Junyu He,Peilong Xu,Ruifu Zhou,Hao Li,Hongliang Zu,Jun Zhang,Yuanbin Qin,Xuhai Liu,Fengyun Wang
Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary-cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single-cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface-to-volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire-based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo-to-dark current ratio of 1.2 × 10 4 , a photo responsivity of 2.8 × 10 3 A W –1 , and a high detectivity of 2.4 × 10 16 Jones. This study not only demonstrates the opportunity to construct new-generation transparent electronics based on 1D metal oxide nanowires but also sheds new light on how to further decrease the annealing temperature of metal oxide nanowire devices for low-temperature fabrication processes.
The rapid development of artificial intelligent and internet of things calls for high-performance multifunctional devices for synchronous detection of a wide variety of environmental signals, such as gas, light, and humidity. Herein, highly crystallized tin dioxide (SnO 2 ) microwires (MWs) with low density of point defects are synthesized by the chemical vapor deposition method and constructed into a multifunctional device for photo and humidity sensing. The device shows excellent photoelectric performances, for example, ultralow dark current of ≈10 −13 A, ultrahigh on–off ratio of >10 7 , UV/visible rejection ratio of R 300 nm / R 400 nm > 10 7 , specific detectivity ( D *) of 1.16 × 10 15 Jones, linear dynamic range (LDR) of 152 dB, high responsivity of 18 A W −1 , and fast photoresponse speed of t rise / t decay = 2.7 µs/2.5 ms at 5 V bias. Furthermore, the p-CuI/n-SnO 2 heterojunction shows outstanding self-powered properties, such as responsivity of 8.98 mA W −1 , specific detectivity of 1.98 × 10 12 Jones and LDR of 106 dB at 0 V bias. Additionally, the SnO 2 MWs also show high sensitivity to ambient humidity changes. Therefore, the SnO 2 MWs show high potential for multifunctional applications, such as UV photodetector and humidity sensor.
危险品化学品经营许可证（带存储）