance and conductivity of commercial FTO glasses were improved via a colloid–solution deposition planarization (CSDP) process. The process includes two steps. First, the FTO nanocrystal colloid was deposited on the FTO glasses by spin-coating. Secondly, the coated glasses were treated by FTO precursor solution. Compared to the bare FTO glasses, the modified FTO glasses by the CSDP process achieved 4% increase in transmittance (at 550 nm) and 11% decrease in sheet resistance, respectively. In addition, the modified FTO glasses can reduce the aggregation of Pt nanoparticles and improve the electrocatalytic activity of Pt counter electrodes. When the modified FTO glasses were used to assemble DSSCs, the cells got a photoelectric conversion efficiency as high as 9.37%. In contrast, the efficiency of reference cells using bare FTO substrates was about 8.24%.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）