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ACS Applied Polymer Materials · 2023 · IF 5

Preparation and Properties of Low Internal Stress Polyimide-b-Polysiloxane with a Hyperbranched Structure

Zhengxiang Zhou,Gebin Shen,Xinrong Huang,Chuanhui Yang,Yingfeng Yu

Polyimides (PIs) with excellent thermal stability, mechanical toughness, dielectric properties, and an inherently low coefficient of thermal expansion are widely applied in modern microelectronic fields expectedly. However, it is still a challenge to minimize the internal stress between the PI and substrates. Herein, a series of linear and hyperbranched polyimides and polyimide-b-polysiloxane copolymers were fabricated to tailor the modulus and the coefficient of thermal expansion. Their thermomechanical properties, dimensional stabilities, and thermal stabilities were characterized by dynamic mechanical analysis (DMA), thermomechanical analysis (TMA), and thermal gravimetric analysis (TGA), and the phase separation morphology of polyimide-b-polysiloxane was investigated by transmission electron microscopy (TEM) and atomic force microscopy (AFM). The results showed that the internal stress of hyperbranched polyimide decreased by 11.00% compared with linear polyimide, while with the copolymerization of polyimides and polysiloxanes, the internal stress decreased by 54.62%. The hyperbranched polyimide-b-polysiloxane with a lower modulus has a CTE value of 20.1 ppm/°C close to the CTE of copper, which has tremendous potential to be applied in chip-scale packaging.

研究领域: 材料科学 · 微电子学
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2024 · IF 5.8

Reactive cold sintering of dense barium sulfate ceramics for high-reliability chip packaging in integrated circuits

Jia Peng Yuan,Bing Liu,Cheng Chao Hu,Kai Xin Song,Yu Hui Huang

Reactive cold sintering (RCS) is an innovative ceramic consolidation technique that combines a low-temperature reaction with the cold sintering process . In this work, equimolar (CH 3 COO) 2 Ba and (NH 4 ) 2 SO 4 were homogeneously mixed to obtain a reactive activator abbreviated as RA and then added to barium sulfate (BaSO 4 ) powder obtaining BaSO 4 – x wt%RA ( x = 5, 7.5, 10, 12.5, and 15). Dense (>96 % theoretical) BaSO 4 ceramics were successfully fabricated via RCS of BaSO 4 – x wt%RA at 200℃ with a constantly applied pressure of 250 MPa. The Woolfrey-Bannister method provided quantitative insights into the activation energy , indicating that RA effectively reduced the energy required for densification . The Vickers hardness (1.76 GPa) and coefficient of thermal expansion (CTE, 18.8 ppm/°C) of the RCSed BaSO 4 ceramics were comparable to the high-temperature (850 °C) sintered counterparts. Moreover, finite element analyses confirmed the high CTE value of the RCSed BaSO 4 ceramics holds great promise for high-reliability chip packaging applications.

研究领域: 材料科学 · 电子工程
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Journal of Materiomics · 2025 · IF 9.6

Room-temperature densified Al2O3-H3BO3 ceramics with excellent microwave dielectric properties and thermal conductivity for chip packaging

Zhan Zeng,Jin Cheng,Xinwei Xu,Hongye Wang,Yani Lu,Liang Sun,Naichao Chen,Xiaoyu Li,Boshen Zhang,Hong Wang

As electronic devices become increasingly miniaturized and demand greater integration, traditional packaging technologies face substantial challenges in meeting the needs for high-frequency performance and system reliability. Ceramic materials, known for their excellent dielectric properties and thermal stability, are promising candidates for advanced packaging applications. However, conventional high-temperature densification processes, which often exceed 1000 °C, restrict their compatibility with temperature-sensitive components in modern electronic systems. To overcome this limitation, we propose a novel approach to densify Al 2 O 3 -H 3 BO 3 ceramic at room temperature under low uniaxial stress. It is found that a H 3 BO 3 facilitates plastic deformation in the medium of deionized water, enhancing the densification of Al 2 O 3 -H 3 BO 3 ceramics even at minimal uniaxial stress. The resulting material exhibits a high relative density of over 96% and possesses excellent microwave dielectric properties (relative permittivity : 2.84–5.37; values: 12,924–69,000 GHz; resonant frequency values: −156.94 10 –6 ·°C –1 to −73.42 10 –6 ·°C –1 ) and thermal conductivity ( values: 1.96–5.96 W·m –1 ·K –1 ). After co-firing with a silicon wafer, the ceramic maintains its structural integrity, with no observable atomic diffusion at the ceramic-silicon interface, rendering it a potential candidate for advanced packaging and integration technologies.

CAS / MDL: 10043-35-3
研究领域: 材料科学 · 电子工程
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Advanced Electronic Materials · 2025 · IF 5.3

Novel Porous Gold Microspheres Anisotropic Conductive Film (PGMS-ACF) with High Compression Ratio for Flip Chip Packaging

Li Zhang,Zhaomeng Wang,Geng Wei,Puyue Xia,Sining Fan,Wenhao Zhang,Shaolong Tang

The preparation of conductive filler is a key technology in anisotropic conductive films preparation. In recent decades, research on the preparation of novel conductive particles has reached a bottleneck. Porous gold materials exhibit high compressibility, low density, and excellent conductivity. It is believed that using porous gold microspheres (PGMS) to supersede polymer composite conductive microspheres has the potential to prepare anisotropic conductive film (ACF) with better performance. However, preparing ultrafine (1–10 µm) PGMS remains challenging. Herein, the study presents a novel method for preparing PGMS with controllable particle size and high sphericity. Results show that porous gold microspheres ACF (PGMS-ACF), containing only 5 wt.% particles (size range 4.5–10.5 µm), achieves good conductivity when held at a pressure range of 0.05–0.6 MPa. Its compression ratio is between 33% and 71% at 0.3 MPa. The 4-point probe measurement shows a contact resistance as low as 10 mΩ in 2 mm 2 . Moreover, PGMS-ACF also exhibits a good linear relationship within 3.3 A. Compared to commercial polymer composite conductive microspheres ACF, PGMS-ACF offers a significant advantage in achieving a large compression ratio, which in turn leads to improved conductivity and reduces the need for precise sorting. The research provides a new approach for the preparation of novel ACF.

研究领域: 材料科学 · 电子工程
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POLYMER · 2022 · IF 4.432

Organosoluble thermoplastic polyimide with improved thermal stability and UV absorption for temporary bonding and debonding in ultra-thin chip package

Jinshan Liu,Jinhui Li,Tao Wang,Dongxu Huang,Zhipeng Li,Ao Zhong,Wen Liu,Yuying Sui,Qiang Liu,Fangfang Niu,Guoping Zhang,Rong Sun

Thermoplastic polyimide (TPI) has been extensively applied in electronic industry due to improved processibility, superior mechanical and dielectric properties. However, TPI is still restricted by the limited thermal stability and insufficient UV absorption for the application of temporary bonding and debonding (TBDB) in ultra-thin chip package. In this work, the rigid biphenyl group, twisted non-coplanar structure, rigid bulky side group and flexible ether bond are introduced to obtain a series of novel quaternary copolymerized TPIs with superior comprehensive performance. The results show that the as-prepared TPI possesses excellent solubility in NMP , DMF, DMAc and DMSO , and thermoplasticity ( E ’ drop > 10 3  MPa). Besides, the temperature of 5% weight loss and glass transition temperature could achieve as high as 548.1 °C and 335.4 °C, respectively. Furthermore, the tensile strength of TPI-4 is 128.7 MPa and elongation at break is about 14.2%. Moreover, the TPI-4 also exhibits superior adhesion on silicon wafer (adhesion strength >5 B by hundred grid test) and wonderful absorption at 355 nm UV laser (99.7%). At last, the application in TBDB process has also been proved with a laser energy of 400 mJ/cm 2 within 60 s, showing superior efficiency and low-cost. All these results prove their application in TBDB of ultra-thin chip package for 5G era and so forth.

研究领域: 材料科学 · 电子工程
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