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Solar RRL · 2018 ·Vol. 2 ·期 10 ·1800144 · IF 0

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

Muhammad Ishaq,Hui Deng,Shengjie Yuan,Huan Zhang,Jahangeer Khan,Umar Farooq,Haisheng Song,Jiang Tang

Sb 2 (Se x S 1–x ) 3 has been proven a very promising light absorbing material for photovoltaic applications due to its high stability, tunable band gap, non-toxic element, and high extinction coefficient. For Sb 2 (Se x S 1–x ) 3 alloy film deposition, the authors develop a single source based rapid-thermal-evaporation (RTE) method instead of the traditional in-situ sulfurization or double source co-evaporation based RTE method. The absorber band gap can be precisely tuned from 1.1 to 1.7 eV by simply varying the molar ratio of Sb 2 Se 3 and Sb 2 S 3 source powder. From the systematical composition screening, FTO/CdS/Sb 2 (Se 0.68 S 0.32 ) 3 /Au devices show higher power conversion efficiency (PCE ∼ 4.17%) when compared with other absorber compositions based devices. In order to achieve thinner ETL layers and simultaneously avoid pinholes led by rough FTO surface, we introduce for the first time double buffer layer in the Sb 2 (Se 0.68 S 0.32 ) 3 device system which could further improve the device efficiency from 4.17% to 5.73%. The double buffer layer ZnO/CdS helped to form graded energy band alignment, suppress charge recombination and efficiently extract electrons. The devices obtained higher J sc and V oc supported by various physical characterization analyses. The facile single source deposition method, efficient double buffer layer device structure and notable PCE are expected to pronouncedly promote antimony chalcogenide device development.

研究领域: 材料科学 · 光伏技术 · 半导体物理 · 薄膜器件 · 能源材料
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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2020 ·Vol. 22 ·期 23 ·13214-13222 · IF 3.43

Tailoring hole injection of sol–gel processed WOx and its doping in PEDOT:PSS for efficient ultraviolet organic light-emitting diodes

Yongfang Yuan,Xiaowen Zhang,Dongliang Li,Xiuyun Zhang,Lihui Wang,Zongliu Lu,Liming Liu,Feng Chi

Hole injection governs the efficiency of ultraviolet organic light-emitting diodes (UV OLEDs) due to the deep highest occupied molecular orbital level of the emissive molecule. Tungsten oxides (WOx), transition metal oxides with high work functions and good stability, cast light on solving this problem. By a low-cost, scalable and high-throughput manufacturing process, herein the facile synthesis of a WOx solution and its doping in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS + WOx) is systematically investigated for assembling efficient UV OLEDs. X-ray diffraction, atomic force microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy measurements confirm that WOx and PEDOT:PSS + WOx have good film morphology and exceptional electronic properties, such as the oxygen deficiency dominated non-stoichiometry of WOx. With PEDOT:PSS + WOx tailoring hole injection and 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole as the emitter, the UV OLEDs show outstanding electro-optic performance, with a radiance of 3.98 mW cm−2, external quantum efficiency of 2.30%, electroluminescence peak at 400 nm and full width at half maximum of 47 nm, which is superior to the performance of the corresponding reference materials. The mechanism of charge transfer from the PEDOT polycation to WOx, enhancing conductivity, is responsible for the robust hole injection/transport and is further elucidated by ultraviolet photoelectron spectroscopy and impedance spectroscopy, contributing to the optimization of the carrier balance and recombination zone. Our results illustrate an alternative approach for boosting UV OLED performance and advancing organic electronics.

研究领域: 材料科学 · 有机电子学 · 薄膜器件 · 光电功能材料 · 半导体器件物理
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE · 2016 ·Vol. 213 ·期 5 ·1324-1328 · IF 1.648

A facile non-vacuum-based Cu2ZnSnSe4 superstrate solar cell with 2.44% device efficiency

Yongzheng Zhang,Yuxiu Sun,Hao Wang,Hui Yan

Cu 2 ZnSnSe 4 (CZTSe) solar cell with a facile superstrate structure of carbon/CZTSe/CdS/ITO was fabricated entirely by non-vacuum processes. The influence of selenization temperature on the composition of CZTSe layer was briefly investigated. Compared with current superstrate-type CZTS(e) solar cells, the present CZTSe superstrate solar cell exhibited a higher power conversion efficiency of 2.44%.

研究领域: 材料科学 · 光伏技术 · 无机半导体 · 能源材料 · 薄膜器件
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Journal of Materials Chemistry A · 2016 ·Vol. 4 ·期 36 ·13795-13802 · IF 8.262

Polymer-coated graphene films as anti-reflective transparent electrodes for Schottky junction solar cells

Xin Gan,Ruitao Lv,Haoyue Zhu,Lai-Peng Ma,Xuyang Wang,Zexia Zhang,Zheng-Hong Huang,Hongwei Zhu,Wencai Ren,Mauricio Terrones,Feiyu Kang

The traditional fabrication of graphene-based devices requires polymer-assisted transfer of graphene and a removal procedure of polymer coatings. Here, we propose to turn this process on its head and demonstrate a novel strategy of polymer-coated graphene as an optically antireflective and transparent electrode used in a graphene/silicon (G/Si) solar cell. No additional polymer removal and antireflection coatings (e.g. TiO2 colloids) are needed in our strategy. By engineering the thickness of polymer protective coatings, the light absorption and short-circuit current density of graphene solar cells can be greatly enhanced. We also showed that retaining the polymer coatings avoided the degradation of electrical conductivity of graphene films. With HNO3 doping applied on PMMA-coated G/Si solar cells, the PCEs can reach up to 13.34%. The long-term stabilities of HNO3 doped G/Si solar cells are also improved by using fluoropolymer (CYTOP) coatings on graphene. Our approach provides a novel fabrication method of transparent graphene electrodes for graphene-based optoelectronic devices with excellent light absorption.

研究领域: 材料科学 · 光伏技术 · 纳米技术 · 光电子学 · 薄膜器件
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