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OPTICS LETTERS · 2021 ·Vol. 46 ·期 16 ·3829-3832 · IF 3.776

High stability ultra-narrow band self-activated KGaSiO4 long-persistent phosphors for optical anti-counterfeiting

Jinxing Zhao,Xu Li,Shengnan Li,Xinru Zhao,Fenghe Wang,Fenghe Wang,Dawei Wang,Guoyi Dong,Li Guan,Li Guan

Optical anti-counterfeiting has been developed as a promising optical-sensing technique. A self-activated ${{\rm KGaSiO}_4}$ phosphor was successfully prepared using the traditional solid-state method. The photoluminescence spectra of the as-synthesized phosphors indicate that the ultra-narrow band emission with green light peak at 503 nm is obtained when phosphors are excited by 254 nm UV light. Additionally, the measured afterglow curve shows that the emission of this phosphor can last more than 1200 s after UV excitation stops, which indicates that ${{\rm KGaSiO}_4}$ is a potential candidate for anti-counterfeiting materials. The luminescent and decay mechanism are discussed by theoretical calculation and thermo-luminescent spectra in detail. The theoretical model can provide support for explaining the mechanism of narrow band or persistent phosphor.

研究领域: 材料科学 · 光学
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Catalysts · 2019 ·Vol. 9 ·期 12 ·1067 · IF 3.444

Study on the Photocathodic Protection of Q235 Steel by CdIn2S4 Sensitized TiO2 Composite in Splash Zone

Zheng Ma,Xiumin Ma,Xiutong Wang,Nazhen Liu,Xuehui Liu,Baorong Hou

In this work, the photo-catalytic activity of TiO2is considerably enhanced via sensitization with CdIn2S4, and its application for protecting Q235 from corrosion in splash zones is examined. TiO2nanotube arrays (NTAs) are prepared on a flat Ti substrate via two-step anodization. CdIn2S4 is deposited on the surface of TiO2NTAs by hydrothermal reaction. TiO2NTAs with enormous specific surface areas and large-diameter hollow nanostructures are found to benefit the immobilization of CdIn2S4. As a narrow band gap semiconductor, CdIn2S4is able to extend the light absorption range of TiO2, and the construction of an n–n type hetero-junction accelerates the separation of carriers. Strong solar light, which accelerates the corrosion of Q235 in the splash zone area, is converted into the necessary condition for protecting Q235 from corrosion. In this work, TiO2is sensitized with MoS2microspheres (MoS2/TiO2nanocomposites), which were prepared on a flat Ti substrate via a two-step anodization and hydrothermal method, sequentially.Keywords:corrosion;photocathodic protection;visible light;narrow bandgap semiconductor;TiO2

研究领域: 材料科学 · 电化学
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ACS Applied Optical Materials · 2024 · IF 0

Perovskite Bulk Ceramics Prepared by Solid-State Sintering for Narrow-Band Photodetectors

Junchi Li,Junhui Ran,Jia Liu,Chuanjun Tu,Yongbo Yuan,Bin Yang

Bulk ceramics of lead halide perovskites hold great promise for developing low-cost and high-performance optoelectronic devices. However, the preparation of perovskite bulk ceramics is still a significant challenge. Here, we have demonstrated that size-tunable bulk ceramics of CsPbBr3 can be achieved by employing solid-state sintering at 550 °C in an air furnace as using traditional oxide ceramics sintering for our reference in this work. Compared to one-step sintering, we found that two-step sintering allowed us to obtain dense CsPbBr3 ceramics that showed clearcut grains and grain boundaries. The devices based on the as-sintered CsPbBr3 bulk ceramics exhibited narrow-band photodetection performance under the positively biased condition. The narrow-band photodetectors showed a specific photodetectivity of 1.03 × 1011 Jones at 551 nm along with a small full width at half-maximum of ∼20 nm. Our work paves a feasible road of preparing perovskite bulk ceramics with solid-state sintering, which is critically important for slicing bulk ceramics of lead halide perovskites toward low-cost photodetector arrays and photovoltaic panels.

研究领域: 材料科学 · 光学工程
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Light-Science & Applications · 2019 ·Vol. 8 ·期 1 ·1-9 · IF 14

Emerging ultra-narrow-band cyan-emitting phosphor for white LEDs with enhanced color rendition

Zhao Ming,Liao Hongxu,Molokeev Maxim S.,Zhou Yayun,Zhang Qinyuan,Liu Quanlin,Xia Zhiguo

Phosphor-converted white LEDs rely on combining a blue-emitting InGaN chip with yellow and red-emitting luminescent materials. The discovery of cyan-emitting (470–500 nm) phosphors is a challenge to compensate for the spectral gap and produce full-spectrum white light. Na 0.5 K 0.5 Li 3 SiO 4 :Eu 2+ (NKLSO:Eu 2+ ) phosphor was developed with impressive properties, providing cyan emission at 486 nm with a narrow full width at half maximum (FWHM) of only 20.7 nm, and good thermal stability with an integrated emission loss of only 7% at 150 °C. The ultra-narrow-band cyan emission results from the high-symmetry cation sites, leading to almost ideal cubic coordination for UCr 4 C 4 -type compounds. NKLSO:Eu 2+ phosphor allows the valley between the blue and yellow emission peaks in the white LED device to be filled, and the color-rendering index can be enhanced from 86 to 95.2, suggesting great applications in full-spectrum white LEDs.

研究领域: 材料科学 · 光学工程 · 固态照明技术
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ACS Nano · 2019 · IF 13.903

Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response

Mingxing Zhao,Wei Xia,Yang Wang,Man Luo,Zhen Tian,Yanfeng Guo,Weida Hu,Jiamin Xue

Two-dimensional (2D) materials with narrow band gaps (∼0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detections. However, most of the 2D materials studied to date have band gaps that are too large. A few of the materials with suitable band gaps are not stable under ambient conditions. In this study, the layered Nb2SiTe4 is shown to be a stable 2D material with a band gap of 0.39 eV. Field-effect transistors based on few-layer Nb2SiTe4 show ambipolar transport with a similar magnitude of electron and hole current and a high charge-carrier mobility of ∼100 cm2 V–1 s–1 at room temperature. Optoelectronic measurements of the devices show clear response to an MIR wavelength of 3.1 μm with a high responsivity of ∼0.66 AW–1. These results establish Nb2SiTe4 as a good candidate for ambipolar devices and MIR detection.

研究领域: 材料科学 · 电子工程 · 光学
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2024 ·Vol. 35 ·期 23 ·1-10 · IF 2.8

Trivalent terbium host-sensitized orthoniobate green phosphor with high luminescence thermal stability for promising backlighting white light-emitting diodes

Ni Wei,Zhang Chuancheng,Liu Hailian,Wang Miaomiao,Zou Yong,Liu Wenpeng,Ding Shoujun

The development of narrowband green phosphors with high efficiency and stability plays an important role in the designing of high-performance backlight white light-emitting diode (WLED) devices. In this work, trivalent terbium host-sensitized orthoniobate green phosphor, TbNbO 4 , has been prepared using the traditional high-temperature solid-state reaction method. The phosphor has a monoclinic structure with the space group C2/c. Besides, the TbNbO 4 is revealed with a direct bandgap structure and the bandgap is determined to be 3.67 eV by first principle calculation. Under 353 nm UV excitation, TbNbO 4 phosphor shows strong and narrow-band green emission with center around 550 nm, attributed to the 5 D 4  →  7 F 5 transition of Tb 3+ ions. Furthermore, the results demonstrated that the phosphor exhibits favorable thermal stability and activation energy, with a notably high activation energy value of 0.24 eV. This observation suggests that the host-sensitized TbNbO 4 phosphor holds potential as narrow-band green-emitting alternative for backlighting white light-emitting diodes (WLED) display application.

CAS / MDL: 1313-96-8 12036-41-8
研究领域: 材料科学 · 光学工程
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CHEMICAL ENGINEERING JOURNAL · 2025 · IF 13.2

Narrow-band green nitride phosphor for wide color gamut backlighting

Xinyu Zhang,Wanyuan Li,Chao Wang,Lin Zhang,Shuxing Li,Rong-Jun Xie

β-Sialon:Eu 2+ (Si 6-z Al z O z N 8-z :Eu 2+ , 0 < z ≤ 4.2) has been recognized as an excellent narrow-band green phosphor for wide-color-gamut backlights, but it is quite difficult to realize high quantum efficiency when further reducing the bandwidth of β-Sialon:Eu 2+ to achieve high color purity. Herein, we propose an ingenious sintering method to minimize the trade-off between color purity and luminescence intensity of β-Sialon:Eu 2+ , and finally obtain ultra-narrow band β-Sialon:Eu 2+ with an emission maximum of 527 nm, a full width at half maximum of 44.9 nm and an external quantum efficiency of 37.3 % when z is reduced to 0.03. Structural analyses indicate that β-Sialon:Eu 2+ shows higher structural ordering and rigidity with decreasing the Al-O substitution ( i.e. , z value). By combining β-Sialon:Eu 2+ (z = 0.03), a red phosphor K 2 SiF 6 :Mn 4+ with a blue InGaN LED chip, white light-emitting diodes with a luminous efficacy of 93.91 lm W −1 and a color gamut as high as 101.2 % National Television System Committee standard were demonstrated, which are superior to those in color gamut (4.3–16.8 % up) by using commercial β-Sialon:Eu 2+ .

研究领域: 材料科学 · 光学工程
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International Journal of Applied Ceramic Technology · 2022 ·Vol. 20 ·期 3 ·1953-1962 · IF 2.328

Strong f–f excitation in hafnium germanate: Near-UV LED and cathode beam–pumped red phosphor with thermal robustness

Quansheng Wu,Shanshan Ye,Xufeng Zhou,Jianyan Ding

Developing narrowband red phosphors has always been a frontier topic in the phosphor community. In this study, a novel hafnium germanate red phosphor, BaHfGe 3 O 9 :Eu 3+ , was successfully synthesized by solid-state reaction method. The phase and crystal structure of BaHfGe 3 O 9 were investigated by the Rietveld refinement of powder X-ray powder diffraction. The band structure was analyzed by density functional theory calculations. Most importantly, the luminescence behavior of phosphors under near-ultraviolet (n-UV) light and cathode rays sources was studied in detail to explore the possibility of their applications in white light-emitting diodes and field emission display. The BaHfGe 3 O 9 :Eu 3+ phosphor exhibits strong f–f excitation and excellent thermal robustness due to Eu 3+ localization in the rigid lattice and asymmetric Ba 2+ sites. Under cathode rays and n-UV light excitation, BaHfGe 3 O 9 :Eu 3+ exhibits narrowband red light emission peaked at 610 nm. Moreover, BaHfGe 3 O 9 :Eu 3+ shows excellent saturation resistance and aging resistance. The performance of the LED lamp encapsulated by the BaHfGe 3 O 9 :Eu 3+ phosphor was studied. The results show that BaHfGe 3 O 9 :Eu 3+ is a potential red phosphor for multifunctional applications.

研究领域: 材料科学 · 光学工程
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Journal of Materials Chemistry C · 2017 ·Vol. 5 ·期 11 ·2910-2918 · IF 5.256

The design and preparation of the thermally stable, Mn4+ ion activated, narrow band, red emitting fluoride Na3GaF6:Mn4+ for warm WLED applications

T. T. Deng,E. H. Song,J. Sun,L. Y. Wang,Y. Deng,S. Ye,J. Wang,Q. Y. Zhang

Herein, a new red phosphor Na3GaF6:Mn4+ has been designed and synthesized by a facile two-step co-precipitation method at room temperature. Single crystal X-ray diffraction analysis reveals that the fluoride Na3GaF6 crystallizes in the P2(1)/n space group with a = 5.4760 Å, b = 5.6862 Å, c = 7.9009 Å, β = 90.309°, and z = 2. Upon blue or UV light excitation, the obtained phosphor Na3GaF6:Mn4+ emits intense and pure red fluorescence. The effects of raw materials, doping concentration and environmental temperature on its luminescence properties and crystal structure have been investigated and discussed in detail. Such a newly synthesized red phosphor shows excellent anti-thermal quenching behavior (∼118.8% of emission intensity at 150 °C relative to 25 °C) and good color stability upon blue light (∼467 nm) excitation. By using the Na3GaF6:Mn4+ phosphor as a red light component, a high-power stable warm white light-emitting diode (WLED, Ra = 81, CCT = 2966 K, luminous efficacy = 56.73 lm W−1) was fabricated, further evidencing the potential of the as-synthesized Na3GaF6:Mn4+ phosphor for white LED applications.

研究领域: 材料科学 · 光学工程
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Inorganic Chemistry Frontiers · 2022 ·Vol. 9 ·期 24 ·6418-6424 · IF 7.779

A blue-emitting Eu2+-activated BaZnAl10O17 phosphor for white light emitting diodes: structure and luminescence properties

Tianqing Zhang,Xiliang Jiang,Rujia Chen,Bingyan Liu,Weiling Yang,Ce Li,Hai Lin,Huisheng Liu,Chun Li,Fanming Zeng,Zhongmin Su

In the process of developing high-performance LCDs, narrow-band emitting phosphors with excellent performance are indispensable. In this study, a narrow-band blue phosphor BaZnAl10O17:Eu2+ with an emission peak at 433 nm (which can be excited by near-ultraviolet light) and a full width at half maximum of 46 nm was found. The synthesized BaZnAl10O17:Eu2+ phosphor exhibits low thermal quenching behavior. There is only 16.4% loss in emission intensity at 423 K compared to the initial intensity at room temperature. Using the narrow-band emission phosphor BaZnAl10O17:Eu2+ as the blue light source, the prepared white LED device excited using a near-ultraviolet chip emits high-brightness white light (CCT = 4436 K, Ra = 93.96), whose CIE coordinates are (0.3387, 0.3785) and CG can reach 99% of the NTSC standard. The narrow-band blue-emitting BaZnAl10O17:Eu2+ phosphor has potential application value in white light-emitting diodes.

研究领域: 材料科学 · 光学工程
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Advanced Optical Materials · 2023 ·Vol. 11 ·期 16 ·2300302 · IF 9

Ion Migration as a New Paradigm to Boost Self-Driven Perovskite Narrowband Photodetectors

Shanshan Yu,Yu Li,Jian Wang,Kai Zhang,Zedong Lin,Wei Qian,Ziqi Deng,Fumin Guo,Mingde Li,Lionel Vayssieres,Makhsud I. Saidaminov,David Lee Phillips,Shihe Yang

Halide perovskite narrowband photodetectors based on a charge collection narrowing mechanism have emerged as a new class of optoelectronic devices for monochromatic imaging. However, improving the figures-of-merit of such narrowband photodetectors remains challenging due to the inability to manipulate the major material players in the elusive photoresponse process. Here, a novel approach of manipulating ion migration to enhance the narrowband photoresponse of self-driven p-i-n type photodetectors is taken by intentionally adding mobile ions into the formamidine and methylamine mixed cation perovskite layer. The excess mobile ions reduce the activation energy of ion migration, and this facilitated migration orchestrates the ions in the perovskite layer to re-engineer the energy band, and thus modulates the charge separation and collection energetics and kinetics, leading to an unprecedented boost of the narrowband photoresponse. The photodetector based on this approach achieved a peak responsivity of as high as 112.41 mA W −1 at 820 nm at zero bias with a full-width at half maximum of only 22 nm and an over 3-fold improvement in the spectral rejection ratio, making it highly promising for the next-generation color imaging devices.

研究领域: 材料科学 · 光学工程
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OPTICS LETTERS · 2024 ·Vol. 49 ·期 9 ·2245-2248 · IF 3.1

Mn2+/Mg2+ co-doped AlON ceramic with ultra-narrowband green emission combining high transparency toward a wide gamut backlight application

Xiaolan Zhou,Xiaolan Zhou,Shengyuan Chen,Shengyuan Chen,Cong Zhang,Cong Zhang,Xu Huang,Xu Huang,Kailei Lu,Kailei Lu,Jianqi Qi,Jianqi Qi,Jianqi Qi,Tiecheng Lu,Tiecheng Lu,Tiecheng Lu,Tiecheng Lu

Narrowband green-emission, combined with superior physicochemical stability and thermal performance, is regarded as a common pursuit in backlight display applications. However, mainstream phosphor-converted materials composed of resin or silicone resin easily encounter the dilemma of thermal decomposition and chemical corrosion for practical use. To overcome this problem, in this work, Mn2+/Mg2+ co-doped AlON ceramic is successfully realized with ultra-narrowband green-emission and high transparency. The luminescent property of AlON: Mn2+–Mg2+ ceramic exhibits narrowband green emission centered at 509 nm with a full width at half maximum of 36 nm, which is smaller than the corresponding powder counterpart (44 nm). Moreover, AlON: Mn2+–Mg2+ ceramic presents a wide color gamut (103.6%) and high color purity (74%). Concurrently, high transmittance of this ceramic, at 82%, unveils a potential innovation in the display technology field. This work may facilitate the development of narrowband green light-emitting converters based on AlON: Mn2+–Mg2+ transparent ceramics in large color gamut backlight display applications.

研究领域: 材料科学 · 光学工程 · 显示技术
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