A remote phosphor coating by using Sr 3 (Al,Si)(O, F) 5 :Ce 3+ (SASF:Ce 3+ ) on glass substrate was prepared by a simple and convenient screen printing method. The crystalline phase and the distribution of SASF:Ce 3+ crystals in coating were investigated by XRD and SEM, respectively. The scattering light and absorption light properties of remote phosphor coating with different thicknesses were discussed through Lambert–Beer’s law. The relationship between luminous efficiency and absorption coefficient was demonstrated. White light emitting diode prototype fabricated with blue chip and the prepared patterned SASF:Ce 3+ remote phosphor in this work showed excellent performances, opening a cost-effective process to generate planar white light.
Tiqun Wei,Liang Yang,Zhihao Jiang,Zihao Han,Jianwei Dao,Run Hu
White light-emitting diodes (LEDs) have received widespread attention for achieving high color rendering (R a > 90) by utilizing RGB phosphors in combination with near-ultraviolet (NUV) chips. However, it is still a challenge to achieve R a > 95 with blue chips for commercial RGB phosphors dispersed in phosphor-in-glass (PiG). In this study, a low melting point tin fluorophosphate glass matrix was selected as the host glass and embedded with commercial CaAlSiN 3 :Eu 2+ (CASN), BaSi 2 O 2 N 2 :Eu 2+ (BSON), and Y 3 (Al,Ga) 5 O 12 :Ce 3+ (YAG) phosphor. The PiG was successfully prepared, exhibiting full-spectrum (R a > 95). The phase distribution and composition of the PiG were investigated in detail. Notably, under 460 nm blue chip excitation, PiG-LEDs of different concentrations exhibited excellent color rendering (R a > 90). With an increase in phosphor concentration, the R a value gradually rises. When the phosphor concentration is 11 %, the constructed PiG-LED exhibits bright white LEDs with ultra-high color rendering (R a = 96.2) and low correlated color temperature (CCT = 3317 K) under 300 mA current. The color quality of white LEDs was systematically investigated using the Illuminating Engineering Society of North America's (IES) Evaluation System, and the PiG-LED exhibited fidelity index (R f ) and gamut index (R g ) close to sunlight (R f = 91, R g = 101). In the emission spectrum's temperature dependency , when the temperature rises from 25 °C to 150 °C, the luminous intensity only decreases 9.18 %, indicating that the PiG has superior thermal resistance . Thus, the PiG has high color rendering and superior thermal characteristics, showing great potential application in high-power white LEDs.
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