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ORGANIC ELECTRONICS · 2025 · IF 2.6

High-efficiency quantum dot light-emitting devices with dual hole injection layers

Zhoujian Fan,Kuibao Yu,Hailong Hu

Quantum dot light-emitting devices (QLEDs) exhibit unique advantages for high-resolution display applications. However, as pixel size decreases, challenges including insufficient hole injection and leakage current become increasingly pronounced, resulting in significant degradation in device performance. Herein, dual hole injection layers are constructed by self-assembly of an organic small molecular layer on conventional PEDOT:PSS to smooth the potential barrier, thus achieving more balanced carrier injection. An ultrafine inter-pixel isolation structure is designed as a charge blocking layer surrounding the photolithograpic pixels, with the purpose of effectively mitigating leakage current in the non-emitting region. The high-resolution devices show a high external quantum efficiency (EQE) of 19.6 % and a peak power efficiency (PE) of 20.63 lm/W, both of which significantly exceed the performance of the control device (EQE = 14.6 %, PE = 10.54 lm/W).

研究领域: 光电子学 · 纳米技术 · 材料科学 · 显示技术
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ORGANIC ELECTRONICS · 2020 · IF 3.31

Highly efficient Ag–In–Zn–S quantum dot light-emitting diodes with a hole-spacing interlayer

Rongmei Yu,Furong Yin,Chunying Pu,Haizhen Song,Xiumei Xu,Han Zhang,Wenyu Ji

Although much effort has been made to the cadmium-free quantum dot light emitting diodes (QLEDs), it is still a big challenge to achieve an efficient eco-friendly QLED. Here, an extremely efficient QLED based on Ag–In–Zn–S QDs is constructed with the insertion of an 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) hole-spacing interlayer. The electrical properties of single carrier devices demonstrate the TPBi blocks the hole injection, leading to a more balanced charge injection in the device. Transient electroluminescence measurements confirm that the hole accumulation adjacent QDs is dramatically suppressed after the insertion of TPBi, hence limiting the interactions between excitons and holes. Consequently, the peak current (power) efficiency of 6.0 cd/A (6.5 lm/W) is achieved. To the best of our knowledge, this is the record efficiency for the Ag–In–Zn–S QLEDs reported to date. We anticipate this work will provide a new route for optimizing the performance of Cd-free QLEDs.

研究领域: 材料科学 · 光电子学
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Journal of Materials Chemistry C · 2025 · IF 5.1

P-type doping strategy for hole-transport polymer in blue perovskite light-emitting diodes

Jian Chen,Yifan Wang,Jiajia Gao,Jialiang Tian,Yuelong Ma,Wei Shen,Kun Cao,Yingying Fu,Lihui Liu,Shu-Fen Chen

The inferior hole injection efficiency in blue perovskite light-emitting diodes (PeLEDs), caused by the large hole injection barrier and low hole mobility of conventional hole transport layers (HTLs), remains a critical limitation to achieving higher external quantum efficiency (EQE) and device stability. To address this challenge, we propose a rational interfacial engineering strategy employing p-type molecular doping to optimize device performance. By incorporating 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ) as a dopant in the poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) HTL, we significantly enhance hole mobility from 3.96×10⁻⁶ to 1.13×10⁻⁴ cm²/(V·s) and adjust the highest occupied molecular orbital energy level from -5.40 to -5.56 eV, facilitating efficient hole carrier injection and transport. Additionally, perovskite films deposited on the doped HTL exhibit improved crystallinity and a reduced defect density from 3.47×10¹⁸ to 3.18×10¹⁷ cm⁻³. Owing to these synergistic improvements, the optimized blue PeLEDs achieve a maximum EQE of 4.57% with an emission peak at 484 nm, representing a 4.02-fold enhancement over the pristine device. This work highlights the effectiveness of molecular doping in tailoring interfacial properties and balancing charge transport for high-performance blue PeLEDs.

CAS / MDL: 7787-69-1
研究领域: 材料科学 · 光电子学 · 高分子科学 · 半导体器件 · 纳米技术
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Inorganic Chemistry Frontiers · 2024 · IF 6.1

Inorganic Cu2ZnSnS4 hole transport layer for perovskite light-emitting diodes

Lunyao Pan,Wen Li,Xiankan Zeng,Maolin Mu,Qungui Wang,Yongjian Chen,Chenglong Li,Shiyu Yang,Linzhu Dai,Li Tao,Weiqing Yang

Inorganic Cu2ZnSnS4 (CZTS) has garnered significant attention in the field of solar cells owing to its high hole mobility, suitable optical bandgap, cost-effective and earth-abundant elemental constituents. In particular, the deeper highest occupied molecular orbital (HOMO) of CZTS makes it an alternative for the traditional organic hole transport layer (HTL) material poly(3,4-ethyllenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), which can suppress acidic interface and hygroscopic problem in perovskite light-emitting diodes (PeLEDs). Herein, we demonstrate CZTS as a novel inorganic HTL for green FAPbBr3 PeLEDs, achieving a peak external quantum efficiency (EQE) of 7.59% and a maximum luminance of 27 000 cd m−2 (emitting at 529 nm). The fluorescence properties of the perovskite films and interfacial behaviors of CZTS/FAPbBr3 were investigated through surface state regulation of CZTS HTL. High hole mobility (0–30 cm2 V−1 s−1) of CZTS HTL and low hole injection barrier (∼0.13 eV) between CZTS and perovskite endow the CZTS-based PeLEDs with enhanced hole transport capability and suppressed interfacial carrier accumulation. In addition, an attractive cost-effectiveness advantage of about $0.24 per g synthesizing CZTS makes it a promising competitor to mainstream organic HTL materials such as PEDOT:PSS (∼$1.3 per g). An in-depth understanding of this novel CZTS HTL makes an essential step forward for the commercialization of PeLEDs.

研究领域: 材料科学 · 光电学 · 半导体物理
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Catalysts · 2020 ·Vol. 10 ·期 12 ·1425 · IF 3.52

Hole Doping to Enhance the Photocatalytic Activity of Bi4NbO8Cl

Jingbang Sun,Ni Han,Yan Gu,Xiaowang Lu,Liang Si,Qinfang Zhang

An increase of carrier concentration is one of the most important routes for enhancing the catalytic performance of semiconductor photocatalysts. In this study, the Sillén–Aurivillius oxychloride Bi4NbO8Cl with hole doping was successfully prepared by a solid-state reaction method. X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible diffuse reflectance spectra (UV–vis DRS), X-ray photoelectron spectrometry (XPS) and photoluminescence spectra (PL) were used to characterize and analyze the prepared samples. The experimental results and density functional theory calculations demonstrate that hole doping can be formed in Bi4NbO8Cl by inserting zinc into the niobium site, and the photocatalytic activity can be improved by introducing additional holes into Bi4NbO8Cl. The photogenerated hole (h+) is considered to be the main active species to degrade trypan blue (TB) through trapping experiments. The optimal photocatalyst of Bi4Nb0.8Zn0.2O8Cl exhibits excellent photocatalytic activity in degradation of trypan blue under visible light irritation. Moreover, a possible photocatalytic degradation mechanism is discussed according the experimental and analytical results.Keywords:Bi4NbO8Cl;hole doping;visible light;photocatalytic degradation

研究领域: 材料科学 · 环境科学
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2024 ·Vol. 35 ·期 10 ·1-9 · IF 2.8

Improved performance of quasi-two dimensional perovskite light-emitting diodes with l-phenylalanine-doped PEDOT:PSS hole transport layer

Ai Yansong,He Hongshen,Shen Peng,Wang Zhenyang,Zhang Hui,Zhou Yuanming,Mei Fei

Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention in optoelectronic devices due to their excellent performance. Here, the performance of PeLEDs was improved by utilizing l -phenylalanine-doped PEDOT:PSS as hole transport layer (HTL). The optimal device with l -phenylalanine doped HTL shows a maximum luminance of 3800 cd/m 2 and a maximum external quantum efficiency of 2.80%. Compared with the control device using pure PEDOT:PSS HTL, the maximum luminance was increased by 90%, and the maximum external quantum efficiency was increased by 154%, respectively. This is mainly due to the fact that PEDOT:PSS with l -phenylalanine doping optimizes the morphology of the perovskite film and suppresses the exciton quenching at the HTL/perovskite interface. In addition, moderate addition of l -phenylalanine can enhance the hole injection capability of HTL. These experimental results provide proof of amino acid-modified PEDOT:PSS as HTL and a basis for improving the performance of PeLEDs.

研究领域: 材料科学 · 光电子学 · 光子学
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RSC Advances · 2024 ·Vol. 14 ·期 13 ·9072-9079 · IF 3.9

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Ruibin Xue,Gang Gao,Lei Yang,Liangge Xu,Yumin Zhang,Jiaqi Zhu

CuI films present promising optoelectronic properties for transparent conductors. However, the high hole concentration in CuI films hinders the controllable modulation of hole mobility, limiting their application in low-dimensional thin-film transistors. In this study, CuI films were prepared through a Cu film iodination method at room temperature, and a systematic investigation was conducted on the modulation of hole concentration and mobility with varying film thickness. The films exhibited a zinc blende structure (γ-phase) with increasing grain size as the thickness increased. The transmittance and optical bandgap of the films decreased with increasing thickness. The correlation of vacancy concentration with changing film thickness was analyzed through photoluminescence spectroscopy, revealing the influence of grain boundary migration on vacancy formation. The reduction in film thickness diminishes the migration of CuI grain boundaries, consequently reducing the probability of Cu vacancy and I vacancy formation, resulting in diminished hole concentration and enhanced hole mobility and film conductivity. The film with a thickness of 20 nm demonstrated optimal performance, with a transmittance of 90%, hole concentration of 4.09 × 1017 cm−3, hole mobility of 506.50 cm2 V−1 s−1, and conductivity of 33.19 S cm−1. This work deepens the understanding of hole transport such as hole concentration and mobility modulation in CuI films, highlighting the importance of controlling grain boundary migration during the film growth process.

研究领域: 材料科学 · 光学 · 半导体物理
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SEPARATION AND PURIFICATION TECHNOLOGY · 2024 · IF 8.1

Fabrication of In-doped CdSe/Zn3In2S6 type II heterojunction composite for efficient photocatalytic hydrogen evolution

Wenqian Luan,Yuye Yan,Jianxiang Wang,Yingxia Zong,Ruiyang Zhao,Jishu Han,Lei Wang

Conversion of water into renewable hydrogen energy using solar energy is one of the ideal methods to address the current environmental pollution and increasing energy demand. Thus developing the photocatalyst with high efficiency, stability, and a low electron-hole recombination rate becomes very important. In this paper, Zn 3 In 2 S 6 microspheres were synthesized by hydrothermal method, and then In-doped CdSe nanoparticles were loaded on the surface of Zn 3 In 2 S 6 microspheres to form Cd 0.9 In 0.1 Se/Zn 3 In 2 S 6 type II heterojunction. Under simulated sunlight irradiation, the photocatalytic hydrogen production of Cd 0.9 In 0.1 Se/Zn 3 In 2 S 6 reached 11.41 mmol h −1 g −1 , which was 4.61 times and 1.97 times that of Cd 0.9 In 0.1 Se and Zn 3 In 2 S 6 , respectively. The experimental results showed that the formation of type II heterojunction could improve the photocatalytic hydrogen production efficiency by shortening the charge transport distance and inhibiting the recombination of electron-hole pairs. This work will provide new ideas and insights for the development of photocatalytic hydrogen production technology.

研究领域: 材料科学 · 能源化学
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Materials · 2022 ·Vol. 15 ·期 17 ·6035 · IF 3.748

Preparation of Porous Ellipsoidal Bismuth Oxyhalide Microspheres and Their Photocatalytic Performances

Bing Luo,Canfeng Wu,Fuzeng Zhang,Tingting Wang,Yingbang Yao

Well-dispersed and uniform porous ellipsoidal-shaped bismuth oxyhalides (nominal composition: 80%BiOCl/20%BiOI) microspheres were obtained by a facile solvothermal method, in which process the use of polyvinylpyrrolidone (PVP) as template agent was found to be crucial. At 150 °C, elliptical porous particles with a particle size of 0.79 μm were formed. Instead of forming solid solutions, the study of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) shows that the prepared 80%BiOCl/20%BiOI microspheres are composite of BiOCl and BiOI in nature and the obtained crystallite size is about 5.6 nm. The optical bandgap of 80%BiOCl/20%BiOI was measured to be 2.93 eV, which is between the bandgap values of BiOCl and BiOI. The 80%BiOCl/20%BiOI microspheres were able to decompose various organic dyes (rhodamine B-RhB, methyl orange-MO, methylene blue-MB, methyl violet-MV) under an illuminated condition with the degradation rate in the order of RhB > MB > MV > MO, and 98% of RhB can be degraded in 90 min. Radical scavenger tests showed that photogenerated holes are the main active species for the photocatalytic decomposition of all of the tested organic dyes. Our results show that the obtained porous ellipsoidal-shaped 80%BiOCl/20%BiOI microspheres are promising for the degradation of various organic pollutants under the illumination of visible light.Keywords:bismuth oxyhalides;photocatalytic degradation;holes;microspheres

研究领域: 材料科学 · 环境科学
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Advanced Materials Interfaces · 2020 ·Vol. 7 ·期 19 ·2000754 · IF 4.948

Planar Organic-Si Hybrid Solar Cell with MoOx Mixed PEDOT:PSS as Hole Injection Layer Profits from Mo5+ and Mo6+ Synergistic Effects

Wenzhong Fang,Pan Wang,Zitao Ni,Tao Sun,Chaoyu Xiang,Kun Yue,Rongfei Wang,Jie Yang,Yao Zhou,Chong Wang,Yu Yang

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole injection layer plays an important role in planar Si/PEDOT:PSS heterojunction solar cells (HSCs). Herein, a MoO x mixed aqueous PEDOT:PSS cosolvent is developed and is applied into a Si/PEDOT:PSS solar cell preparation via a time-saving one-step spin-coating method. With an optimal concentration of MoO x dopants, the power conversion efficiency of the device exhibits from 10.26% up to 13.82% with all inherent photovoltaic parameters enhanced. The detailed characterization and analytical results indicate that an advanced electronic property is produced by MoO x dopants and interface optimization caused by synergistic effects from Mo 5+ and Mo 6+ species with PEDOT:PSS, which enhances its interface work function and promotes hole transportation capacity. The result paves a path for exploring efficient Si/PEDOT:PSS HSCs with suitable functional material and a simple solution-processable method.

CAS / MDL: 1317-33-5
研究领域: 材料科学 · 光伏技术 · 有机电子学
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ADVANCED MATERIALS · 2017 ·Vol. 29 ·期 39 ·1701221 · IF 19.791

Graded Heterojunction Engineering for Hole-Conductor-Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity

Bo Li,Yanan Zhang,Luyuan Zhang,Longwei Yin

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic–organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3− x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3− x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3− x . The CsPbBr x I 3− x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron–hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices.

研究领域: 光伏学 · 材料科学 · 半导体物理 · 可再生能源
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ACS Catalysis · 2021 · IF 13.084

Photocatalytic Water Oxidation Directly Using Plasmonics from Single Au Nanowires without the Contact with Semiconductors

Yuanyuan Qian,Furui Tan,Jun Liu,Qicong Li,Kuankuan Ren,Yanbin Huang,Xiaobao Li,Dawei Cao,Kong Liu,Chao Zhao,Yongxin Li,Zhijie Wang,Shengchun Qu

Plasmon-induced photocatalytic reactions are important in the process of conversion of solar energy into fuels. To efficiently harvest energetic charge carriers from light-excited plasmonic materials, contact of the metallic nanostructures with semiconductors is necessary. Herein, we report that, even on single Au nanowires that are not in contact with any semiconductors, prominent photocatalytic water oxidation reactions could be still observed. The involved Au nanowires have dimensions of 300 nm in diameter, and the fabricated nanoelectrode presents an obvious photocurrent of 0.4 mA/cm2 at the potential of 1.2 V vs Ag/AgCl. The corresponding incident photon-to-electron conversion efficiency is realized as 0.24% at the wavelength of 520 nm. Detailed investigations reveal that the hot holes around the d-band of the plasmonic nanomaterials are responsible for such photocatalytic behaviors. Our results provide a special perspective to the plasmon-related reactions.

研究领域: 材料科学 · 能源转换 · 纳米技术
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