Advanced Optical Materials
·
2021
·Vol. 9
·期 19
·2100699
·
IF 9.926
Laiying Jing,Yiran Wang,Gang Lian,Baitao Zhang,Deliang Cui,Jingliang He,Qilong Wang,Ching-Ping Wong
2D van der Waals (VDWs) heterostructures have attracted much attention due to their exotic electronic and optical properties, which provide a new platform for material science and device fabrication. In this work, by coupling atomic interface engineering, an alternately intercalated superstructure of carbon and MoS 2 monolayers (m-C/MoS 2 ) is designed as a novel saturable absorber (SA) for mode-locked ultrafast laser generation. The novel intercalated structures exhibit excellent properties including wide bandgap, fast inter- and intra-band carrier relaxation time, and superior saturable absorption characteristic, etc. Consequently, a continuous wave mode-locked Yb:CALGO bulk laser with pulse width as short as 92 fs is achieved by using the prepared m-C/MoS 2 SA mirror, which is much shorter than those obtained with other reported 2D materials. This study provides a valuable strategy for the development of ultrashort pulse femtosecond lasers. The novel VDWs heterostructures also open new avenues toward advanced photonic devices.
研究领域:
材料科学
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光学工程
·
物理学
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Xiameng Li,Jian Liu,Feifei Qin,Da Chen,Xu Wang
Van der Waals (vdW) heterostructures offer a promising platform for optimizing and controlling physical properties of a variety of materials and devices, which has attracted extensive attentions in ultrafast photonic applications. Here, a hybrid vdW saturable absorber (SA) based on ZnO sphere heterostructures has been fabricated by transferring the low-temperature hydrothermal method ZnO spheres onto gold mirrors and covering with Au nanoparticles and the graphene layer. In comparison with the ZnO sphere SA, the vdW SA exhibits the stronger emission intensity in the ultraviolet-visible range and the higher optical absorption in the near-infrared range, respectively. Meanwhile, by using the balanced twin-detector technology, a modulation depth of 6.6% has been obtained from vdW SA, which is 2.8 times greater than that of the solo ZnO SA due to the harvest of photons and the transfer of photon-generated carriers in the vdW heterostructure. Based on the hybrid vdW SA, a quite stable Q-switched laser and a mode-locked laser operation with a tunable wavelength range from 1531.4 to 1560.4 nm have been achieved. These results demonstrate a effective strategy for enhancing nonlinear optical properties of SAs and pave a way for developing novel types of SAs for the application of ultrafast lasers.
研究领域:
光学
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材料科学
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DOI
高影响因子
APPLIED PHYSICS LETTERS
·
2023
·Vol. 122
·期 11
·
IF 4
Yang Dingbang,Jiang Junjie,Chen Jiaxin,Guo Xiao,Yang Xinhui,Zheng Xiaoming,Deng Chuyun,Xie Haipeng,Song Fei,Ouyang Fangping,Yuan Xiaoming,Chen Mingxing,Huang Han
Transition metal dichalcogenide based 2D/2D or 2D/3D van der Waals heterostructures exhibit superior properties for high-performance electronics, tunneling transistors, and catalysts. Here, we report on the fabrication of high quality 2D/3D MoS 2 /MoO 2 heterostructures with an atomic clean interface by one-step chemical vapor deposition. Optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy, and energy dispersive spectroscopy measurements reveal the high-quality of as-grown samples and the specific epitaxial relationship between MoS 2 and MoO 2 : MoS 2 [ 1 ¯ 1 ¯ 20]//MoO 2 [001] and MoS 2 [ 1 ¯ 100]//MoO 2 [201]. Photoluminescence and Kelvin probe force microscopy measurements combined with density functional theory calculations confirm the interfacial charge transfer from MoS 2 to the underlying MoO 2 . Furthermore, MoO 2 induced in-plane anisotropy in MoS 2 was revealed using angle-resolved polarized Raman and photoluminescence spectroscopy with anisotropic ratios of 1.27 (Raman) and 1.29 (photoluminescence), respectively, which is most possibly attributed to anisotropic interfacial charge interactions. Our findings provide an excellent platform for the investigation on interfacial effects. Moreover, the in-plane anisotropy in MoS 2 induced by MoO 2 has expanded the application of isotropic MoS 2 in the polarization-dependent fields.
研究领域:
材料科学
·
物理化学
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DOI
高影响因子
Nano Energy
·
2021
·
IF 17.881
Pengfei Yan,Liang Ji,Xiaopeng Liu,Qinghua Guan,Junling Guo,Yonglong Shen,Haijun Zhang,Weifeng Wei,Xinwei Cui,Qun Xu
2D heterostructures offer a great opportunity in seeking high-performing energy storage materials ; however, performance ceiling exists, limited by their van-der-Waals (vdW) interactions. Here, we explore a novel 2D, amorphous MoO 3−x (aMoO 3−x ) on Ti 3 C 2 -MXene, non-vdW heterostructure via a facile synthesis route. Density functional theory computations suggest that the non-vdW heterostructure can strongly stabilize aMoO 3−x while maintaining electrical conductivity at a high level. Facile 2D Li-ion diffusion can then be achieved in the restacked 2D non-vdW heterostructures due to the weakened interactions between two defective MoO 3−x layers, leading to a capacitor-like interlayer diffusion reaching a large capacity of 426 C g −1 on the surface of the amorphous layer and a diffusion-controlled intralayer diffusion of 546 C g −1 within the amorphous layer. These characteristics optimize Li-ion storage kinetics while achieving full capacities of amorphous materials with high stability. This work might offer a feasible platform of 2D non-vdW heterostructures for boosting and understanding Li-ion storage performance.
研究领域:
材料科学
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能源科学
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计算化学
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DOI
高影响因子
Frontiers of Physics
·
2018
·Vol. 14
·期 1
·1-8
·
IF 1.892
Liu Yue,Zhou Yu,Zhang Hao,Ran Feirong,Zhao Weihao,Wang Lin,Pei Chengjie,Zhang Jindong,Huang Xiao,Li Hai
Interlayer interactions at the heterointerfaces of van der Waals heterostructures (vdWHs), which consist of vertically stacked two-dimensional materials, play important roles in determining their properties. The interlayer interactions are tunable from noncoupling to strong coupling by controlling the twist angle between adjacent layers. However, the influence of stacking sequence and individual component thickness on the properties of vdWHs has rarely been explored. In this work, the influence of the stacking sequence of WSe 2 and graphene in vdWHs of graphene-on-WSe 2 (graphene/WSe 2 ) or WSe 2 -on-graphene (WSe 2 /graphene), as well as their thickness, on their interlayer interaction was systematically investigated by ultralow-frequency (ULF) Raman spectroscopy. A series of ULF breathing modes of WSe 2 nanosheets in these vdWHs were observed with frequencies highly dependent on graphene thickness. Interestingly, the ULF breathing modes of WSe 2 red-shifted in graphene/WSe 2 and WSe 2 /graphene configurations, and the amount of shift in the former was much larger than that in the latter. In contrast, no obvious ULF shift was observed by varying the twist angle between WSe 2 and graphene. This indicates that the interlayer interaction is more sensitive to the stacking sequence compared with the twist angle. The results provide alternative approaches to modulate the interlayer interaction of vdWHs and, thus, tune their optical and optoelectronic properties.
研究领域:
材料科学
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光谱学
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DOI
高影响因子
Nano Research
·
2020
·Vol. 13
·期 4
·959-966
·
IF 8.183
Wang Lin,Yue Qiuyan,Pei Chengjie,Fan Huacheng,Dai Jie,Huang Xiao,Li Hai,Huang Wei
Recently, transition metal dichalcogenides (TMDCs) nanoscrolls have exhibited unique electronic and optical properties due to their spiral tubular structures, which are formed by rolling up monolayer TMDCs nanosheets. Inspired by the excellent physical and chemical properties of TMDCs van der Waals heterostructures (vdWHs), it is highly desirable to scroll TMDCs vdWHs for potential optoelectronic applications. In this work, WS 2 /MoS 2 vdWHs nanoscrolls were massively prepared by dropping aqueous alkaline droplet on chemical vapor deposition (CVD)-grown bilayer WS 2 /MoS 2 vdWHs, which were formed by growing monolayer WS 2 islands on top of monolayer MoS 2 nanosheets simultaneously. The optical microscopy (OM), atomic force microscopy (AFM), ultralow frequency (ULF) Raman spectroscopy and transmission electron microscopy (TEM) were utilized to characterize the WS 2 /MoS 2 vdWHs nanoscrolls. As-obtained WS 2 /MoS 2 vdWHs nanoscrolls exhibited new ULF breathing mode as well as shear mode peaks due to the strong interlayer interaction. Notably, the photosensitivities of WS 2 /MoS 2 vdWHs nanoscrolls-based devices were about ten times higher than those of WS 2 /MoS 2 vdWHs-based devices under blue, green and red lasers, respectively, which could be attributed to the ultrafast charge transfer at alternative WS 2 /MoS 2 and MoS 2 /WS 2 multi-interfaces in scrolled structure. Our work suggested that TMDCs vdWHs scrolls could be promising candidates for optoelectronic applications.
研究领域:
材料科学
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光学
·
纳米技术
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产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 48
·2306668
·
IF 19
Yingqian Cen,Yudi Tu,Jingting Zhu,Yutao Hu,Qiaoyan Hao,Wenjing Zhang
Devices based on 2DMs van der Waals (vdW) heterostructures always compose of multiple contacts. Due to the instability of nanoscale 2DMs and interfaces, these contacts can be affected by the operation-induced photo or thermal effect. They can trigger the evolution of junctions and rearrange the junctions across a device, which are detrimental for applications. Herein, vdW heterostructure of indium selenide (InSe) and black phosphorus (BP) on Au electrodes are investigated to reveal the contact evolution and its relation to device performance. During operation, light irradiation changes the I–V characteristics from symmetry to strong rectification. Photocurrent mapping and Kelvin-probe force microscopy (KPFM) reveal triple junctions in this heterostructure, i.e., Au-InSe junction, InSe homojunction, and InSe-BP heterojunction. The variation of I–V characteristics of vdW heterostructure is ascribed to the evolution of Au-InSe junction from quasi-ohmic junction with a near-zero work function difference ( Δφ ) to a strong Schottky junction ( Δφ = ≈0.27 eV). The stabilized device demonstrates distinguished time-domain response at individual junctions and overall device, indicating the evolution of contacts and the consequent opposite junction directions degrade the overall device performance. This research emphasizes the importance of dealing with heterogeneous contacts and junction directions in designing vdW heterostructure photodetectors.
研究领域:
材料科学
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纳米技术
·
光电器件
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产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2022
·Vol. 32
·期 41
·2202239
·
IF 19.924
Guanyu Chen,Xinyi Hu,Mingwei Gu,Hao Wu,Keyu Chen,Hao Yu,Baiyu Ren,Zhong Li,Yange Luan,Tao Tang,Yinfen Cheng,Haibo Huang,Liguo Chen,Bao Yue Zhang,Jian Zhen Ou
Ultrathin semiconducting van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) play a critical role in developing next-generation electronic and optoelectronic devices. The replacement of one component of the heterostructure by transition metal oxides (TMOs) certainly brings in numerous benefits including long-term stability and novel functionalities. However, the single-step chemical-vapor deposition growth of TMOs/TMDs vdW heterostructures, as a highly desired approach for large-scale fabrication and practical implementation, is challenging due to contradictory growth atmospheres of TMOs and TMDs. Here, the single-step growth of an ultrathin WO 3–x /WS 2 vdW heterostructure based on the quantity-driven discrepant interaction between S and the precursor, in which S induces sulfidation to produce WS 2 in the S-rich phase and is changed to the reduction role to obtain sub-stoichiometric WO 3–x in the S-deficient phase is realized. Both WO 3–x and WS 2 exhibit semiconducting properties with a favorable type-II band alignment. A wide response across the entire visible spectrum with a large photo-responsivity of 4375 A W −1 , a detectivity of 5.47 × 10 11 Jones, and sub-ms switching kinetics at 405 nm is achieved without gating bias, which is significantly improved over other reported ultrathin vdW heterostructures. This study demonstrates the possibility of single-step-growing TMOs/TMDs vdW heterostructures and their strong potential in high-performance optoelectronic devices.
研究领域:
材料科学
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光电子学
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DOI
高影响因子
Lubricants
·
2024
·Vol. 12
·期 5
·163
·
IF 3.1
Yunqi Fang,Yang Sun,Fengqin Shang,Jing Zhang,Jiayu Yao,Zihan Yan,Hangyan Shen
Van der Waals heterostructures with incommensurate contact interfaces show excellent tribological performance, which provides solutions for the development of new solid lubricants. In this paper, a facile electrostatic layer-by-layer self-assembly (LBL) technique was proposed to prepare multi-layer van der Waals heterostructures tungsten disulfide/hexagonal boron nitride (vdWH WS2/h-BN). The h-BN and WS2were modified with poly (diallyldimethylammonium chloride) (PDDA) and sodium dodecyl benzene sulfonate (SDBS) to obtain the positively charged PDDA@h-BN and the negatively charged SDBS@WS2, respectively. When the mass ratio of PDDA to h-BN and SDBS to WS2were both 1:1 and the pH was 3, the zeta potential of PDDA@h-BN and SDBS@WS2were 60.0 mV and −50.1 mV, respectively. Under the electrostatic interaction, the PDDA@h-BN and SDBS@WS2attracted each other and stacked alternately along the (002) crystal plane forming the multi-layer (four-layer) vdWH WS2/h-BN. The addition of the multi-layer vdWH WS2/h-BN (1.0 wt%) to the base oil resulted in a significant reduction of 33.8% in the friction coefficient (0.104) and 16.8% in the wear rate (4.43 × 10−5mm3/(N·m)). The excellent tribological property of the multi-layer vdWH WS2/h-BN arose from the lattice mismatch (26.0%), a 15-fold higher interlayer slip possibility, and the formation of transfer film at the contact interface. This study provided an easily accessible method for the multi-layer vdWH with excellent tribological properties.
研究领域:
材料科学
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摩擦学
·
纳米技术
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产品关联
DOI
高影响因子
NATURE
·
2020
·Vol. 579
·期 7799
·368-374
·
IF 42.779
Li Jia,Yang Xiangdong,Liu Yang,Huang Bolong,Wu Ruixia,Zhang Zhengwei,Zhao Bei,Ma Huifang,Dang Weiqi,Wei Zheng,Wang Kai,Lin Zhaoyang,Yan Xingxu,Sun Mingzi,Li Bo,Pan Xiaoqing,Luo Jun,Zhang Guangyu,Liu Yuan,Huang Yu,Duan Xidong,Duan Xiangfeng
Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest 1 , 2 , 3 , 4 . However, most vdWHs reported so far are created by an arduous micromechanical exfoliation and manual restacking process 5 , which—although versatile for proof-of-concept demonstrations 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 and fundamental studies 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 —is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe 2 /WSe 2 , NiTe 2 /WSe 2 , CoTe 2 /WSe 2 , NbTe 2 /WSe 2 , VS 2 /WSe 2 , VSe 2 /MoS 2 and VSe 2 /WS 2 . Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moiré superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe 2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe 2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices.
研究领域:
材料科学
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纳米技术
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Linghao Zong,Zijuan Ma,Xin Zhao,Juanjuan Yang,Yawen Liu,Peng Hu,Feng Teng,Haibo Fan,Jiaming Song
The call for green economy has accelerated the research development of energy-saving optoelectronic devices. The choice of photoelectric material and the design of device configuration are crucial for achieving high device performances. In this study, we investigated the photoelectric response behaviors of van der Waals (vdW) heterostructure photodetectors by employing a type-II MnPSe 3 /MoS 2 heterojunction for charge carrier transport. Two types of device architectures were designed, one has a vertically stacked heterostructure with the photogenerated carriers transferring in an out-of-plane direction in the overlapped area of both materials; the other utilized the photogating effect using the top MoS 2 as the photogate for the carrier distribution modulation and MnPSe 3 at the bottom as the carrier transport channel. Both PDs demonstrated a broadband photoelectric response in the range of 254-1020 nm under the biased condition. Besides, the former device demonstrated a distinct self-powered behavior with the spectral detection range spanning from 365 nm to 635 nm, which was ascribed to higher charge carrier separation efficiency by the built-in electric field of the MnPSe 3 /MoS 2 heterojunction and the asymmetric barrier heights between two metal-semiconductor interfaces. This study reveals the possibility for harnessing the MnPSe 3 /MoS 2 hybrid vdW in low-power consuming optoelectronic devices and its application potential in broadband photoelectric detection.
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产品关联
DOI
高影响因子
Materials Today Chemistry
·
2025
·
IF 6.7
Dongfang Ji,Jiaqi Han,Junwei Ding
Although two-dimensional (2D) non-van der Waals (non-vdW) heterostructures with intriguing physical and chemical merits have the potential application in rechargeable batteries, they still lack valid synthetic methods due to their three-dimensional chemical bonding characteristics. Here, a facile one-step method to synthesize the 2D non-vdW V 8 C 7 /V 2 O 3 heterostructure based on the conversion of V 2 AlC MAX phase in the molten copper chloride is developed. Accompanied with the aluminium layer etching, the V 2 AlC precursor is transformed into the intermediate product (i.e., 2D non-vdW V 8 C 7 ). Interestingly, an operando conversion from the intermediate 2D non-vdW V 8 C 7 to the final 2D non-vdW V 8 C 7 /V 2 O 3 heterostructure is achieved via the extrinsic adsorbed oxygen. Similarly, other types of halogenated salts, including copper bromide and cuprous iodide, can also be as etchants to obtain the 2D non-vdW V 8 C 7 /V 2 O 3 heterostructure. Owing to the 2D character and unique hetero-structure, the obtained 2D non-vdW V 8 C 7 /V 2 O 3 heterostructure can be used as a superior cathode of sodium metal batteries. Meanwhile, the resultant 2D non-vdW V 8 C 7 /V 2 O 3 heterostructure can also enhance the whole performance of aqueous zinc-iodine batteries. This new construction method of 2D non-vdW heterostructures facilitates the development of high-performance rechargeable batteries.
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DOI
高影响因子
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