Advanced Science
·
2023
·Vol. 10
·期 30
·2303414
·
IF 15.1
Hu Li,Guo-Qin Yang,Xiao-Yang Hu,Yi-Hua Hu,Rui-Bo Zeng,Jin-Rui Cai,Li-Quan Yao,Li-Mei Lin,Li-Ping Cai,Guilin Chen
Sb 2 S 3 is rapidly developed as light absorber material for solar cells due to its excellent photoelectric properties. However, the use of the organic hole transport layer of Spiro-OMeTAD and gold (Au) in Sb 2 S 3 solar cells imposes serious problems in stability and cost. In this work, low-cost molybdenum (Mo) prepared by magnetron sputtering is demonstrated to serve as a back electrode in superstrate structured Sb 2 S 3 solar cells for the first time. And a multifunctional layer of Se is inserted between Sb 2 S 3 /Mo interface by evaporation, which plays vital roles as: i) soft loading of high-energy Mo particles with the help of cottonlike-Se layer; ii) formation of surficial Sb 2 Se 3 on Sb 2 S 3 layer, and then reducing hole transportation barrier. To further alleviate the roll-over effect, a pre-selenide Mo target and consequentially form a MoSe 2 is skillfully sputtered, which is expected to manipulate the band alignment and render an enhanced holes extraction. Impressively, the device with an optimized Mo electrode achieves an efficiency of 5.1%, which is one of the highest values among non-noble metal electrode based Sb 2 S 3 solar cells. This work sheds light on the potential development of low-cost metal electrodes for superstrate Sb 2 S 3 devices by carefully designing the back contact interface.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Hu Li,Yingying Peng,Weixiang Zhou,Jun Guo,Chao Gao,Yapeng He,Mingxi Pan,Congqing Yang,Hui Huang
In the development of back electrodes for perovskite solar cells (PSCs), the major challenges are stability and cost. To address this, we present an innovative approach: Simultaneous evaporation of two independently controlled sources of metal materials was performed to achieve a uniform distribution of the alloy electrodes. In this study, Ag–Cu alloys (the molar ratio of Ag/Cu is 7/3) with a high-index crystal face (111) and a work function matching perovskite were prepared using a codeposition technique. These properties mitigate nonradiative carrier recombination at the interface and reduce the energy barrier for carrier migration. Consequently, compared to Ag based PSCs (22.77%), the implementation of Ag–Cu alloy (Ag/Cu is 7/3)-based PSCs resulted in a power conversion efficiency of 23.72%. In a 1500 h tracking test in ambient air, the Ag–Cu alloy (Ag/Cu is 7/3)-based PSCs maintained their initial efficiency of 86%. This can be attributed to almost no migration of elements from the Ag–Cu alloy electrode to the perovskite layer. Our work presents a vital strategy for improving the stability of PSCs and reducing the costs associated with the back electrode in PSCs.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2024
·
IF 13
Guonan Cui,Yanchun Yang,Lulu Bai,Rui Wang,Zhihui Gong,Yongjun Cao,Shuyu Li,Xiaogong Lv,Chengjun Zhu
A suitable interlayer between the Mo back electrode and kesterite absorber layer has been proven to have a positive effect on limiting the bulk defects of the absorber by the constitute diffusion. Here, a thin Bi 2 S 3 layer is used as the back-interface intermediate layer for the first time, this innovative approach allows for simultaneous modification of the back contact and reduction of bulk defects, resulting in improving the power conversion efficiency of the kesterite device from 9.66% to 11.8%. The evaporated Bi 2 O 3 thin films turn into the Bi 2 S 3 interlayers after sintering the Cu 2 ZnSnS 4 precursor thin films. The Bi 2 S 3 interlayer can inhibit the decomposition reaction of back contact and suppress the formation of the secondary phases. It can also optimize the Fermi level offset and promote the separation of the photoinduced carriers, resulting from its characteristic of high work function. Besides, a small part of the Bi element can diffuse into Cu 2 ZnSn(S, Se) 4 film and induce the crystal growth and restrain Zn-related defects, which is attributed to forming the low melting-point liquid BiSe x phase during the high-temperature selenization process. The conclusions highlight the bifunction of the thin Bi 2 S 3 intermediate layer, which can provide a new approach to improve the photoelectric conversion efficiency of kesterite solar cells.
研究领域:
材料科学
·
能源科学
·
光伏技术
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 32
·期 10
·2110335
·
IF 18.808
Hu Li,Limei Lin,Liquan Yao,Fengying Wu,Dong Wei,Guoliang Liu,Zhigao Huang,Shuiyuan Chen,Jianmin Li,Guilin Chen
MXene, a class of 2D materials of metal carbide or nitride, has attracted a lot of attention recently due to its excellent optical and electrical properties. In this work, titanium-carbide MXene (Ti 3 C 2 T x ) is introduced as a back electrode in Sb 2 (S,Se) 3 thin-film solar cells (FTO/CdS/Sb 2 (S,Se) 3 /MXene) for the first time, which displaces traditional carbon (C) and gold (Au) electrodes entirely. Impressively, thanks to its high conductivity, mild reflectivity, and flexible flake architecture, the MXene-based device performance outperforms typical C and Au electrodes by 153% and 77%, respectively. Specifically, the tunable work function of MXene and a beneficial Sb–O bond formed between Sb 2 (S,Se) 3 and MXene efficiently suppress the recombination and enhance charge transport by enjoying the unique merit of the rich terminal groups of MXene. As a result, the best efficiency of 8.29% of MXene-based Sb 2 (S,Se) 3 solar device is achieved, which represents the highest performance of noble metal and/or hole transport layer-free derived Sb 2 (S,Se) 3 solar cells to date. This result has revealed that MXene is a feasible material to substitute the back electrode in Sb-based solar cells to reach high efficiency, low cost, and high stability.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 38
·23415-23421
·
IF 3.108
Sheng Yuan,Ming-Jian Zhang,Xiaoyang Yang,Zongwei Mei,Yongji Chen,Feng Pan
MoS2, a representative two-dimensional transition metal dichalcogenide, gains significant interest due to its unique layered structure and electronic structure. In this work, a novel MoS2-based hybrid thin film was constructed by disordered stacking of MoS2–NMP hybrid particles, which were mainly composed of MoS2(NMP)3 molecules stacking in a nearly-parallel manner through S⋯H–C hydrogen bonds. Interestingly, it presents a higher work function (5.42 eV) than Au (5.32 eV), and a unique thickness-dependent conductivity with p-type semiconductor characteristic. Using it as the back contact of CdTe solar cells, the efficiency was improved by 2.6% compared to the traditional cells, mainly from the great improvement in short-circuit current density (Jsc). This significant improvement in solar performance was ascribed to the matchable energy levels at the CdTe/MoS2-based thin film interface and its unique thickness-dependent conductivity. This work opens a new direction for the extensive applications of TMD-based materials.
研究领域:
材料科学
·
光伏技术
·
纳米材料
·
半导体物理
·
表面科学
·
能源材料
✓ 已验证
DOI
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 13
·2300185
·
IF 7.9
Boyang Han,Yanping Song,Huanhuan Sun,Junjie Ma,Rensheng Wang,Xinlong Fan,Dan Chi,Xiuqing Meng,Shihua Huang,Bin Yao
As compared to the predecessor Cu(In,Ga)Se 2 device, the current efficiency of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells is still much lower mainly due to the known carriers recombination issue within interface and absorber bulk. In contrast to the majority of researches concerning recombination issues that focus on either single absorber bulk or interface passivation strategy, this study is pioneering in constructing synergistic passivation effects (SPE) to address the bulk and interface recombination issue simultaneously. By introducing a novel niobium pentoxide passivation layer into the back electrode interface (BEI), it is identified that SPE can be constructed due to Nb (& O) diffusion from Nb 2 O 5 layer to absorber bulk and BEI during high-temperature selenization. The chemical passivation effect is fulfilled via the intrinsic high resistance characteristic of Nb 2 O 5 layer, and also through the NbO x passivation aiming to absorber bulk benefited from Nb (& O) diffusion. Meanwhile, the occupations of Nb (& O) on the Mo (& Se) sites induce a conduction type inversion in MoSe 2 interfacial layer and create a preferable interface p + -Mo(Se,O) 2 :Nb/CZTSSe, achieving an interfacial field passivation effect. Ultimately, the promoted absorber quality and improved charge carrier transportation from SPE contribute to the boost of device performance beyond 10% efficiency.
研究领域:
材料科学
·
可再生能源
·
太阳能电池技术
·
半导体物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）