Antimony selenide (Sb 2 Se 3 ) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb 2 Se 3 . The defects originating from this process significantly impact the quality of the absorber layer, leading to the degradation in the power conversion efficiency (PCE) of the device. Herein, the evolution of pre-selenization using rapid thermal processing (RTP) on the crystallization quality of Sb 2 Se 3 film is systematically investigated. By optimizing the initial nucleation process during pre-selenization, resulting in a reduction of grain boundaries and nucleation centers, the Sb 2 Se 3 thin films demonstrate enhanced crystallinity and pinholes-free morphology. It is found that the improved quality of the grain interior and interfaces of the Sb 2 Se 3 absorber can mitigate intrinsic defects within the bulk layer, and passivate interfacial defect recombination. As a result, the short circuit current density ( J SC ) is elevated to 28.97 mA cm −2 , and a competitive efficiency of 9.03% is achieved in Sb 2 Se 3 device. This study provides comprehensive insight into the process of crystal growth and the mechanism for defect suppression, which holds guiding significance for advancing photovoltaic performance.
The power conversion efficiency (PCE) of tin-based perovskite solar cells (TPSCs) was significantly improved when polyvinyl pyrrolidone (PVP) was doped into the formamidinium tin iodide (FASnI 3 ) layer with an optimized doping mass. After doping, the FASnI 3 grain size, film smoothness and average carrier lifetime were largely enhanced, which demonstrate the crystallization quality improvement to FASnI 3 . The champion PCE of the enhanced TPSC was improved to 7.83%, which is relatively 27% larger than that of the control, 6.15%. After continuous storage for 15 days, the PCE of the enhanced TPSC remained 74.4% of its original value. Using the finite difference time domain (FDTD) simulation method, we demonstrated that the light absorption ratio of the FASnI 3 :PVP layer was larger than that of the FASnI 3 , and the photo-generated carrier density of the enhanced TPSC was approximately 2% ∼ 3% larger than that of the control. The ultimate efficiency of the enhanced TPSC was calculated to be 26.23%. It is potential to dope PVP into FASnI 3 to further enhance the device performance of TPSCs.
危险品化学品经营许可证（带存储）