Materials Today Chemistry
·
2024
·
IF 6.7
Chengliang Lyu,Dashuai Sun,Zeyu Lyu,Sida Shen,Pengcheng Luo,Zhihang Yue,Zheng Lu,Luhui Zhou,Hongpeng You
Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) light sources have great potential for applications in information encryption , night vision, and non-destructive testing. However, designing efficient NIR phosphors with wide emission band remains a significant challenge. Here, we report a garnet-type NIR phosphor Gd 2 Mg 3 Ge 3 O 12 :Cr 3+ ,Yb 3+ (GMG:Cr 3+ ,Yb 3+ ). The GMG:0.06Cr 3+ phosphor shows a broadband emission peaking at 828 nm under 450 nm excitation, with a full width at half maximum (FWHM) of 188 nm. When Yb 3+ ions are introduced to construct Cr 3+ -Yb 3+ energy transfer, the obtained GMG:Cr 3+ ,Yb 3+ phosphor displays further widened emission band with a FWHM of 272 nm. Moreover, GMG:Cr 3+ ,Yb 3+ phosphor and commercial blue LED chips are combined to create NIR pc-LEDs, which have a photoelectric efficiency of 5.76% @ 100 mA and a maximum NIR output power of 17.21 mW @ 100 mA, demonstrating its potential applications in night vision, non-destructive testing, and information encryption.
研究领域:
材料科学
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光电子学
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固态照明
·
光子学
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Yixin Sun,Yining Wang,Minliang Deng,Xiaole Xing,Yiying Zhu,Mengmeng Shang
The swift progress in portable spectrometer technology has fostered a widespread need for compact light sources. Concurrently, near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs), characterized by their low cost and compact structure, emerge as an optimal choice. Inspired by phase optimization through fluxes, we successfully synthesized pure phase Lu 3 Mg 2 GaSi 2 O 12 (LMGS):Cr 3+ , 3 wt%MgF 2 luminescent materials by incorporating various fluxes including LiF, NaF, MgF 2 , CaF 2 , SrF 2 and BaF 2 . These materials emit broadband NIR light ranging from 620 nm to 1150 nm, with full width at half-maximums (FWHMs) exceeding 125 nm. By employing a dual-fluxes strategy to further enhance the luminescence intensity of Cr 3+ , the LMGS:3%Cr 3+ , 1 wt%NaF, 2 wt%MgF 2 sample exhibits a 2.45 times increase in emission intensity compared to the LMGS:3%Cr 3+ , 3 wt%MgF 2 sample. Concurrently, the quantum efficiency rises from 24 % to 46 %. Moreover, the integrated emission intensity of LMGS:3%Cr 3+ , 1 wt%NaF, 2 wt%MgF 2 retains at 75 %@425 K of its value at RT. Upon coupled with a 430 nm LED chip, the luminescent material exhibits an NIR output power of 43.8 mW@300 mA, indicating promising applications in rapid night identification, night vision and non-destructive testing.
研究领域:
材料科学
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光学材料
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固态照明
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光子学
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无机化学
✓ 已验证
DOI
高影响因子
DALTON TRANSACTIONS
·
2023
·Vol. 52
·期 9
·2853-2862
·
IF 4
Zurong Liao,Chaojie Li,Jiyou Zhong,Yang Li,Weiren Zhao
A broadband near-infrared (NIR) light source based on a phosphor-converted light-emitting diode (pc-LED) has attracted increasing interest to be used in non-destructive examination, security-monitoring and medical diagnosis fields, which stimulates the exploration of NIR phosphors with high performance. Herein, a series of Cr3+-activated garnet Ln3ScInGa3O12:Cr3+ (Ln = La, Gd, Y, and Lu) phosphors were reported, allowing an emission peak ranging from 726 to 822 nm. Among them, Y3ScInGa3O12:Cr3+ with an optimized Cr3+-doping concentration of 6 mol% exhibits a high internal quantum efficiency (IQE = 83.1%) and excellent absorption efficiency (AE = 44.2%) under 450 nm blue light excitation, enabling an external quantum efficiency as high as 36.7%. Moreover, this material can maintain 93.0% of the initial intensity when heated up to 423 K, implying outstanding thermal stability. Finally, a prototype NIR pc-LED device was fabricated by coating the optimized phosphor on a 455 nm LED chip, which generates a broadband NIR emission with a peak located at 765 nm and a full width at half maximum of 127 nm. The NIR output power and NIR photoelectric conversion efficiency of this device were found to be 38.01 mW and 11.0%, respectively, under 100 mA driving current, demonstrating the feasibility of this material to be applied in NIR pc-LEDs.
研究领域:
材料科学
·
光电技术
·
光子学
✓ 已验证
DOI
高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2023
·Vol. 25
·期 22
·15452-15462
·
IF 3.3
Zurong Liao,Jiyou Zhong,Chaojie Li,Huan Jiang,Weiren Zhao
Broadband near-infrared (NIR) spectroscopy generated from a phosphor-converted light-emitting diode (pc-LED) has multifunctional applications, including food-quality analysis, bio-medical and night-vision, stimulating the demand for developing various NIR phosphors with desired properties. Herein, we selected a highly distorted garnet Ca4HfGe3O12 as the host and explored the near-infrared luminescence of Cr3+. As expected, this material achieved a long-wavelength NIR emission and excellent absorption efficiency based on the effect of Jahn–Teller distortion. The synthesized Ca4HfGe3O12:Cr3+ phosphor exhibits a broadband NIR emission peaking at 840 nm with a full width at half maximum of 150 nm, and the absorption efficiency reaches 48.0%. However, the internal quantum efficiency of the 6 mol% Cr3+-doped sample was measured to be only 35.3% and the integral emission intensity at 373 K kept only 60.1% of the initial intensity. The possible reasons for the unsatisfactory internal quantum efficiency and thermal stability were systematically analyzed, which provided a comprehensive understanding of the relationship between the crystal structure and the luminescent properties of Cr3+-activated garnet-type phosphors. Nevertheless, the as-prepared NIR pc-LED device exhibits a NIR output of 16.52 mW with a NIR photoelectric conversion efficiency of 5.92% driven by 100 mA current, indicating the potential of this material for application in NIR pc-LED.
研究领域:
材料科学
·
光学
·
光子学
·
固体物理
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Xianzhe Zhang,Pengpeng Dai,Dawei Wen
Portable near-infrared (NIR) lighting source stimulates great efforts to exploit NIR phosphor-converted LEDs (pc-LEDs) that push the rapid development of broadband NIR-emitting phosphors. Although Cr 3+ -activated NIR phosphors designed by multisites occupation strategy show significant potential in emission bandwidth, poor spectral stability caused by different thermal quenching behaviors is a brake on practical application due to different local structure around Cr centers. One-site-based NIR phosphors seem to be an effective method to solve aforementioned problem. Herein, we report a type of new ultra-broadband one-site-based NIR-emitting phosphors NaSc 1-x P 2 O 7 :xCr 3+ (NSP:xCr 3+ ) with emission at 910 nm and full width at half maximum (FWHM) of up to ∼200 nm. Their FWHM value exceeds all one-site-based Cr 3+ -activated phosphors and some multiple-sites ones. Structural analysis and low-temperature spectra demonstrate that such impressive broadband NIR emission originates from Cr 3+ occupying at single octahedral Sc site. At 425 K, integrated emission intensity of NSP:0.04Cr 3+ phosphor maintains 53.8% of room temperature. A NIR pc-LED prototype is fabricated by using NSP:0.04Cr 3+ phosphor with a blue LED chip, and its multipurpose applications in non-destructive detection, night vision and analysis of foodstuff are demonstrated. These findings indicate that broadband NSP:0.04Cr 3+ NIR phosphor enabled by one-site occupation strategy has potential prospect for multipurpose NIR pc-LEDs applications.
研究领域:
材料科学
·
光电技术
·
光子学
·
固体物理
·
照明技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）