ADVANCED MATERIALS
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2022
·Vol. 34
·期 27
·2202858
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IF 32.086
Jinlin Wang,Jiazheng Zhou,Xiao Xu,Fanqi Meng,Chunxu Xiang,Licheng Lou,Kang Yin,Biwen Duan,Huijue Wu,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng
Aiming at a large open-circuit voltage ( V OC ) deficit in Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, a new and effective strategy to simultaneously regulate the back interface and restrain bulk defects of CZTSSe absorbers is developed by directly introducing a thin GeO 2 layer on Mo substrates. Power conversion efficiency (power-to-efficiency) as high as 13.14% with a V OC of 547 mV is achieved for the champion device, which presents a certified efficiency of 12.8% (aperture area: 0.25667 cm 2 ). Further investigation reveals that Ge bidirectional diffusion simultaneously occurs toward the CZTSSe absorber and MoSe 2 layer at the back interface while being selenized. That is, some Ge element from the GeO 2 diffuses into the CZTSSe absorber layer to afford Ge-doped absorbers, which can significantly reduce the defect density and band tailing, and facilitate quasi-Fermi level split by relatively higher hole concentration. Meanwhile, a small amount of Ge element also participates in the formation of MoSe 2 at the back interface, thus enhancing the work function of MoSe 2 and effectively separating photoinduced carriers. This work highlights the synergistic effect of Ge element toward the bulk absorber and the back interface and also provides an easy-handling way to achieve high-performance CZTSSe solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nano Energy
·
2020
·
IF 16.602
Qing Yu,Jiangjian Shi,Linbao Guo,Biwen Duan,Yanhong Luo,Huijue Wu,Dongmei Li,Qingbo Meng
For Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, eliminating multi-layer crystallization is a key issue of achieving high quality CZTSSe absorber layers and high cell performance. In this work, the formation mechanism of the multi-layer crystallization is revealed, that is, the reaction between CZTS and Mo may give the secondary phase, which subsequently acts as crystal nucleus to facilitate the CZTSSe crystal growth at back interface (Mo/CZTSSe), leading to multi-layer crystallization. By introducing MoO 3 isolating layer, this undesired reaction can be well prevented, and high quality single-layer crystals are obtained. This absorber film with fewer defects and secondary phases exhibits better semiconductor properties . Based on this regulated CZTSSe absorber layer, 11.68% (active area: 0.16092 cm 2 ) and 10.69% (mask area: 0.17586 cm 2 ) certified power-conversion-efficiency have been achieved with significant increase in the open-circuit voltage and fill factor.
研究领域:
材料科学
·
光伏技术
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半导体物理
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太阳能
✓ 已验证
产品关联
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2022
·
IF 5.518
Xuan Zhao,Chang Xu,Xi Wang,Jianing Guo,Mingxing Wu
Carbon materials are potential counter electrodes for all−inorganic hole transport layer (HTL)−free perovskite solar cells (PSCs), whereas the defects of the perovskite/carbon back interface are the dominant reason for the low power conversion efficiency (PCE) of this kind of device. To resolve this problem, carbon nanofiber (CNF) was first synthesized using electrospinning technique to construct a carbon counter electrode with porous network architecture by self−supporting nature of CNF. The CsPbBr 3 based all−inorganic HTL−free PSCs using the porous CNF counter electrode shows a PCE of 5.01%. To further modify the CsPbBr 3 /carbon back interface and energy level alignment, mesoporous CNF (m−CNF) and B doped m−CNF (m−BCNF) are synthesized, which can improve the conductivity of the carbon counter electrodes as well as decline the trap state densities and accelerate the carrier extraction and transport properties of the back interface. Accordingly, the all inorganic HTL−free PSCs using m−CNF and m−BCNF counter electrodes generate high PCE of 7.48% and 8.38%, with outstanding long−tern stability. The enhanced PCE improvements can be ascribe to strategies of construction of multilevel network and B doping which can modify the CsPbBr 3 /carbon back interface, optimize the energy level alignment of the device, and enhance the conductivity of the carbon counter electrode. This research is expected to provide meaningful support for development of new counter electrode materials and back interface engineering for high-performance all inorganic HTL−free PSCs.
研究领域:
材料科学
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能源科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2023
·
IF 13.1
Quanzhen Sun,Yifan Li,Caixia Zhang,Shunli Du,Weihao Xie,Jionghua Wu,Qiao Zheng,Hui Deng,Shuying Cheng
Focusing on the low open circuit voltage ( V OC ) and fill factor (FF) in flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se) 2 ) and V Sn defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (Cu Sn defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the V OC deficit ( V OC,def ) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.
研究领域:
材料科学
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太阳能
·
半导体物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 12
·2212627
·
IF 19
Hui Deng,Yingshun Cheng,Zekun Chen,Xiao Lin,Jionghua Wu,Qiao Zheng,Caixia Zhang,Shuying Cheng
Antimony sulfide (Sb 2 S 3 ) with a 1D molecular structure has strong bending characteristics, showing great application potential in flexible devices. Herein, the flexible substrate-structured Sb 2 S 3 solar cells is developed and improve device performances by the back interface selenization. The high-quality Sb 2 S 3 film with an optimal thickness of 1.8 µm, ensuring efficient spectra utilization, is deposited on flexible Mo foils by the rapid thermal evaporation technique. To solve the issues of back interfacial recombination and charge transport, the 20 nm MoSe 2 layer between Sb 2 S 3 film and Mo foil is fabricated by substrate selenization in the tube furnace. Further investigations indicate that the MoSe 2 layer improves the interfacial energy band alignments and induces the [hk1] orientation of Sb 2 S 3 film, thereby passivating defects and enhancing the carrier transport capacity. The flexible solar cell in the structure of Mo foil/MoSe 2 /Sb 2 S 3 /CdS/ITO/Ag, exhibiting good flexibility to stand thousands of bending, achieves an efficiency of 3.75%, which is the highest for Sb 2 S 3 devices in substrate configuration. The presented flexible structure and back interfacial selenization study will provide new prospects for inorganic Sb 2 S 3 thin film solar cells.
研究领域:
光伏技术
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材料科学
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薄膜技术
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柔性电子学
✓ 已验证
DOI
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Liquan Yao,Ming-Hao Lai,Limei Lin,Dong Wei,Zhigao Huang,Shuiyuan Chen,Guilin Chen
Severe back interface recombination still impedes the enhancement of device performance in Sb2S3 solar cells, primarily due to a plethora of defects derived from suspended bonds at the rear surface of Sb2S3. In contrast to the conventional physical absorption method (i.e., Sb2S3/Spiro-OMeTAD), herein, we develop a novel strategy involving cation exchange-assisted hot injection for the in situ anchoring of PbSe nanocrystalline structures to the surface of Sb2S3. This process successfully establishes a deeply buried back interface, thereby creating a robust chemically bonding bridge for facilitating smooth carrier transfer. Additionally, the energy level arrangement has been tailored by the quantum size effect of PbSe particles to mitigate band offsets at the back interface. Consequently, the decent PbSe substantially reduces the density of surface defects from 2.44 × 1016 to 9.8 × 1015 cm–3, leading to an effective suppression of nonradiative recombination as supported by the reduction in the surface photovoltage. Ultimately, the power conversion efficiency of Sb2S3 solar cells based on the ITO/TiO2/CdS/Sb2S3/PbSe/C/Ag architecture is elevated from 6.78 to 7.34%, representing the highest efficiency achieved for full-inorganic Sb2S3 solar cells to date. This construction tactic of the deeply buried back interface sheds light on the pursuit of highly efficient Sb2S3 solar cells.
研究领域:
材料科学
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纳米技术
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光伏技术
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化学
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY
·
2024
·
IF 6
Letu Siqin,Chenjun Yang,Jingyuan Guo,Yutian Wang,Lei Wang,Yuan Li,Yiming Wang,Shuyu Li,Xiangyu Chen,Hongmei Luan,Ruijian Liu,Chengjun Zhu
The high open-circuit voltage deficit (V OC, def ) caused by structural imperfections in the absorber layer and charge loss during carrier transport is a critical barrier affecting the performance of Cu 2 ZnSn(S,Se) 4 (CZTSSe) devices. In this work, Ag was added to the DMF-based Cu + -Sn 4+ system, which significantly improved the crystal morphology and electrical properties of the absorber layer. Additionally, optimizing the selenization process not only reduced surface roughness and eliminated voids at the bottom of the absorber layer but also resulted in the formation of a MoSe 2 back interface layer with a more suitable thickness. These measures collectively enhanced the overall quality of the absorber layer, reducing the formation of deep-level defect clusters and effectively boosting carrier transport efficiency. Consequently, the concentration of bulk and interfacial defects decreased, and the impact of potential barriers on carrier movement was minimized. With these comprehensive improvements, the power conversion efficiency of CZTSSe solar cells increased from 8.48 % to 11.23 %. Our research demonstrates that optimizing the structure of the absorber layer can effectively enhance the performance of CZTSSe solar cells, providing valuable insights for the fabrication of high-efficiency devices in the future.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）