Memristive Effect in Ti3C2Tx (MXene) Polyelectrolyte Multilayers
Graphical MXene flakes were incorporated into polyelectrolyte multilayers and used as active media for memristive devices. The memristors were produced by layer-by-layer assembly through dipping into the corresponding solutions. The current difference between high and low resistive state were measured as two orders of magnitude. DFT calculations were applied to rationalize the observations. The emerging novel class of two-dimensional materials – MХenes – have attracted significant research attention. However, there are only few reports on using the most prominent member of the MXene family, Ti 3 C 2 T x , as an active material for memristive devices within a polyelectrolyte matrix and its deposition on inert electrodes like ITO and Pt. In this study, we systematically investigate Ti 3 C 2 T x MXenes synthesized with two classical delamination agents, such as lithium chloride and tetramethylammonium hydroxide, to identify the most suitable candidate for memristive device applications. The characteristics of memristors based on the hybrid structures consisting of MXene−polyelectrolyte multilayers, specifically polyethyleneimine (PEI) and poly(sodium 4-styrenesulfonate) (PSS) are explored. The PEI(MXene)/PSS memristor exhibits a voltage threshold (V SET/RESET ) range of 1.5–2.0 V, enabling the transition from a high-resistive state (HRS) to a low-resistive state (LRS), along with a significant current switching ratio of approximately two orders of magnitude. The observed V SET/RESET difference of approximately 4 V is further supported by density functional theory (DFT) calculated redox potential. These findings underscore the potential of polyelectrolyte-based memristors, such as the in PEI−Ti 3 C 2 T x −PSS system, in facilitating the development of highly functional, self-assembled memristive devices with diverse applications.
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