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OPTICS EXPRESS · 2022 ·Vol. 30 ·期 23 ·41554-41566 · IF 3.833

Silicon-photonics-based waveguide Bragg grating sensor for blood glucose monitoring

Hongqiang Li,Zhiyue Zhu,Wentao Meng,Lu Cao,Yingjie Wang,Zhilin Lin,Enbang Li,Joan Daniel Prades

We demonstrated the design of two different structures, a two-sided structure and a top-surface structure, of glucose waveguide Bragg grating (WBG) sensors in a single-mode silicon-on-insulator (SOI) chip. A two-sided WBG structure was fabricated, and chip preparation was realized by lithography and other processes. A photonic platform for testing the two-sided WBG using glucose was built and completed. When the blood glucose concentration changed by 1 mg/mL, the two-sided WBG had a wavelength offset of 78 pm. The experimental results show that the two structures can achieve the sensing of different blood glucose concentrations. The two-sided WBG had better sensing performance and thus has a wide range of application prospects.

CAS / MDL: 6066-82-6

研究领域: 生物医学工程 · 光学传感 · 医疗设备

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Laser & Photonics Reviews · 2025 ·Vol. 19 ·期 12 ·2402164 · IF 10

Highly Bright Silicon Nanocrystal White Light-Emitting Diodes With Luminance in Excess of 10000 cd m⁻2

Fengyang Ma,Kaixin Liu,Zhongyao Yan,Liang Yu,Yanru Yang,Wuyan Zhao,Feilong Wang,Yaohua Li,Shuyu Zhang,Songyou Wang,Jian Sun,Ming Lu

Silicon (Si) light source has profound significance in monolithic integrated Si photonics. However, its luminance remains too low to meet practical use that usually requires > 10000 cd m⁻ 2 . Here, an all-inorganic Si nanocrystal (SiNC) white light-emitting diode (WLED) with a continuous emission spectrum spanning ≈400–900 nm in wavelength, is reported. The architecture of the WLED comprises front electrode of Ag grids and transparent-conducting-oxide/electron transport layer (ETL) of ZnO/front charge confinement layer (CCL) of SiO 2 /active layer of low-resistivity SiNC composite thin film/rear CCL of SiO 2 /hole transport layer (HTL) of MoO 3 /textured p-Si substrate/rear electrode of aluminum/heat radiator. The main procedures for achieving high luminance here include combined applications of high-pressure ammonia passivation of the active layer, which enhances its photoluminescence quantum yield significantly, and texturing of p-Si substrate, which boosts the light extraction and charge injection effectively. With an optimized combination of passivation and texturing, luminance of 10751 cd m⁻ 2 is achieved with external quantum efficiency (EQE) of 0.26%. After a Peltier cooler is further applied, luminance of 12363 cd m⁻ 2 is attained with EQE of 0.30%. Following further technical iterations, this highly bright SiNC WLED shall find applications in monolithic integrated Si photonics and even Si general lighting.

CAS / MDL: 7664-39-3

研究领域: 材料科学 · 光学 · 电子工程

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Silicon-photonics-based waveguide Bragg grating sensor for blood glucose monitoring

Highly Bright Silicon Nanocrystal White Light-Emitting Diodes With Luminance in Excess of 10000 cd m⁻2