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Realizing Ferromagnetism in a Field-Effect Transistor Based on VSe2 Thin Flakes

Changsheng Zhu,Bin Lei,Fanbao Meng,Jianhua Cui,Weizhuang Zhuo,Wenxiang Wang,Ziji Xiang,Xianhui Chen

Ferromagnetic order in 2D2D materials has triggered widespread interest because of their applications in spintronic devices. Monolayer 1T-VSe 2 , as a recently emerged candidate of 2D2D ferromagnetic material, exhibits complicated behaviors that contradict the theoretical predictions. In this work, a systematic investigation is presented on the evolution of the transport properties in VSe 2 thin flakes controlled by gate voltage. Notably, for the first time, a paramagnetic-to-ferromagnetic transition is realized in a VSe 2 thin flake using a field-effect transistor setup with solid ion conductor of polycrystalline Li 1+ x + y Al x (Ti 2− y Ge y )P 3− z Si z O 12 serving as the gate dielectric. The Curie temperature determined from the electrical transport measurements is ≈40 K. The electric-field-controlled ferromagnetism in exfoliated VSe 2 flakes provides an excellent platform for developing advanced spintronics as well as investigating unusual emergent physics in 2D systems.