RSC Advances
·
2019
·Vol. 9
·期 8
·4351-4360
·
IF 3.049
Xuan Wang,Bingbing Gao,Zhongze Gu
Patterned nanomaterials have promising applications in various fields, particularly for microfluidic analysis and functional surfaces. Studies on such materials have focused on developing effective methods for fabricating patterns with various nanomaterials. Here, inspired by pollen transfer by bees, we present a simple and effective method for patterning multiple functional materials onto flexible substrates by using adhesive tapes. With the advantages of high alignment accuracy, high pattern resolution and not requiring additional etching or harsh processes, the proposed method can easily be applied to diverse nanomaterials that would not be tolerant of physical, thermal, or chemical treatments, as such treatments could deform the thin film and alter its functionalities. Patterned devices were fabricated and showed excellent performance, demonstrating the applicability of this simple and practical transfer printing technique. The proposed patterning method possesses the distinct advantages of a short operating time and high patterning yield, which highlight the considerable potential for the application of this method for optical and biomedical devices.
研究领域:
材料科学
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纳米技术
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生物医学工程
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产品关联
DOI
PubMed
高影响因子
ACS Nano
·
2024
·
IF 15.8
Lingxiao Yu,Minglang Gao,Qian Lv,Hanyuan Ma,Jingzhi Shang,Zheng-Hong Huang,Zheng Sun,Ting Yu,Feiyu Kang,Ruitao Lv
As traditional silicon-based materials almost reach their limits in the post-Moore era, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been regarded as next-generation semiconductors for high-performance electrical and optical devices. Chemical vapor deposition (CVD) is a widely used technique for preparing large-area and high-quality TMDCs. Yet, it suffers from the challenge of transfer due to the strong interaction between 2D materials and substrates. The traditional PMMA-assisted wet etching method tends to induce damage, wrinkles, and inevitable polymer residues. In this work, we propose an etch-free and clean transfer method via a water intercalation strategy for TMDCs, ensuring a high-fidelity, wrinkle-free, and crack-free transfer with negligible residues. Furthermore, metal electrodes can also be transferred via this method and back-gate field-effect transistors (FETs) based on CVD-grown monolayer WSe2 with van der Waals (vdW) metal/semiconductor contacts are fabricated. Compared to the PMMA-assisted transfer method (∼1.2 cm2 V–1 s–1 hole mobility with ∼2 × 106 ON/OFF ratio), our high-fidelity transfer method significantly enhances the electrical performance of WSe2 FET over one order of magnitude, achieving a hole mobility of ∼43 cm2 V–1 s–1 and a high ON/OFF ratio of ∼5 × 107 in air at room temperature.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
Scientific Reports
·
2019
·Vol. 9
·期 1
·1-11
·
IF 4.011
Chandrashekar Bananakere Nanjegowda,Smitha Ankanahalli Shankaregowda,Wu Yingchun,Cai Nianduo,Li Yunlong,Huang Ziyu,Wang Weijun,Shi Run,Wang Jingwei,Liu Shiyuan,Krishnaveni S.,Wang Fei,Cheng Chun
Transfer method of chemically vapor deposition graphene is an appealing issue to realize its application as flexible and transparent electrodes. A universal stamping method to transfer as grown graphene from copper onto different flexible and transparent polymers (FTPs) reported here ensures simple, robust, rapid, clean and low-cost. This method relies on coating ethylene vinyl acetate (EVA) onto the as grown graphene, binding EVA coated graphene/Cu with FTPs and delamination by hydrogen bubbling process, which is analogous to the method used by stamping process where ink carries the imprint of the object onto any materials. The fate of the stamping method depends on how strongly the adhesion of EVA coated graphene/Cu with target FTPs. Interestingly, we have found that the thin film of EVA/graphene/Cu can only bind strongly with the FTPs of less than 25 µm in thickness and lower glass transition temperature value to the EVA while wide range of other FTPs are considered upon surface engineering to enhance the binding strength between FTPs and EVA. What’s more, the electrical performance was investigated with a demonstration of triboelectric nanogenerators which confirmed the reliability of graphene transfer onto the FTPs and prospect for the development of flexible and transparent electronics.
研究领域:
材料科学
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纳米技术
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产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 35
·期 29
·2300621
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IF 29.4
Zhaoning Hu,Fangfang Li,Haotian Wu,Junhao Liao,Quan Wang,Ge Chen,Zhuofeng Shi,Yaqi Zhu,Saiyu Bu,Yixuan Zhao,Mingpeng Shang,Qi Lu,Kaicheng Jia,Qin Xie,Guorui Wang,Xiaodong Zhang,Yinbo Zhu,Hengan Wu,Hailin Peng,Li Lin,Zhongfan Liu
Recently, scalable production of large-area graphene films on metal foils with promising qualities is successfully achieved by eliminating grain boundaries, wrinkles, and adlayers. The transfer of graphene from growth metal substrates onto functional substrates remains one inescapable obstacle on the road to the real commercial applications of chemical vaport deposition (CVD) graphene films. Current transfer methods still require time-consuming chemical reactions, which hinders its mass production, and produces cracks and contamination that strongly impede performance reproducibility. Therefore, graphene transfer techniques with fine intactness and cleanness of transferred graphene, and improved production efficiency would be ideal for the mass production of graphene films on destination substrates. Herein, through the engineering of interfacial forces enabled by sophisticated design of transfer medium, the crack-free and clean transfer of 4-inch-sized graphene wafers onto silicon wafers within only 15 min is realized. The reported transfer method is an important leap over the long-lasting obstacle of the batch-scale graphene transfer without degrading the quality of graphene, bringing the graphene products close to the real applications.
研究领域:
材料科学
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纳米技术
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化学工程
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DOI
高影响因子
危险品化学品经营许可证（带存储）