Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 16
·5498-5504
·
IF 6.4
Haoyu Xu,Xuanyang Guo,Hui Yang,Qing Zhou,Shiyan Liu,Haifeng Gao,Chao Gao,Wei Yu
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) films were prepared by a non-vacuum solution method. The efficiency of an as-fabricated CZTSSe solar cell was improved from 8.0% to 10.9% by adding NaTFSI (sodium bis(trifluoromethanesulfonyl)imide) in the precursor solution. It was found that the NaTFSI additive could facilitate the formation and grain-growth of CZTSSe during the selenization of the film. As a result, the size of the crystalline grains in the CZTSSe films increased. Besides, a shallow level acceptor rather than a deep level acceptor could be generated in the CZTSSe films by using the NaTFSI additive. The use of NaTFSI could also decrease the relative content of the low valence Sn2+, which was believed to be related with deep level defects in CZTSSe. In addition, the effect of the NaTFSI concentration on the properties of CZTSSe solar cells were investigated. We found that excess NaTFSI in the precursor solution would not influence the recombination of the carriers in the neutral region of the solar cell, but could enhance the recombination of the carriers in the depletion region of the solar cell. Therefore, the performances of CZTSSe solar cells were reduced when excess NaTFSI was added in the precursor solution.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
Nature Energy
·
2025
·Vol. 10
·期 5
·630-640
·
IF 60.1
Wu Tong,Chen Shuo,Su Zhenghua,Wang Zi,Luo Ping,Zheng Zhuanghao,Luo Jingting,Ma Hongli,Zhang Xianghua,Liang Guangxing
Sulfide kesterite Cu 2 ZnSnS 4 (CZTS) is a competitive photovoltaic material, especially for multijunction solar cells. However, the device power conversion efficiency has remained stagnant for years. Deep-level defects, such as sulfur vacancies (V S ), cause serious non-radiative recombination of charge carriers. Here we propose a passivation strategy for V S through the heat treatment of the CdS/CZTS heterojunction in an oxygen-rich environment. In this process, V S are occupied by oxygen atoms, suppressing V S defects. In addition, the diffusion of Cd ions to the CZTS absorber layer, and the formation of positive Na–O and Sn–O complexes can passivate related defects. These effects led to a reduced charge recombination and favourable band alignment. We demonstrate a certified efficiency of 11.51% for air-solution-processed CZTS solar cells (bandgap of 1.5 eV) without any extrinsic cation alloying. The study offers insights into defect passivation and performance improvement mechanism of kesterite solar cells.
研究领域:
材料科学
·
太阳能电池研究
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产品关联
DOI
高影响因子
Science China-Materials
·
2023
·Vol. 66
·期 9
·3415-3423
·
IF 8.1
Gao Jinxiang,Che Bo,Cai Huiling,Xiao Peng,Zhang Lijian,Cai Zhiyuan,Zhu Changfei,Tang Rongfeng,Chen Tao
Antimony selenosulfide (Sb 2 (S,Se) 3 ) is a promising photovoltaic material because of its high chemical stability, optimal optoelectronic properties, and low-cost advantages. However, finding suitable material processing approaches to obtain elemental controlled Sb 2 (S,Se) 3 films with suppressed deep-level defects poses fundamental demands and challenges to developing this emerging solar technology. Here, we developed a robust method for tailoring the composition of the film through controlling the anion elements. The films were prepared by evaporating the presintered Sb 2 (S,Se) 3 alloy compound via a single-source thermal evaporation process. A quasi-precise estimate of single-phase Sb 2 (S,Se) 3 films was made by sintering Sb, S, and Se elemental precursors and adjusting the anion molar ratio in the prefabricated Sb 2 (S,Se) 3 alloy compound, and the elemental ratio of the precursor alloy compound was maintained in the as-obtained Sb 2 (S,Se) 3 films. A highly efficient Sb 2 (S,Se) 3 solar cell with a power conversion efficiency of 8.25% was achieved by introducing low-cost CuPc-doped P3HT as a hole-transporting layer. Here, we demonstrate the dependence of deep-level defects and oriented crystal growth on the S/Se atomic ratios and show how tunability can be used to improve carrier transport for photovoltaic energy conversion. Our study presents a novel approach to fabricating metal chalcogenide semiconducting films and improving the performance of Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2023
·
IF 3.7
Jia Li,Yimin Tang,Xiuwen Wang,Wei Kan,Libin Yang,Xin Jiang,Yukihiro Ozaki,Xiaoxia Han,Bing Zhao
Surface oxygen vacancy defects and energy band defects can be synchronously regulated to accelerate the charge transfer in a semiconductor–molecule system for boosting the surface-enhanced Raman scattering (SERS) performance of a semiconductor. Herein, alkaline earth metal Sr with a low electronegativity and a large atomic radius was selected as a dopant to prepare a Sr-doped TiO2 (SrnTiO2) SERS substrate, in which a simple Sr doping achieves a synchronous regulation of double defects (i.e., surface oxygen vacancy defect and energy level defect of Ti) in TiO2. Abundant surface oxygen vacancies and defect energy levels of Ti are jointly responsible for the greatly enhanced SERS performance of the substrate. On the optimal substrate Sr0.0100TiO2, the minimum detection limit of a nonresonance molecule, 4-mercaptobenzoic acid, can reach 1 × 10–9 M, and the enhancement factor is as high as 9.3 × 106. To the best of our knowledge, this is the highest SERS activity among the reported semiconducting substrates, even comparable to those of precious metals. Moreover, the SrnTiO2 substrate shows an excellent spectral reproducibility and ultrahigh stability, which can withstand the corrosions of strong acid and alkali and even can resist the oxidation of high temperatures for SERS detection.
研究领域:
材料科学
·
化学
·
纳米技术
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产品关联
DOI
高影响因子
Energy & Environmental Science
·
2022
·Vol. 15
·期 11
·4813-4822
·
IF 39.714
Xingcheng Li,Xin Wu,Bo Li,Zeyan Cen,Yanbo Shang,Weitao Lian,Rui Cao,Lingbo Jia,Zhen Li,Danpeng Gao,Xiaofen Jiang,Tao Chen,Yalin Lu,Zonglong Zhu,Shangfeng Yang
Perovskite solar cells (PSCs) have drawn unprecedented attention due to their skyrocketing power conversion; however, their reported fill factors (FFs) still lag behind those of commercialized solar cells, and there is a lack of a comprehensive understanding of the mechanism. Here, we employed a facile and effective strategy to improve the FF to 96.3% of the Shockley–Queisser (S–Q) limit through homogeneous incorporation of CsPbBr3 crystals, which could significantly passivate deep-level hole defects, thereby leading to dramatically enhanced hole mobility to balance with electron mobility. As a result, the non-radiative recombination is suppressed along with enhanced carrier extraction efficiency, resulting in a remarkable PCE of 25.09% (certified: 24.66%) with a record FF of 86.9%, which is the highest FF among those of the reported PSCs. An in-depth analysis suggests that this strategy could concurrently reduce the FF loss caused by series resistance, shunt resistance, and non-radiative recombination. This work provides an efficient strategy to promote the FF to approach the theoretical limit.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
Nature Communications
·
2018
·Vol. 9
·期 1
·1-10
·
IF 12.353
Wen Xixing,Chen Chao,Lu Shuaicheng,Li Kanghua,Kondrotas Rokas,Zhao Yang,Chen Wenhao,Gao Liang,Wang Chong,Zhang Jun,Niu Guangda,Tang Jiang
Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
Small
·
2024
·Vol. 20
·期 35
·2401330
·
IF 13
Yingfen Li,Yue Jian,Fang Huang,Nian Zhou,Wanqiu Chai,Juguang Hu,Jun Zhao,Zhenghua Su,Shuo Chen,Guangxing Liang
Cu 2 ZnSn (S,Se) 4 (CZTSSe), a promising absorption material for thin-film solar cells, still falls short of reaching the balance limit efficiency due to the presence of various defects and high defect concentration in the thin film. During the high-temperature selenization process of CZTSSe, the diffusion of various elements and chemical reactions significantly influence defect formation. In this study, a NaOH-Se intermediate layer introduced at the back interface can optimize Cu 2 ZnSnS 4 (CZTS)precursor films and subsequently adjust the Se and alkali metal content to favor grain growth during selenization. Through this back interface engineering, issues such as non-uniform grain arrangement on the surface, voids in bulk regions, and poor contact at the back interface of absorber layers are effectively addressed. This method not only optimizes morphology but also suppresses deep-level defect formation, thereby promoting carrier transport at both interfaces and bulk regions of the absorber layer. Consequently, CZTSSe devices with a NaOH-Se intermediate layer improved fill factor, open-circuit voltage, and efficiency by 13.3%. This work initiates from precursor thin films via back interface engineering to fabricate high-quality absorber layers while advancing the understanding regarding the role played by intermediate layers at the back interface of kesterite solar cells.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Science China-Materials
·
2022
·Vol. 65
·期 12
·3368-3381
·
IF 8.64
Bai Le,Yao Fang,Wang Rui,Liu Baibai,He Dongmei,Zhou Qian,Wang Wenqi,Xu Cunyun,Hu Xiaobo,Chen Shaoqiang,Song Qunliang,Zhou Tingwei,Lee Donghwa,Zhao Pengjun,Chen Cong,Yang Hua,Lin Qianqian,Zang Zhigang,Chen Jiangzhao
The deep-level traps at grain boundaries (GBs) and halide ion migration are quite challenging for further enhancement of the stability and efficiency of perovskite solar cells (PSCs) as well as for the elimination of notorious hysteresis. Herein, we report a large-sized strongly coordinated organic anion GB anchoring strategy for suppressing ion migration and passivating defects in planar PSCs. The practical implementation of this strategy involves the incorporation of potassium salts containing a large-sized organic counter anion (4-sulfobenzoic acid monopotassium salt, SAMS) into the perovskite precursor. It has been found that anions within SAMS can be firmly anchored at GBs due to the strong coordination interaction between C=O and/or S=O at both ends of bulky anion and undercoordinated Pb 2+ and/or halide vacancies, along with the hydrogen bond between −OH and formamidinium. SAMS can not only passivate shallow-level defects but also cause more effective passivation of the deep-level defects. The GB manipulation strategy results in a reduced defect density, an increased carrier lifetime as well as suppressed ion migration, which in turn contributed to enhanced efficiency and stability of PSCs together with a thorough elimination of hysteresis. As a result, the SAMS-modified device with an outstanding fill factor of 0.84 delivers a significant improvement in efficiency (22.7%) in comparison with the control device (20.3%). The unencapsulated modified device demonstrates only little degradation after 1320 h at 60°C.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2021
·Vol. 12
·期 1
·1-7
·
IF 14.919
Lian Weitao,Jiang Chenhui,Yin Yiwei,Tang Rongfeng,Li Gang,Zhang Lijian,Che Bo,Chen Tao
Antimony trisulfide (Sb 2 S 3 ) is a kind of emerging light-harvesting material with excellent stability and abundant elemental storage. Due to the quasi-one-dimensional symmetry, theoretical investigations have pointed out that there exist complicated defect properties. However, there is no experimental verification on the defect property. Here, we conduct optical deep-level transient spectroscopy to investigate defect properties in Sb 2 S 3 and show that there are maximum three kinds of deep-level defects observed, depending on the composition of Sb 2 S 3 . We also find that the Sb-interstitial (Sb i ) defect does not show critical influence on the carrier lifetime, indicating the high tolerance of the one-dimensional crystal structure where the space of (Sb 4 S 6 ) n ribbons is able to accommodate impurities to certain extent. This study provides basic understanding on the defect properties of quasi-one-dimensional materials and a guidance for the efficiency improvement of Sb 2 S 3 solar cells.
研究领域:
材料科学
·
光伏技术
·
缺陷工程
✓ 已验证
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Tianliang Xie,Litao Han,Liangli Chu,Mingtao Han,Yue Jian,JinJin Chi,Xinyi Zhong,Tong Liu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Yafang Qi,Sixin Wu
Insufficient selenization and uneven distribution of elements caused by the poor diffusion and reaction activity of selenium clusters is one of the main issues limiting the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Here, this work designs a simple and feasible strategy to improve the activity of selenium (Se) by implementing high-temperature treatment on graphite boxes loaded with Se pellets. The rapid adsorption/desorption characteristics of graphite on active gaseous small-molecule selenium have successfully introduced hyperactive Se 4 , Se 3 , and Se 2 into the selenization process. The results indicate that the adsorbed non-toxic gaseous active Se 3 and Se 4 can quickly and uniformly diffuse into the precursor film at low temperatures, thereby inducing nucleation and grain growth at both surface and back interface simultaneously, which inhibits the upward migration and aggregation of cations, especially Cu, and promotes the homogenization of elements. The overall relatively Cu-poor chemical environment suppresses the formation of Cu Zn defects and [2Cu Zn +Sn Zn ] defect clusters, and also promotes the generation of favorable V Cu . The band tail states and non-radiative recombination are then optimized. Finally, the CZTSSe solar cells achieve a power conversion efficiency (PCE) of 14.5%, with V OC / V OC SQ of 67% being one of the highest in the literature.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 31
·期 24
·2101927
·
IF 18.808
Yuancai Gong,Ruichan Qiu,Chuanyou Niu,Junjie Fu,Erin Jedlicka,Rajiv Giridharagopal,Qiang Zhu,Yage Zhou,Weibo Yan,Shaotang Yu,Jingjing Jiang,Sixin Wu,David S. Ginger,Wei Huang,Hao Xin
The large open-circuit voltage deficit ( V oc,def ) is the key issue that limits kesterite (Cu 2 ZnSn(S,Se) 4 , [CZTSSe]) solar cell performance. Substitution of Cu + by larger ionic Ag + ((Ag,Cu) 2 ZnSn(S,Se) 4 , [ACZTSSe]) is one strategy to reduce Cu–Zn disorder and improve kesterite V oc . However, the so far reported ACZTSSe solar cell has not demonstrated lower V oc,def than the world record device, indicating that some intrinsic defect properties cannot be mitigated using current approaches. Here, incorporation of Ag into kesterite through a dimethyl sulfoxide (DMSO) solution that can facilitate direct phase transformation grain growth and produce a uniform and less defective kesterite absorber is reported. The same coordination chemistry of Ag + and Cu + in the DMSO solution results in the same reaction path of ACZTSSe to CZTSSe, resulting in significant suppression of Cu Zn defects, its defect cluster [2Cu Zn + Sn Zn ], and deep level defect Cu Sn . A champion device with an efficiency of 12.5% (active area efficiency 13.5% without antireflection coating) and a record low V oc,def (64.2% Shockley–Queisser limit) is achieved from ACZTSSe with 5% Ag content.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
无机化学
·
能源材料
·
固态化学
✓ 已验证
DOI
高影响因子
Small
·
2025
·
IF 12.1
Binyi Yang,Hui Li,Hongwei Mi,Guoqiang Zhang
Non-radiative recombination is a key factor restricting photocatalytic efficiency, which leads to the rapid annihilation of photogenerated carriers through deep-level defect centers. Shallow-level defects can suppress non-radiative recombination through a unique carrier capture-release mechanism. Herein, calcium poly(heptazine imide) (CaPHI) is used as a model photocatalyst to investigate the suppressing effect of shallow-level defects on non-radiative recombination. By regulating the concentration of shallow-level defects, the probability of carriers being captured by deep-level defects is reduced. As a result, the non-radiative recombination rate decreased from 0.6361 to 0.3737 ns −1 , representing a reduction of 41.3%. The optimal CaPHI exhibits an apparent quantum efficiency of 60.57% at 420 nm for hydrogen evolution, surpassing most previously reported poly(heptazine imide) materials. This study elucidates the role of shallow-level defects from the perspective of suppressing non-radiative recombination, providing a new insight for addressing this issue in semiconductor photocatalysts.
研究领域:
材料科学
·
光催化
·
半导体物理
·
能源化学
·
功能材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）