Communications Materials
·
2025
·Vol. 6
·期 1
·1-8
·
IF 9.6
Lin Cunjian,Yang Rujun,Wu Zishuang,Wang Yajing,Zhan Chenhan,Miyata Hirohisa,Zeng Xiankan,Zheng Yuantian,You Shihai,Lv Ying,Zhuang Yixi,Xie Rong-Jun,Ueda Jumpei
Persistent luminescence (PersL) in inorganic materials, lasting from seconds to even days, has attracted considerable attention. Despite the promise of electric power-driven PersL for lighting and display device applications due to its convenience and manageability, studies on electrically driven inorganic PersL are lacking. Here, we report an inorganic PersL in electroluminescent devices, which shows an energy storage effect that persists beyond 24 h after charging with an alternating current electric field at 250 K. The spin-coating method-prepared emission layer composites consist of a small bandgap copper-doped zinc sulfide core, a high dielectric constant alumina shell and a chemically passivated dielectric polydimethylsiloxane medium (ZnS:Cu@AlO x @PDMS), and these composites exhibit well-distributed electric fields and excellent operational stability. Thermoluminescence characterization reveal that PersL with an ~ 0.3 eV trap depth in electroluminescent devices mainly arises from the charge separation via hot-electron impact excitation and charge trapping within trap states in the emission layer. This study on electrically chargeable PersL in alternating current-driven electroluminescent devices can enhance our understanding of luminescence mechanisms in inorganic semiconductors.
研究领域:
材料科学
·
光学工程
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
COMPOSITES PART B-ENGINEERING
·
2024
·
IF 12.7
Kerong Yang,Yushun Zhao,Xiaoqing Liu
For the advanced energy systems with ultra-high voltage and frequency, in order to improve the thermal conductivity , arc resistance and mechanical strength of epoxy-based dielectric materials , the addition of micron inorganic fillers is necessary. However, this will inevitably degrade their breakdown strength. In this work, the example of constructing dual-interface charge barriers by optimizing molecular structure at micron filler/epoxy matrix interface to capture charge and then enhance the breakdown strength of epoxy composites is reported. Results show that the Al 2 O 3 @PVDF-6/BPA system with optimized interfacial structure exhibits the breakdown strength of AC and DC voltages of 37.5 and 67.8 kV/mm, respectively, far outperforming current epoxy composites containing micron fillers. The charge trapping effects in the dual-interface charge barriers are comprehensively investigated, which is confirmed to be the reason for the improved breakdown strength. In particular, the construction of dual-interface charge barriers hardly sacrifices the thermal and mechanical properties of epoxy composites. This work unveils a scalable approach to exploring satisfied dielectric epoxy composites by dual-interface charge barriers construction at the micron filler/epoxy matrix interface.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Jingyu Lin,Junhao Jiang,Yukang Zhou,Qianqian Fan,Qixin Zhuang,Puke Mi,Wei Yin,Peiyuan Zuo
Mixing fillers featured with wide band gaps in polymers can effectively meet the requirement of higher energy storage densities. However, the fundamental relationship between the crystal structures of fillers and the dielectric properties of the corresponding nanocomposites is still unclear. Accordingly, we introduced ultralow contents of the synthesized cubic Hafnium dioxide (c-HfO2) or monoclinic Hafnium dioxide (m-HfO2) as deep traps into poly(ether imide) (PEI) to explore their effects on dielectric properties and the charge-blocking mechanism. m-HfO2/PEI showed better charge trapping due to the higher electron affinity and deeper trap energy. At room temperature, the 0.4 vol % m-HfO2/PEI maintains an ultralow dielectric loss of 0.008 while obtaining a dielectric constant twice that of pure PEI at 1 kHz, simultaneously outperforming in terms of leakage current density, breakdown strength (452 kV mm–1), discharge energy density (Ud, 5.03 J cm–3), charge–discharge efficiency (η, 92%), and dielectric thermal stability. At 125 °C, it exhibits a considerable Ud of 2.48 J cm–3 and a high η of 85% at 300 kV mm–1, surpassing the properties of pure PEI. This promising work opens up a new path for studying HfO2-derived dielectrics with unique crystal structures.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2025
·Vol. 13
·期 14
·2403424
·
IF 7.2
Yu Wang,Qichao Xue,Jincheng Zhang,Yuying Wang,Hang Ma,Fang Zhong,Ning Zhou,Chenying Yang,Yuchuan Shao,Tao Liang
Inspired by the human visual system, artificial optoelectronic synaptic devices are capable of performing perception, recognition, and memory tasks in a highly efficient and parallel way. Among the materials explored for constructing these devices, 2D transition metal oxides (TMOs) stand out due to their tunable compositions, exceptional stability, and unique optoelectronic properties. However, challenges such as complex device architectures, compromised material quality, and high energy consumption persist. Herein, the successful growth of 2D nonlayered α-Fe 2 O 3 nanoflakes is reported via a molecular sieve-assisted chemical vapor deposition (CVD) method. These nanoflakes, with a minimum thickness of two unit cells, exhibit high crystallinity, n-type charge carrier transport properties, and response to 450 nm laser illumination. Notably, the charge trapping/de-trapping at oxygen vacancies (V O ) and the light-induced ionization of V O contribute to the distinct electron concentration and current hysteresis during cyclic voltage sweeps in the thin α-Fe 2 O 3 nanoflakes. This mechanism results in a significantly prolonged photocurrent decay, enabling the emulation of biological synaptic behaviors such as excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and long-term potentiation (LTP). Combined with the scalability of the CVD process, this work highlights the potential of 2D α-Fe 2 O 3 for applications in integrated artificial vision systems.
研究领域:
材料科学
·
神经形态计算
·
光电材料
✓ 已验证
产品关联
DOI
高影响因子
POLYMERS FOR ADVANCED TECHNOLOGIES
·
2025
·Vol. 36
·期 3
·e70127
·
IF 3.4
Jingyu Lin,Lingzhi Nie,Wei Yin,Pengtu Zhang,Peiyuan Zuo,Puke Mi,Qixin Zhuang
The emerging electronic devices demand dielectric polymer films with high energy storage density over a wide temperature range. However, the mobility of charge carriers leads to unsatisfactory dielectric performance even for heat-resistant dielectric polymers such as polyetherimide (PEI). Therefore, to enhance the energy storage density of polymer dielectrics, it is critical to concurrently focus on increasing the dielectric constant and improving the breakdown strength by hindering the migration of electrons, which is highly correlated with the intrinsic bandgap structures of dielectrics. Inspired by the tunable bandgap structure of doped semiconductors, this work is aimed at strengthening the trapping of charge carriers depending on the construction of electron traps and the formation of electron–hole pairs, that is, to tailor the bandgap of ZnS 1−x O x via oxygen doping and the band structure at the ZnS 1−x O x /PEI interface region, thereby significantly enhancing the breakdown strength of the composite films. At room temperature and 450 kV mm −1 , the energy density ( U d ) of 0.4 vol% ZnS 0.7 O 0.3 /PEI reaches 5.7 J cm −3 with a charge–discharge efficiency ( η ) of 96.6%, which is 2.3 times that of pure PEI (2.5 J cm −3 , η = 86.2%). Moreover, the composite film exhibits excellent dielectric stability at high temperatures. At 150°C and 350 kV mm −1 , the U d remains 3.4 J cm −3 , with a high η of 89.1%, significantly higher than that of pure PEI (1.5 J cm −3 , η = 80.6%). This work provides a novel perspective for the design of high-performance dielectric composite films via interfacial engineering.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
DYES AND PIGMENTS
·
2017
·
IF 3.473
Haiwei Tan,Hongyan Yao,Ying Song,Shiyang Zhu,Huaxuan Yu,Shaowei Guan
In this work, a novel tetra-amine, bis (4-(3, 5-bis (4-amino-2-(trifluoromethyl) phenoxy) phenoxy) phenyl) methanone, was synthesized and then utilized to produce hyperbranched polyamic acids via polycondensation with 4, 4’-(hexafluoroisopropylidene) diphthalic anhydride (6FDA). The resulting hyperbranched polyamic acids underwent termination by (4-amino) phenyl ferrocene and imidization, leading to ferrocene-terminated hyperbranched polyimide (HBPI-Fc). The resulting HBPI-Fc displayed superior solubility in conventional organic solvents and excellent thermal stability. A memory device with a configuration of indium tin oxide (ITO)/HBPI-Fc/Al was fabricated, in which the HBPI-Fc acted as the active layer. The device exhibited bistable electrical conductivity switching and nonvolatile bipolar write-once-read-many-times memory character with two threshold voltages of 2.2 V and −2.6 V, respectively, during positive and negative voltage sweep. The device exhibited an ON/OFF current ratio of 10 4 under a constant bias of −1.0 V and good stability in both ON- and OFF-state during the test period of 10 4 s. The revealed electrical bistability of the HBPI-Fc was found mainly due to the effective charge trapping effect of the electroactive terminal ferrocene groups.
研究领域:
材料科学
·
电子工程
·
有机化学
✓ 已验证
产品关联
DOI
高影响因子
THIN SOLID FILMS
·
2022
·
IF 2.358
Peng Zhang,Emmanuel Jacques,Laurent Pichon,Olivier Bonnaud
An organic ambipolar charge trapping non-volatile memory device is proposed based on tris(8-hydroxy quinoline) aluminum(Alq 3 )/ fullerene(C 60 )/pentacene double heterojunctions. The double heterojunctions were analyzed and compared with the sole heterojunction. Even though the Alq 3 /pentacene sole heterojunction shows a negative threshold voltage shift for programming under negative biasing, light illumination is required to efficiently erase. In contrast, for C 60 /pentacene sole heterojunction, the negative shift of threshold voltage is observed even with a positive erasing voltage. By combining the two trapping layers, a large memory window with fully-electrical programming and erasing is obtained. The efficient programming and erasing of the double heterojunctions structure are analyzed, sufficient electrons can be injected that enables the electrical erasing, and the negative shift of the threshold voltage under positive erasing voltage for the C 60 /pentacene structure is suppressed due to the suppression of the large built-in potential for the sole heterojunction, which can be verified by a large positive shift for the pentacene/C 60 /pentacene double heterojunctions.
研究领域:
材料科学
·
电子工程
·
有机电子学
✓ 已验证
产品关联
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2022
·
IF 5.518
Chunxia Pang,Huanhuan You,Lili Liang,Zhanguo Li,Xiaoyan Lin,Yaping Zhang,Hao Zhang,Xunhai Pan,Yang Hu,Yan Chen,Xuegang Luo,Haijun Wang
Radioactive aerosols in confined spaces of workplaces are the main source of internal radiation hazards for staff. Therefore, biomass-based electret fiber materials as alternatives of petroleum-based polymers will be of great potential in capturing radioactive aerosols due to its biodegradability , renewability and electrostatic effects. Herein, a fabrication strategy of bamboo pulp-based electret fiber aerogels by corona polarization is reported grounded on p-phenylenediamine (PPD)-modified bamboo pulp fibers (BCFs) and ethyl cellulose (EC). The morphology, chemical structure , and physical properties of BCFs before and after modification, as well as the electret properties and purification performance of fiber aerogel were analyzed. The results showed that PPD can be grafted uniformly on the surface of BCFs, making the fibers transform from irregular cylindrical shape with hierarchical surface to regular cylindrical shape with smooth surface, and can improve the surface potential of the fibers, one of the considerably great electret properties, from 0.00 kV to 1.33 kV when the graft amount of PPD was 0.500 g/g. The improvement in surface potential, leading by the grafted PPD structure which is a charge-trapping site confirmed by stoichiometric calculations, enhance the electrostatic trapping effect of the fibers on radioactive aerosol particles and shorten the purification time from 26 min to 15 min. Moreover, the electret fiber aerogel with modified BCFs (named as PPD-DABCFs) has a low air resistance of 56 Pa at the flow speed of 5.3 cm·s −1 , a light base weight of 62.7 g·m −2 and a long service life. Therefore, the bamboo pulp-based electret fiber aerogel has a promising application in the field of radioactive aerogel purification.
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2018
·Vol. 10
·期 31
·14824-14829
·
IF 7.233
Zhe Zhou,Huiwu Mao,Xiangjing Wang,Tao Sun,Qing Chang,Yingying Chen,Fei Xiu,Zhengdong Liu,Juqing Liu,Wei Huang
Building transient and flexible memristors is a promising strategy for developing emerging memory technologies. Here, a transient and flexible memristor based on a polymer nanocomposite, with a configuration of silver nanowire (AgNW)/citric acid quantum dot (CA QD)-polyvinyl pyrrolidone (PVP)/AgNW, is fabricated using a full-solution process method. The obtained device exhibits reversible resistive switching behavior and a dynamic random access memory (DRAM) storage feature, with the significant merits of a high ON/OFF ratio, low switching voltage, excellent reproducibility and desirable high flexibility, indicating outstanding memory characteristics such as low misreading, low power operation and low cost potential. Moreover, an operating mechanism of charge trapping/de-trapping of the quantum dots in the polymer matrix has been proposed. Importantly, the memristor can be disintegrated in water within 30 minutes, showing that it is a promising candidate for transient memories. This work paves a new way for potential use of this material in transient electronics, implanted electronics, data storage security and flexible electronic systems.
研究领域:
材料科学
·
电子工程
·
记忆技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanoscale
·
2024
·Vol. 16
·期 25
·12142-12148
·
IF 5.8
Hua An,Yiyang Li,Yi Ren,Yili Wan,Weigao Wang,Zhenhua Sun,Junwen Zhong,Zhengchun Peng
The application of resistive random-access memory (RRAM) in storage and neuromorphic computing has attracted widespread attention. Benefitting from the quantum effect, transition metal dichalcogenides (TMD) quantum dots (QDs) exhibit distinctive optical and electronic properties, which make them promising candidates for emerging RRAM. Here, we show a high-performance forming-free flexible RRAM based on high-quality tin disulfide (SnS2) QDs prepared by a facile liquid phase method. The RRAM device demonstrates high flexibility with a large on/off ratio of ∼106 and a long retention time of over 3 × 104 s. The excellent switching behavior of the memristor is elucidated by a charge trapping/de-trapping mechanism where the SnS2 QDs act as charge trapping centers. This study is of significance for the understanding and development of TMD QD-based flexible memristors.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY
·
2017
·Vol. 56
·期 5
·505-513
·
IF 2.952
Haiwei Tan,Huaxuan Yu,Ying Song,Shiyang Zhu,Bo Zhang,Hongyan Yao,Shaowei Guan
A series of ferrocene-terminated hyperbranched polyimides (HBPI-Fcs) were synthesized from a tetra-amine, bis(4-(3,5-bis (4-amino-2-(trifluoromethyl) phenoxy) phenoxy) phenyl) methanon, and various dianhydrides, followed by termination with (4-amino) phenyl ferrocene. All the HBPI-Fcs possessed good organo-solubility and high thermal stability. The devices based on HBPI-Fcs exhibited bipolar and nonvolatile write-once-read-many times (WORM) memory performance with various threshold voltages and the same ON/OFF current ratio of 10 4 . Moreover, the devices possessed excellent bistability under a constant bias of −1.00 V during a test period of 10 4 s. The different charge trapping ability of the electron-accepting moiety endowed the devices with different the threshold voltages. Mechanism analysis showed that the switching behavior was dominated by the charge trapping effect and the charge transfer was well fitted with the space-current-limited-current (SCLC) and ohmic model. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56 , 505–513
研究领域:
材料科学
·
高分子化学
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2019
·Vol. 31
·期 16
·1900763
·
IF 25.809
Yuanhong Gao,Ya Yi,Xinwei Wang,Hong Meng,Dangyuan Lei,Xue-Feng Yu,Paul K. Chu,Jia Li
The interfacial charge effect is crucial for high-sensitivity organic phototransistors (OPTs), but conventional layered and hybrid OPTs have a trade-off in balancing the separation, transport, and recombination of photogenerated charges, consequently impacting the device performance. Herein, a novel hybrid-layered phototransistor (HL-OPT) is reported with significantly improved photodetection performance, which takes advantages of both the charge-trapping effect (CTE) and efficient carrier transport. The HL-OPT consisting of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as conduction channel, C8-BTBT:[6,6]-phenyl-C 61 -butyric acid methyl ester (PC 61 BM) bulk heterojunction as photoactive layer, and sandwiched MoO 3 interlayer as a charge-transport interlayer exhibits outstanding photodetection characteristics such as a photosensitivity ( I light / I dark ) of 2.9 × 10 6 , photoresponsivity ( R ) of 8.6 × 10 3 A W −1 , detectivity ( D* ) of 3.4 × 10 14 Jones, and external quantum efficiency of 3 × 10 6 % under weak light illumination of 32 µW cm −2 . The mechanism and strategy described here provide new insights into the design and optimization of high-performance OPTs spanning the ultraviolet and near infrared (NIR) range as well as fundamental issues pertaining to the electronic and photonic properties of the devices.
研究领域:
光电子学
·
有机电子学
·
光电探测器
·
材料科学
·
纳米技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）