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Advanced Electronic Materials · 2021 ·Vol. 7 ·期 12 ·2000893 · IF 7.295

Tungsten Ditelluride: Synthesis, Structure, and Magnetoresistance Property

Mingxing Cao,Zhihong Wang,Liwen Ma,Liwen Zhang,Man Wang,Yangsi Liu,Jian He,Xiaoli Xi

Tungsten ditelluride (WTe 2 ) is arising as an attractive material in magnetoresistance (MR) properties filed. The magnetoresistance properties of WTe 2 makes it an ideal material for its magnetoresistive heads of computer and magnetic sensor device applications. So far, people have developed various controlled synthesis methods to produce large-quantity uniform flat WTe 2 crystals. Nevertheless, none of the methods are sustainable, some methods use reducing gases, and some use very long heat preservation, and the process is very complicated. Here, a mild and fast self-flux method is described for WTe 2 synthesis that can avoid producing reducing gases. After conducting structural and physical tests, it is found that annealing time is critical for WTe 2 structure formation. Long annealing time improves the crystallinity of WTe 2 and makes its texture more obvious, increasing the conductivity of WTe 2 . Therefore, it will lead to the anomalous nonsaturating positive magnetoresistance with different field dependent behaviors, reaching the ultrastrong magnetoresistive value of 1040% at 5 K and 14 T. The results provide a sustainable approach for uniform WTe 2 crystal synthesis, which will benefit the large-quantity production of WTe 2 magnetoresistive materials.

CAS / MDL: 107-15-3 13494-80-9
研究领域: 材料科学 · 物理学
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