MATERIALS LETTERS
·
2021
·
IF 3.423
Dan Liu,Sen Wen,Yuxiao Guo,Xingtian Yin,Wenxiu Que
Subject to the complexity and high cost of traditional semiconductor materials and manufacturing processes, the features of facile solution process with low cost have made the colloidal quantum dots (CQDs) more competitive, in which HgTe nanocrystals can be tuned as a potential in infrared region and achieve a great photoresponsivity. Herein, we reported the synthesis and characterization of HgTe CQDs materials by a facile solution process, and explored the relationship between the nanocrystal size and the reaction temperature and time, as well as the effect of the ligand exchange on the thickness of the HgTe CQDs film. The as-fabricated photoconductive device showed a high photoresponse even under a weak light, which provides a direction for the next-generation infrared photodetectors.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
半导体物理
·
凝聚态物理
✓ 已验证
DOI
高影响因子
IEEE TRANSACTIONS ON ELECTRON DEVICES
·
2023
·Vol. 70
·期 8
·4251-4256
·
IF 3.1
Biao He,Yongkai Jing,Xinfa Zhu,Chao Fan,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
In this work, light detectors utilizing p-type tin monosulfide (p-SnS) few layers with an Au/SnS/Ag Schottky structure are demonstrated. These detectors exhibit broad-spectrum light detection capabilities spanning the visible to near-infrared (NIR) wavelength range. Notably, under NIR 850 nm illumination, the detectors exhibit exceptional photodetection performance with an ultrahigh responsivity of up to 1652.87 $\text{A}\cdot \text{W}^{-{1}}$ , an extremely specific detectivity of $8.05\times 10^{{12}}$ cm $\cdot $ Hz $^{\text {1/{2}}}\cdot \text{W}^{-{1}}$ , and a rapid response time of approximately 6.5 ms. These characteristics surpass those of most 2-D materials-based detectors and even outperform commercial InGaAs (Hamamatsu, InGaAs G8370-85) and Silicon (Hamamatsu, Si S9119-01) detectors. The remarkable photoresponse is attributed to the SnS/Ag Schottky structure, which facilitates the separation of excited electron–hole pairs. Our findings suggest a promising route for developing high-performance optoelectronics based on p-SnS.
研究领域:
光电子学
·
半导体物理
·
纳米材料科学
·
器件物理
·
光学工程
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Wenfeng Sun,Shaolong Liu,Caizheng Wang,Xiaotao Zu,Sean Li,Xia Xiang
Lead-free perovskites are considered to be candidates for next-generation photodetectors, because of their excellent charge carrier transport properties and low toxicity. However, their application in integrated circuits is hindered by their inadequate performance and size restrictions. To aim at the development of lead-free perovskite-integrated optoelectronic devices, a CsAg2I3/silicon (CAI/Si) heterojunction is presented in this work by using a spatial confinement growth method, where the in-plane growth of CAI microbelts with high-quality single-crystal characteristics is primarily dependent on the concentration of surrounding precursor solution. The fabricated photodetectors based on the CAI/Si heterojunctions exhibit a broad-spectrum detection capability in the ultraviolet–visible–near-infrared (UV-vis-NIR) range. In addition, the photodetectors show good photoelectric detection performance, including a maximum responsivity of 48.5 mA/W and detectivity of 1.13 × 1011 Jones, respectively. Besides, the photodetectors have a rapid response of 6.5/224 μs and good air stability for over 2 months. This work contributes a new idea to design next-generation optoelectronic devices with high integration density.
研究领域:
材料科学
·
光电子学
·
半导体器件
·
纳米技术
·
光电探测
✓ 已验证
DOI
高影响因子
Journal of Nanomaterials
·
2023
·Vol. 2023
·期 1
·4595819
·
IF 3.791
Jinmei Jia,Huan Liu,Jijie Zhao,Yuxuan Du,Shuai Wen
Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of silicon in machine vision, autonomous vehicles, and night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) are promising materials. Because of the adjustable bandgap, it responds over a wide spectral range. However, the construction of a high-quality junction between Si and HgTe CQDs continues to be difficult, thus restricting the scope of its application. In this article, we describe the synthesis, characterization, and correlation of HgTe CQDs with reaction temperature and nanocrystal size. We then fabricated HgTe-CQDs/silicon infrared photodiodes and discussed how the silicon resistivity affected their performance. We found that the devices prepared from 9.1 nm HgTe quantum dots synthesized at 80°C and a silicon substrate with a resistivity of 20–50 Ω ·cm has optimal performance parameters. This results in a responsivity of 0.2 mA/W for 1,550 nm incident light at room temperature. These results provide a direction for future silicon-compatible HgTe quantum dot infrared optoelectronics.
研究领域:
光电子学
·
纳米技术
·
半导体器件
·
红外探测
·
材料科学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2018
·Vol. 28
·期 33
·1802707
·
IF 13.325
Fakun Wang,Leigang Li,Wenjuan Huang,Liang Li,Bao Jin,Huiqiao Li,Tianyou Zhai
Infrared detection at optical communication wavelength is of great significance because of their diverse commercial and military communication applications. The layered Bi 2 Se 3 with a narrow band gap of 0.3 eV is regarded as a promising candidate toward high-performance terahertz to infrared applications. However, the controllable synthesis of large-size ultrathin Bi 2 Se 3 flakes remains a challenge owing to complex nucleation process and infrared telecommunication photodetectors based on Bi 2 Se 3 flakes are rarely reported. Here, large size (submillimeter: 0.2–0.4 mm in lateral dimensions) and ultrathin (thickness: 3 nm to few nanometers) 2D Bi 2 Se 3 flakes with high crystal quality are obtained by suppressing the nucleation density. More importantly, back-gate field-effect transistor based on Bi 2 Se 3 flake exhibits an ultrahigh on/off current ratio of 10 6 and competitive mobility of 39.4 cm 2 V −1 s −1 . Moreover, excellent on/off ratio of 972.5, responsivity of 23.8 A W −1 , and external quantum efficiency of 2035% are obtained from Bi 2 Se 3 -based photodetector at 1456 nm in the E-band of the telecommunication range. With controlled morphology and excellent photoresponse performance, the Bi 2 Se 3 photodetector shows great potential in the optoelectronic field including communications, military, and remote sensing.
研究领域:
光电子学
·
纳米材料
·
红外探测
·
光子学
·
半导体器件
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry C
·
2022
·
IF 4.177
Luji Li,Gang Ye,Tianyuan Luo,Xiayan Chen,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang
The detection of broadband spectroscopy is a huge challenge for modern optoelectronics, especially for extremely high- or low-energy photons. For metal halide perovskites significant progress has been made in high-energy photons such as X-rays, but there is little exploration of the perovskites in the high-performance detection of low-energy photons, especially mid- or far-infrared photons. Most infrared photodetectors suffer large dark currents, and perovskite photodetectors’ performances are significantly limited by ion migration. Here, a facile solution evaporation method is developed to grow a centimeter-scale zero-dimensional (0D), lead-free perovskite Cs3Bi2I9 single crystal for high-performance mid-infrared photodetectors with ultralow dark current drifts. The 0D Cs3Bi2I9 perovskite single crystal (PSC) photodetector shows an ultralow dark current drift (1.67 × 10–17 A cm–2 V–1 s–1, 9 orders of magnitude smaller than that of MAPbI3) and ultralow power consumption (smaller than 1 pA at 1 V bias) for greatly inhibited ion migration. The photodetector achieves effective photodetection from the ultraviolet to the mid-infrared (from 343 to 4000 nm) at room temperature based on the photoelectric and photobolometric effects with the best responsivity of 3.15 mA/W and detectivity of 8.7 × 108 jones at the wavelength of 343 nm at 0.033 mW/cm2. This work opens a door for low-dimensional perovskite-based mid-infrared detectors and provides a new path for the development of infrared perovskite photonics.
研究领域:
光电子学
·
材料科学
·
钙钛矿光子学
·
红外探测
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）