CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Zhe Zhu,Zhonghua Yao,Xinhui Li,Rui Zhao,Ruiling Chang,Hua Hao,Minghe Cao,Hanxing Liu
The quenching process is investigated to modulate domain structures behaviors in three ceramic compositions: lead zirconate titanate with a 75/25 zirconium titanium ratio (75/25PZT), Mn-doped (Mn-75/25PZT) and Nb-doped (Nb-75/25PZT). Piezoresponse force microscopy (PFM) demonstrates a transformation of domain structures from micron to nanoscale, accompanied by increased domain walls (DWs) density. In-situ Raman spectroscopy detects a softening of the E (TO1) vibration mode after quenching, indicating lower DWs energy density and higher internal stress. Furthermore, both 75/25PZT and Mn-75/25PZT demonstrate the release of pinched hysteresis loops, coupled with substantial enhancements in piezoelectric coefficients of 36 % and 37 %, respectively. Additionally, both reversible and irreversible dielectric responses are augmented through quenching. This investigation provides detailed insights into the evolution of domains during the quenching process in these ceramic systems.
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DOI
高影响因子
ADVANCED MATERIALS
·
2025
·Vol. 37
·期 27
·2420505
·
IF 26.8
Xin Gao,Kaiming Wang,Kun Zhai,Junxin Yan,Dongdong Yue,Congpu Mu,Zhipeng Yu,Yingchun Cheng,Anmin Nie,Zhongyuan Liu
Emergent magnetism in 2D materials has attracted significant attention due to their intrinsic magnetic order, which persists down to the monolayer limit, and their potential applications in spintronic devices. In particular, domain structure modulation plays a crucial role in 2D magnet-based nano-spintronic devices. However, the fabrication and modulation of the desired domain structure, along with the establishment of reliable electrical write/read operations, remain significant challenges. Herein, a unique structure-shaping way to modulate domain structure is demonstrated via folding a continuous flat Fe 3 GaTe 2 nanosheet. Accompanied by magnetic domain structure transformation, the symmetric butterfly-shaped magnetoresistance (MR) curve changes to an antisymmetric field-dependent magnetoresistance. Notably, the MR exhibits either the same or opposite sign at geometrically equivalent positions, depending on the relative angle of the current flow and domain wall direction. The MR behavior with respect to sweeping field and electrodes position is due to the circulating current in the vicinity of the domain wall. More importantly, this new concept of manipulating domain structure and its associated magneto-transport behavior can inspire novel spintronic devices fabrication and application.
研究领域:
凝聚态物理
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材料科学
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自旋电子学
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纳米电子学
·
磁性
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DOI
PubMed
高影响因子
ACS Nano
·
2025
·
IF 16
Yanyan Geng,Haoyu Dong,Renhong Wang,Jianfeng Guo,Shuo Mi,Le Lei,Yan Li,Li Huang,Fei Pang,Rui Xu,Weiqiang Yu,Hong-Jun Gao,Wei Ji,Weichang Zhou,Zhihai Cheng
The delicate interplay among the complex intra/inter-layer electron–electron and electron–lattice interactions is the fundamental prerequisite of these exotic quantum states, such as superconductivity, nematic order, and checkerboard charge order. Here, we explore the filling-dependent multiple stable intertwined electronic and atomic orders of the flat-band state of 1T-TaS2 encompassing hole order, phase orders, coexisting left- and right-chiral orders, and mixed phase/chiral orders via scanning tunneling microscopy (STM). Combining first-principles calculations, the emergent electronic/atomic orders can be attributed to the weakening of electron–electron correlations and stacking-dependent interlayer interactions. Moreover, achiral intermediate ring-like clusters and nematic charge density wave (CDW) states are successfully realized in intralayer chiral domain wall and interlayer heterochiral stacking regions through chiral overlap configurations. Our study not only deepens the understanding of filling-dependent electronic/atomic orders in flat-band systems but also offers perspectives for exploring exotic quantum states in correlated electronic systems.
研究领域:
凝聚态物理
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强关联电子系统
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量子材料
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表面科学
·
电子结构理论
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DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 35
·期 19
·2209346
·
IF 29.4
Yao Wen,Shiheng Liang,Zhuo Dong,Ruiqing Cheng,Lei Yin,Peng He,Hao Wang,Baoxing Zhai,Yang Zhao,Wendi Li,Jian Jiang,Zhongwei Li,Chuansheng Liu,Kaifeng Dong,Jun He,Kai Zhang
2D ferromagnetic chromium tellurides exhibit intriguing spin configurations and high-temperature intrinsic ferromagnetism, providing unprecedented opportunities to explore the fundamental spin physics and build spintronic devices. Here, a generic van der Waals epitaxial approach is developed to synthesize the 2D ternary chromium tellurium compounds with thicknesses down to mono-, bi-, tri-, and few-unit cells (UC). The Mn 0.14 Cr 0.86 Te evolves from intrinsic ferromagnetic behavior in bi-UC, tri-UC, and few-UC to temperature-induced ferrimagnetic behavior as the thickness increases, resulting in a sign reversal of the anomalous Hall resistance. Temperature- and thickness-tunable labyrinthine-domain ferromagnetic behaviors are derived from the dipolar interactions in Fe 0.26 Cr 0.74 Te and Co 0.40 Cr 0.60 Te. Furthermore, the dipolar-interaction-induced stripe domain and field-induced domain wall (DW) motion velocity are studied, and multibit data storage is realized through an abundant DW state. The magnetic storage can function in neuromorphic computing tasks, and the pattern recognition accuracy can reach up to 97.93%, which is similar to the recognition accuracy of ideal software-based training (98.28%). Room-temperature ferromagnetic chromium tellurium compounds with intriguing spin configurations can significantly promote the exploration of the processing, sensing, and storage based on 2D magnetic systems.
研究领域:
自旋电子学
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凝聚态物理
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材料科学
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纳米磁性
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二维材料
·
神经形态工程
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DOI
高影响因子
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