As worldwide forest fire frequently causes a serious threat to forest resources and global climate change , novel early forest fire monitoring and detection technologies are urgently required to explore. Herein, a self-powered forest fire alarm system (FFAS) is proposed by coupling thermosensitive effect and triboelectric effect as an aim of effective forest fire monitoring and detecting. The FFAS is fabricated as a self-powered early forest fire monitoring and detection system by connecting a spherical free-standingmode triboelectric nanogenerator (S-TENG) as power source with polydopamine-modified graphene oxide (P-GO) as thermosensitive sensor and commercial LEDs as alarm. When encountering an open fire or abnormal high temperature the thermosensitive sensor based on P-GO can be in-situ thermally reduced, inducing an obvious transition in electrical resistance. Thus, the output voltage of S-TENG can be tuned by the impedance matching effect between special output characteristics of TENG and working status of thermosensitive sensor, and then can directly light up the LEDs as alarm. Furthermore, the FFAS achieves a low temperature response (160 °C), rapid response time (~3 s), and especially no external power supply. Consequently, the FFAS based on impedance matching effect between TENG and thermosensitive sensor would provide a real-time, rapidly responsive, and self-powered monitoring strategy for the early forest fire warning and detection.
2D ionic-electronic coupled materials, offering mobile ions as an additional degree of freedom, open new avenues for device functionality beyond traditional electronic systems. However, harnessing ionic-electronic interactions to achieve broadband photodetection remains unexplored. Here, a van der Waals ionic-electronic semiconductor is reported that exhibits an ultrahigh and anisotropic temperature coefficient of resistance (TCR) of −7.29% °C −1 , which is attributed to its high ionic activation energy. Leveraging both photoelectric and bolometric effects, AIPSe enables dual-mode photodetection across the visible to near-infrared range. Through device engineering with asymmetric Schottky contacts and ionic migration modulation, photodiodes with an ultrahigh rectification ratio of ≈108 and bias-tunable dual-mode operation: photovoltaic detection with a responsivity of 0.385 A W −1 at 532 nm, and bolometric sensing with 0.486 A W −1 at 1550 nm is achieved. These devices demonstrate spectral self-recognition, secure dual-band optical communication, and multi-wavelength imaging capabilities. The work establishes ionic-electronic correlated transport in 2D materials as a new paradigm for beyond-bandgap optoelectronic technologies.
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