Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C 61 -butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates , respectively.
An efficient perovkite light-emitting diode (PeLED) is fabricated by incorporating 1,3,5-tri (m-pyrid-3-yl-phenyl)benzene (TmPyPB) between the emitting layer (EML) and the electron transporting layer (ETL), where TmPyPB plays an indispensable blocking effect on both excitons and holes. It shows a maximum current efficiency of 9.37 cd/A, and the corresponding external quantum efficiency (EQE) of 2.42% with a saturated green color Commission International de I'Eclairage (CIE1993) coordinated of (0.1279, 0.7951) under a driving voltage of 6 V. Meanwhile, the operational lifetime of the TmPyPB-based PeLED is improved to about 2.6-fold to that of the one with only the traditional ETL of aluminum 8-hydroxyquinolinate (Alq 3 ). The enhancements of electroluminescence (EL) performance are mainly attributed to better confinement of both the holes and the excitons in the EML, and more balanced carrier transportation in the TmPyPB-based PeLED. This work offers a feasible strategy to develop high performance optoelectronic devices.
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