ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Yuxiao Fang,Chun Zhao,Ivona Z. Mitrovic,Cezhou Zhao
Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InOx/ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1Oy thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1Oy gate dielectrics exhibited an ultralow flat band-voltage (VFB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InOx/Zr0.9La0.1Oy thin-film transistors (TFTs) exhibited a large Ion/Ioff of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (Dit) of 1 × 1012 cm–2, and a 0.16 V threshold shift (ΔVTH) under 3600 s positive bias-stress (PBS). InOx/Zr0.9La0.1Oy TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V VDD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.
研究领域:
材料科学
·
电子工程
·
辐射物理
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DOI
PubMed
高影响因子
ACS Applied Optical Materials
·
2025
·
IF 3.8
Yan Zhang,Junzhe Wang,Liang Li,Honggang Zhang,Bei Li,Xiangxiang Zhang,Zeyan Wang,Yuanyuan Liu,Peng Wang,Hefeng Cheng,Ying Dai,Baibiao Huang,Zhaoke Zheng
The design of organic–inorganic heterojunctions can facilitate the separation of photoinduced charge carriers by modulating the electronic structure at the surface and interface states, showing promising applications in the field of photocatalytic CO2 cycloaddition. However, the details of the surface/interface effects between these two components are still poorly understood. Herein, Cu2O@Cu3(HHTP)2 (HHTP = 2, 3, 6, 7, 10, 11-hexahydroxytriphenylene) heterojunctions were synthesized, where Cu2O nanoparticles (NPs) featuring distinct crystal facets were utilized as substrates for the in situ growth of the copper-based metal–organic framework (Cu3(HHTP)2). Among them, t-Cu2O@Cu3(HHTP)2, centered on t-Cu2O with {111} and {100} facets, exhibits superior performance toward photocatalytic CO2 cycloaddition to chlorinated propylene carbonate, with a conversion efficiency of 372 mmol g–1 h–1 under light. Notably, single-particle spectroscopy reveals a more efficient photogenerated carrier transfer between t-Cu2O and Cu3(HHTP)2. The results confirm that crystalline facet dependence is a key factor in semiconductor photocatalysis and an important strategy for optimizing the reactivity of photocatalysts, which provides a way to improve the photocatalytic CO2 cycloaddition performance by modulating the interfacial states of organic–inorganic heterojunction structures.
研究领域:
材料科学
·
催化化学
·
物理化学
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产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2017
·
IF 2.764
Chang Liu,Xiang Zhu,Peng Wang,Yisen Zhao,Yongqing Ma
The Fe 3 O 4 @TiO 2 catalyst was reduced in a mixed H 2 /N 2 atmosphere at temperatures of 400, 600, 800 and 1000 °C in order to produce the oxygen vacancies (O v ) and Ti 3+ ; Simultaneously, Fe 3 O 4 was reduced to Fe, a strongly magnetic material, beneficial for the magnetic separation after the photo-degradation. The optimal catalyst was obtained at the reducing temperature of 800 °C, which possesses the good photocatalytic performance and recycled activities; Moreover, its saturation magnetization M s is highest, reaching 23.8 emu g −1 which improves the magnetic separability. This optimal catalyst was subsequently treated in the NH 3 atmosphere at temperatures of 500, 600 and 700 °C, aiming to investigate the effects of N-doping in TiO 2 . The 600 °C treated catalyst exhibited the optimal photocatalytic performance. The factors that affect the photocatalytic performance are revealed and discussed in detail, including the ratio of O v and N dopant in TiO 2 as well as the interface states between TiO 2 and the magnetic particles.
研究领域:
材料科学
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化学工程
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环境科学
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产品关联
DOI
高影响因子
Science Advances
·
2025
·Vol. 11
·期 14
·
IF 12.5
Cong Zhao,Kun Li,Jie Hao,Yanlei Wang,Hongyan He,Chuancheng Jia,Xuefeng Guo
Elucidating the mechanisms of ion-involved interfacial reactions at the single-bond level is important for understanding interface science. Here, the reaction between pyridine ions and protons at the solid-liquid interface is studied in situ using a single-molecule conductance measurement technique. By manipulating the interfacial electrostatic potential, an ion/metal interfacial state relying on electrostatic interactions has been discovered, comprising terminal group-hydrogen-gold in specific. The reversible interfacial protonation reaction mechanism is revealed in situ at the single-bond level based on this interfacial state. Experiment results also indicate that external forces can effectively regulate this ion-involved interfacial reaction. This work provides a single-bond approach for in situ investigations of ion-involved interfacial reactions with an ion/metal interfacial state, thus promoting the development of interface science.
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DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·Vol. 35
·期 34
·2501136
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IF 19
Zhipeng Fu,Chuanyong Jian,Yu Yao,Yixiang Li,Jiashuai Yuan,Qian Cai,Wei Liu
2D semiconductors are widely regarded as the future of highly integrated circuits, but their commercialization is hindered by the lack of suitable gate dielectrics that meet stringent performance and processing requirements. In this study, a novel LiNO₃-assisted Confined Flux Growth (CFG) method is presented that enables the synthesis of high-quality 2D LaOCl nanosheets at remarkably low temperatures (250–350 °C). The synthesized LaOCl not only shows an exciting coexistence of wide bandgap (≈5.54 eV) and high dielectric constant (≈13.8) but also can form high-quality van der Waals interfaces with 2D semiconductors. Compared to traditional methods, the CFG approach significantly reduces thermal budget, providing opportunities for facile integration with the traditional semiconductor industry. Furthermore, the multifunctional application of LaOCl is demonstrated in 2D transistors. The MoS₂ field-effect transistors (FET) gated by LaOCl exhibit excellent gate control (on/off ratio >10⁸) and low interfacial trap density. The floating-gate devices with LaOCl as the tunneling layer show an extremely large storage window (≈91%) and stable storage characteristics. These findings establish 2D LaOCl as a transformative dielectric material, paving the way for next-generation multifunctional 2D electronic devices.
研究领域:
材料科学
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纳米电子学
·
二维材料
·
介电材料
·
半导体器件
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DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2022
·
IF 16.744
Mengwei Tian,Xiangjun Liu,Ao Gong,Shan Zhang,Guangcheng Wang,Pei Han,Yong Li,Xiaojie Lou,Xihong Hao
The utilization of ferroelectric photovoltaic effect is thought to be an effective strategy to design novel self-powered photodetectors. However, the low photocurrent output due to the incompatibility between high intrinsic ferroelectric polarization and narrow bandgap is a major disadvantage that restricts photodetection performances. Here, high-efficiency photodetection properties are achieved in a hexagonal Y 1- x Bi x MnO 3 ferroelectric self-powered photodetector using a multiscale polarity structure optimization strategy. Particularly, the photodetector based on Y 0.95 Bi 0.05 MnO 3 (YBMO5) can work in a wide band ranging from ultraviolet to near infrared with the maximum responsivity and detectivity up to 0.60 A/W and 2.50 × 10 12 Jones, respectively, with the fast response time of only 0.3/0.4 ms, which are superior to the traditional ferroelectric perovskite photodetectors. The excellent photodetection performances originate from the enhanced photocurrent output, owing to simultaneously achieving big light absorption and robust photogenerated carrier separation and transport. It is demonstrated that Bi doping tunes crystal lattice , domain structure and the interface state, which effectively enhance macroscopic polarity in the condition of nearly unchanged bandgap. Moreover, a denser conductance network of grain boundary is constructed by decreasing grain size, which provides more transport paths for the photogenerated carriers. This work opens up a promising route for the design of high-performance ferroelectric photodetectors.
研究领域:
材料科学
·
光子学
·
电气工程
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产品关联
DOI
高影响因子
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