COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
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2024
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IF 4.9
Ke Li,Qifei Xia,Lei Jin,Rongbin Xu,Yi Zhong,Daquan Yu
Leveler additives for Cu electrodeposition are critical for achieving bottom-up filling in micrometer scale and high aspect ratio (AR) through-silicon vias (TSVs). This study explores a highly effective imidazolium-based leveler electroplating formulation, which successfully achieves void-free filling of TSVs with a diameter of 3 μm and a depth of 45 μm (with an ultra-high AR of 15:1). Molecular dynamics simulations reveal that the leveler, 1,2-dimethyl-3-propylimidazolium iodide (DMPII), demonstrates a strong adsorption effect on the Cu surface. Electrochemical tests show that DMPII enhances the inhibitory effect of polyethylene glycol (PEG) while simultaneously amplifying the accelerating effect of bis-(sodium sulfopropyl)-disulfide (SPS). The complex interplay among these additives ultimately leads to a significant inhibitory effect on the electrochemical reduction of Cu ions at the TSV sidewalls, while promoting deposition at the bottom of the TSV. Furthermore, minimal impurities are detected in the electroplated Cu layer. These findings suggest that this DMPII-based electroplating formulation holds significant promise for the fabrication of ultra-high AR TSVs to enable future high-density 3D integration.
研究领域:
材料科学
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微电子工程
✓ 已验证
产品关联
DOI
高影响因子
VACUUM
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2023
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IF 4
Luobin Zhang,Jintao Wang,Sheng Zhou,Xiaojia Luo,Yufeng Li
This research is an attempt to apply the silver thick-film metallization and the soft soldering process to the ultra-high vacuum packaging of atom chips with through silicon via (TSV). During the packaging process, a vacuum environment is used to avoid oxidation of the Cu layer on the chip during heating. At the same time, tin foil is used to protect the inner wall of the glass cell to prevent the gas emitted by the solder from polluting the inner wall. In general, by the adoption of screen printing, sintered surface metallization at a constant temperature of 450–500 °C for 5 min, combined with soft soldering, the packaging of an atom chip with TSV and a silica glass cell is realized. The weld gap is less than 50 μm, the airtightness can reach 8.5 × 10 −13 Pa m 3 /s, and the vacuum degree can reach 2.18 × 10 −8 Pa. That can meet the requirements of cold atom experiment for light path and vacuum degree.
研究领域:
材料科学
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物理学
✓ 已验证
产品关联
DOI
高影响因子
MICROELECTRONIC ENGINEERING
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2021
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IF 2.523
Fuliang Wang,Yuhang Tian,Kang Zhou,Rui Yang,Tian Tan,Yan Wang,Wenhao Yao
Through silicon via (TSV) is a promising interconnect technology in three-dimensional (3D) integration which has large packing density, improves efficiency and consumes less energy. Since the optimization process of multi-additives system is complicated to achieve void-free TSV copper filling, the use of a single additive become a new trend. In this paper, the using of a triblock copolymer ethylene oxide (EO) - propylene oxide (PO) - ethylene oxide (EO) as a single additive in TSV copper electrodeposition was investigated. High and low concentration of EPE (0.02 g/L and 0.002 g/L) were used for the filling experiment at different current densities. It was found that low concentration EPE had stronger inhibition ability, and achieved “V shape” filling at 0.3 ASD (A/dm 2 ). However, EPE of high concentration would form micelles in electrolyte, resulting in the decrease of inhibition ability. We proposed a mechanism for the different EPE concentrations to explan the phenomenon. In addition, the effect of ultrasonic agitation on EPE filling performance was investigated. With the ultrasonic agitation , bottom-up filling can be achieved at 0.02 g/L, and filling rates can be increased at 0.002 g/L. This can be attributed to the cavitation of the ultrasound which can promote the mass transfer and clean the activated electrode.
研究领域:
材料科学
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电子工程
✓ 已验证
DOI
高影响因子
Materials Science and Engineering B-Advanced Functional Solid-State Materials
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2025
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IF 4.6
Zhe Liang,Ru Wang,Yu Zhu,Xuhua Chen,Zhanjie Du,Tao Zheng,Yanwei Dong,Yang Chen,Peng Yang,Yunhui Shi
Polishing of Ta barrier layer by through-silicon-via (TSV) has a low removal rate. Large particles with diameters greater than 0.5 μm tend to form in the slurry, which complicates the achievement of an atomic-level planarized wafer surface during chemical mechanical polishing (CMP) while also maintaining a high removal rate of Ta. To address this challenge, this paper developed a novel environmentally friendly surfactant for the Ta barrier layer polishing, composed of carrageenan (CG) and polyvinyl pyrrolidone (PVP). By contact angle measurement, electrochemistry, XPS, FESEM, slurry Zeta potential stability and particle size test, the synergistic mechanism of carrageenan and polyvinyl pyrrolidone was analyzed, and the comparative analysis of the surface quality of Cu and Ta was conducted after CMP under varying conditions. The findings reveal that slurry’s composition was modified by the addition of CG and PVP, the removal rate ratio of Ta to Cu achieves a 2:1 ratio under the conditions of 10 wt% SiO 2 , 0.3 wt% H 2 O 2 , 1.5 wt% guanidine phosphate (GP) and pH 9, surface roughness indicators, including Sq and Ra, of Cu and Ta both reach sub-nm level. The surface non-uniformity of Cu and Ta decreased to 1.7 % and 1.8 %. This indicates that the synergistic effect of CG and PVP in the slurry can obtain a better wafer surface while ensuring a high level of Ta removal efficiency.
研究领域:
材料科学
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化学工程
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微电子学
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表面工程
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）