Controlling and optimizing amplified spontaneous emission based on CsPbBr3@MCM-41 molecular sieve composite
CsPbX 3 (X = Cl, Br, I) perovskites have emerged as promising candidate lasing materials due to their high optical gain , low defect state density, and high absorption coefficient. Unfortunately, they suffer from poor stability, particularly with respect to temperature, moisture, and light exposure, preventing their use in practical optoelectronic applications , such as for amplified spontaneous emission (ASE) with an ultralow laser threshold. Herein, CsPbBr 3 @MCM-41 molecular sieve (CMM) composites are controllably prepared by different ultrasonication and stirring treatments. In addition, different perovskite concentrations and heat-treatment conditions are also considered to demonstrate the ASE behaviors. In addition, CMM@PS (CMMP) and CMM@AB (CMMA) composites were fabricated successfully by further optimizing the mixing ratio of CMM and the polymer. More excitingly, the stability of the CMM@polymer films with respect to the external environment is greatly improved after the polymer coating . To our surprise, the CMM@ploymer thin films demonstrated ASE at room-temperature, with an ASE threshold as low as 0.136 mJ/cm 2 and 0.049 mJ/cm 2 for CMMA and CMMP, respectively. These results clearly shed light upon the control and optimization of CsPbBr 3 perovskite composite films , paving the way for their widespread use in optoelectronic applications .
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