APPLIED SURFACE SCIENCE
·
2021
·
IF 6.707
Miao Zhang,Yongqiao Zhu,Dawei Li,Peizhong Feng,Cheng Xu
In this study, HfO 2 films were prepared using the sol–gel method with HfCl 4 as a precursor, HNO 3 as a hydrolysis inhibitor and polyethylene glycol as an additive. Investigations were then made into the properties and laser damage characteristics of the films after annealing at different temperatures. The prepared films have high transmittance, low absorption and high laser-induced damage threshold (LIDT). Specifically, the LIDT of the film was as high as 31.6 J/cm 2 after annealing at 353 K, and it gradually dropped to 21.7 J/cm 2 after annealing at 573 K, indicating its strong resistance to high temperature. This study reported a novel method for preparing sol–gel HfO 2 films with high LIDT and pinpointed the potential application of the films under high-temperature conditions.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2024
·
IF 4.3
Guili Wang,Pifu Gong,Jiyong Yao
A new quaternary Hg-based selenide K2HgGe3Se8 was successfully synthesized and characterized as an engaging infrared (IR) nonlinear optical (NLO) material, which crystallizes in the P21 space group of the noncentrosymmetric monoclinic crystal system. The crystal structure of K2HgGe3Se8 is characterized by the stacking of countless [HgGe3Se8]2−2∞ layers with K+ cations filling the interlayers. The UV–vis–NIR diffuse reflectance spectrum shows that K2HgGe3Se8 possesses an indirect band gap of 2.13 eV. The second harmonic generation (SHG) response of K2HgGe3Se8 is approximately 1.1 times that of AgGaS2 (AGS) within the particle size of 20–50 μm along with a nonphase-matching (NPM) behavior at 2090 nm, as indicated by the SHG test. K2HgGe3Se8 also has a large powder laser-induced damage threshold (∼ 2.3 × AGS). As revealed by theoretical calculations, the optical properties of K2HgGe3Se8 are predominantly determined by [HgSe4] and [GeSe4] tetrahedra, and K2HgGe3Se8 possesses a calculated optical band gap of 1.44 eV together with a maximum SHG coefficient d22 of −7.70 pm V–1.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CHEMISTRY-A EUROPEAN JOURNAL
·
2022
·Vol. 28
·期 61
·e202202063
·
IF 5.02
Wenfeng Zhou,Wenlong Liu,Sheng-Ping Guo
Graphical A new AgGaS 2 -type sulfide (Na 0.74 Ag 1.26 )BaSnS 4 with compressed chalcopyrite-like structure was obtained. It exhibits balanced NLO properties, including moderate SHG response, wide band gap, and high LIDT. The development of high-power solid-state lasers is in urgent need of infrared (IR) nonlinear optical (NLO) materials with wide band gaps and high laser-induced damage thresholds (LIDTs). Herein, a new compressed chalcopyrite-like IR NLO crystal (Na 0.74 Ag 1.26 )BaSnS 4 was successfully synthesized using a facile high-temperature solid-state method. Its structure can be considered as a variant of chalcopyrite AgGaS 2 (AGS)-type ones. It features a three-dimensional framework constructed by corner-sharing {[(Na/Ag)S 4 ] 7− } ∞ layers and isolated SnS 4 tetrahedra with negative cavities occupied by counter ion Ba 2+ . (Na 0.74 Ag 1.26 )BaSnS 4 exhibits phase-matchable moderate SHG response (0.31 × AGS), wide band gap (3.70 eV), and high LIDT (6.44 × AGS). Theoretical calculations reveal that the NLO response of (Na 0.74 Ag 1.26 )BaSnS 4 is mainly originated from the synergetic effects of AgS 4 and SnS 4 tetrahedra, and the inclusion of alkaline and alkaline earth metals is responsible for the wide band gap and high LIDT. Moreover, the discovery of this chalcopyrite-like compound will provide a feasible design strategy for the exploration of new promising IR NLO materials.
研究领域:
材料科学
·
晶体学
✓ 已验证
DOI
高影响因子
Advanced Science
·
2022
·Vol. 9
·期 15
·2106120
·
IF 17.521
Peng Wang,Yu Chu,Abudukadi Tudi,Congwei Xie,Zhihua Yang,Shilie Pan,Junjie Li
Design and fabrication of new infrared (IR) nonlinear optical (NLO) materials with balanced properties are urgently needed since commercial chalcopyrite-like (CL) NLO crystals are suffering from their intrinsic drawbacks. Herein, the first defect-CL (DCL) alkali-earth metal (AEM) selenide IR NLO material, DCL-MgGa 2 Se 4 , has been rationally designed and fabricated by a structure prediction and experiment combined strategy. The introduction of AEM tetrahedral unit MgSe 4 effectively widens the band gap of DCL compounds. The title compound exhibits a wide band gap of 2.96 eV, resulting in a high laser induced damage threshold (LIDT) of ≈3.0 × AgGaS 2 (AGS). Furthermore, the compound shows a suitable second harmonic generation (SHG) response (≈0.9 × AGS) with a type-I phase-matching (PM) behavior and a wide IR transparent range. The results indicate that DCL-MgGa 2 Se 4 is a promising mid-to-far IR NLO material and give some insights into the design of new CL compound with outstanding IR NLO properties based on the AEM tetrahedra and the structure predication and experiment combined strategy.
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Materials Chemistry Frontiers
·
2024
·
IF 6
Yang-Ping Zhang,Shao-Min Pei,Xiao-Ming Jiang,Bin-Wen Liu,Guo-Cong Guo
Noncentrosymmetric salt-inclusion chalcogenides (SICs) are a burgeoning class of second-order nonlinear optical (NLO) materials distinguished by their exceptional optical properties. These materials often exhibit robust second-harmonic generation (SHG) responses and possess wide band gaps that typically correspond to their impressive laser-induced damage threshold (LIDT). In this study, we present two isostructural salt-inclusion chalcogenides, namely [K4Cl][Zn11In9S26] (1) and [K4Cl][Cd11In9S26] (2), which consist of highly parallel-oriented host [MII11In9S26]3− frameworks, with guest [K4Cl]3+ ions incorporated to enhance structural stability and maintain charge balance. Notably, compounds 1 and 2 exhibit favorable NLO properties, including strong nonphase matching SHG intensities (1.9 and 5.7 × AgGaS2 for particle sizes of 30–50 μm) under 1910 nm laser irradiation. Furthermore, compounds 1 and 2 demonstrate suitable band gaps (2.48 and 2.61 eV) and exhibit minimal anisotropy in their thermal expansion coefficients (ranging from 0.09 to 1.01), contributing to their significant LIDT (7.0 and 4.6 × AgGaS2@1064 nm), respectively.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2025
·
IF 3.4
Qiang Liu,Wenhao Xing,Bohui Xu,Guili Wang,Chunxiao Li,Pifu Gong,Jiyong Yao
In this research, a new ternary arsenide, Cd5As2Br4, with a nonlinear optical (NLO) property has been synthesized. Cd5As2Br4 possesses a noncentrosymmetric structure with a space group belonging to the orthorhombic crystal system, specifically Pna21. The structure of Cd5As2Br4 is formed by the interconnection of three one-dimensional structures, resulting in a three-dimensional structure. The diffuse reflectance spectrum reveals that Cd5As2Br4 has a direct band gap of 1.91 eV. NLO performance tests indicate that at a particle size range of 20–50 μm, the second harmonic generation (SHG) intensity of Cd5As2Br4 is 0.7 times that of AgGaS2 (AGS), and it exhibits nonphase-matching behavior at 2090 nm. Additionally, at a particle size range of 125–150 μm, the laser-induced damage threshold (LIDT) of Cd5As2Br4 is equal to that of AGS. Finally, theoretical calculations elucidate that Cd5As2Br4 possesses a calculated maximum SHG coefficient d15 of −11.66 pm/V.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
OPTICS EXPRESS
·
2019
·Vol. 27
·期 26
·37568-37578
·
IF 3.561
Yongqiao Zhu,Ming Ma,Pu Zhang,Wenzhe Cai,Dawei Li,Cheng Xu
In this study, three different types of ZrO2 films were prepared with different precursors and additives using the sol-gel method. High-temperature annealing was implemented to investigate the impact of temperature on optical properties, microstructure, surface morphologies and absorption of these films. According to the laser-induced damage threshold (LIDT) tests on films having experienced annealing and those implemented with in-situ high temperature, the ZrO2 film with ZrOCl2·8H2O as the precursor and copolymer of silicone and polyaldoxyl ether as the additive had the highest resistance to laser-induced damage. After annealing at 623 K, its LIDT was 21.4 J/cm2, while that at an in-situ high temperature of 523 K was 23.9 J/cm2. The strong high temperature resistance was likely attributed to the usage of carbon-free precursor and high temperature-resistant additive, which contributed to low carbon contents and less structural damage caused by organic matter evaporation. In this context, there were less high temperature-induced impurity and structural defects, leading to higher LIDT values. This study provided a novel method for preparing high temperature-resistant sol-gel films, which shed light upon wider potential application of sol-gel films at high-temperature conditions.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
INORGANIC CHEMISTRY
·
2024
·
IF 4.3
Ziyan Lv,Rukang Li
A new noncentrosymmetric crystal Na12(NbO)3(PO4)7 was successfully synthesized in the niobium phosphate system. Its structure characterizes isolated and highly distorted NbO6 octahedra joining with isolated PO4 groups to form a unit of a (Nb6P6O12) hexagonal star by sharing O atoms. In (Nb6P6O12) hexagonal stars, all Nb and P atoms are in a hexagonal star-like arrangement and all Na atoms are also in a hexagonal star-like arrangement, except for Na(3) and Na(10) atoms. Notably, it exhibits a strong phase-matched second harmonic response: 3 × KDP, which is rare in known niobium phosphate systems. Meanwhile, it also has a wide optically transparent window (0.29–4.44 μm) and a high laser-induced damage threshold (3.5 GW/cm2). More importantly, Na12(NbO)3(PO4)7 is a congruent melting compound that has the potential to be grown into large-sized single crystals by the Czochralski method. These excellent properties make it a promising candidate as a mid-infrared nonlinear optical crystal.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Symmetry-Basel
·
2023
·Vol. 15
·期 1
·236
·
IF 2.7
Zi-Xuan Wu,Wen-Fa Chen,Bin-Wen Liu,Xiao-Ming Jiang,Guo-Cong Guo
A quaternary metal chalcogenide, namely K2CdGe3S8(I), is obtained through a high-temperature solid-state approach. CompoundIcrystallizes with the non-centrosymmetric space groupP212121. It features a 2D layer structure with [CdGe3S8] layers consisting of tetrahedral GeS4and CdS4units, and counter K+embedded between the layers. The compound exhibits a powder second-harmonic generation (SHG) response of ~0.1 times that of KH2PO4(KDP) with phase-matchable character at the laser wavelength of 1064 nm. Remarkably, it has a wide band gap (3.20 eV), which corresponds to a favorable high laser-induced damage threshold of 6.7 times that of AgGaS2. In addition, the calculated birefringence (Δn) is 0.039 at the wavelength of 1064 nm, which satisfies the Δncriteria for a promising infrared NLO material.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 15
·4459-4465
·
IF 6.641
Yang-Jie Lin,Bin-Wen Liu,Run Ye,Xiao-Ming Jiang,Long-Qi Yang,Hui-Yi Zeng,Guo-Cong Guo
Two new infrared (IR) nonlinear optical (NLO) chalcogenides, SrCdSnQ4 (Q = S and Se) (1 and 2), were obtained by mixing NLO-active metal chalcogenides and d10 metal tetrahedral motifs in an alkali metal-containing system. Their structures are constructed with edge- and corner-sharing CdQ4 and SnQ4 (Q = S and Se) units to form two-dimensional (CdSnQ4)2− layers, between which are embedded with Sr2+. Compounds 1 and 2 have moderate band gaps of 2.05 and 1.54 eV, respectively. They exhibit strong second-harmonic generation intensities that are comparable to that of the benchmark AgGaS2 using a 2040 nm laser. Furthermore, their laser-induced damage thresholds are 10 and 5 times higher than that of AgGaS2, respectively. The strong NLO efficiency of these two compounds can be ascribed to SnQ4 tetrahedra with a synergetic enhancement in the large distortion of CdQ4 tetrahedra, shedding light on the exploration of new IR NLO materials with mixed NLO-active and synergetic distorted motifs.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2021
·
IF 9.811
Yu Chu,Peng Wang,Hao Zeng,Shichao Cheng,Xin Su,Zhihua Yang,Junjie Li,Shilie Pan
The development of new infrared (IR) nonlinear optical (NLO) materials with strong second-harmonic generation (SHG) responses and high laser-induced damage thresholds (LIDTs) is urgent but challenging. Herein, the defective diamond-like chalcogenide Hg3P2S8 (HPS) was rationally designed and fabricated by a flexible and rigid tetrahedral motif combined strategy. HPS exhibits a phase-matching SHG response of ∼3.6 × AGS (the largest one in the reported ternary sulfides), high LIDT (∼3 × AGS), wide IR transparent region (0.43–16.3 μm), moderate birefringence (0.043 at 1064 nm), and good physicochemical stability and crystal growth habits. Theoretical analyses confirm that the large SHG effect originates from the synergistic effects between distorted HgS4, PS4, and vacancy-induced nonbonding electrons. The results indicate that HPS is a promising NLO candidate for high-power, high-efficiency laser output in the mid-IR region, which provides an insight into the exploration of new IR NLO materials.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
Inorganic Chemistry Frontiers
·
2022
·Vol. 10
·期 4
·1112-1118
·
IF 7.779
Ming-Shu Zhang,Bin-Wen Liu,Xiao-Ming Jiang,Guo-Cong Guo
Two quaternary phosphides AIn3Si4P9 (A = Ca, 1; Sr, 2) belonging to the non-centrosymmetric space group P41212 are discovered and synthesized through the solid-state method for the first time. They present extraordinary double-helix frameworks composed of corner-shared tetrahedral [InP4] and [SiP4] units. Although compounds 1 and 2 have undesirable band gaps (1.25 and 1.15 eV), their extremely low thermal expansion coefficients (∼10−6) result in high laser-induced damage thresholds approximately seven times that of benchmark AgGaS2 under a 2050 nm laser. Moreover, both compounds show weak second-harmonic generation intensities primarily caused by Kleinman forbidden nonlinear optical coefficients. Theoretical calculations further reveal that the electron transitions mainly originated from the tetrahedral [InP4] and [SiP4] units.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）