ACS Applied Materials & Interfaces
·
2015
·
IF 6.723
Fangzhou Zhou,Fangqin Zeng,Xu Liu,Fangyang Liu,Ning Song,Chang Yan,Aobo Pu,Jongsung Park,Kaiwen Sun,Xiaojing Hao
Back contact modification plays an important role in improving energy conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, an ultrathin carbon layer is introduced on molybdenum (Mo)-coated soda lime glass (SLG) prior to the deposition of CZTS precursor to improve the back contact and therefore enhance CZTS solar cell efficiency. By introducing this layer, the short circuit current (Jsc) and device conversion efficiency increase for both nonvacuum (sol–gel) and vacuum (sputtering) methods. Specifically, for the sol–gel based process, Jsc increases from 13.60 to 16.96 mA/cm2 and efficiency from 4.47% to 5.52%, while for the sputtering based process, Jsc increases from 17.50 to 20.50 mA/cm2 and efficiency from 4.10% to 5.20%. Furthermore, introduction of this layer does not lead to any deterioration of either open circuit voltage (Voc) or fill factor (FF).
研究领域:
材料科学
·
太阳能技术
·
薄膜电池研究
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Chunkai Wang,Ting Wang,Yue Liu,Mengge Li,Ding Ma,Zhanhui Ding,Yan Zhu,Yuting Sun,Xiaofei Sun,Liyuan Shi,Ning Ding,Yongfeng Li,Bin Yao
To improve the performance of Cu2ZnSn(S,Se)4 solar cells, a strategy is proposed to improve the quality of absorber and back interface simultaneously by substituting V-doped Mo (Mo:V) for a conventional Mo back electrode and incorporating Ag into the Cu2ZnSn(S,Se)4 (ACZTSSe) absorber in this work. Since p+-type V-doped MoSe2 (MoSe2:V) is formed in the site between the absorber and Mo:V during selenization, the conventional Mo/n-MoSe2 back contact is modified to Mo:V/p+-MoSe2:V, a back surface passivation field (BSPF) is established at the back interface, the band bending of MoSe2:V is downward and that of bottom of the absorber is upward. Further investigation reveals that the back contact modification and Ag doping have a synergistic effect on inhibiting carrier recombination, decreasing series resistance and increasing shunt resistance, thereby leading to the PCE of device without antireflection coating increased from 8.61 to 10.98%, which is larger than the sum of increase in PCE induced by Ag doping alone (8.61 to 9.66%) and back contact modification alone (8.61 to 9.63%). It is demonstrated that the synergistic effect stems mainly from the strengthened BSPF and the further reduced back contact barrier height. The former is due to the increased difference in work function (WF) between MoSe2:V and absorber induced by the reduced WF of the absorber after Ag doping and the raised WF of MoSe2:V after V doping. The latter is due to the downshifted valence band maximum of absorber after Ag doping. This work highlights the synergistic effect of back contact modification and Ag doping on improving the performance of CZTSSe solar cells and also provides an effective way to suppress carrier recombination.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2023
·Vol. 52
·期 8
·5422-5429
·
IF 2.1
Xu Jiaxiong,Wu Xiaoshuai
Chalcogenide Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a promising absorber material for photovoltaic applications. When CZTSSe thin film is deposited on an Mo substrate, a Mo(S,Se) 2 layer easily forms between the CZTSSe and the Mo, which is detrimental to the back contact property of the CZTSSe. This work proposes a useful way to inhibit the formation of Mo(S,Se) 2 by sputtering a CuCrO 2 layer on a Mo-foil substrate before the deposition of the CZTSSe. The effects of CuCrO 2 thickness on the crystalline structures, morphologies, and electrical properties of the fabricated samples were studied. The results showed that the insertion of the CuCrO 2 layer prevented the formation of Mo(S,Se) 2 . As the thickness of the CuCrO 2 increased, the thickness of the Mo(S,Se) 2 layer decreased. The Mo(S,Se) 2 layer was absent from the cross-sectional scanning electron microscopy image when the CuCrO 2 thickness exceeded 85 nm. The back contact resistance of CZTSSe decreased monotonously as the CuCrO 2 layer thickened due to the reduction in the Mo(S,Se) 2 layer thickness. Therefore, by inserting a CuCrO 2 layer to separate the CZTSSe and the Mo-foil, the formation of the Mo(S,Se) 2 layer between them was effectively suppressed, and the back contact properties of the CZTSSe thin film were significantly enhanced.
研究领域:
材料科学
·
光伏技术
·
薄膜太阳能电池
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 14
·4634-4644
·
IF 6.4
Yue Jian,Tianliang Xie,Litao Han,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Yafang Qi,Sixin Wu
As a promising absorber material for thin film solar cells, the highest reported power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) is still far from the detailed balance limit of efficiency due to the large VOC deficit. Back contact engineering plays an important role in promoting the CZTSSe solar cell towards realizing high PCE. In this study, a MoO3-modified layer with the highest oxidation state 6+ and better thermal stability was in situ introduced by spin-coating Na2S aqueous solution on the Mo electrode. The results demonstrate that the Na2S layer at the rear contact provides more Na to diffuse into the absorber, thus improving the crystallinity of the film and the quality of the p–n heterojunction, and the carrier collection in the neutral region and at the front interface of the devices is enhanced. The formation of the MoO3 layer can also inhibit the decomposition reaction between Mo and CZTSSe, which minimizes the secondary phases and voids, and improves the quality of the back interface. Moreover, the band alignment and interfacial barrier at the back contact were modified by the MoO3 layer, resulting in better carrier collection and the reduction of photogenerated carrier recombination. By optimizing the Na2S (MoO3) layer, the average PCE of the CZTSSe solar cell increased to 12.48% from 10.22% with the large VOC increments of 60 mV and FF increments of 5%, and the best performance was achieved, with an active area efficiency of 12.74% without the anti-reflection coating layer.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Lijun Wang,Deyang Qin,Rui Wang,Shehroz Razzaq,Chunhu Zhao,Pochuan Yang,Xiaobo Hu,Jinchun Jiang,Shaoqiang Chen,Pingxiong Yang,Junhao Chu,Jiahua Tao
Quasi-one-dimensional antimony selenide (Sb 2 Se 3 ) stands out as a promising light-absorbing material known for its non-toxic nature, excellent stability, earth's abundance, and outstanding optoelectronic performance. However, the surface quality of Sb 2 Se 3 thin films is an important factor limiting the efficiency of Sb 2 Se 3 solar cells. This article presents a novel approach employing the environmentally friendly and cost-effective inorganic salt, antimony trichloride (SbCl 3 ), to passivate the surface of Sb 2 Se 3 thin films , thus improving the performance of Sb 2 Se 3 solar cells. The influence of SbCl 3 passivation on the surface quality of Sb 2 Se 3 thin films and the underlying physical mechanisms behind the enhancement of Sb 2 Se 3 solar cell performance have been investigated. SbCl 3 passivation can effectively fill the voids between Sb 2 Se 3 grains , reduce the surface roughness , and decrease the leakage current of the solar cells. Furthermore, it enhances the light response of the device in the long-wavelength region, reduces the open-circuit voltage losses, effectively lowers the interface recombination rate of charge carriers, and improves carrier transport. As a result of this innovative approach, the efficiency of 6.74% has been recorded. This work provides valuable references for future back contact interface passivation of Sb 2 Se 3 solar cells.
研究领域:
材料科学
·
物理化学
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 34
·期 8
·2310124
·
IF 19
Xinyu Li,Chengfeng Ma,Naiyun Liu,Chunxu Xiang,Shuxia Wei,Weibo Yan,Wei Huang,Hao Xin
Solution-processed chalcopyrite thin film solar cells have made great progress but still lag behind the vacuum-based ones due to inferior absorber quality and non-ideal interfaces. Here, plasma treatment of the molybdenum (Mo) substrate is reported to modify the back interface and improve the efficiency of solution-processed copper indium sulfoselenide (CuIn(S,Se) 2 , CISSe) solar cells. The results show plasma treatment oxides the surface Mo/MoO 2 to high oxidation oxides MoO 3-x (0 ≤ x < 1). The higher surface polarity greatly improves the wettability of the substrate to the precursor solution and results in formation of more compact and uniform precursor film, which grows to void-free larger grains absorber film with better adhesion to the substrate. In addition, the much higher chemical stability of MoO 3-x than Mo significantly reduces the thickness of high resistive MoSe 2 layer. The improved absorber quality and back interface property decreases charge carrier recombination in the absorber and back contact interface, resulting in 14.53% efficiency solution-processed CISSe solar cell, which is improved by 13% compared to device without plasma treatment.
研究领域:
材料科学
·
可再生能源
·
物理化学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2023
·
IF 6.9
Haoyu Xu,Yuzhou Sun,Zhou Shen,Qing Zhou,Qingyun Zhu,Haifeng Gao,Chao Gao,Xiaoyun Teng,Yu Wei
In this paper, we prepared Na–K co-doped Cu 2 ZnSn(S,Se) 4 (CZTSSe) films by solution method. By optimizing the distribution of the K-doping (uniform or localized K-doping) in the precursor films, the efficiencies of CZTSSe solar cells were improved. The effect of the K-doping distribution on the properties of CZTSSe films and solar cells were investigated. Compared to the solar cells without K-doping, the uniform K-doping in the precursor film increased the solar cell efficiency from 10.4% to 11.7%. In comparison, the localized K-doping in the bottom and in the top of the precursor films yielded solar cells with efficiencies of 12.4% and 10.1%, respectively. It was determined that the K-doping distribution primarily had an influence on carrier recombination in the depletion regions of CZTSSe solar cells. Whereas k-doping at the top of the precursor film greatly enhances the carrier recombination in the depletion region, the bottom doping has the opposite effect. The reason could be that the variation of the K-doping distribution modified the crystallization of the CZTSSe films. As the result, the defect properties of the CZTSSe films were altered. Moreover, the effect of the bottom K-doping on the back contact properties of CZTSSe solar cells was investigated by impedance spectroscopy . Though the K-doping can reduce the back contact barrier of the solar cell, the back contact barrier still achieved the height of 228 meV. The results indicated that the back contact barrier would be an important limiting factor for the efficiency of CZTSSe solar cell.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2017
·
IF 4.784
Shoushuai Gao,Yi Zhang,Jianping Ao,Shuping Lin,Zhaojing Zhang,Xiuling Li,Dongxiao Wang,Zhiqiang Zhou,Guozhong Sun,Fangfang Liu,Yun Sun
The direction of Se-Mo-Se sheets to the Mo film is crucial for the thickness of Mo(S,Se) 2 and the electrical conductivity , so as the back contact of Cu 2 ZnSn(S,Se) 4 solar cells. In this study, the preferred orientation of Mo(S,Se) 2 film changes from (100) peak to (103) peak, i.e. from perpendicular to the substrate to tilted to the substrate for Se-Mo-Se sheets as the roughness decrease of Mo back contact layer. The Se vapor can easily diffuse through the channels between Se-Mo-Se sheets when the formed Mo(S,Se) 2 layer is (100) peak preferred with Se-Mo-Se sheets perpendicular to the substrate, and thus excessively thick Mo(S,Se) 2 will be formed. Whereas, the Se-Mo-Se sheets are tilted to substrate when the preferred orientation of Mo(S,Se) 2 is (103) peak. The tilted Se-Mo-Se sheets can act as a natural Se diffusion barrier to suppress the Se vapor diffusion through the already formed Mo(S,Se) 2 layer to further selenize the remaining Mo film, and also can provide a good electrical conductivity. As a result, the thickness of Mo(S,Se) 2 sharply decreased from 1500 nm to 200 nm with the surface morphology change of Mo back contact, which resulting in the decrease of series resistance of Cu 2 ZnSn(S,Se) 4 solar cells from 2.94 Ω cm 2 to 0.49 Ω cm 2 , and the increase of conversion efficiency of Cu 2 ZnSn(S,Se) 4 solar cells from 6.98% to 9.04%.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
European Physical Journal Plus
·
2022
·Vol. 137
·期 11
·1-10
·
IF 3.758
Zhang Zhen,Fu Lijuan,Yao Shun,Cheng Jiang,Li Lu,Tang Hua
Back surface recombination could have some adverse effects on superstrate antimony selenide (Sb 2 Se 3 ) solar cells. Anode interface modification, such as inserting a buffer layer with appropriate energy-level matching, is necessary. Here, a novel interfacial material, pyrolytic ammonium metatungstate (PAMT), prepared by spray pyrolysis deposition, was introduced to modify the back contract of antimony selenide solar cells. Morpho-structural and thermal analysis showed that this material is different from crystalline molybdenum oxide powder. Monology characterization showed that PAMT preferentially fills the space of the Sb 2 Se 3 grain boundary. The J–V test showed that this layer improved the interfacial contract between the absorber and the back electrode. The PAMT layer showed suitable energy matching with Sb 2 Se 3 , providing an effective channel for hole carriers transport from the absorber to the anode, and largely reducing back contact surface recombination. As a result, the PAMT-modified Sb 2 Se 3 device exhibited a much higher photovoltaic performance, significantly improving the efficiency from 5.27% to 6.11%. Graphical Abstract
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
·
2025
·Vol. 40
·期 3
·035006
·
IF 2.1
Xingyu Zhang,Lingling Wang,Yawei Wang,Xiangyang Zhao,Rong Fang,Rui Guo,Yue Zhou,Xintong Zhang,Yichun Liu
Modifying the back contact interface plays a key role in improving the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Aiming at the phase decomposition and carrier recombination issues in the CZTSSe/Mo back contact interface, an ultra-thin Mg(OH)2 intermediate layer was introduced between the Mo substrate and the CZTSSe absorber layer. The Mg(OH)2 intermediate layer effectively suppressed the interface phase decomposition reactions and inhibited the generation of interface secondary phases. Meanwhile, during the high-temperature selenization process, the Mg2+ doped into CZTSSe at the back contact interface, reducing the defects and band offset at the CZTSSe/Mo interface. The performance of the device was improved, with a significant increase in efficiency compared to the control device. This work highlights the modification effect of Mg(OH)2 for improving back contact and also provides an easy-handling method to achieve high-performance CZTSSe solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS RESEARCH BULLETIN
·
2018
·
IF 2.873
Wenjie Lin,Weiliang Wu,Jie Bao,Zongtao Liu,Kaifu Qiu,Lun Cai,Zhirong Yao,Youjun Deng,Zongcun Liang,Hui Shen
The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrO x , x < 3) with a low melting point for high stability and high performance. In this contribution, CrO x is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrO x and 2 nm LiF x into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrO x (5 nm)/Au (4 nm)/ CrO x (5 nm) as the emitter. The formation of Cr(OH) 3 in ambient condition, resulted in a lower work function (4.8 eV) of the CrO x film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrO x covered with 500 nm Ag, when stored in ambient air longer than 170 days.
研究领域:
材料科学
·
光伏技术
·
半导体器件
·
表面工程
·
能源材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2017
·
IF 3.133
Lei Meng,Bin Yao,Yongfeng Li,Zhanhui Ding,Zhenyu Xiao,Kaisi Liu,Gang Wang
The back contact adhesion is the important factor of the microstructural performance which can determine the optoelectronic properties of the kesterite-based solar cells. Here, we present a rational and effective strategy to significantly enhance the back contact adhesion of Cu 2 (Zn,Cd)Sn(S,Se) 4 (CZCTSSe) absorber layers by insetting the appropriate thickness carbon-doping CZCTS thin films . We chose the oleylamine as the carbon-doping reagent which can generate a small amount of carbon in the annealing process . The suitable thickness carbon-doping CZCTS films can significantly change the crystal growth mechanism of CZCTSSe absorber layers, and eliminate the holes in the back contact. The efficiency of CZCTSSe solar cells fabricated by insetting the appropriate thickness carbon-doping CZCTS films is above 7%, and shows the excellent repeatability and long-term air stability compared with the control devices.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
表面与界面工程
·
无机功能材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）