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Journal of Materials Chemistry C · 2023 ·Vol. 11 ·期 26 ·9014-9022 · IF 6.4

Laser-driven NIR light source based on MgO:Cr3+,Ni2+ phosphor-in-glass film for NIR spectroscopy application

Simin Gu,Bomei Liu,Shuaichen Si,Jing Wang

Laser-driven lighting technology is a remarkable innovation in the field of solid-state lighting. High-efficiency white light sources have been commercially produced, but laser-driven near-infrared (NIR) light source has not yet been captured, which hindered the numerous optoelectronic applications such as NIR spectroscopy and imaging techniques. Inspired by the observation that laser-driven lighting could break the limited power density and achieve effective output optical power density under higher incident optical power density, here, a novel NIR MgO:Cr3+,Ni2+ phosphor-in-glass film was prepared and combined on the sapphire substrate to fabricate laser-driven NIR light source. The results show that laser-driven NIR light source based on blue laser and MgO:Cr3+,Ni2+ phosphor-in-glass film combination could achieve a NIR output optical power density of 5.3 mW mm−2, which is 5 times higher than LED-driven NIR light source based on the same MgO:Cr3+,Ni2+ phosphor-in-glass film. Finally, we successfully demonstrated the potential applications of the as-fabricated laser-driven NIR light source in the field of night vision and high-penetration imaging. This finding provides an approach to achieving high-performance NIR light sources thereby opening up a new avenue for the exploration of NIR spectroscopy technology.

研究领域: 光学 · 材料科学 · 光谱学
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ADVANCED MATERIALS · 2024 ·Vol. 36 ·期 52 ·2413857 · IF 27.4

Phosphor-in-Ceramic-Converted Laser-Driven Near-Infrared Light Sources for Multiple Intelligent Spectroscopy Applications

Weibin Chen,Yuzhen Wang,Gaochao Liu,Chaojie Li,Zhiguo Xia

Ultrabright broadband near-infrared (NIR) phosphor-converted laser diode (pc-LD) as a light source is increasingly essential for improving the sensitivity and spatial resolution of intelligent NIR spectroscopy technologies. However, the performance of NIR pc-LD is greatly hindered by the low external quantum efficiency (EQE) and poor thermal resistance of phosphor materials. Herein, a highly stable phosphor-in-ceramic (PiC) film deposited on high thermal conductivity substrate, in which the NIR-emitting Ca 3 MgHfGe 3 O 12 :Cr 3+ phosphor is incorporated into a glass-crystallized Ca 3 Ga 2 Ge 3 O 12 ceramic matrix, along with the formation of a new type PiC composite material with high efficiency, absorbance, and thermal conductivity, is designed and prepared. The obtained PiC exhibits an impressive EQE of 57.7%, high thermal conductivity of 17.1 W m −1 K −1 , and the PiC wheel demonstrates a broadband NIR emission exceeding 5 W when excited by a 450 nm laser. Finally, a groundbreaking electrically driven pc-LD device based on PiC achieves 1.6 W of NIR output, enabling multiple intelligent spectroscopy applications in archaeology and night vision imaging. This work paves the way for advancing broadband NIR light sources in a diverse range of photonic applications.

研究领域: 光学材料 · 光电子学 · 智能传感技术
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JOURNAL OF LUMINESCENCE · 2025 · IF 3.6

High-Efficiency and Thermally Stable Cr3+-Doped BaSiF6 Fluoride Phosphors for Broadband Near-Infrared LED Applications

Wei Wan,Man Li,Jingyan Jiang,Yifei Zhao,Yayun Zhou

Broadband near-infrared (NIR) light sources have emerged as crucial components in a wide array of technological applications, spanning from advanced imaging systems to night vision devices and healthcare therapy. The advent of light-emitting diodes (LEDs) has unlocked new opportunities for broadband NIR phosphor-converted LEDs (NIR pc-LEDs), characterized by improved efficiency, compact form factors, and low operating temperatures. However, high-performance NIR phosphors for high-power LEDs remain scarce. In this work, Cr 3+ -doped fluorides BaSiF 6 : x Cr 3+ (where x ranges from 2.5% to 15%) have been designed and synthesized, which offer high quantum efficiency and thermal stability to maintain ∼80% intensity at 450 K. Theoretical simulations demonstrate that BaSiF 6 , with a sufficiently large electronic bandgap of 7.8 eV, possesses the full potential to host NIR luminescent activators. Furthermore, molecular dynamics (MD) simulations validate its good thermal stability, enduring high temperatures exceeding 600 K annealing. The fabricated NIR pc-LED device using BaSiF 6 :Cr 3+ demonstrates high light output power and photoelectric efficiency under multiple driven currents, making it suitable for a wide range of applications as NIR light source. Capitalizing on the above merits, a prototype NIR transmission detector is demonstrated for potential applications in material inspection, medical diagnostics, and security systems. This research expands the repertoire of high-performance NIR phosphors for multifunctional use.

研究领域: 材料科学 · 光学工程 · 电子器件
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ACS Applied Electronic Materials · 2024 · IF 4.3

1530 nm Electroluminescence from Metal–Semiconductor–Metal Structured Devices Based on Oxygen–Erbium Co-doped MoS2

Lei Wang,Xiaohong Ji,Qinyuan Zhang

The 1530 nm emission of the Er intra-4f transition (4I13/2 → 4I15/2) is essential for telecom communication because it corresponds to the minimum-loss window of silica optical fibers. Herein, we develop a metal–semiconductor–metal structured light source based on O–Er co-doped MoS2. The electroluminescence device exhibits the 1530 nm emission at low drive voltages (<5 V), which is beneficial from the impact excitation with the space–charge-limited conduction mechanism. The characteristic of symmetric structure allows the devices to exhibit consistent electrical and electroluminescence performance at positive and negative voltages. The O doping contributes to such high-current electrical behavior, and the Er doping leads to increased trap-filled-limited voltage due to increased trap density. This work lays the foundation for developing near-infrared light sources constructed with two-dimensional materials.

研究领域: 材料科学 · 光电技术 · 纳米技术
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INORGANIC CHEMISTRY · 2024 · IF 4.3

Realizing Ultrabroadband NIR-II Emission and Wide-Range Wavelength Tuning in Cr4+-activated ABO2 (A = Li, Na; B = Al, Ga) Phosphors

Xiaowei Yang,Yanfei Zou,Chen Hu,Shikun Su,Zhenghang Wang,Houhe Dong,Wenying Teng,Bing Teng,Bingtao Zhang,Degao Zhong

Cr4+-activated phosphors are important candidate materials for NIR-II light sources, but providing a suitable lattice coordination environment for Cr4+ and achieving long wavelength broadband emission remains a challenge. In this work, a series of Cr4+-activated ABO2 (A = Li, Na; B = Al, Ga) phosphors were successfully prepared. Due to the presence of only tetrahedral coordination structures available for Cr4+ to occupy in the matrix crystal ABO2, the valence state and luminescence stability of Cr4+ are effectively guaranteed. Through the cation substitution design of A-site (Na → Li) and B-site (Ga → Al), the [BO4] tetrahedron is distorted and expanded, which degrades the symmetry of the Cr4+ coordination crystal field. Consequently, the central wavelength of the Cr4+ emission peak is tuned from 1280 to 1430 nm, and the fwhm is significantly extended from 257 to 355 nm. Thebroadband NIR-II light sources constructed with LiAlO2: 0.03Cr4+ and NaGaO2: 0.03Cr4+ phosphors verify their important potential applications in nondestructive testing and biological imaging.

研究领域: 材料科学 · 光学材料 · 固态化学 · 光子学 · 近红外光源
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