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NANOTECHNOLOGY · 2021 ·Vol. 33 ·期 5 ·055602 · IF 3.874

Trioctylphosphine accelerated growth of InP quantum dots at low temperature

Xinsu Zhang,Hao Lv,Weishuo Xing,Yanjun Li,Chong Geng,Shu Xu

Significant advance was realized on the economic synthesis of InP quantum dots (QDs) by using aminophosphines as phosphorus precursor. However, the low reaction activity and thermal degradation of aminophosphines bring severe difficulty for growth control of InP QDs. Here, we employed trioctylphosphine (TOP) as a surfactant to accelerate the growth of the InP QDs. The reaction mechanism study reveals that the TOP could form a reactive complex with indium halides that effectively accelerates the formation of InP monomer and reduces the demand for reaction temperature. On this basis, the effect of reaction temperature, precursors, and zinc halide additives on the growth of the TOP-InP QDs was explored. This strategy alleviates the difficulty in growth control of InP QDs and also benefits to the synthesis of luminescent InP/ZnS core–shell QDs within visible regime. A white-light emitting diode device was fabricated with the InP/ZnS QDs that demonstrates their application potential in light-emitting devices.

研究领域: 材料科学 · 化学工程 · 纳米技术
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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2020 · IF 7.489

Zinc ions modified InP quantum dots for enhanced photocatalytic hydrogen evolution from hydrogen sulfide

Shan Yu,Zhanghui Xie,Maoxia Ran,Fan Wu,Yunqian Zhong,Meng Dan,Ying Zhou

Through direct addition of inorganic zinc ions into the solution of indium phosphide quantum dots (InP QDs) at ambient environment, we here present a facile but effective method to modify InP QDs for photocatalytic hydrogen evolution from hydrogen sulfide (H 2 S). X-ray diffraction patterns and transmission electron microscopic images demonstrate that zinc ions have no significant influence on the crystal structure and morphology of InP QDs, while X-ray photoemission spectra and UV–Vis diffuse and reflectance spectra indicate that zinc ions mainly adsorbed on the surface of InP QDs. Photocatalytic results show the average hydrogen evolution rate has been enhanced to 2.9 times after modification and H 2 S has indeed involves in the hydrogen evolution process. Steady-state and transient photoluminescence spectra prove that zinc ions could effectively eliminate the surface traps on InP QDs, which is crucial to suppress the recombination of charge carriers. In addition, the electrostatic interaction between zinc ions and the surface sulfide from InP QDs could mitigate the repulsion between QDs and sulfide/hydrosulfide, which may promote the surface oxidative reaction during photocatalysis. This work avoids the traditional harsh and complicated operations required for surface passivation of QDs, which offers a convenient way for optimization of QDs in photocatalysis.

研究领域: 材料科学 · 环境科学 · 化学
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CRYSTENGCOMM · 2020 ·Vol. 22 ·期 20 ·3474-3481 · IF 3.117

Controlling the nucleation process of InP/ZnS quantum dots using zeolite as a nucleation site

Xiaopeng Zhou,Jiejun Ren,Xuan Dong,Xicheng Wang,Takatoshi Seto,Yuhua Wang

As a representative of III–V semiconductor materials, InP/ZnS quantum dots are regarded as the star material in the field of light-emitting devices due to their low toxicity and suitable luminescence range. However, there are still some major problems in the preparation process of InP/ZnS QDs, such as phosphine precursors are expensive and difficult to preserve, the nucleation time of short wavelength InP/ZnS QDs is too short and the size distribution is too large. In this paper, we'll replace the traditional tris(trimethylsilyl)phosphine with tris(diethylamino)phosphine as a cheaper phosphine precursor and propose a novel and convenient method for adjusting the luminescence wavelength of InP/ZnS QDs. Different from the traditional method to adjust the emission wavelength by changing the nucleation time, the emission wavelength of InP/ZnS QDs was regulated by changing the number of initially formed cores. Zeolites provide a nucleation site for the InP cores. InP/ZnS QDs that emit between 522 nm and 589 nm were obtained. Moreover, the obtained InP/ZnS QDs have good monochromaticity, and the minimum half-width (half-full width) is up to 48 nm. This method provides a new way to adjust the size of quantum dots with good performance.

CAS / MDL: 557-05-1
研究领域: 材料科学 · 化学工程
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Advanced Optical Materials · 2023 ·Vol. 11 ·期 6 ·2202128 · IF 9

Narrow-Band Blue-Emitting Indium Phosphide Quantum Dots Induced by Highly Active Zn Precursor

Xiaopeng Zhou,Jiejun Ren,Wenlei Cao,Andries Meijerink,Yuhua Wang

Colloidal indium phosphide quantum dots (In(Zn)P/ZnS QDs) show potential for application in the field of light emitting diodes (LED) and Mini/Micro-LEDs displays due to their tunable emission and low toxicity. However, the performance of blue-emitting indium phosphide QDs is still lagging behind that of red and green. Herein, a facile method to overcome this difficulty is proposed. The highly active Zn(ClO 4 ) 2 precursor is injected into the reaction mixture during the nucleation process to enhance zinc incorporation, which generates the In(Zn)P alloy QDs with enlarged bandgap. At the same time, the increase of zinc content can inhibit excessive growth of In(Zn)P QDs, and significantly improve its size distribution. The monodisperse In(Zn)P/ZnS QDs exhibit excellent blue emission (466 nm) and have the narrowest full width at half maxima (41 nm) of blue emission In(Zn)P QDs ever reported. This work provides a feasible and effective strategy for obtaining narrow-band blue-emitting In(Zn)P/ZnS QDs.

研究领域: 材料科学 · 纳米技术 · 光学工程
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APPLIED SURFACE SCIENCE · 2017 · IF 3.387

Controllable synthesis of dual emissive Ag:InP/ZnS quantum dots with high fluorescence quantum yield

Wu Yang,Guoxing He,Shiliang Mei,Jiatao Zhu,Wanlu Zhang,Qiuhang Chen,Guilin Zhang,Ruiqian Guo

Dual emissive Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been faced with challenges. Here, we demonstrate the dual emissive Ag:InP/ZnS core/shell QDs with the excellent photoluminescence quantum yield (PL QY) up to 75% and their PL dependence on the reaction temperature, reaction time, the different ZnX 2 (X   =   I, Cl, and Br) precursors, the ratio of In/Zn and the Ag dopant concentration. The as-prepared Ag:InP/ZnS QDs exhibit dual emission with one peak position of about 492   nm owing to the intrinsic emission, and the other peak position of about 575   nm resulting from Ag-doped emission. These dual emissive QDs are integrated with the commercial GaN-based blue LEDs, and the simulation results show that the Ag:InP/ZnS QDs-based white LEDs could realize bright natural white-lights with the luminous efficacy (LE) of 94.2-98.4   lm/W, the color rendering index (CRI) of 82–83 and the color quality scale (CQS) of 82–83 at different correlated color temperatures (CCT). This unique combination of the above properties makes this new class of dual emissive QDs attractive for white LED applications.

研究领域: 材料科学 · 光学工程 · 纳米技术
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ACS Applied Nano Materials · 2022 · IF 6.14

Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices

Cong Shen,Yanqing Zhu,Hong Tao,Jingling Li,Jianhua Zou,Lei Wang,Jingqiu Liang,Xiudi Xiao,Xueqing Xu,Gang Xu

InP quantum dots (QDs) with low toxicity are an ideal alternative to Cd-based QDs. However, the optical properties and stability of blue-emitting InP QDs are far inferior to those of red and green QDs. In this work, we report the synthesis of highly fluorescent InP/GaP/ZnS core/shell/shell QDs with an emission wavelength of 484 nm and photoluminescence quantum yield of 71%, along with a full width at half-maximum as narrow as 45 nm. In addition, we encapsulated the QDs with siloxane via specific ligand exchange and condensation reactions to improve their stability. The corresponding siloxane capping QD light-emitting device (QLED) shows a maximum luminance of 690 Cd m–2, an external quantum efficiency of 0.09%, and a much longer lifetime than pristine QDs. As a result, these enable the siloxane capping QDs to achieve a much stronger storage stability and a longer QLED lifetime than pristine QDs.

研究领域: 材料科学 · 光学工程
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Full Color Al-Doped InP Quantum Dots with High Brightness via Gram-Scale One-Pot Synthesis for White Light-Emitting Diodes

Kai-Zheng Song,Jin-Zhao Huang,Meng-Xin Li,Feng-Lei Jiang

High-performance, environmentally friendly indium phosphide (InP)-based quantum dots (QDs) are urgently needed to meet the demands of rapidly evolving display and lighting technologies. By adopting the highly efficient and cost-effective one-pot method and utilizing aluminum isopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS QDs with emission maxima ranging from 480 to 627 nm were synthesized. The photoluminescence quantum yield (PLQY) of the blue, green, yellow, orange, and red QDs, with emission peaks at 480, 509, 560, 600, and 627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively. Remarkably, the required reaction times for synthesizing the above QDs were all within 4 h, showcasing the high efficiency of this one-pot method. Moreover, the influence of Al-doping on red InP/ZnS QDs was thoroughly explored. Compared with undoped QDs, the increased PLQY, narrowed full-width at half-maximum (fwhm), and enhanced photostability were observed in Al-doped QDs. Characterization results revealed the relatively thicker shell in Al-doped QDs and demonstrated the presence of Al in the shell in the form of AlPOx. The increased shell thickness and narrowed fwhm indicated a reduced lattice strain at the core–shell interface in Al-doped QDs, which might result from the introduced trivalent Al3+, as it alleviated the charge mismatch at the core/shell interface. Approximately 3 g of QDs powders can be obtained through a single gram-scale one-pot preparation. The on-chip white light-emitting diode (LED), using the red and green Al-doped QDs as phosphors, exhibited a maximum power efficiency of 17.8 lm W–1 and stable CIE coordinates around (0.32, 0.35), and achieved a wide color gamut (97.4% of the NTSC color space), demonstrating the promising potential in lighting technologies.

研究领域: 材料科学 · 光学工程 · 纳米技术
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APPLIED SURFACE SCIENCE · 2019 · IF 5.155

Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions

Xian Wei,Shiliang Mei,Guilin Zhang,Danlu Su,Fengxian Xie,Wanlu Zhang,Ruiqian Guo

Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED.

研究领域: 材料科学 · 光学
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Materials Today Nano · 2024 · IF 8.2

Green synthesis of high-quality indium phosphide quantum dots using tripyrrolidine phosphine as a promising phosphorus source for white LED

Qiwen Xue,Peiqing Cai,Xipeng Pu,Qi Ai,Junjie Si,Xin Yao,Gongxun Bai,Qianmin Dong,Zugang Liu

Indium phosphide quantum dots (InP QDs) have emerged as highly promising contenders for cadmium-based quantum dots , primarily due to their environmentally sustainable attributes. Early methods for synthesizing InP QDs employed tris(trimethylsilyl)phosphine and tris(dimethylamino)phosphine as phosphorus sources. However, the associated toxicity and hazards of these sources have hindered further progress. In this study, we introduce tripyrrolidine phosphine as a safe alternative phosphorus source. This source not only guarantees affordability, but also simplifies recycling and hazardous waste treatment processes. Simultaneously, precise regulation of the Zn precursor during the growth of the ZnS shell has enabled the synthesis of InP QDs of exceptional quality with a prominent emission peak at 525 nm, an impressive photoluminescence quantum yield of 76.11 %, and a narrow half-peak width of 37 nm. This achievement sets a significant precedent for the development of an environmentally friendly InP QD synthesis methodology. Furthermore, the incorporation of the QDs into white LEDs yields compelling outcomes, including color coordinates of (0.33, 0.30) and a measured correlated color temperature of 5637 K. Therefore, this study not only establishes an innovative path for InP QD production, but also drives their broader integration into the realm of white LED applications.

研究领域: 材料科学 · 光学工程 · 环境科学
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Advanced Optical Materials · 2025 · IF 7.2

Controllable Nucleation and Growth of Blue InP Quantum Dots Enable Efficient and Bright Light-Emitting Diodes

Wei Wang,Shizheng Zhang,Sitao Huo,Fan Cao,Sheng Wang,Qianqian Wu,Rui Li,Xuyong Yang

Indium phosphide (InP) quantum dots (QDs) have emerged as eco-friendly substitutes for cadmium (Cd)-based QDs. However, their electroluminescence (EL) performance, especially for blue ones, lags significantly behind that of the state-of-the-art Cd-based counterparts. This disparity can be attributed to the abundant defect states arising from their high surface area/volume ratio and irregular size distribution caused by high-reactivity phosphorus (P) precursor. Herein, trimethylgermanium chloride is developed into the P precursor, effectively modulating the nucleation reaction rate and drastically reducing phosphorus oxide defects. Furthermore, the epitaxial growth of the ZnS layer is successfully achieved employing zinc diethyldithiocarbamate as the precursors. This approach not only facilitates superior crystallinity in QDs at lower temperatures but also effectively suppresses electron diffusion to the shell, thereby alleviating the persistent redshift and ensuring the peak position remains within the blue emissive range. Consequently, the synthesized blue InP/ZnS QDs demonstrate a PLQY of 73% at 474 nm, empowering them to exhibit exceptional EL performance with a peak external quantum efficiency of 2.38% and a record luminance of 2693 cd cm −2 .

研究领域: 材料科学 · 纳米技术 · 光学工程
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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2022 · IF 9.965

A tube-like dual Z-scheme indium oxide@indium phosphide/cuprous oxide photocatalyst based on metal–organic framework for efficient CO2 reduction with water

Yi Wang,Jixiang Xu,Jun Wan,Jing Wang,Lei Wang

Developing a photocatalyst for efficient reduction of carbon dioxide (CO 2 ) is a long-term goal to address global climate change. In this work, a tube-like indium oxide@indium phosphide/cuprous oxide ( In 2 O 3 @InP/Cu 2 O) photocatalyst was prepared by annealing-phosphidation of In-Materials of Institute Lavoisier-68 (In-MIL-68) followed by electrodeposition of Cu 2 O, which was used to reduce CO 2 with water under light irradiation . Partial phosphidation of In 2 O 3 endowed In 2 O 3 @InP/Cu 2 O with strong light-harvesting ability. The In 2 O 3 @InP heterojunction combined with in situ loaded Cu 2 O provided a dual Z-scheme heterojunction for efficient electrons-holes separation. Under the synergisms of each component, the optimized In 2 O 3 @InP 60 /Cu 2 O-1 exhibited strong adsorption of CO 2 and excellent photocatalytic performance in CO 2 reduction. The yields of CO and CH 4 were 13.7 and 38.8 μmol g −1 , respectively, after 5 h simulated light illumination, higher than the corresponding yields with In 2 O 3 (CO: 7.2 μmol g −1 , CH 4 : 13.2 μmol g −1 ). This study may provide some insights into the design of specific ternary photocatalysts with dual Z-scheme charge transfer mode for CO 2 reduction.

CAS / MDL: 207398-97-8 100-21-0
研究领域: 材料科学 · 环境科学 · 化学工程
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INORGANIC CHEMISTRY · 2025 · IF 4.7

Green Synthesis of Luminous Indium Phosphide Nanocrystals

Junfeng Wang,Xuejiao Sun,Lei Gao,Shuyu Tian,Mengqi Zhang,Fei Huang,Jianjun Tian

Indium phosphide (InP) nanocrystals (NCs) have garnered significant attention for displays and bioimaging due to their superior optical properties and low toxicity. However, the high cost and operational risks associated with the colloidal synthesis of InP NCs hinder their widespread development and application. In this study, we presented a green synthesis method for InP NCs using solid ammonium hypophosphite ((NH4)H2PO2) as an economical and safe phosphorus precursor. (NH4)H2PO2 was decomposed controllably to produce highly reactive gaseous phosphine (PH3) through precise temperature management. The released PH3 then reacted with indium carboxylate to form InP clusters, which serve as intermediate precursors. This cluster-assisted method endowed a continuous supply of monomers for the nucleation and growth of high-quality InP NCs with uniform size distribution. Following a surface treatment that balances etching and passivating capabilities, the InP NCs exhibited a narrow emission line width of 46 nm and a near-unity photoluminescence quantum yield (PLQY), representing one of the best emission performances for shell-less InP NCs. The economical and stable nature of the raw materials used in this approach opens a pathway for the green synthesis of InP NCs.

研究领域: 材料科学 · 纳米技术 · 光学
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