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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2019 ·Vol. 30 ·期 18 ·17440-17446 · IF 2.195

One-step fabrication of InxGa1−xSb nanowires by vapor transport method

Wang Tianxiong,Meng Xianquan

We try to synthesize In x Ga 1−x Sb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.

研究领域: 材料科学 · 纳米科技 · 半导体物理 · 固体电子学 · 晶体生长

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Advanced Optical Materials · 2024 ·Vol. 12 ·期 32 ·2401539 · IF 8

Halogen-Mixed 1D CsPbIBr2 Photodetectors for Enhanced Ultraweak Light Detection

Qianjin Wang,Zhilin Xiang,Peizhi Yang,Yingkai Liu,Qiuhong Tan

Metal halide perovskites recently have emerged as a promising candidate for photodetection due to their exceptional photoelectric performance. However, the high dark current in these materials has hindered their practical application to imaging. In this study, a novel halogen-mixed CsPbIBr 2 microwire photodetector that has a remarkable reduction of dark current by over 100-fold (compared to CsPbBr 3 ), along with a substantial increase in photocurrent, which yields a significantly improved on/off ratio of 6.56 × 10 4 , is developed. More importantly, the halogen-mixed perovskite photodetector exhibits enhanced photodetection performance, including a high responsivity of 133 A W −1 and a remarkable specific detectivity of 4.02 × 10 12 Jones even under ultraweak light conditions as low as 4.5 nW cm −2 . More specifically, high-resolution images are successfully obtained under ultraweak light conditions. The combined analysis of experimental results and first-principles calculation attribute the excellent performance of the CsPbIBr₂ microwire photodetector to a significant reduction in dark current by suppressing ion migration and increasing carrier effective mass, and a remarkable increase in photocurrent resulting from reduced bandgap and enhanced light absorption, as compared to CsPbBr 3 . This research represents a significant advancement in the development of high-performance 1D perovskite-based photodetectors, with promising implications for ultra-weak light imaging applications.

研究领域: 光电子学 · 材料科学 · 纳米器件 · 半导体物理 · 生物医学成像

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One-step fabrication of InxGa1−xSb nanowires by vapor transport method

Halogen-Mixed 1D CsPbIBr2 Photodetectors for Enhanced Ultraweak Light Detection