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Nanomaterials · 2025 ·Vol. 15 ·期 10 ·762 · IF 4.3

Observation of Thickness-Modulated Out-of-Plane Spin–Orbit Torque in Polycrystalline Few-Layer Td-WTe2 Film

Mingkun Zheng,Wancheng Zhang,You Lv,Yong Liu,Rui Xiong,Zhenhua Zhang,Zhihong Lu

The low-symmetry Weyl semimetallic Td-phase WTe2exhibits both a distinct out-of-plane damping torque (τDL) and exceptional charge–spin interconversion efficiency enabled by strong spin-orbit coupling, positioning it as a prime candidate for spin–orbit torque (SOT) applications in two-dimensional transition metal dichalcogenides. Herein, we report on thickness-dependent unconventional out-of-planeτDLin chemically vapor-deposited (CVD) polycrystalline Td-WTe2(t)/Ni80Fe20/MgO/Ti (Td-WTN-t) heterostructures. Angle-resolved spin-torque ferromagnetic resonance measurements on the Td-WTN-12 structure showed significant spin Hall conductivities ofσSH,y= 4.93 × 103(ℏ/2e) Ω−1m−1andσSH,z= 0.81 × 103(ℏ/2e) Ω−1m−1, highlighting its potential for wafer-scale spin–orbit torque device applications. Additionally, a detailed examination of magnetotransport properties in polycrystalline few-layer Td-WTe2films as a function of thickness revealed a marked amplification of the out-of-plane magnetoresistance, which can be ascribed to the anisotropic nature of charge carrier scattering mechanisms within the material. Spin pumping measurements in Td-WTN-theterostructures further revealed thickness-dependent spin transport properties of Td-WTe2, with damping analysis yielding an out-of-plane spin diffusion length ofλSD≈ 14 nm.

CAS / MDL: 13494-80-9
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ADVANCED MATERIALS · 2025 ·Vol. 37 ·期 27 ·2420505 · IF 26.8

Modulation of Magnetic Domain and the Occurrence of Antisymmetric Magnetoresistance in the Folded van der Waals Ferromagnet Fe3GaTe2

Xin Gao,Kaiming Wang,Kun Zhai,Junxin Yan,Dongdong Yue,Congpu Mu,Zhipeng Yu,Yingchun Cheng,Anmin Nie,Zhongyuan Liu

Emergent magnetism in 2D materials has attracted significant attention due to their intrinsic magnetic order, which persists down to the monolayer limit, and their potential applications in spintronic devices. In particular, domain structure modulation plays a crucial role in 2D magnet-based nano-spintronic devices. However, the fabrication and modulation of the desired domain structure, along with the establishment of reliable electrical write/read operations, remain significant challenges. Herein, a unique structure-shaping way to modulate domain structure is demonstrated via folding a continuous flat Fe 3 GaTe 2 nanosheet. Accompanied by magnetic domain structure transformation, the symmetric butterfly-shaped magnetoresistance (MR) curve changes to an antisymmetric field-dependent magnetoresistance. Notably, the MR exhibits either the same or opposite sign at geometrically equivalent positions, depending on the relative angle of the current flow and domain wall direction. The MR behavior with respect to sweeping field and electrodes position is due to the circulating current in the vicinity of the domain wall. More importantly, this new concept of manipulating domain structure and its associated magneto-transport behavior can inspire novel spintronic devices fabrication and application.

研究领域: 凝聚态物理 · 材料科学 · 自旋电子学 · 纳米电子学 · 磁性
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Journal of Materials Chemistry C · 2023 ·Vol. 11 ·期 29 ·10079-10091 · IF 6.4

Polycrystalline La0.66Gd0.04Ca0.3MnO3 for magnetic-response applications: concurrent anisotropic magnetoresistance and magneto-transport under a low magnetic field

Sheng’an Yang,Junfeng Li,Jin Hu,Ruidong Xu,Hui Zhang,Lingde Kong,Xiang Liu,Ji Ma,Qingming Chen

Polycrystalline manganites with outstanding anisotropic magnetoresistance and temperature coefficient of magnetization have great potential for application in magnetic sensors. Recent studies have shown that altering the ion occupation ratio would induce Jahn–Teller distortion and affect the spin–orbital coupling effect, consequently enhancing anisotropic magnetoresistance and temperature coefficient of magnetization. In this study, single-phase polycrystalline La0.7−xGdxCa0.3MnO3 ceramics were fabricated via a simple nonaqueous sol–gel technique. The optimal Gd doping concentration induced the strongest Jahn–Teller distortion, as was confirmed through the Curie–Weiss behavior of the ceramics. Finally, these ceramics demonstrated the relatively large anisotropic magnetoresistance and temperature coefficient of magnetization (−30% and −28.1%/K, respectively) values under a low magnetic field of 1 T. The enhanced anisotropic magnetoresistance properties were derived from the spin–orbital coupling effect as demonstrated by the classical transport model.

研究领域: 材料科学 · 磁学 · 陶瓷 · 传感器技术
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ACS Nano · 2022 · IF 18.027

Coexistence of Anisotropic Large Magnetoresistance and Ferroelectricity in Two-Dimensional Narrow-Bandgap Bi2O2Te

Xiaobin Zou,Fei Tian,Haikuan Liang,Yan Li,Yong Sun,Chengxin Wang

Characteristics like air-stability and high carrier mobility make non-van-der-Waals layered Bi2O2Se a good prospect for planar integrated nanosystems. However, experimental investigation about its analogue Bi2O2Te is rather rare due to difficulty in synthesis. Herein, a low-pressure CVD process is proposed that is adjusted to the rigorous growth condition required, with large-scale Bi2O2Te ultrathin film obtained. Magneto-transport behavior reveals a very large anisotropic nonsaturating low-temperature magnetoresistance (∼1133% under 9 T magnetic field). Despite the contradiction between high conductivity and ferroelectricity in principle (mobile electrons screen electrostatic forces between ions), the high-conductive Bi2O2Te film here is revealed experimentally as another intrinsic ferroelectric with the polarization switchable by external electric field (predicted in Nano Lett.2017, 17, 6309). These results prove that Bi2O2Te possesses a very narrow bandgap (∼0.15 eV), high conductivity, large magnetoresistance, and room-temperature ferroelectricity, displaying great potential as a high-performance nanoelectronic two-dimensional semiconductor and, in advanced functional devices, working in the mid-infrared region.

研究领域: 材料科学 · 凝聚态物理 · 纳米电子学 · 铁电材料 · 磁输运
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JOURNAL OF ALLOYS AND COMPOUNDS · 2014 · IF 2.726

Effects of K doping on structure and magnetic transport properties of Sr2−xKxFeMoO6

Y.C. Hu,H.Y. Wang,X.W. Wang,G.L. Song,J. Su,Y.W. Cui,H. Ma,F.G. Chang

Ordered double-perovskite oxides of Sr 2− x K x FeMoO 6 (0.00   ⩽   x   ⩽   0.10) are synthesized via sol–gel method. X-ray powder diffraction analysis shows that all the samples have a single phase and exhibit I4/m symmetry. The cation order of Sr 2− x K x FeMoO 6 decreases from 94.4(2)% to 50.4(2)%, indicating that Fe/Mo is in nearly complete disorder. The magnetic property of Sr 2− x K x FeMoO 6 samples depends on temperature under zero-field-cooling (ZFC) and field-cooling (FC) processes at an applied magnetic field of 100   Oe. The thermal irreversibility behavior in the FC and ZFC curves indicates a typical cluster glass behavior in this system. The H / M versus M 2 curves indicate a second-order magnetic transition, resulting in a small variation in magnetic entropy. Antisite defect is the primary reason for the effective paramagnetic moment.

研究领域: 材料科学 · 固体物理 · 无机化学 · 磁学
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