ADVANCED MATERIALS
·
2024
·
IF 27.4
Yingjie Zhao,Zhefeng Lou,Jiaming Hu,Zishun Li,Lanxin Xu,Zhe Chen,Zhuokai Xu,Tao Wang,Mengqi Wu,Haoting Ying,Minghao An,Wenbin Li,Xiao Lin,Xiaorui Zheng
Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi 2 O 2 Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se heterostructures. The resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 10 5 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi 2 SeO 5 thickness modulation and theoretical ab initio calculations.
研究领域:
材料科学
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神经形态计算
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信息存储技术
✓ 已验证
DOI
高影响因子
Materials Today Advances
·
2025
·
IF 8
Zijun Xu,Ruiming Liu,Bai Sun,Xiaosen Pan,Zelin Cao,Kaikai Gao,Yu Cui,Hongbin Zhao,Hao Sun,Qiang Lu,Yi Lyu,Fenggang Ren
Memristors have attracted widespread attention in the fields of brain-like chips and neuromorphic computing due to their parallel computing capabilities and characteristics to simulate neural synapses. However, the application of memristor in healthcare monitoring and diagnosis has not yet been well developed, which may delay the progress of smart healthcare services empowered by artificial intelligence (AI). Herein, it was demonstrated a pH-responsive memristor with an Ag/Poly(diethylene glycol ester thioctic acid)-Li/FTO structure, which shows excellent resistance switching behaviors with self-rectifying characteristics. Further, it was found the device can achieve precise acid-base discrimination through synergistic mechanisms involving the cationic conduction properties of the C-S bond in Poly(diethylene glycol ester thioctic acid) and the uniqueness of the metal-oxygen coordination bond. Accurate solution pH determination can be accomplished within 3 min via analysis of the time-dependent ΔI F-R parameter, defined as the different between forward peak and reverse currents. Finally, the device was successfully applied to determine sweat pH levels, demonstrating the potential of the pH-responsive memristor in monitoring health status through sweat. Therefore, this work provides new insights for non-invasive preliminary diagnosis and early warning of metabolic diseases such as diabetes, which effectively promotes the rapid development of smart wearable medical devices.
研究领域:
生物医学工程
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神经形态计算
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可穿戴传感器
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健康监测
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·Vol. 35
·期 36
·2424114
·
IF 19
Song He,Wenkang Zhong,Mufan Zhu,Shuaidi Wu,Wenju Xie,Zhiyong Ouyang,Baochang Cheng,Jie Zhao
Although memristor-based in-memory computing (IMC) prototypes demonstrate great progress and performance, integrating high flexibility and programmability into large-scale, high-density crossbar arrays remain a major hurdle for advanced computing systems. Herein, the execution of 12 distinct algorithms is successfully implemented in a single halide perovskite based IMC, leading to the construction of a halide perovskite memory with reconfigurable logic operation capabilities. Moreover, the device exhibits robust anti-crosstalk performance, paving the way for its potential application in crossbar integrated arrays. The work differs from common resistive switching, which needs electro-forming to shift from high-resistance state (HRS) to low-resistance state (LRS). Instead, it begins with LRS driven by ionic conduction, and the switching is controlled by reversible barriers due to ion migration and accumulation, enabling voltage magnitude and polarity to independently regulate various resistive behaviors. Additionally, mappings between environmental parameters and behavioral patterns are systematically established, providing an approach for adapting reconfigurable computing architectures to evolving conditions. This 1R-IMC device provides self-rectification and multiple reconfigurable functions, vital for flexible, programmable high-density crossbar arrays in advanced computing.
研究领域:
类脑计算
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非易失性存储器
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内存计算
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材料科学
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电子器件
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Fengxia Yang,Hao Sun,Xiang Zhang,Dandan Chen,Jianbiao Chen,Xuqiang Zhang,Jiangtao Chen,Yun Zhao,Yan Li
Self-rectifying optoelectronic synaptic memristor integrates the multi-field regulated dynamic plasticity of biological synapses while effectively addressing the long-standing challenge of parasitic current suppression in high-density device arrays. This work demonstrates an Ag/CZTSSe/Mo (CZTSSe: Cu 2 ZnSn(S, Se) 4 ) optoelectronic synaptic memristor enabling reversible switching between bipolar resistive switching and self-rectifying modes, thus functioning simultaneously as a selector and memristor. The non-volatile bipolar switching behavior features bias-modulated On/Off ratio (2.2 × 10 2 –5.1 × 10 3 ) and a near-infrared light-tunable reset voltage (0.52–0.06 V), while the self-rectifying characteristic maintains a rectification ratio of >10 3 over 100 switching cycles. Under either electrical or light (470–980 nm) stimuli, the memristor emulates key artificial synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation/depression, spike-timing-dependent plasticity, and short-to-long-term memory (S/LTM) transitions. Notably, its realized applications, including 1) reset-dominated unclonable security encryption, 2) visible-light vision imaging to near-infrared weak-signal detection, and 3) envelope demodulation of amplitude-modulated signals for long-distance high-accuracy data transmission, highlight its cross-disciplinary advantages in neuromorphic computing.
研究领域:
神经形态计算
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光电子学
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忆阻器技术
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电阻开关
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人工突触
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纳米电子学
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信息安全
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信号处理
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传感器与成像
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）