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Small · 2024 ·Vol. 21 ·期 1 ·2403051 · IF 13

Rapid Thermal-Driven Crystal Growth and Defect Suppression in Antimony Selenide Thin Film for Efficient Solar Cells

Yandi Luo,Hongli Ma,Nafees Ahmad,Usman Ali Shah,Zhuanghao Zheng,Shuo Chen,Zhenghua Su,Jun Zhao,Xianghua Zhang,Guangxing Liang

Antimony selenide (Sb 2 Se 3 ) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb 2 Se 3 . The defects originating from this process significantly impact the quality of the absorber layer, leading to the degradation in the power conversion efficiency (PCE) of the device. Herein, the evolution of pre-selenization using rapid thermal processing (RTP) on the crystallization quality of Sb 2 Se 3 film is systematically investigated. By optimizing the initial nucleation process during pre-selenization, resulting in a reduction of grain boundaries and nucleation centers, the Sb 2 Se 3 thin films demonstrate enhanced crystallinity and pinholes-free morphology. It is found that the improved quality of the grain interior and interfaces of the Sb 2 Se 3 absorber can mitigate intrinsic defects within the bulk layer, and passivate interfacial defect recombination. As a result, the short circuit current density ( J SC ) is elevated to 28.97 mA cm −2 , and a competitive efficiency of 9.03% is achieved in Sb 2 Se 3 device. This study provides comprehensive insight into the process of crystal growth and the mechanism for defect suppression, which holds guiding significance for advancing photovoltaic performance.

研究领域: 材料科学 · 光伏技术 · 半导体物理 · 薄膜制备 · 凝聚态物理 · 能源材料
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ACS Applied Materials & Interfaces · 2025 · IF 8.2

Improving the Operational Stability of the Sb2Se3-Based Self-Powered Photodetector via Interfacial Engineering

Jianpeng Li,Wei Cheng,Zixiu Cao,Jiabin Dong,Genyu Hu,Rutao Meng,Xuejun Xu,Chuanyu Liu,Han Xu,Zhanpeng Zhang,Xu Wu,Li Wu,Yi Zhang

Originating from photovoltaic devices, self-powered photodetectors (SPPDs) have low power consumption and show promising applications in photoelectric imaging and optical communications. Many efforts have been devoted to improving their photodetection performances, including responsivity, detectivity, and response time. However, work on their operational stability, one of the key parameters of applied PDs, is still rare. Here, using an interfacial engineering method, we improve the operational stability of the representative Sb2Se3-based SPPD. The Sb2O3 modification layer is applied at the interface between the Sb2Se3 and TiO2 layers and characterized systematically. With the optimized fabrication of the Sb2O3 layer, the operational stability under both air ambient and underwater conditions is significantly enhanced. Moreover, the performances of the SPPD, including responsivity, detectivity, and response time, are improved to 0.45 A/W, 2.70 × 1013 Jones, and 81.5/75.0 ns, respectively. Specifically, without encapsulation, the photoresponse and key photodetection parameters of the devices vary by only around ten percent after working underwater. Our work provides a facile and effective way to modify the interfacial properties of the Sb2Se3 heterostructure and improve the operational stability of the SPPD.

CAS / MDL: 1315-05-5
研究领域: 材料科学 · 光电子学 · 纳米技术
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NEW JOURNAL OF CHEMISTRY · 2019 ·Vol. 43 ·期 8 ·3350-3356 · IF 3.069

Investigation on two new antimony-based quaternary chalcogenides: Na6CdSb4S10 and Na3CdSbSe4

Yi Huang,Xiaowen Wu,Sadeh Beysen

Two new quaternary chalcogenides, Na6CdSb4S10 and Na3CdSbSe4, were successfully synthesized by the high-temperature solid-state reaction in vacuum-sealed silica tubes. Note that Na6CdSb4S10 crystallizes in the C2/c space group, whereas Na3CdSbSe4 crystallizes in the P21/c space group. As seen from their structures, Na6CdSb4S10 exhibits a three-dimensional (3D) framework structure composed by the interconnection of isolated [(Cd/Sb)2Sb2S10] clusters and two different layers formed by the NaSn (n = 4, 6) units; besides, the structure of Na3CdSbSe4 is composed of isolated ∞(Cd3Sb2Se12)n chains and 2D layers formed by the NaSen (n = 5, 6) units. Their optical performances (bandgap and Raman spectra) were also investigated. Moreover, theoretical calculation was used to analyze the structure–performance relationship of Na3CdSbSe4.

研究领域: 材料科学 · 化学
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Solar RRL · 2021 ·Vol. 6 ·期 4 ·2101017 · IF 8.582

Efficient All-Inorganic Sb2S3 Solar Cells with Matched Energy Levels Using Sb2Se3 as Hole Transport Layers

Hui Deng,Siwei Chen,Muhammad Ishaq,Yingshun Cheng,Quanzhen Sun,Xiao Lin,Qiao Zheng,Caixia Zhang,Shuying Cheng

Sb 2 S 3 has emerged as a promising light-absorbing material due to its nontoxicity, low cost, high stability, and absorption coefficient. However, the absorption spectrum ranges and back-contact barrier between Sb 2 S 3 and Au strongly limit the device performance. p-type Sb 2 Se 3 has a similar lattice structure and properties as Sb 2 S 3 , obtaining absorption expansion and ohmic back contact. Herein, efficient all-inorganic planar Sb 2 S 3 solar cells with the addition of Sb 2 Se 3 layers are fabricated. The functions of Sb 2 Se 3 as cooperative absorber (400 nm) and hole transport layers (HTL, 80 nm) are further explored. Systematic characterizations indicate that the junction quality and depletion widths of the device with the addition of Sb 2 Se 3 are improved by forming a p–i–n structure. As a result, the all-inorganic Sb 2 S 3 solar cell with a Sb 2 Se 3 HTL greatly increases the power conversion efficiency from 2.7% to 5.8% and the fill factor from 40% to 55.4%. The additional Sb 2 Se 3 /Au interface with matched energy-level alignments reduces the back-contact barrier and facilitates hole transport and collection. The present design and methods promote the development of Sb 2 S 3 solar cells.

CAS / MDL: 1345-04-6 1315-05-5
研究领域: 材料科学 · 光伏技术
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MATERIALS CHEMISTRY AND PHYSICS · 2023 · IF 4.6

High-efficiency Sb2Se3 thin-film solar cells based on Cd(S,O) buffer layers prepared via spin-coating

Jiang Cheng,Zhen Zhang,Minghao Zhao,Youwei Guan,Xihao Chen,Xiang Meng,Hua Tang,Lu Li,Shenghao Wang

CdS films prepared via chemical bath deposition exhibit extremely good performance as a buffer layer of chalcogenide solar cells. However, their commercial application is very limited because of the production of a large amount of wastewater containing cadmium. In this study, we develop an efficient way to prepare CdS films using the spin-coating technique. The spin solution is anhydrous, and the oxygen content can be well controlled by changing the Cd/S content ratio in the solution. The crystal structure, morphology, and optical and electrical properties of CdS films with different Cd/S content ratios are characterized. The effect of the oxygen content on the device performance is investigated. We find that the introduction of an appropriate amount of oxygen can improve the carrier transport efficiency by decreasing the interface recombination. The spin-coated CdS films have good coverage of the substrate for film thicknesses below 50 nm. By the optimizing of Cd/S content ratio, we achieve an improved efficiency of 5.76% for the Sb 2 Se 3 solar cells. This preparation technique is sufficiently simple for large-scale processing and produces much less wastewater containing cadmium; thus, it is promising for application to future large-scale solar cell production.

CAS / MDL: 10108-64-2 1315-05-5
研究领域: 材料科学 · 太阳能 · 纳米技术 · 化学工程
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