Epoxy adhesives have found extensive application in the fields of aerospace, automotive, and electronics industries due to their excellent mechanical properties, bond strength, and thermal stability. However, the cured epoxy adhesive forms three-dimensional (3D) cross-linked networks, which makes debonding challenging and cannot meet the requirements of temporary positioning, recycling, and reuse of precision parts particularly in the electronic devices area. The incorporation of dynamic networks into adhesives is an effective approach to achieving debonding. In this study, a series of anthracene-modified debonding epoxy adhesives were successfully synthesized using anthracene-9-ylmethyl 3-mercaptopropanoate (ANSH) and N,N-diglycidyl-4-glycidyloxyaniline (AFG-90H) by epoxy–thiol “click reaction” under Et3N conditions. The adhesive undergoes a synergistic curing process involving a [4π + 4π] cycloaddition reaction and epoxy self-curing under light and heat conditions (365 nm UV-light irradiation and 65 °C), resulting in optimal bonding with an excellent shear strength of 2.01 ± 0.14 MPa. Moreover, it is capable of breaking the covalent bonds of the anthracene dimers at milder heat stimulation (120 °C), with a debonding rate of up to 87%. The findings offer a promising avenue for the development of a debonding epoxy adhesive.
Thermoplastic polyimide (TPI) has been extensively applied in electronic industry due to improved processibility, superior mechanical and dielectric properties. However, TPI is still restricted by the limited thermal stability and insufficient UV absorption for the application of temporary bonding and debonding (TBDB) in ultra-thin chip package. In this work, the rigid biphenyl group, twisted non-coplanar structure, rigid bulky side group and flexible ether bond are introduced to obtain a series of novel quaternary copolymerized TPIs with superior comprehensive performance. The results show that the as-prepared TPI possesses excellent solubility in NMP , DMF, DMAc and DMSO , and thermoplasticity ( E ’ drop > 10 3 MPa). Besides, the temperature of 5% weight loss and glass transition temperature could achieve as high as 548.1 °C and 335.4 °C, respectively. Furthermore, the tensile strength of TPI-4 is 128.7 MPa and elongation at break is about 14.2%. Moreover, the TPI-4 also exhibits superior adhesion on silicon wafer (adhesion strength >5 B by hundred grid test) and wonderful absorption at 355 nm UV laser (99.7%). At last, the application in TBDB process has also been proved with a laser energy of 400 mJ/cm 2 within 60 s, showing superior efficiency and low-cost. All these results prove their application in TBDB of ultra-thin chip package for 5G era and so forth.
危险品化学品经营许可证（带存储）