CRYSTENGCOMM
·
2023
·Vol. 25
·期 44
·6162-6170
·
IF 3.1
Shuai Wen,Huan Liu,Lier Deng,Jijie Zhao,Yuxuan Du,Shengyong Wang,Fei Gao,Zhipeng Zhu,Fei Xie,Weiguo Liu
Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.
研究领域:
光学工程
·
材料科学
·
电子器件
✓ 已验证
DOI
高影响因子
ACS Nano
·
2024
·
IF 15.8
Zhenyang Liu,Chaoqi Hao,Yejing Liu,Rongzhen Wu,Jianen Zhang,Zhuo Chen,Fenghe Wang,Li Guan,Xu Li,Aiwei Tang,Ou Chen
Short-wave infrared (SWIR) light-emitting diodes (LEDs) have emerged as promising technologies for diverse applications such as optical communication, biomedical imaging, surveillance, and machine vision. Colloidal quantum dots (QDs) are particularly attractive for SWIR LEDs due to their solution processability, compatibility with flexible substrates, and tunable absorption and luminescence. However, the presence of toxic elements or precious metals in most SWIR-emitting QDs poses health, environmental, and cost challenges. In this context, CuInS2 (CIS) QDs are known for low toxicity, cost-effective fabrication, and SWIR-light emitting capability. However, CIS QDs have not yet been directly utilized to fabricate SWIR LEDs to date, which is due to low particle stability, inefficient charge carrier recombination, and significantly blue-shifted luminescence after integrating into LED devices. To address challenges, we propose a dual-passivation strategy using ZnI2 as a chemical additive to enhance both the optical property of plain CIS QDs and charge carrier recombination upon LED device implementation. The resulting CIS-QD-based LEDs exhibit a stable SWIR electroluminescence (EL) peak (over 1000 nm) with a high EL radiance and a record external quantum efficiency in the SWIR region. Our study represents a significant step forward in SWIR-QLED technology, offering a pathway for the development of high-performance, low-cost, and nontoxic SWIR light sources.
研究领域:
材料科学
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光电子学
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纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Science Advances
·
2025
·Vol. 11
·期 20
·
IF 12.5
Gongyuan Zhang,Tom Albrow-Owen,Wenjun Peng,Xin Liang,Xianming Zhang,Pan Wang,Dawei Di,Shurong Dong,Jikui Luo,Guo Wang,Hongfeng Mu,Qian Zhao,Xuhan Guo,Qi Jie Wang,Tawfique Hasan,Zongyin Yang
The evolution of miniaturized spectroscopic tools is pivotal for expanding the application of spectral data across scientific, industrial, and consumer domains. Recent advancements in computationally augmented systems have dramatically reduced device form factors toward those compatible with consumer tech integration. However, for a commercial reality, most applications demand operation across visible to short-wave infrared (SWIR) range. In this regard, existing miniaturized devices are either constrained by physical properties; use complex, costly, or unscalable fabrication techniques; or require multiple components to address separate parts of the spectrum. Here, we report on a low-cost, visible to SWIR, miniaturized spectrometer design enabled by a mass-producible, nonlithographic method of engineering planar dispersive elements from widely available plastics. By deforming shape memory epoxies, we encode spectral information, which is processed by a complementary metal oxide semiconductor sensor array and reconstructed via algorithms. This design offers broadband capability from 400 to 1600 nanometers and enables line-scanning spectral imaging, paving the way for affordable spectrometers.
研究领域:
光学工程
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材料科学
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计算机科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
DALTON TRANSACTIONS
·
2024
·Vol. 53
·期 9
·4214-4221
·
IF 3.5
Geng Chen,Lifang Yuan,Chaoyue Peng,Haoyi Wu,Yahong Jin
Recently, short-wave infrared (SWIR) phosphor-converted light-emitting diodes (pc-LEDs) have garnered increased attention due to their widespread applications in night vision, biological imaging, and non-destructive testing. Nevertheless, the currently used SWIR phosphors suffer from poor thermal stability and low quantum efficiency. In this study, a finely tuned spinel-based solid solution, Mg0.5Zn0.5Ga2O4, is prepared to host Ni2+ to induce SWIR emission. Cr3+ is codoped as a sensitizer to bridge Cr3+ and Ni2+ ions, significantly enhancing blue light absorption and facilitating energy transfer (ET) to Ni2+ ions. The champion SWIR phosphor exhibits a broadband emission centered at 1304 nm with a full width at half maximum (FWHM) of 250 nm, achieving a near-unity internal quantum efficiency (IQE = 97.7%) and a good thermal stability (70.7%@423 K). The fabricated SWIR pc-LED device delivers a high SWIR output power of 39.9 mW at 360 mA, enabling its application in non-destructive imaging and testing.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Light-Science & Applications
·
2022
·Vol. 11
·期 1
·1-12
·
IF 20.257
Zhang Yan,Miao Shihai,Liang Yanjie,Liang Chao,Chen Dongxun,Shan Xihui,Sun Kangning,Wang Xiao-Jun
The growing demand for spectroscopy applications in the areas of agriculture, retail and healthcare has led to extensive research on infrared light sources. The ability of phosphors to absorb blue light from commercial LED and convert the excitation energy into long-wavelength infrared luminescence is crucial for the design of cost-effective and high-performance phosphor-converted infrared LEDs. However, the lack of ideal blue-pumped short-wave infrared (SWIR) phosphors with an emission peak longer than 900 nm greatly limits the development of SWIR LEDs using light converter technology. Here we have developed a series of SWIR-emitting materials with high luminescence efficiency and excellent thermal stability by co-doping Cr 3+ -Yb 3+ ion pairs into Lu 0.2 Sc 0.8 BO 3 host materials. Benefitting from strong light absorption of Cr 3+ in the blue waveband and very efficient Cr 3+ →Yb 3+ energy transfer, the as-synthesized Lu 0.2 Sc 0.8 BO 3 :Cr 3+ ,Yb 3+ phosphor emits intense SWIR light in the 900–1200 nm from Yb 3+ under excitation with blue light at ~460 nm. The optimized phosphor presents an internal quantum yield of 73.6% and the SWIR luminescence intensity at 100 °C can still keep 88.4% of the starting value at 25 °C. SWIR LED prototype device based on Lu 0.2 Sc 0.8 BO 3 :Cr 3+ ,Yb 3+ phosphor exhibits exceptional luminescence performance, delivering SWIR radiant power of 18.4 mW with 9.3% of blue-to-SWIR power conversion efficiency and 5.0% of electricity-to-SWIR light energy conversion efficiency at 120 mA driving current. Moreover, under the illumination of high-power SWIR LED, covert information identification and night vision lighting have been realized, demonstrating a very bright prospect for practical applications.
研究领域:
光学材料
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固态照明
·
红外光谱学
·
发光二极管技术
·
光转换材料
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2024
·
IF 8
Zhixiang Jiang,Yuanhong Gao,Wei Hui,Yang Feng,Meili Xu,Jinxiong Li,Feng Jiang,Xiaopeng Zhang,Jianing Wang,Hong Meng,Wei Huang
Lead sulfide colloid quantum dots (PbS QDs) offer great opportunities to revolutionize large-area short-wave infrared (SWIR) detection technologies due to high absorption coefficients and spectral selectivity. However, a critical issue for QDs-based SWIR detectors is high dark current noise due to thermal carriers and the large amounts of surface defect states induced by the ligand exchange process, which hinders the improvement of the room temperature detectivity and linear dynamic range. Herein, it is demonstrated that these dilemmas can be overcome by adopting a novel hybrid-layered phototransistor device architecture composed of a self-assembly high-mobility organic conduction channel and a bulk heterojunction infrared absorber containing PbS QDs as sensitizers. Strong photo absorption in the photoactive layer creates photogenerated charges that are transferred to the conduction channel, where they recirculate many times due to the long trapped-electron lifetime in the photoactive layer and the high carrier mobility of the channel. Therefore, low dark current noise and high photoconductive gain are achieved by both electrical gating and photodoping for carrier-density modulation of phototransistors. Finally, an optimized SWIR phototransistor device with a low room-temperature dark current of 7 pA and a high detectivity of 8 × 10 12 Jones under 1650 nm light illumination is demonstrated.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
InfoMat
·
2023
·
IF 22.7
Peilin Liu,Shuaicheng Lu,Jing Liu,Bing Xia,Gaoyuan Yang,Mo Ke,Xuezhi Zhao,Junrui Yang,Yuxuan Liu,Ciyu Ge,Guijie Liang,Wei Chen,Xinzheng Lan,Jianbing Zhang,Liang Gao,Jiang Tang
Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon-based readout integrated circuits (ROICs) offer a promising solution for the next-generation short-wave infrared (SWIR) imaging technology. Despite their potential, large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non-passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate (100) facets of halide-capped large-size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm −2 at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W −1 ) and a specific detectivity of 2.5 × 10 12 Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high-resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination.
研究领域:
材料科学
·
光电技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2023
·
IF 3.7
Cheng Li,Peigeng Han,Wei Zhou,Xiaochen Wang,Zhiling Ding,Zhongyi Wang,Yang Yu,Ruifeng Lu
Lead-free halide double perovskite (DP) nanocrystals (NCs) have been regarded as a class of environmentally friendly and promising optoelectronic nanomaterials. Herein, we report the synthesis and luminescence properties of all-inorganic lanthanide/bismuth (Ln3+/Bi3+)-codoped Cs2NaInCl6 DP NCs. Yb/Er-codoped Cs2NaInCl6 NCs show upconversion (UC) and downshifting short-wave infrared (SWIR) photoluminescence (PL). By further introducing Bi3+ ions into the host, both UC and SWIR PL can be significantly enhanced, which are 2 orders of magnitude higher than those of Bi-free DP NCs. This is mainly due to the excellent synergy between the lanthanide and bismuth dopants and the high compatibility of these dopants with the Cs2NaInCl6 host. This work will help to guide the design and development of novel highly efficient luminescent nanomaterials.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
Laser & Photonics Reviews
·
2025
·
IF 10
Chunxuan Chen,Xiaozhou Zheng,Wanyuan Li,Wubin Dai
NIR phosphors based on commercial LED pumping are gained great concerns. However, blue excitation and lack of broadband NIR phosphors are still obstacles. Herein, NIR-II emitting ZnGa 2 O 4 : Fe 3+ , Ni 2+ with autologous defects are designed. Self-PL is associated with intrinsic defects including [GaO 6 ], antisite defects ( G a Z n · $Ga_{Zn}^ \cdot $ ) and oxygen defects ( O i ). Based on efficient energy transfer, ZGO: Fe 3+ , Ni 2+ exhibits broadband NIR-II emission. To improve PL efficiency of Fe 3+ , an oxygen defects repairing engineering via anionic F − -substitution artifice is executed, resulting in high PL quantum efficiency of ≈64.6% and splendid thermal stability (≈75.5%@423K) for ZGOF: Fe 3+ , Ni 2+ . The reduction in local site symmetry after F-substitution splits energy states of Fe 3+ in purely octahedral crystal field also helps to relief the Laporte selection rule and widens excitation/PL spectra with high efficiency. A NIR-II phosphor-converted LED (pc-LED) by combination of ZGOF: Fe 3+ , Ni 2+ and a n UV LED chip via remote ʻcappingʼ packaging strategy with high radiant power is fabricated and its versatile applications in night vision, non-destructive detection, food analysis and optical pressure sensing are demonstrated. This study paves a feasible way to realize high-quality NIR phosphor and its corresponding device for wide applications.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2025
·
IF 4.7
Peng Dai,Zhixuan Wang,Zhiyong Tang,Ziyan Zhang,Yanong Wang,Xiaoyu Yang,Jiang Jiang,Yejun Zhang,Hongchao Yang
Recently, silver telluride (Ag2Te) colloidal quantum dots (QDs) have garnered significant attention in short-wave-infrared (SWIR) photodetection owing to their strong SWIR responsivity and environmental benignity. However, the SWIR Ag2Te QDs often suffer from their high defect density, leading to an unsatisfactory utilization efficiency of the photogenerated charge carriers. To address this challenge, here, we have developed bismuth-doped Ag2Te (Bi:Ag2Te) QDs via a hot-injection doping method. The Bi doping effectively suppresses the trap states and modulates the energy band structure of the QDs. Then, the as-prepared Bi:Ag2Te QDs were applied in photodiodes, which exhibits outstanding detective performance in the SWIR range with high external quantum efficiencies of 11.2% and 30% under 0 and 0.3 V bias, respectively, and a specific detectivity (D*) of 7.67 × 1010 Jones at 1460 nm under ambient conditions. This study not only introduces novel QDs for high-performance SWIR photodetectors but also offers a critical reference for modulating the optoelectronic properties of QDs through doping strategies.
研究领域:
材料科学
·
光学工程
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2024
·
IF 8
Ruiqi Shi,Shihai Miao,Xulong Lv,Dongxun Chen,Yi Zhang,Yanjie Liang
The utilization of phosphor-converted light-emitting diodes (pc-LEDs) as compact short-wave infrared (SWIR) emitters has emerged as a promising strategy for miniature SWIR spectrometers in portable devices, enabling diverse applications such as nondestructive identification, bioimaging, night-vision surveillance, and optical communication. However, discovering phosphors capable of efficiently absorbing blue light and emitting pure SWIR light (>900 nm) remains a significant challenge. Here, highly efficient and thermally stable SWIR luminescence of Yb 3+ upon blue LED excitation by employing Cr 3+ –Yb 3+ energy transfer in Y 3 Ga 5 O 12 garnet is reported. The prepared Y 3 Ga 5 O 12 :Cr 3+ ,Yb 3+ phosphor exhibits intense SWIR emission spanning from 900 to 1150 nm at 438 nm excitation, coupled with ultra-high internal/external quantum efficiency of 80.8%/40.2% and excellent luminescence thermal stability (108%@150 °C). A SWIR pc-LED prototype fabricated by incorporating the optimized phosphor with a commercial 450 nm blue LED chip, shows exceptional SWIR luminescence performance, delivering a SWIR output power of 92.7 mW at a driving current of 350 mA and a photoelectric efficiency of 21.5% at 10 mA. This work opens up a new avenue for designing SWIR phosphors that exhibit efficient and thermally stable photoluminescence with blue LED excitation, demonstrating significant potential for next-generation high-power compact SWIR light sources.
研究领域:
材料科学
·
光学工程
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Technologies
·
2022
·Vol. 7
·期 11
·2200320
·
IF 8.856
Shihai Miao,Yanjie Liang,Yan Zhang,Dongxun Chen,Xiao-Jun Wang
Blue light-emitting diode (LED) pumped short-wave infrared (SWIR; 900–1700 nm) emitters are providing new solutions in the design of portable and cost-effective infrared light sources for medical, surveillance, and spectroscopy applications by taking advantage of converter technology. However, desirable blue-light-excitable SWIR-emitting phosphors with a peak wavelength longer than 1000 nm are lacking. Herein, a promising broadband SWIR phosphor is designed and developed by incorporating Cr 3+ -Ni 2+ ion pairs into LiMgPO 4 host. Upon 450 nm blue light excitation, the as-synthesized LiMgPO 4 :Cr 3+ ,Ni 2+ phosphor exhibits a broad and intense SWIR emission spanning from 1100–1600 nm with peak wavelength at 1380 nm and a full width at half maximum of 273 nm due to the efficient energy transfer from Cr 3+ to Ni 2+ . Moreover, phosphor-converted SWIR LED prototype device based on the combination of 450 nm blue LED chip and the optimized phosphor is fabricated as a new type of broadband illuminator covering the SWIR waveband, delivering a maximum radiant power of ≈2.7 mW at 120 mA driving current. Benefiting from the distinct spectral characteristics of SWIR light, the practical relevance of the fabricated SWIR illuminator is demonstrated in covert information identification and night vision lighting.
研究领域:
材料科学
·
光学工程
·
光电子技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）