Materials
·
2023
·Vol. 16
·期 7
·2869
·
IF 3.4
Quanzhen Sun,Jianlong Tang,Caixia Zhang,Yaling Li,Weihao Xie,Hui Deng,Qiao Zheng,Jionghua Wu,Shuying Cheng
Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells.Keywords:Cd-free flexible CZTSSe/ZnO solar cells;ZnO buffer layer;CZTSSe/ZnO heterojunction;buffer layer optimization
研究领域:
材料科学
·
太阳能
·
环境科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 31
·期 1
·677-683
·
IF 2.195
Wang Jing,Shen Bowen,Zhu Kongjun,Qiu Jinhao
With the ever increasing requirements for the structural health monitoring systems, the deposition of the piezoelectric films on the metallic or structural materials has turned out to be an important issue. Pb(Mg, Nb)O 3 -PbTiO 3 films with different buffer layers, i.e., in situ NiO, pre-fabricated NiO and LaNiO 3 , were successfully deposited on the Ni foil via the chemical solution deposition. The crystal structures and electric performances showed evident dependence on the buffer layer. Pre-deposited NiO and LaNiO 3 efficiently prevented the diffusion and complex reactions occurring at the interface, offered abundant nucleation sites, and thus helped the formation of pure high-qualified perovskite PMN-PT films at higher annealing temperatures.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Nano Energy
·
2016
·
IF 11.553
Lin Fan,Yi Ding,Biao Shi,Changchun Wei,Dekun Zhang,Jiangsheng Xie,Xuegong Yu,Baojie Yan,Ying Zhao,Xiaodan Zhang
A thin PC 61 BM buffer layer (BL) has been introduced between TiO 2 electron transporting layer and perovskite absorber in n-i-p planar perovskite solar cells (PSCs). We have found that the elastic nature of the PC 61 BM BL promotes the formation of porous PbI 2−x Cl x thin film with loose structure, which is vital in the following formation of high quality, uniform perovskite films with large grain size. In addition, it has been demonstrated that the thin PC 61 BM BL also flattens the TiO 2 surface, passivates the defects or dangling bands parasitizing on the TiO 2 surface, and optimizes the device band alignment. As a result, the device efficiency has been enhanced dramatically from ~8.37% to 15.44%. Moreover, devices show a good stability over 400 h and reproducibility in 20 pieces fabricated with the same procedure, which implies that this finding is benefit for fabricating highly efficient PSCs. We introduced a thin PC 61 BM buffer layer between the TiO 2 electron transport layer and the perovskite absorber in n-i-p planar perovskite solar cells , which facilitates the construction of a porous PbI 2−x Cl x precursor film, and thus promotes the following realization of high quality, uniform perovskite films with large grain size and improves the solar cell efficiency significantly.
研究领域:
材料科学
·
能源技术
·
光伏器件
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Zitong Feng,Shuo Sun,Siyu Zhang,Wanlang Zou,Nan Hang,Linpei Zhou,Xiangyu Wei,Yuxia Sun,Jian Wen,Hongri Liu
Sb 2 S 3 has been paid extensive attentions as absorber for solar cells. Comparing with some oxides , CdS exhibits excellent compatibility to Sb 2 S 3 therefore is most commonly used as buffer layer (BL) materials for Sb 2 S 3 solar cells. Proper passivation can enhance the performance of CdS buffer layer thus raising the performances of Sb 2 S 3 solar cells. Herein, we put forward a self-passivation strategy to enhance the performance of CdS by a two-step deposition process to fabricate the self-passivated CdS BL. First, we adopted spin coating combined with annealing process to prepare flaked CdS on FTO, then we performed passivation process to the CdS by depositing another layer of CdS with chemical bath deposition (CBD) method. After Sb 2 S 3 was deposited on the self-passivated CdS by hydrothermal method , a solar cell with FTO/CdS (∼90 nm)/Sb 2 S 3 (160 nm)/Spiro-OMeTAD(48 nm)/Ag(32 nm)structure was obtained by deposition of hole transport layer and Ag electrodes. Comparing with the single spin-coating processed CdS BL or single chemical bath deposited CdS BL, the self-passivated CdS presents better performance. The CBD process presents distinctive passivation effects to the first layer. In consequence, we obtained the highest PCE of 6.04 % in the Sb 2 S 3 solar cells on the self-passivated CdS BL. The present work supplies a unique route to enhance the performances of CdS buffer layer.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
Physica Status Solidi-Rapid Research Letters
·
2023
·
IF 2.8
Yawei Wang,Lingling Wang,Yanqin Wang,Xiangyang Zhao,Xingyu Zhang,Xintong Zhang,Yichun Liu
Replacing the traditional CdS buffer layer with more environmentally friendly materials is an urgent issue for environment-friendly CZTSSe solar cells. Herein, a nontoxic, flexible, and conductive organic molecular semiconductor PCBM to replace CdS is used and a Cd-free CZTSSe solar cell is obtained. By introducing mild spin-coated ZnO window layers, the damage of PCBM in conventional sputtering ZnO process is effectively avoided, and a higher efficiency than previously reported organic semiconductor buffer layer systems and comparable to CdS buffer layer devices are achieved. The flexible PCBM covers the surface of the CZTSSe absorber layer densely and forms a flatter film surface, which is beneficial for the following ZnO deposition. The CZTSSe/PCBM interface exhibits a typical “spike-like” energy band alignment with a conduction band offset value of only 0.1 eV. Compared with CZTSSe/CdS interface, the CZTSSe/PCBM heterojunction possesses larger interfacial recombination resistance and a longer carrier lifetime. The ideal coating ability, suitable energy band alignment, as well as the better interface carriers transfer behavior suggest that the organic molecular semiconductors can be used instead of the CdS buffer layer to pave the way for truly environment-friendly kesterite photovoltaic devices.
研究领域:
材料科学
·
可再生能源
·
环境科学
✓ 已验证
DOI
高影响因子
Materials Science and Engineering B-Advanced Functional Solid-State Materials
·
2015
·
IF 2.169
Wenfei Shen,Chunpeng Yang,Xichang Bao,Liang Sun,Ning Wang,Jianguo Tang,Weichao Chen,Renqiang Yang
A simple, solution-processed ultrathin CuO X anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO X was the composite of CuO and Cu 2 O. The CuO X modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO X layer was optimized by varying the thickness of CuO X films through changing solution concentration. With P3HT:PC 61 BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO X anode buffer layer, compared with that of PEDOT:PSS layer. The CuO X layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC 71 BM as the active layer. The long-term stability of CuO X device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO X film can act as an efficient anode buffer layer for high-efficiency OSCs.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2018
·
IF 4.439
Penghao Hu,Zhuye Jia,Zhonghui Shen,Peng Wang,Xiaoru Liu
To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core–shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core–shell structured TO@BT nanoparticles with crystalline TiO 2 buffer layer coated on BaTiO 3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3–5 nm buffer layer of TO is effective in increasing both the ε and E b in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm 3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core–shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF HAZARDOUS MATERIALS
·
2022
·
IF 14.224
Hao Dong,Li Zhang,Penghui Shao,Zichao Hu,Ziwei Yao,Qingying Xiao,Dewei Li,Min Li,Liming Yang,Shenglian Luo,Xubiao Luo
Given the large amount of toxic Cr(VI) wastewater from various industries, it is urgent to take effective treatment measures. Adsorption has been regarded as highly desirable for Cr(VI) removal, but the effectiveness of most adsorbents is significantly dependent on pH value, in which precipitous performance drop and even structural collapse generally occur in strong acidic/alkaline aqueous. Thus, maintaining high adsorption performance and structural integrity over a wide pH range is challenging. To efficiently remove Cr(VI), we designed and prepared of an acid-base resistant metal-organic framework (MOF) Zr-BDPO, by introducing weak acid-base groups (-NH-, -N= and -OH) onto the ligand. Zr-BDPO achieved a maximum adsorption capacity of 555.6 mg · g −1 and retained skeletal structure at pH= 1–11. Interestingly, all these groups can generate conjugate acid-base pairs by means of H + and OH - in the external solution and then form buffer layer. The removal of Cr(VI) at a broad range of pH values primarily via hydrogen bonds between -NH- and -OH, and the oxoanion species of Cr(VI) is unusual. This strategy that insulating high concentrations of acids and bases and relying on hydrogen bonds to capture Cr(VI) oxoanions provides a new perspective for actual Cr(VI) wastewater treatment .
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Energy Storage Materials
·
2025
·
IF 20.2
Kai Zhang,Zeyu Wang,Zhenming Xu,Xing Zhou,Guodong Li,Zhe Mei,Yi Yu,Yonggang Wang,Congxiao Wang,Guannan Zhu,Yong-Ning Zhou,Yongyao Xia
Lithium cobalt oxide (LCO) has received considerable attention due to its high volumetric energy density, particularly at elevated cut-off voltages up to 4.7 V. However, the poor cyclic stability of high-voltage LCO limits its practical application, primarily due to detrimental phase transitions above 4.55 V, oxygen loss upon deep delithiation, and the interfacial side reactions. In this study, we introduce an in-situ formed strain buffer layer on LCO particles by CePO 4 coating to improve its high-voltage performance. The coated CePO 4 layer reacts with LCO particles spontaneously to generate a lattice-matched Li 8 CeO 6 phase, which can facilitate Li + transportation and relieve near-surface intrinsic stress. With less lattice strain, the undesirable phase transition and notorious surface degradation are suppressed significantly. Moreover, strong covalence of Ce 4f and O 2p bonds, and delocalized electrons in Ce-O 6 octahedral configuration help to suppress oxygen redox at 4.6 V. A high capacity retention of 93.3% after 300 cycles at 4.6 V and 88% after 100 cycles at 4.7 V is harvested. This strategy of constructing a strain buffer layer near the particle surface provides a novel insight for stabilizing the high-voltage LCO and paves the way for further modification of other cathode materials.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2024
·
IF 8.1
Shuting Li,Yuanyuan Liu,Changyang Liu,Ke Xue,Liuzhen Bian,Shengli An
Gadolinium-doped ceria (GDC) is the most widely used buffer layer to prevent the reaction between YSZ electrolyte and La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF) cathode for commercial solid oxide fuel cell (SOFC). However, conductivity and sintering activity are vital to cell performance. In this paper, Ca 2+ and F − co-doped GDC (Ca 0.03 Gd 0.17 Ce 0.8 F 0.06 O 1.84-δ , CGDCF) is used as a buffer layer to improve the performance and stability of SOFC. The co-doped F − and Ca 2+ significantly improve the sintering properties and oxygen ion transport of traditional GDC material. Meanwhile, the optimized sintering temperature is 1300 °C, with the lowest ohmic resistance . The peak power density of a cell with a CGDCF buffer layer reaches 1.809 W cm −2 at 850 °C, which is 37 % higher than that of GDC. In addition, the cell with the CGDCF buffer layer exhibits excellent stability during the 150 h test owing to the lower migration of La and Sr elements. Thus, the Ca 2+ and F − co-doped GDC oxide emerges as a promising material for buffer layer applications.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
SOLID-STATE ELECTRONICS
·
2016
·
IF 1.345
Xu Li,Yue Lu,Li Guan,Jiantao Li,Yichao Wang,Guoyi Dong,Aiwei Tang,Feng Teng
Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu 2 S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage ( I - V ) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2021
·
IF 4.126
Shengbiao Sun,Zhicheng Shi,Liang Liang,Tong Li,Shulei Zhang,Wenfeng Xu,Mingli Han,Meiyu Zhang
Paraelectric/ferroelectric bilayer composites are promising candidates for high-performance dielectric capacitors. However, the energy densities of these composites need to be further improved to satisfy the miniaturization of electronic devices. Herein, an Al2O3/P(VDF–HFP) buffer layer is inserted between a paraelectric PMMA layer and a ferroelectric P(VDF–HFP) layer, forming a novel trilayer structure. It is interesting to find that the buffer layer effectively alleviates the huge electric field gap between the P(VDF–HFP) layer and PMMA layer, yielding substantially improved breakdown strengths (>600 kV/mm), which are over 140% that of the bilayer P(VDF–HFP)/PMMA composite (∼425 kV/mm). In addition, the introduction of the buffer layer also results in improved interfacial polarization, hence, the moderately elevated permittivity. Consequently, a high energy density of 10.03 J/cm3, which is about 260% that of the bilayer P(VDF–HFP)/PMMA composite (∼3.9 J/cm3), is achieved at 600 kV/mm. This work offers a facile strategy to achieve dielectric composites with high breakdown strengths, which is illuminating for the design of high-voltage energy-storage capacitors.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）