The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrO x , x < 3) with a low melting point for high stability and high performance. In this contribution, CrO x is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrO x and 2 nm LiF x into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrO x (5 nm)/Au (4 nm)/ CrO x (5 nm) as the emitter. The formation of Cr(OH) 3 in ambient condition, resulted in a lower work function (4.8 eV) of the CrO x film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrO x covered with 500 nm Ag, when stored in ambient air longer than 170 days.
Carrier-selective passivating contacts using transition metal oxides (TMOs) have attracted great attention for crystalline silicon (c-Si) heterojunction solar cells recently. Among them, tantalum oxide (Ta 2 O 5 ) exhibits outstanding advantages, such as a wide bandgap, good surface passivation, and a small conduction band offset with c-Si, which is typically used as an electron-selective contact layer. Interestingly, it is first demonstrated that solution-processed Ta 2 O 5 films exhibit a high hole selectivity, which blocks electrons and promotes hole transport simultaneously. Through the ozone pre-treatment of Ta 2 O 5 /p-Si interface and optimization of the film thickness (≈9 nm), the interfacial recombination is suppressed and the contact resistivity is reduced from 178.0 to 29.3 mΩ cm 2 . Moreover, the Sn 4+ doping increases both the work function and oxygen vacancies of the film, contributing to the improved hole-selective contact performance. As a result, the photoelectric conversion efficiencies of Ta 2 O 5 /p-Si heterojunction solar cells are significantly improved from 14.84% to 18.47%, with a high thermal stability up to 300 °C. The work has provided a feasible strategy to explore new features of TMOs for carrier-selective contact applications, that is, bipolar carrier transport properties.
危险品化学品经营许可证（带存储）