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JOURNAL OF COLLOID AND INTERFACE SCIENCE · 2022 · IF 9.965

Halloysite nanotube-based self-healing fluorescence hydrogels in fabricating 3D cube containing UV-sensitive QR code information

Bo Zhang,Shanshan Li,Yuan Wang,Yonggang Wu,Hailei Zhang

With the evolution of information technology, the development of smart materials for the information storage and encryption is in urgent need. Herein, halloysite nanotubes (HNTs)-based self-healing hydrogels were facilely prepared by using aryl arylboronic acid-bearing tetraphenylethylene (TPE) as crosslinker agent, in which the HNTs were covalently bonded into the polymeric matrix. With the addition of HNTs, the obtained hydrogel (H2) shows improved compression resistance performance and self-healing property, which can be customed in certain shapes. The TPE-crosslinked hydrogels (H1 and H2) are able to emit bright blue fluorescence centering at 457 nm when exposed to 365 nm light. By holding together with 1,4-phenylenebisboronic acid-crosslinked hydrogels (H3) with non-fluorescence property, the obtained cube is able to store UV-sensitive QR code information which is potentially to be recognized by QR code scanner or other smart tools.

研究领域: 材料科学 · 信息加密技术
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ACS Applied Materials & Interfaces · 2025 · IF 8.2

High-Performance Broadband Mixed-Dimensional Phototransistors Based on the Boron Nitride Quantum Dots/MoSe2 Heterostructure with Enhanced UV Sensitivity

Huiying Chen,Nan Zhang,Chunlu Chang,Zhilin Liu,Yaru Shi,Xingyu Zhao,Shaojuan Li,Bin Duan,Hongwei Liang

Two-dimensional (2D) semiconductors have been of great interest in phototransistors in recent years due to their unique optoelectronic and electronic properties. However, their discernible spectral range and the efficiency of light absorption are usually restricted. Here, we present phototransistors based on mixed-dimensional heterostructures formed by zero-dimensional (0D) boron nitride quantum dots (BNQDs) and molybdenum diselenide (MoSe2), which have high responsivity (R), specific detectivity (D*), and external quantum efficiency (EQE), especially in the ultraviolet (UV) spectral range. The heterostructure phototransistors showed a 440% increase in R at 375 nm (from 5.6 to 24.7 A/W) and a 260% increase in D* (from 3.3 to 8.7 × 1011 Jones) compared to bare MoSe2 at the wavelength of 375 nm and a bias of 1 V. A series of characterization and comparison experiments show that charge transfer on BNQDs/MoSe2 results in the photogating effect and optical gain. Meanwhile, the high-performance BNQDs/MoSe2 heterostructure phototransistors exhibit broadband imaging capabilities and thus hold great promise for ultrasensitive light detection, neuromorphic visual sensing, and in-sensor computing applications.

CAS / MDL: 10043-11-5
研究领域: 材料科学 · 光电子学
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